FI953240A0 - Ljusdetektor - Google Patents
LjusdetektorInfo
- Publication number
- FI953240A0 FI953240A0 FI953240A FI953240A FI953240A0 FI 953240 A0 FI953240 A0 FI 953240A0 FI 953240 A FI953240 A FI 953240A FI 953240 A FI953240 A FI 953240A FI 953240 A0 FI953240 A0 FI 953240A0
- Authority
- FI
- Finland
- Prior art keywords
- pct
- photoelectrons
- date
- sec
- floating gate
- Prior art date
Links
- 238000005259 measurement Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
- H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Light Receiving Elements (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Optical Radar Systems And Details Thereof (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Glass Compositions (AREA)
Priority Applications (11)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI953240A FI953240A0 (fi) | 1995-06-30 | 1995-06-30 | Ljusdetektor |
CN96195181A CN1112735C (zh) | 1995-06-30 | 1996-06-28 | 包含浮栅mosfet的光探测器 |
PCT/FI1996/000380 WO1997002609A1 (en) | 1995-06-30 | 1996-06-28 | Photodetector involving a mosfet having a floating gate |
JP50485197A JP3790548B2 (ja) | 1995-06-30 | 1996-06-28 | フローティング・ゲートが有るmosfetを含む受光素子 |
AU62271/96A AU6227196A (en) | 1995-06-30 | 1996-06-28 | Photodetector involving a mosfet having a floating gate |
US08/981,724 US6043508A (en) | 1995-06-30 | 1996-06-28 | Photodetector involving a MOSFET having a floating gate |
EP96920861A EP0842545B1 (en) | 1995-06-30 | 1996-06-28 | Photodetector involving a mosfet having a floating gate |
CA002225226A CA2225226C (en) | 1995-06-30 | 1996-06-28 | Photodetector involving a mosfet having a floating gate |
AT96920861T ATE274241T1 (de) | 1995-06-30 | 1996-06-28 | Fotodetektor mit einem mosfet bestehend aus einem schwebenden gate |
RU98101464/28A RU2161348C2 (ru) | 1995-06-30 | 1996-06-28 | Фотодетектор, содержащий моппт с плавающим затвором |
DE69633183T DE69633183T2 (de) | 1995-06-30 | 1996-06-28 | Fotodetektor mit einem mosfet bestehend aus einem schwebenden gate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI953240A FI953240A0 (fi) | 1995-06-30 | 1995-06-30 | Ljusdetektor |
Publications (1)
Publication Number | Publication Date |
---|---|
FI953240A0 true FI953240A0 (fi) | 1995-06-30 |
Family
ID=8543704
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FI953240A FI953240A0 (fi) | 1995-06-30 | 1995-06-30 | Ljusdetektor |
Country Status (11)
Country | Link |
---|---|
US (1) | US6043508A (fi) |
EP (1) | EP0842545B1 (fi) |
JP (1) | JP3790548B2 (fi) |
CN (1) | CN1112735C (fi) |
AT (1) | ATE274241T1 (fi) |
AU (1) | AU6227196A (fi) |
CA (1) | CA2225226C (fi) |
DE (1) | DE69633183T2 (fi) |
FI (1) | FI953240A0 (fi) |
RU (1) | RU2161348C2 (fi) |
WO (1) | WO1997002609A1 (fi) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000088645A (ja) | 1998-09-16 | 2000-03-31 | Hamamatsu Photonics Kk | 積分型光検出装置 |
CN100554897C (zh) * | 2002-04-17 | 2009-10-28 | 浜松光子学株式会社 | 光检测传感器 |
KR100499956B1 (ko) * | 2002-10-24 | 2005-07-05 | 전자부품연구원 | 양자채널이 형성된 모스펫을 이용한 포토디텍터 및 그제조방법 |
FR2911191B1 (fr) * | 2007-01-09 | 2009-07-10 | Microcomposants De Haute Secur | Capteur de mesure d'une dose d'uv et procede de mesure d'une dose d'uv mettant en oeuvre ce capteur |
