FI953779A0 - Method for layering thin film on a substrate using remote cold nitrogen plasma - Google Patents

Method for layering thin film on a substrate using remote cold nitrogen plasma

Info

Publication number
FI953779A0
FI953779A0 FI953779A FI953779A FI953779A0 FI 953779 A0 FI953779 A0 FI 953779A0 FI 953779 A FI953779 A FI 953779A FI 953779 A FI953779 A FI 953779A FI 953779 A0 FI953779 A0 FI 953779A0
Authority
FI
Finland
Prior art keywords
substrate
nitrogen plasma
thin film
remote
cold nitrogen
Prior art date
Application number
FI953779A
Other languages
Finnish (fi)
Swedish (sv)
Other versions
FI953779A (en
Inventor
Franck Callebert
Philippe Supiot
Odile Dessaux
Pierre Goudmand
Original Assignee
Europ Composants Electron
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Europ Composants Electron filed Critical Europ Composants Electron
Publication of FI953779A0 publication Critical patent/FI953779A0/en
Publication of FI953779A publication Critical patent/FI953779A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets

Abstract

A method for applying a thin film to a metal, organic or inorganic substrate (12), wherein a remote cold nitrogen plasma essentially consisting of free nitrogen atoms is produced in an enclosure (5) housing said substrate (12). To form passivation layers, a gaseous organosilica or germanium compound containing CH, Si (or Ge), O or NH groups is fed into said enclosure (5) during the formation of the remote nitrogen plasma. To form dielectric thin films, organometallic compounds may also be added.
FI953779A 1993-02-10 1995-08-09 Method for layering thin film on a substrate using remote cold nitrogen plasma FI953779A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9301484A FR2701492B1 (en) 1993-02-10 1993-02-10 Method for depositing a thin layer on a substrate by cold nitrogen plasma.
PCT/FR1994/000149 WO1994018355A1 (en) 1993-02-10 1994-02-09 Method for thin film deposition on a substrate using remote cold nitrogen plasma

Publications (2)

Publication Number Publication Date
FI953779A0 true FI953779A0 (en) 1995-08-09
FI953779A FI953779A (en) 1995-09-22

Family

ID=9443921

Family Applications (1)

Application Number Title Priority Date Filing Date
FI953779A FI953779A (en) 1993-02-10 1995-08-09 Method for layering thin film on a substrate using remote cold nitrogen plasma

Country Status (9)

Country Link
EP (1) EP0683825B1 (en)
JP (1) JPH08506381A (en)
KR (1) KR960701237A (en)
AT (1) ATE156866T1 (en)
CA (1) CA2155659A1 (en)
DE (1) DE69404971T2 (en)
FI (1) FI953779A (en)
FR (1) FR2701492B1 (en)
WO (1) WO1994018355A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2718155B1 (en) * 1994-04-05 1996-04-26 Europ Composants Electron Method for depositing a dielectric and / or metal on a substrate.
EP0850266B1 (en) 1995-09-15 2002-06-05 Tarkett Sommer S.A. Method for obtaining a floor covering and product thus obtained
US7129187B2 (en) 2004-07-14 2006-10-31 Tokyo Electron Limited Low-temperature plasma-enhanced chemical vapor deposition of silicon-nitrogen-containing films
CN114829670A (en) * 2019-12-19 2022-07-29 旭硝子欧洲玻璃公司 Silicon oxide coated polymer film and low pressure PECVD method for producing the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4363828A (en) * 1979-12-12 1982-12-14 International Business Machines Corp. Method for depositing silicon films and related materials by a glow discharge in a disiland or higher order silane gas
US4863755A (en) * 1987-10-16 1989-09-05 The Regents Of The University Of California Plasma enhanced chemical vapor deposition of thin films of silicon nitride from cyclic organosilicon nitrogen precursors
FR2651782B1 (en) * 1989-09-14 1993-03-19 Air Liquide PROCESS FOR MAKING A DEPOSIT OF AN INORGANIC AND AMORPHOUS COATING ON AN ORGANIC POLYMERIC SUBSTRATE.
US4980196A (en) * 1990-02-14 1990-12-25 E. I. Du Pont De Nemours And Company Method of coating steel substrate using low temperature plasma processes and priming
FR2661688B1 (en) * 1990-05-02 1992-07-17 Air Liquide MULTILAYER COATING FOR POLYCARBONATE SUBSTRATE AND PROCESS FOR PREPARING SUCH A COATING.
JPH0782999B2 (en) * 1991-04-15 1995-09-06 株式会社半導体プロセス研究所 Vapor growth film forming method, semiconductor manufacturing apparatus, and semiconductor device
DE4126759A1 (en) * 1991-08-13 1993-02-18 Siemens Ag Thin, silicon-contg. organic layers prodn. - by irradiation of organo-silane(s)-alkoxy:silane(s) or -siloxane(s) with pulsed laser light of specified wavelength, pulse length, frequency and energy

