FR1164844A - Structure semi-conductrice - Google Patents
Structure semi-conductriceInfo
- Publication number
- FR1164844A FR1164844A FR1164844DA FR1164844A FR 1164844 A FR1164844 A FR 1164844A FR 1164844D A FR1164844D A FR 1164844DA FR 1164844 A FR1164844 A FR 1164844A
- Authority
- FR
- France
- Prior art keywords
- semiconductor structure
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR729817 | 1957-01-18 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1164844A true FR1164844A (fr) | 1958-10-14 |
Family
ID=8704072
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1164844D Expired FR1164844A (fr) | 1957-01-18 | 1957-01-18 | Structure semi-conductrice |
Country Status (5)
Country | Link |
---|---|
US (1) | US2962605A (fr) |
DE (1) | DE1067129B (fr) |
FR (1) | FR1164844A (fr) |
GB (1) | GB883906A (fr) |
NL (2) | NL224173A (fr) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL155412C (fr) * | 1959-04-15 | |||
US3140438A (en) * | 1959-05-08 | 1964-07-07 | Clevite Corp | Voltage regulating semiconductor device |
US3263085A (en) * | 1960-02-01 | 1966-07-26 | Rca Corp | Radiation powered semiconductor devices |
US3219837A (en) * | 1960-02-29 | 1965-11-23 | Sanyo Electric Co | Negative resistance transistors |
US3157540A (en) * | 1960-05-31 | 1964-11-17 | Engelhard Ind Inc | High pressure process for improving the mechanical properties of metals |
US3124703A (en) * | 1960-06-13 | 1964-03-10 | Figure | |
US3040188A (en) * | 1960-10-28 | 1962-06-19 | Wolfgang W Gaertner | Three zone negative resistance junction diode having a short circuit across one of the junctions |
US3254278A (en) * | 1960-11-14 | 1966-05-31 | Hoffman Electronics Corp | Tunnel diode device |
US3134905A (en) * | 1961-02-03 | 1964-05-26 | Bell Telephone Labor Inc | Photosensitive semiconductor junction device |
US3260900A (en) * | 1961-04-27 | 1966-07-12 | Merck & Co Inc | Temperature compensating barrier layer semiconductor |
NL280641A (fr) * | 1961-07-07 | |||
NL280849A (fr) * | 1961-07-12 | 1900-01-01 | ||
BE634413A (fr) * | 1962-07-02 | |||
US3265899A (en) * | 1962-07-25 | 1966-08-09 | Gen Motors Corp | Semiconductor amplifying radiation detector |
GB1052661A (fr) * | 1963-01-30 | 1900-01-01 | ||
US3304470A (en) * | 1963-03-14 | 1967-02-14 | Nippon Electric Co | Negative resistance semiconductor device utilizing tunnel effect |
US3327136A (en) * | 1964-03-30 | 1967-06-20 | Abraham George | Variable gain tunneling |
US3284681A (en) * | 1964-07-01 | 1966-11-08 | Gen Electric | Pnpn semiconductor switching devices with stabilized firing characteristics |
US3413527A (en) * | 1964-10-02 | 1968-11-26 | Gen Electric | Conductive electrode for reducing the electric field in the region of the junction of a junction semiconductor device |
US3268782A (en) * | 1965-02-02 | 1966-08-23 | Int Rectifier Corp | High rate of rise of current-fourlayer device |
US3697829A (en) * | 1968-12-30 | 1972-10-10 | Gen Electric | Semiconductor devices with improved voltage breakdown characteristics |
US8408792B2 (en) | 2007-03-30 | 2013-04-02 | Kraft Foods Global Brands Llc | Package integrity indicating closure |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1048359B (fr) * | 1952-07-22 | |||
US2709780A (en) * | 1952-10-11 | 1955-05-31 | Bell Telephone Labor Inc | Constant voltage semiconductor devices |
US2764642A (en) * | 1952-10-31 | 1956-09-25 | Bell Telephone Labor Inc | Semiconductor signal translating devices |
US2795742A (en) * | 1952-12-12 | 1957-06-11 | Bell Telephone Labor Inc | Semiconductive translating devices utilizing selected natural grain boundaries |
US2779877A (en) * | 1955-06-17 | 1957-01-29 | Sprague Electric Co | Multiple junction transistor unit |
-
0
- NL NL113266D patent/NL113266C/xx active
- DE DENDAT1067129D patent/DE1067129B/de active Pending
- NL NL224173D patent/NL224173A/xx unknown
-
1957
- 1957-01-18 FR FR1164844D patent/FR1164844A/fr not_active Expired
-
1958
- 1958-01-13 GB GB1215/58A patent/GB883906A/en not_active Expired
- 1958-01-13 US US708669A patent/US2962605A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
NL224173A (fr) | |
NL113266C (fr) | |
US2962605A (en) | 1960-11-29 |
GB883906A (en) | 1961-12-06 |
DE1067129B (fr) |
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