FI920948A0 - TUNNFILM-ELEKTROLUMINESCENSELEMENT. - Google Patents

TUNNFILM-ELEKTROLUMINESCENSELEMENT.

Info

Publication number
FI920948A0
FI920948A0 FI920948A FI920948A FI920948A0 FI 920948 A0 FI920948 A0 FI 920948A0 FI 920948 A FI920948 A FI 920948A FI 920948 A FI920948 A FI 920948A FI 920948 A0 FI920948 A0 FI 920948A0
Authority
FI
Finland
Prior art keywords
tunnfilm
elektroluminescenselement
Prior art date
Application number
FI920948A
Other languages
Finnish (fi)
Inventor
Takashi Nire
Original Assignee
Komatsu Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Mfg Co Ltd filed Critical Komatsu Mfg Co Ltd
Publication of FI920948A0 publication Critical patent/FI920948A0/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7743—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing terbium
    • C09K11/7744—Chalcogenides
    • C09K11/7745—Chalcogenides with zinc or cadmium
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
FI920948A 1989-09-04 1992-03-03 TUNNFILM-ELEKTROLUMINESCENSELEMENT. FI920948A0 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP1989/000909 WO1991003918A1 (en) 1989-09-04 1989-09-04 Thin-film el element

Publications (1)

Publication Number Publication Date
FI920948A0 true FI920948A0 (en) 1992-03-03

Family

ID=13958844

Family Applications (1)

Application Number Title Priority Date Filing Date
FI920948A FI920948A0 (en) 1989-09-04 1992-03-03 TUNNFILM-ELEKTROLUMINESCENSELEMENT.

Country Status (5)

Country Link
US (1) US5311035A (en)
EP (1) EP0493592A4 (en)
KR (1) KR970002016B1 (en)
FI (1) FI920948A0 (en)
WO (1) WO1991003918A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5641582A (en) * 1992-04-16 1997-06-24 Komatsu Ltd. Thin-film EL element
US5700592A (en) * 1995-12-13 1997-12-23 Hewlett-Pacard Company Electroluminescent materials for edge emitters
JP3792390B2 (en) * 1998-02-24 2006-07-05 富士通株式会社 Semiconductor device and manufacturing method thereof
KR100377716B1 (en) * 1998-02-25 2003-03-26 인터내셔널 비지네스 머신즈 코포레이션 Electric pumping of rare-earth-doped silicon for optical emission
US6531414B1 (en) * 1999-05-05 2003-03-11 The United States Of America As Represented By The National Security Agency Method of oxidizing strain-compensated superlattice of group III-V semiconductor
JP5604147B2 (en) * 2010-03-25 2014-10-08 パナソニック株式会社 Transistor and manufacturing method thereof

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59181485A (en) * 1983-03-31 1984-10-15 柊元　宏 Light emitting element
EP0133342B1 (en) * 1983-06-24 1989-11-29 Nec Corporation A superlattice type semiconductor structure having a high carrier density
US4751427A (en) * 1984-03-12 1988-06-14 Planar Systems, Inc. Thin-film electroluminescent device
JPH077849B2 (en) * 1984-12-17 1995-01-30 株式会社東芝 Semiconductor light emitting element
JPS61158691A (en) * 1984-12-28 1986-07-18 日本電気株式会社 Thin film el element
JPS61268079A (en) * 1985-05-20 1986-11-27 Stanley Electric Co Ltd Blue light-emitting element
JPS62224985A (en) * 1986-03-27 1987-10-02 Seiko Epson Corp Semiconductor light emitting device
JPH0793196B2 (en) * 1987-03-25 1995-10-09 株式会社日立製作所 EL device and manufacturing method thereof
JP2547340B2 (en) * 1988-03-22 1996-10-23 株式会社小松製作所 Thin film EL device
JPH0240891A (en) * 1988-07-29 1990-02-09 Toshiba Corp Thin film electroluminescent display element
JPH02244031A (en) * 1988-12-27 1990-09-28 Toshiba Corp Thin-film type electroluminescence display element

Also Published As

Publication number Publication date
EP0493592A4 (en) 1993-09-01
US5311035A (en) 1994-05-10
WO1991003918A1 (en) 1991-03-21
KR920704545A (en) 1992-12-19
KR970002016B1 (en) 1997-02-20
EP0493592A1 (en) 1992-07-08

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Legal Events

Date Code Title Description
FD Application lapsed