CN101303239B (zh) * | 2007-05-10 | 2010-05-26 | 北方工业大学 | 一种传感器及其调节方法 |
RU2451983C1 (ru) * | 2008-09-02 | 2012-05-27 | Шарп Кабусики Кайся | Дисплейное устройство |
CN101807547B (zh) * | 2009-02-18 | 2013-07-10 | 南京大学 | 光敏复合介质栅mosfet探测器 |
US9219177B2 (en) | 2010-04-07 | 2015-12-22 | International Business Machines Corporation | Photo detector and integrated circuit |
US9762233B2 (en) * | 2011-08-16 | 2017-09-12 | Erez Halahmi | System for a contactless control of a field effect transistor |
US8653618B2 (en) * | 2011-09-02 | 2014-02-18 | Hoon Kim | Unit pixel of color image sensor and photo detector thereof |
US9213112B2 (en) | 2013-03-15 | 2015-12-15 | Starfire Industries, Llc | Neutron radiation sensor |
CN104900745B (zh) * | 2015-05-26 | 2017-10-27 | 北京工业大学 | 一种基于高电子迁移率晶体管的光谱探测器及其制备方法 |
CN110767519B (zh) * | 2019-10-21 | 2022-03-04 | 中国电子科技集团公司第十二研究所 | 一种场发射电子源结构及其形成方法、电子源、微波管 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0002420A1 (fr) * | 1977-12-01 | 1979-06-13 | International Business Machines Corporation | Dispositif semi-conducteur du type transistor à effet de champ activé par la lumière et mémoire en résultant |
DE3413829A1 (de) * | 1984-04-10 | 1985-10-17 | Hahn-Meitner-Institut für Kernforschung Berlin GmbH, 1000 Berlin | Mos-dosimeter |
US5471051A (en) * | 1993-06-02 | 1995-11-28 | Hamamatsu Photonics K.K. | Photocathode capable of detecting position of incident light in one or two dimensions, phototube, and photodetecting apparatus containing same |
FI934784A0 (fi) * | 1993-10-28 | 1993-10-28 | Rados Technology Oy | Straolningsdetektor |
US5804833A (en) * | 1996-10-10 | 1998-09-08 | Advanced Scientific Concepts, Inc. | Advanced semiconductor emitter technology photocathodes |
-
1995
- 1995-06-30 FI FI953240A patent/FI953240A0/fi not_active Application Discontinuation
-
1996
- 1996-06-28 RU RU98101464/28A patent/RU2161348C2/ru not_active IP Right Cessation
- 1996-06-28 WO PCT/FI1996/000380 patent/WO1997002609A1/en active IP Right Grant
- 1996-06-28 JP JP50485197A patent/JP3790548B2/ja not_active Expired - Fee Related
- 1996-06-28 AT AT96920861T patent/ATE274241T1/de not_active IP Right Cessation
- 1996-06-28 CN CN96195181A patent/CN1112735C/zh not_active Expired - Fee Related
- 1996-06-28 EP EP96920861A patent/EP0842545B1/en not_active Expired - Lifetime
- 1996-06-28 CA CA002225226A patent/CA2225226C/en not_active Expired - Fee Related
- 1996-06-28 US US08/981,724 patent/US6043508A/en not_active Expired - Lifetime
- 1996-06-28 AU AU62271/96A patent/AU6227196A/en not_active Abandoned
- 1996-06-28 DE DE69633183T patent/DE69633183T2/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CN1189922A (zh) | 1998-08-05 |
CA2225226C (en) | 2003-01-21 |
JPH11509366A (ja) | 1999-08-17 |
US6043508A (en) | 2000-03-28 |
DE69633183D1 (de) | 2004-09-23 |
ATE274241T1 (de) | 2004-09-15 |
JP3790548B2 (ja) | 2006-06-28 |
CN1112735C (zh) | 2003-06-25 |
EP0842545A1 (en) | 1998-05-20 |
AU6227196A (en) | 1997-02-05 |
WO1997002609A1 (en) | 1997-01-23 |
EP0842545B1 (en) | 2004-08-18 |
CA2225226A1 (en) | 1997-01-23 |
DE69633183T2 (de) | 2005-08-18 |
RU2161348C2 (ru) | 2000-12-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FD | Application lapsed |