FR1196142A - Concentric Semiconductor Diode - Google Patents

Concentric Semiconductor Diode

Info

Publication number: FR1196142A
Authority: FR; France
Prior art keywords: semiconductor diode; concentric semiconductor; concentric; diode; semiconductor
Prior art date: 1958-05-16
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

Other languages

Inventor

Stanislas Teszner

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1958-05-16

Filing date

1958-05-16

Publication date

1959-11-20

1958-05-16 Application filed filed Critical

1959-11-20 Application granted granted Critical

1959-11-20 Publication of FR1196142A publication Critical patent/FR1196142A/en

Status Expired legal-status Critical Current

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Ceramic Engineering (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Electrodes Of Semiconductors (AREA)

FR1196142D 1958-05-16 1958-05-16 Concentric Semiconductor Diode Expired FR1196142A (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
FR765712		1958-05-16

Publications (1)

Publication Number	Publication Date
FR1196142A true FR1196142A (en)	1959-11-20

Family

ID=8706523

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
FR1196142D Expired FR1196142A (en)	1958-05-16	1958-05-16	Concentric Semiconductor Diode

Country Status (3)

Country	Link
CH (1)	CH354861A (en)
FR (1)	FR1196142A (en)
GB (1)	GB914228A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE1154577B (en) *	1960-02-13	1963-09-19	Stanislas Teszner	Controlled unipolar semiconductor component with a hollow cylindrical semiconductor body of a conductivity type

1958
- 1958-05-16 FR FR1196142D patent/FR1196142A/en not_active Expired
1959
- 1959-05-11 CH CH354861D patent/CH354861A/en unknown
- 1959-05-13 GB GB1637059A patent/GB914228A/en not_active Expired

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE1154577B (en) *	1960-02-13	1963-09-19	Stanislas Teszner	Controlled unipolar semiconductor component with a hollow cylindrical semiconductor body of a conductivity type
DE1154577C2 (en) *	1960-02-13	1964-04-23	Stanislas Teszner	Controlled unipolar semiconductor component with a hollow cylindrical semiconductor body of a conductivity type

Also Published As

Publication number	Publication date
GB914228A (en)	1962-12-28
CH354861A (en)	1961-06-15

Publication	Publication Date	Title
FR1232232A (en)	1960-10-06	Semiconductor diode
FR1191310A (en)	1959-10-19	Semiconductor diode
FR1243284A (en)	1960-10-07	Semiconductor capacitors
FR1235793A (en)	1960-07-08	Semiconductor device
CH367570A (en)	1963-02-28	Transistor arrangement
FR1241404A (en)	1960-09-16	Single junction transistor circuit
FR1240436A (en)	1960-09-02	Transistor
CH384080A (en)	1964-11-15	Semiconductor device
CH357471A (en)	1961-10-15	Rectifier unit with air-cooled semiconductor rectifier elements
CH386566A (en)	1965-01-15	Semiconductor device
FR1269094A (en)	1961-08-11	Semiconductor diode
CH441508A (en)	1968-01-15	Semiconductor device
CH363096A (en)	1962-07-15	Semiconductor cold cathode
FR1229159A (en)	1960-09-05	Semiconductor rectifier
FR1221292A (en)	1960-06-01	Semiconductor devices
FR1225813A (en)	1960-07-04	Semiconductor devices
FR1229784A (en)	1960-09-09	Semiconductor device
FR1196142A (en)	1959-11-20	Concentric Semiconductor Diode
FR1230268A (en)	1960-09-14	Semiconductor diodes
CH373106A (en)	1963-11-15	Semiconductor circuit arrangement
FR1284371A (en)	1962-02-09	Semiconductor diode
BE582244R (en)	1960-03-02	Transistor-oscillator-transistor
FR1240414A (en)	1960-09-02	Diode
CH369215A (en)	1963-05-15	Semiconductor switching diode
FR1222108A (en)	1960-06-08	Semiconductor manufacturing