FI20116113A - Lateral connected bulk wave filter with improved pass band characteristics - Google Patents
Lateral connected bulk wave filter with improved pass band characteristics Download PDFInfo
- Publication number
- FI20116113A FI20116113A FI20116113A FI20116113A FI20116113A FI 20116113 A FI20116113 A FI 20116113A FI 20116113 A FI20116113 A FI 20116113A FI 20116113 A FI20116113 A FI 20116113A FI 20116113 A FI20116113 A FI 20116113A
- Authority
- FI
- Finland
- Prior art keywords
- vibration layer
- frequency band
- filter
- wave filter
- coupled
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/0211—Means for compensation or elimination of undesirable effects of reflections
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02228—Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/175—Acoustic mirrors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/564—Monolithic crystal filters implemented with thin-film techniques
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention relates to a laterally coupled bulk acoustic wave (LBAW) filter (70) comprising a vibration layer (73) for carrying bulk acoustic waves, electrode means (71, 72, 74) comprising a first electrode (71) coupled to the vibration layer (73) for exciting to the vibration layer (73) at least one longitudinal wave mode having a first frequency band and one shear wave mode having a second frequency band, and a second electrode (72) coupled to the vibration layer (73) for sensing the filter pass signal, the first and second electrodes (71, 72) being laterally arranged with respect to each other, and an acoustic reflector structure (75) in acoustic connection with the vibration layer(73). According to the invention, the reflector structure (75) is adapted to acoustically isolate the vibration layer (73) from its surroundings at the first frequency band more efficiently than at the second frequency band for suppressing the effect of the shear wave mode at the second frequency band from the filter pass signal. The invention helps to improve the quality of LBAW filter passbands.
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20116113A FI124732B (en) | 2011-11-11 | 2011-11-11 | Lateral connected bulk wave filter with improved passband characteristics |
CN201280066944.8A CN104205632B (en) | 2011-11-11 | 2012-11-09 | There is the lateral formula bulk accoustic wave filter of improved pass-band performance |
JP2014540529A JP2015502065A (en) | 2011-11-11 | 2012-11-09 | Transversely coupled bulk acoustic wave filter with improved passband characteristics |
EP12847501.9A EP2777153B1 (en) | 2011-11-11 | 2012-11-09 | Laterally coupled bulk acoustic wave filter with improved passband characteristics |
US14/357,220 US9219466B2 (en) | 2011-11-11 | 2012-11-09 | Laterally coupled bulk acoustic wave filter with improved passband characteristics |
PCT/FI2012/051096 WO2013068652A1 (en) | 2011-11-11 | 2012-11-09 | Laterally coupled bulk acoustic wave filter with improved passband characteristics |
KR1020147015834A KR101977334B1 (en) | 2011-11-11 | 2012-11-09 | Laterally coupled bulk acoustic wave filter with improved passband characteristics |
JP2018052320A JP6564096B2 (en) | 2011-11-11 | 2018-03-20 | Transversely coupled bulk acoustic wave filter with improved passband characteristics |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20116113A FI124732B (en) | 2011-11-11 | 2011-11-11 | Lateral connected bulk wave filter with improved passband characteristics |
FI20116113 | 2011-11-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
FI20116113A true FI20116113A (en) | 2013-05-12 |
FI124732B FI124732B (en) | 2014-12-31 |
Family
ID=48288592
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FI20116113A FI124732B (en) | 2011-11-11 | 2011-11-11 | Lateral connected bulk wave filter with improved passband characteristics |
Country Status (7)
Country | Link |
---|---|
US (1) | US9219466B2 (en) |
EP (1) | EP2777153B1 (en) |
JP (2) | JP2015502065A (en) |
KR (1) | KR101977334B1 (en) |
CN (1) | CN104205632B (en) |
FI (1) | FI124732B (en) |
WO (1) | WO2013068652A1 (en) |
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CN101997513B (en) * | 2009-08-20 | 2014-04-02 | 上海华为技术有限公司 | Multi-coupling filter |
FI123640B (en) | 2010-04-23 | 2013-08-30 | Teknologian Tutkimuskeskus Vtt | Broadband acoustically connected thin film BAW filter |
FI20106063A (en) * | 2010-10-14 | 2012-06-08 | Valtion Teknillinen | Acoustically coupled wide-band thin film BAW filter |
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2011
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KR20140101773A (en) | 2014-08-20 |
CN104205632A (en) | 2014-12-10 |
JP2015502065A (en) | 2015-01-19 |
EP2777153A1 (en) | 2014-09-17 |
FI124732B (en) | 2014-12-31 |
US9219466B2 (en) | 2015-12-22 |
JP6564096B2 (en) | 2019-08-21 |
JP2018129839A (en) | 2018-08-16 |
KR101977334B1 (en) | 2019-05-10 |
WO2013068652A1 (en) | 2013-05-16 |
CN104205632B (en) | 2017-03-01 |
EP2777153B1 (en) | 2021-08-18 |
EP2777153A4 (en) | 2015-12-23 |
US20140312994A1 (en) | 2014-10-23 |
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