FR1251991A - Procédé de fabrication de corps semi-conducteurs frittés - Google Patents

Procédé de fabrication de corps semi-conducteurs frittés

Info

Publication number
FR1251991A
FR1251991A FR822669A FR822669A FR1251991A FR 1251991 A FR1251991 A FR 1251991A FR 822669 A FR822669 A FR 822669A FR 822669 A FR822669 A FR 822669A FR 1251991 A FR1251991 A FR 1251991A
Authority
FR
France
Prior art keywords
semiconductor bodies
manufacturing sintered
sintered semiconductor
manufacturing
bodies
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR822669A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Application granted granted Critical
Publication of FR1251991A publication Critical patent/FR1251991A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00—Making metallic powder or suspensions thereof
    • B22F9/02—Making metallic powder or suspensions thereof using physical processes
    • B22F9/04—Making metallic powder or suspensions thereof using physical processes starting from solid material, e.g. by crushing, grinding or milling
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Powder Metallurgy (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
FR822669A 1959-06-23 1960-03-28 Procédé de fabrication de corps semi-conducteurs frittés Expired FR1251991A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES63570A DE1118469B (de) 1959-06-23 1959-06-23 Verfahren zur Herstellung von gesinterten Halbleiterkoerpern

Publications (1)

Publication Number Publication Date
FR1251991A true FR1251991A (fr) 1961-01-20

Family

ID=7496473

Family Applications (1)

Application Number Title Priority Date Filing Date
FR822669A Expired FR1251991A (fr) 1959-06-23 1960-03-28 Procédé de fabrication de corps semi-conducteurs frittés

Country Status (5)

Country Link
US (1) US3059040A (fr)
CH (1) CH413110A (fr)
DE (1) DE1118469B (fr)
FR (1) FR1251991A (fr)
GB (1) GB928404A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2100660A1 (fr) * 2003-04-14 2009-09-16 Centre National de la Recherche Scientifique Procédé de fabrication de granules semiconducteurs

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3259815A (en) * 1962-06-28 1966-07-05 Texas Instruments Inc Gallium arsenide body containing copper
US3395445A (en) * 1966-05-09 1968-08-06 Energy Conversion Devices Inc Method of making solid state relay devices from tellurides
US8551441B1 (en) * 2011-05-11 2013-10-08 United States Of America As Represented By The Secretary Of The Air Force Control of crystallographic texture and grain size in bulk thermoelectric materials through constrained deformation
US9793461B2 (en) * 2014-09-05 2017-10-17 Mossey Creek Technologies, Inc. Nano-structured porous thermoelectric generators

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2543331A (en) * 1944-09-01 1951-02-27 Okolicsanyi Ferenc Thermopile
DE836943C (de) * 1950-06-14 1952-04-17 Siemens Ag Thermoelement, insbesondere zur elektrothermischen Kaelteerzeugung
US2952980A (en) * 1958-10-20 1960-09-20 Mira Corp Thermoelectric device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2100660A1 (fr) * 2003-04-14 2009-09-16 Centre National de la Recherche Scientifique Procédé de fabrication de granules semiconducteurs

Also Published As

Publication number Publication date
DE1118469B (de) 1961-11-30
US3059040A (en) 1962-10-16
GB928404A (en) 1963-06-12
CH413110A (de) 1966-05-15

Similar Documents

Publication Publication Date Title
BE586652A (fr) Procédé de fabrication de corps refractaires de grande densité.
CH403600A (fr) Procédé de fabrication de corps réfractaires poreux
FR1210771A (fr) Procédé de fabrication de corps en graphite
FR1233186A (fr) Procédé de fabrication de semi-conducteurs
FR1274727A (fr) Procédé de fabrication de corps semi-conducteurs diffusés
FR1251991A (fr) Procédé de fabrication de corps semi-conducteurs frittés
BE579440R (fr) Procédé de fabrication de vinyl éthers
BE592357A (fr) Procédé de fabrication de dialkylsulfoxydes
FR1207511A (fr) Procédé de fabrication de corps monocristallins
FR1512313A (fr) Procédé de fabrication de fluorostéroïdes
FR1249065A (fr) Procédé de fabrication de la choucroute
BE583990A (fr) Procédé de fabrication de borures
FR1247853A (fr) Procédé de fabrication de corps céramiques
FR1235502A (fr) Procédé de fabrication de corps poreux
FR79504E (fr) Procédé de fabrication de borazoles
FR1272490A (fr) Procédé de fabrication de levures
FR1258184A (fr) Procédé de fabrication de corps semi-conducteurs
FR1249305A (fr) Nouveau procédé de fabrication céramique
FR1252421A (fr) Procédé de fabrication de jonctions p-n
FR1268742A (fr) Procédé de fabrication de semiconducteurs
FR1249507A (fr) Procédé de fabrication de scintillateurs
FR1285081A (fr) Procédé de fabrication de paliers
FR1228083A (fr) Procédé de fabrication de polyurées
FR1278291A (fr) Procédé de fabrication de cyanoalkylsilanes
FR1246376A (fr) Procédé de fabrication de polyéthylène