FI20105902A0 - Laite - Google Patents

Laite

Info

Publication number
FI20105902A0
FI20105902A0 FI20105902A FI20105902A FI20105902A0 FI 20105902 A0 FI20105902 A0 FI 20105902A0 FI 20105902 A FI20105902 A FI 20105902A FI 20105902 A FI20105902 A FI 20105902A FI 20105902 A0 FI20105902 A0 FI 20105902A0
Authority
FI
Finland
Application number
FI20105902A
Other languages
English (en)
Swedish (sv)
Inventor
Tapani Alasaarela
Pekka Soininen
Original Assignee
Beneq Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beneq Oy filed Critical Beneq Oy
Priority to FI20105902A priority Critical patent/FI20105902A0/fi
Publication of FI20105902A0 publication Critical patent/FI20105902A0/fi
Priority to DE112011102856.3T priority patent/DE112011102856B4/de
Priority to PCT/FI2011/050747 priority patent/WO2012028779A1/en
Priority to CN201180041762.0A priority patent/CN103080374B/zh
Priority to TW100130878A priority patent/TW201219117A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
FI20105902A 2010-08-30 2010-08-30 Laite FI20105902A0 (fi)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FI20105902A FI20105902A0 (fi) 2010-08-30 2010-08-30 Laite
DE112011102856.3T DE112011102856B4 (de) 2010-08-30 2011-08-29 Anordnung
PCT/FI2011/050747 WO2012028779A1 (en) 2010-08-30 2011-08-29 Apparatus
CN201180041762.0A CN103080374B (zh) 2010-08-30 2011-08-29 装置
TW100130878A TW201219117A (en) 2010-08-30 2011-08-29 Apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20105902A FI20105902A0 (fi) 2010-08-30 2010-08-30 Laite

Publications (1)

Publication Number Publication Date
FI20105902A0 true FI20105902A0 (fi) 2010-08-30

Family

ID=42669406

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20105902A FI20105902A0 (fi) 2010-08-30 2010-08-30 Laite

Country Status (5)

Country Link
CN (1) CN103080374B (fi)
DE (1) DE112011102856B4 (fi)
FI (1) FI20105902A0 (fi)
TW (1) TW201219117A (fi)
WO (1) WO2012028779A1 (fi)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI125341B (fi) * 2012-07-09 2015-08-31 Beneq Oy Laitteisto ja menetelmä substraatin käsittelemiseksi

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4597986A (en) * 1984-07-31 1986-07-01 Hughes Aircraft Company Method for photochemical vapor deposition
JP3103186B2 (ja) * 1992-03-19 2000-10-23 富士通株式会社 原子層エピタキシー装置および原子層エピタキシー法
MX9303141A (es) 1992-05-28 1994-04-29 Polar Materials Inc Metodos y aparatos para depositar recubrimientos de barrera.
JP2004014953A (ja) * 2002-06-10 2004-01-15 Tokyo Electron Ltd 処理装置および処理方法
US20050172897A1 (en) * 2004-02-09 2005-08-11 Frank Jansen Barrier layer process and arrangement
JP4734317B2 (ja) * 2005-02-17 2011-07-27 株式会社日立国際電気 基板処理方法および基板処理装置
KR20060103640A (ko) * 2005-03-28 2006-10-04 삼성전자주식회사 반도체 제조장치
JP5260050B2 (ja) 2005-05-27 2013-08-14 麒麟麦酒株式会社 ガスバリア性プラスチック容器の製造装置及びその容器の製造方法
JP2007111678A (ja) * 2005-10-24 2007-05-10 Sekisui Chem Co Ltd 線状被処理物用プラズマ処理装置
US20090304924A1 (en) * 2006-03-03 2009-12-10 Prasad Gadgil Apparatus and method for large area multi-layer atomic layer chemical vapor processing of thin films
US8043432B2 (en) * 2007-02-12 2011-10-25 Tokyo Electron Limited Atomic layer deposition systems and methods
JP2010073822A (ja) * 2008-09-17 2010-04-02 Tokyo Electron Ltd 成膜装置、成膜方法、プログラム及びコンピュータ可読記憶媒体
US20110076421A1 (en) * 2009-09-30 2011-03-31 Synos Technology, Inc. Vapor deposition reactor for forming thin film on curved surface

Also Published As

Publication number Publication date
TW201219117A (en) 2012-05-16
DE112011102856B4 (de) 2023-03-23
CN103080374A (zh) 2013-05-01
CN103080374B (zh) 2016-04-13
DE112011102856T5 (de) 2013-08-08
WO2012028779A1 (en) 2012-03-08

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Legal Events

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