FR1172813A - Procédé de fabrication de cristaux pour transistors - Google Patents
Procédé de fabrication de cristaux pour transistorsInfo
- Publication number
- FR1172813A FR1172813A FR1172813DA FR1172813A FR 1172813 A FR1172813 A FR 1172813A FR 1172813D A FR1172813D A FR 1172813DA FR 1172813 A FR1172813 A FR 1172813A
- Authority
- FR
- France
- Prior art keywords
- crystals
- transistors
- manufacturing process
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US358866XA | 1956-03-02 | 1956-03-02 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1172813A true FR1172813A (fr) | 1959-02-16 |
Family
ID=21885372
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1172813D Expired FR1172813A (fr) | 1956-03-02 | 1957-03-02 | Procédé de fabrication de cristaux pour transistors |
Country Status (4)
Country | Link |
---|---|
BE (1) | BE555459A (fr) |
CH (1) | CH358866A (fr) |
FR (1) | FR1172813A (fr) |
GB (1) | GB846720A (fr) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3084078A (en) * | 1959-12-02 | 1963-04-02 | Texas Instruments Inc | High frequency germanium transistor |
US3181097A (en) * | 1960-09-19 | 1965-04-27 | Sprague Electric Co | Single crystal semiconductor resistors |
US3183129A (en) * | 1960-10-14 | 1965-05-11 | Fairchild Camera Instr Co | Method of forming a semiconductor |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3154450A (en) * | 1960-01-27 | 1964-10-27 | Bendix Corp | Method of making mesas for diodes by etching |
US3210225A (en) * | 1961-08-18 | 1965-10-05 | Texas Instruments Inc | Method of making transistor |
US3533862A (en) * | 1967-08-21 | 1970-10-13 | Texas Instruments Inc | Method of forming semiconductor regions in an epitaxial layer |
US6313398B1 (en) * | 1999-06-24 | 2001-11-06 | Shin-Etsu Chemical Co., Ltd. | Ga-doped multi-crytsalline silicon, Ga-doped multi-crystalline silicon wafer and method for producing the same |
-
0
- BE BE555459D patent/BE555459A/xx unknown
-
1957
- 1957-02-05 GB GB3975/57A patent/GB846720A/en not_active Expired
- 1957-03-02 FR FR1172813D patent/FR1172813A/fr not_active Expired
- 1957-03-02 CH CH358866D patent/CH358866A/de unknown
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3084078A (en) * | 1959-12-02 | 1963-04-02 | Texas Instruments Inc | High frequency germanium transistor |
US3181097A (en) * | 1960-09-19 | 1965-04-27 | Sprague Electric Co | Single crystal semiconductor resistors |
US3183129A (en) * | 1960-10-14 | 1965-05-11 | Fairchild Camera Instr Co | Method of forming a semiconductor |
Also Published As
Publication number | Publication date |
---|---|
CH358866A (de) | 1961-12-15 |
BE555459A (fr) | |
GB846720A (en) | 1960-08-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR1174076A (fr) | Procédé pour la fabrication de corps semi-conducteurs | |
FR1172813A (fr) | Procédé de fabrication de cristaux pour transistors | |
FR1183067A (fr) | Procédé de fabrication de peracides | |
FR1172011A (fr) | Procédé de fabrication de transistors | |
FR1210814A (fr) | Procédé pour la fabrication de disques | |
FR1166845A (fr) | Procédé de fabrication de monocristaux de combinaisons décomposables | |
FR1156155A (fr) | Procédé pour la fabrication de polyphosphates | |
FR1161625A (fr) | Procédé de fabrication de conditionnement pour supporsitoires | |
FR1207527A (fr) | Procédé pour la fabrication de cristaux semi-conducteurs de grande dimension | |
FR1182449A (fr) | Procédé pour la production de nu-nitroso-nu-alcoyl- et nu-nitroso-nu-cycloalcoyl-hydroxylamines | |
FR1190054A (fr) | Procédé pour la production de ferrites | |
FR1174287A (fr) | Procédé de fabrication des méthyldihalogénosilanes | |
FR1203754A (fr) | Procédé pour la fabrication d'isoprène | |
FR1215360A (fr) | Procédé de fabrication de cyclopentadiénylmanganèse-tricarbonyles | |
FR1152028A (fr) | Procédé de fabrication de chlorfluorcyclohexanes | |
FR1183516A (fr) | Procédé pour la fabrication de catalyseurs | |
FR1214960A (fr) | Procédé pour la fabrication de dérivés du cyclododécane | |
FR1183777A (fr) | Procédé de fabrication de récipients repliables | |
FR1261863A (fr) | Procédé de fabrication de céto-stéroïdes | |
FR1172666A (fr) | Procédé de fabrication de benzylates de 1-alkyl-3-hydroxypyrrolidine | |
FR1152026A (fr) | Procédé de fabrication de chlorfluorcyclohexènes | |
FR1188587A (fr) | Procédé pour la fabrication de nitroguanidine | |
FR1187035A (fr) | Procédé pour la production de cyclohexanone | |
FR1209364A (fr) | Procédé pour la fabrication de benzène | |
FR1326303A (fr) | Procédé pour la fabrication de phénoléthers du facteur iii |