FI820197L - Skyddskrets foer intergrerade kretsanordningar - Google Patents

Skyddskrets foer intergrerade kretsanordningar

Info

Publication number
FI820197L
FI820197L FI820197A FI820197A FI820197L FI 820197 L FI820197 L FI 820197L FI 820197 A FI820197 A FI 820197A FI 820197 A FI820197 A FI 820197A FI 820197 L FI820197 L FI 820197L
Authority
FI
Finland
Prior art keywords
skyddskrets
kretsanordningar
intergrerade
foer
skyddskrets foer
Prior art date
Application number
FI820197A
Other languages
English (en)
Other versions
FI74166C (fi
FI74166B (fi
Inventor
Leslie Ronald Avery
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of FI820197L publication Critical patent/FI820197L/fi
Application granted granted Critical
Publication of FI74166B publication Critical patent/FI74166B/fi
Publication of FI74166C publication Critical patent/FI74166C/fi

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08146Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in bipolar transistor switches

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
FI820197A 1981-01-30 1982-01-22 Skyddskrets foer integrerade kretsanordningar. FI74166C (fi)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US23035781A 1981-01-30 1981-01-30
US23035781 1981-01-30
US32621981A 1981-12-01 1981-12-01
US32621981 1981-12-01

Publications (3)

Publication Number Publication Date
FI820197L true FI820197L (fi) 1982-07-31
FI74166B FI74166B (fi) 1987-08-31
FI74166C FI74166C (fi) 1987-12-10

Family

ID=26924154

Family Applications (1)

Application Number Title Priority Date Filing Date
FI820197A FI74166C (fi) 1981-01-30 1982-01-22 Skyddskrets foer integrerade kretsanordningar.

Country Status (8)

Country Link
KR (1) KR860000714B1 (fi)
CA (1) CA1179406A (fi)
DE (1) DE3201933A1 (fi)
ES (2) ES8307416A1 (fi)
FI (1) FI74166C (fi)
FR (1) FR2499325B1 (fi)
GB (2) GB2092377B (fi)
IT (1) IT1151504B (fi)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5948951A (ja) * 1982-09-14 1984-03-21 Toshiba Corp 半導体保護装置
US4484244A (en) * 1982-09-22 1984-11-20 Rca Corporation Protection circuit for integrated circuit devices
US4562454A (en) * 1983-12-29 1985-12-31 Motorola, Inc. Electronic fuse for semiconductor devices
KR900008746B1 (ko) * 1986-11-19 1990-11-29 삼성전자 주식회사 접합 파괴장치 반도체장치
DE3835569A1 (de) * 1988-10-19 1990-05-03 Telefunken Electronic Gmbh Schutzanordnung
DE4004526C1 (fi) * 1990-02-14 1991-09-05 Texas Instruments Deutschland Gmbh, 8050 Freising, De
US5224169A (en) * 1991-05-13 1993-06-29 Thomson Consumer Electronics, Inc. Protection arrangement for an audio output channel
US5235489A (en) * 1991-06-28 1993-08-10 Sgs-Thomson Microelectronics, Inc. Integrated solution to high voltage load dump conditions
USD793867S1 (en) 2015-08-28 2017-08-08 The Procter & Gamble Company Container
USD794465S1 (en) 2015-08-28 2017-08-15 The Procter & Gamble Company Container
USD793250S1 (en) 2015-09-07 2017-08-01 The Procter & Gamble Company Container

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3524113A (en) * 1967-06-15 1970-08-11 Ibm Complementary pnp-npn transistors and fabrication method therefor
DE1901075A1 (de) * 1969-01-10 1970-08-13 Bosch Gmbh Robert Zweipoliges elektrisches Schaltelement
JPS55113358A (en) * 1979-02-23 1980-09-01 Hitachi Ltd Semiconductor device
GB2056808A (en) * 1979-08-17 1981-03-18 Lumenition Ltd Power transistor protection

Also Published As

Publication number Publication date
DE3201933A1 (de) 1982-08-12
GB8413887D0 (en) 1984-07-04
IT8219185A0 (it) 1982-01-19
GB2141301B (en) 1985-07-24
GB2092377B (en) 1985-07-31
GB2141301A (en) 1984-12-12
CA1179406A (en) 1984-12-11
KR830009654A (ko) 1983-12-22
FR2499325A1 (fr) 1982-08-06
ES520411A0 (es) 1984-03-01
GB2092377A (en) 1982-08-11
ES508976A0 (es) 1983-06-16
ES8403245A1 (es) 1984-03-01
FR2499325B1 (fr) 1985-07-26
KR860000714B1 (ko) 1986-06-07
ES8307416A1 (es) 1983-06-16
DE3201933C2 (fi) 1987-01-08
FI74166C (fi) 1987-12-10
IT1151504B (it) 1986-12-24
FI74166B (fi) 1987-08-31

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Legal Events

Date Code Title Description
MM Patent lapsed

Owner name: RCA CORPORATION