FR1088286A - Dispositifs semi-conducteurs à jonction de surface - Google Patents

Dispositifs semi-conducteurs à jonction de surface

Info

Publication number
FR1088286A
FR1088286A FR1088286DA FR1088286A FR 1088286 A FR1088286 A FR 1088286A FR 1088286D A FR1088286D A FR 1088286DA FR 1088286 A FR1088286 A FR 1088286A
Authority
FR
France
Prior art keywords
semiconductor devices
junction semiconductor
surface junction
devices
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GTE Sylvania Inc
Original Assignee
Sylvania Electric Products Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sylvania Electric Products Inc filed Critical Sylvania Electric Products Inc
Application granted granted Critical
Publication of FR1088286A publication Critical patent/FR1088286A/fr
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/01—Control of temperature without auxiliary power
    • G05D23/13—Control of temperature without auxiliary power by varying the mixing ratio of two fluids having different temperatures
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
    • F16K47/00—Means in valves for absorbing fluid energy
    • F16K47/08—Means in valves for absorbing fluid energy for decreasing pressure or noise level and having a throttling member separate from the closure member, e.g. screens, slots, labyrinths
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24—HEATING; RANGES; VENTILATING
    • F24D—DOMESTIC- OR SPACE-HEATING SYSTEMS, e.g. CENTRAL HEATING SYSTEMS; DOMESTIC HOT-WATER SUPPLY SYSTEMS; ELEMENTS OR COMPONENTS THEREFOR
    • F24D19/00—Details
    • F24D19/0002—Means for connecting central heating radiators to circulation pipes
    • F24D19/0004—In a one pipe system
    • F24D19/0007—Comprising regulation means
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/01—Control of temperature without auxiliary power
    • G05D23/12—Control of temperature without auxiliary power with sensing element responsive to pressure or volume changes in a confined fluid
    • G05D23/125—Control of temperature without auxiliary power with sensing element responsive to pressure or volume changes in a confined fluid the sensing element being placed outside a regulating fluid flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Automation & Control Theory (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thermal Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Fluid Mechanics (AREA)
  • Junction Field-Effect Transistors (AREA)
FR1088286D 1952-08-14 1953-08-13 Dispositifs semi-conducteurs à jonction de surface Expired FR1088286A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US740419XA 1952-08-14 1952-08-14

Publications (1)

Publication Number Publication Date
FR1088286A true FR1088286A (fr) 1955-03-04

Family

ID=22117346

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1088286D Expired FR1088286A (fr) 1952-08-14 1953-08-13 Dispositifs semi-conducteurs à jonction de surface

Country Status (3)

Country Link
FR (1) FR1088286A (fr)
GB (1) GB740419A (fr)
NL (2) NL88391C (fr)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2850413A (en) * 1954-09-29 1958-09-02 Motorola Inc Process for making fused junction semiconductor devices
DE1045549B (de) * 1956-02-15 1958-12-04 Intermetall Verfahren zur Herstellung von Legierungskontakten mit p-n-UEbergaengen
US2871149A (en) * 1955-05-02 1959-01-27 Sprague Electric Co Semiconductor method
US2888782A (en) * 1955-03-18 1959-06-02 Itt Mold for fabricating of semiconductor signal translating devices
US2893901A (en) * 1957-01-28 1959-07-07 Sprague Electric Co Semiconductor junction
US2940878A (en) * 1957-03-05 1960-06-14 Bbc Brown Boveri & Cie Process for the production of semiconductor rectifiers
US2942568A (en) * 1954-10-15 1960-06-28 Sylvania Electric Prod Manufacture of junction transistors
DE1087705B (de) * 1957-08-08 1960-08-25 Philips Nv Legierungsform zum Auflegieren von Kontakten auf halbleitende Koerper
DE1110763B (de) * 1956-10-11 1961-07-13 Siemens Ag Verfahren und Vorrichtung zur Herstellung von Halbleiteranordnungen mit legierten, flaechenhaften p-n-UEbergaengen
DE1112585B (de) * 1958-01-14 1961-08-10 Philips Nv Verfahren zum Herstellen von Halbleiteranordnungen
DE1118360B (de) * 1955-08-04 1961-11-30 Gen Electric Co Ltd Verfahren und Vorrichtung zur Herstellung eines einlegierten Kontaktes an einem Siliziumkoerper
DE1144850B (de) * 1958-09-15 1963-03-07 Siemens Ag Verfahren zum Dotieren einer Zone eines Halbleiterkoerpers unter Verwendung einer Legierungsform
DE1150455B (de) * 1958-02-22 1963-06-20 Philips Patentverwaltung Legierform zur Herstellung von Legierungstransistoren mit grossflaechigen pn-UEbergaengen

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3175274A (en) * 1960-05-20 1965-03-30 Columbia Broadcasting Syst Inc Method for applying electrodes to semiconductor devices

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2850413A (en) * 1954-09-29 1958-09-02 Motorola Inc Process for making fused junction semiconductor devices
US2942568A (en) * 1954-10-15 1960-06-28 Sylvania Electric Prod Manufacture of junction transistors
US2888782A (en) * 1955-03-18 1959-06-02 Itt Mold for fabricating of semiconductor signal translating devices
US2871149A (en) * 1955-05-02 1959-01-27 Sprague Electric Co Semiconductor method
DE1118360B (de) * 1955-08-04 1961-11-30 Gen Electric Co Ltd Verfahren und Vorrichtung zur Herstellung eines einlegierten Kontaktes an einem Siliziumkoerper
DE1045549B (de) * 1956-02-15 1958-12-04 Intermetall Verfahren zur Herstellung von Legierungskontakten mit p-n-UEbergaengen
DE1110763B (de) * 1956-10-11 1961-07-13 Siemens Ag Verfahren und Vorrichtung zur Herstellung von Halbleiteranordnungen mit legierten, flaechenhaften p-n-UEbergaengen
US2893901A (en) * 1957-01-28 1959-07-07 Sprague Electric Co Semiconductor junction
US2940878A (en) * 1957-03-05 1960-06-14 Bbc Brown Boveri & Cie Process for the production of semiconductor rectifiers
DE1087705B (de) * 1957-08-08 1960-08-25 Philips Nv Legierungsform zum Auflegieren von Kontakten auf halbleitende Koerper
DE1112585B (de) * 1958-01-14 1961-08-10 Philips Nv Verfahren zum Herstellen von Halbleiteranordnungen
DE1150455B (de) * 1958-02-22 1963-06-20 Philips Patentverwaltung Legierform zur Herstellung von Legierungstransistoren mit grossflaechigen pn-UEbergaengen
DE1230911B (de) * 1958-02-22 1966-12-22 Philips Patentverwaltung Verfahren zum Aufschmelzen wenigstens eines Kontaktes auf einen Halbleiterkoerper und Vorrichtung zur Durchfuehrung dieses Verfahrens
DE1144850B (de) * 1958-09-15 1963-03-07 Siemens Ag Verfahren zum Dotieren einer Zone eines Halbleiterkoerpers unter Verwendung einer Legierungsform

Also Published As

Publication number Publication date
GB740419A (en) 1955-11-09
NL88391C (fr)
NL180482B (nl)

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