Also Published As

Publication number Publication date
DE69404971D1 (en) 1997-09-18
EP0683825B1 (en) 1997-08-13
FI953779A (en) 1995-09-22
JPH08506381A (en) 1996-07-09
FR2701492A1 (en) 1994-08-19
CA2155659A1 (en) 1994-08-18
KR960701237A (en) 1996-02-24
EP0683825A1 (en) 1995-11-29
DE69404971T2 (en) 1997-12-18
ATE156866T1 (en) 1997-08-15
WO1994018355A1 (en) 1994-08-18
FR2701492B1 (en) 1996-05-10

Similar Documents

Publication Publication Date Title
AU1899588A (en) Method of plasma enhanced silicon oxide deposition
IL133820A0 (en) Method and apparatus for fabrication of thin films by chemical vapor deposition
AU4531693A (en) Methods of chemical vapor deposition (cvd) of films on patterned wafer substrates
DE3172827D1 (en) Method of plasma enhanced chemical vapour deposition of films
FR2631346B1 (en) MULTILAYER PROTECTIVE COATING FOR SUBSTRATE, METHOD FOR PROTECTING SUBSTRATE BY PLASMA DEPOSITION OF SUCH A COATING, COATINGS OBTAINED AND APPLICATIONS THEREOF
EP0174743A3 (en) Process for transition metal nitrides thin film deposition
DE69429150D1 (en) Process for applying a thin layer on the surface of a plastic substrate
KR950007021A (en) Semiconductor device with planarized insulating film
MX9101829A (en) METHOD FOR TREATING DIAMONDS TO PRODUCE LIGABLE DIAMONDS TO DEPOSIT THE SAME SUBSTRACT.
ATE173302T1 (en) METHOD AND DEVICE FOR PRODUCING THIN LAYERS OF METAL COMPOUNDS
FI953779A (en) Method for layering thin film on a substrate using remote cold nitrogen plasma
TW365689B (en) Semiconductor device having an insulation film of low permittivity and a fabrication process thereof
NO932182D0 (en) BARRIER MOVIES AND PROCEDURES FOR PREPARING THEREOF
AU8312091A (en) Chemical vapor deposition (cvd) process for plasma depositing silicon carbide films onto a substrate
GB9524026D0 (en) Methods and manufacturing substrates to form monocrystalline diamond films by chemical vapor deposition
SG43276A1 (en) Process for forming deposited film and process for producing semiconductor device
ES2009897A6 (en) Method of forming semiconducting amorphous silicon films from the thermal decompositon of fluorohydridodisilanes.
GB1440357A (en) Method for making amorphous semiconductor films
MY110288A (en) Process for forming deposited film and process for preparing semiconductor device.
MY110504A (en) A method and apparatus for treating a surface.
EP0152669A3 (en) Continuous pnictide source and delivery system for film deposition, particularly by chemical vapour deposition
Qian et al. Synthesis and Analysis of Sm--Fe--Ti Thin Film Magnets
KR950001946A (en) Lead titanate thin film formation method
TW271001B (en) A method to sputter silicides for the production of highly integrated circuit
DE3268439D1 (en) Thin films of compounds and alloy compounds of group iii and group v elements

Legal Events

Date Code Title Description
FD Application lapsed