FI20126253L - Method for manufacturing a passivation film on a crystalline silicon surface - Google Patents
Method for manufacturing a passivation film on a crystalline silicon surface Download PDFInfo
- Publication number
- FI20126253L FI20126253L FI20126253A FI20126253A FI20126253L FI 20126253 L FI20126253 L FI 20126253L FI 20126253 A FI20126253 A FI 20126253A FI 20126253 A FI20126253 A FI 20126253A FI 20126253 L FI20126253 L FI 20126253L
- Authority
- FI
- Finland
- Prior art keywords
- silicon surface
- precursor
- crystalline silicon
- passivation film
- passivation layer
- Prior art date
Links
- 238000002161 passivation Methods 0.000 title abstract 7
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000002243 precursor Substances 0.000 abstract 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 3
- 238000006243 chemical reaction Methods 0.000 abstract 3
- 229910052760 oxygen Inorganic materials 0.000 abstract 3
- 239000001301 oxygen Substances 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 239000004411 aluminium Substances 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 238000006557 surface reaction Methods 0.000 abstract 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
A method for fabricating a passivation film (1) on a crystalline silicon surface (2), the passivation film (1) comprising aluminium oxide AIOx, comprises providing an existing crystalline silicon surface (2) in a reaction space; depositing in the reaction space a first passivation layer (3) on the existing silicon surface, wherein the existing silicon surface with the deposit already formed thereon is alternately exposed to surface reactions of at least one first precursor for aluminium and at least one first precursor for oxygen; and depositing in the reaction space a second passivation layer (4) on the first passivation layer, wherein the first passivation layer with the deposit already formed thereon is alternately exposed to surface reactions of at least one second precursor for aluminium and at least one second precursor for oxygen. According to the invention, the at least one first precursor for oxygen comprises ozone O3.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI20126253A FI20126253L (en) | 2012-11-29 | 2012-11-29 | Method for manufacturing a passivation film on a crystalline silicon surface |
| PCT/FI2013/051091 WO2014083241A1 (en) | 2012-11-29 | 2013-11-21 | Method for fabricating a passivation film on a crystalline silicon surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI20126253A FI20126253L (en) | 2012-11-29 | 2012-11-29 | Method for manufacturing a passivation film on a crystalline silicon surface |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FI20126253L true FI20126253L (en) | 2014-05-30 |
Family
ID=50827228
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FI20126253A FI20126253L (en) | 2012-11-29 | 2012-11-29 | Method for manufacturing a passivation film on a crystalline silicon surface |
Country Status (2)
| Country | Link |
|---|---|
| FI (1) | FI20126253L (en) |
| WO (1) | WO2014083241A1 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3339358B1 (en) * | 2015-08-20 | 2020-12-02 | Kaneka Corporation | Polypropylene resin foamed particles, method for producing polypropylene resin foamed particles and polypropylene resin in-mold foam-molded article |
| CN113097341B (en) * | 2021-03-31 | 2023-10-31 | 通威太阳能（安徽）有限公司 | PERC battery, alOx coating process thereof, multi-layer AlOx back passivation structure and method |
| CN114420790A (en) * | 2022-01-19 | 2022-04-29 | 普乐新能源科技(徐州)有限公司 | Method for preparing laminated aluminum oxide film layer based on ALD (atomic layer deposition) process |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2774405C (en) * | 2009-09-18 | 2017-10-10 | Shin-Etsu Chemical Co., Ltd. | Solar cell, method for manufacturing solar cell, and solar cell module |
| WO2012133692A1 (en) * | 2011-03-31 | 2012-10-04 | 京セラ株式会社 | Solar cell element and solar cell module |
| US20120255612A1 (en) * | 2011-04-08 | 2012-10-11 | Dieter Pierreux | Ald of metal oxide film using precursor pairs with different oxidants |
-
2012
- 2012-11-29 FI FI20126253A patent/FI20126253L/en not_active Application Discontinuation
-
2013
- 2013-11-21 WO PCT/FI2013/051091 patent/WO2014083241A1/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| WO2014083241A1 (en) | 2014-06-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FD | Application lapsed |