FI20060719A - Ion etching method and ion beam etching device - Google Patents
Ion etching method and ion beam etching device Download PDFInfo
- Publication number
- FI20060719A FI20060719A FI20060719A FI20060719A FI20060719A FI 20060719 A FI20060719 A FI 20060719A FI 20060719 A FI20060719 A FI 20060719A FI 20060719 A FI20060719 A FI 20060719A FI 20060719 A FI20060719 A FI 20060719A
- Authority
- FI
- Finland
- Prior art keywords
- ion
- etching
- ion beam
- etching method
- beam etching
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00531—Dry etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/2633—Bombardment with radiation with high-energy radiation for etching, e.g. sputteretching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/64—Manufacture or treatment of solid state devices other than semiconductor devices, or of parts thereof, not peculiar to a single device provided for in groups H01L31/00 - H10K99/00
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/0143—Focussed beam, i.e. laser, ion or e-beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/202—Movement
- H01J2237/20214—Rotation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
- H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
- H01J2237/24528—Direction of beam or parts thereof in view of the optical axis, e.g. beam angle, angular distribution, beam divergence, beam convergence or beam landing angle on sample or workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3174—Etching microareas
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20060719A FI122010B (en) | 2006-08-09 | 2006-08-09 | Ion beam etching method and plant |
PCT/FI2007/050440 WO2008017733A1 (en) | 2006-08-09 | 2007-08-09 | Ion beam etching method and ion beam etching apparatus |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20060719 | 2006-08-09 | ||
FI20060719A FI122010B (en) | 2006-08-09 | 2006-08-09 | Ion beam etching method and plant |
Publications (3)
Publication Number | Publication Date |
---|---|
FI20060719A0 FI20060719A0 (en) | 2006-08-09 |
FI20060719A true FI20060719A (en) | 2008-02-10 |
FI122010B FI122010B (en) | 2011-07-15 |
Family
ID=36950625
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FI20060719A FI122010B (en) | 2006-08-09 | 2006-08-09 | Ion beam etching method and plant |
Country Status (2)
Country | Link |
---|---|
FI (1) | FI122010B (en) |
WO (1) | WO2008017733A1 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2585010C1 (en) * | 2014-12-12 | 2016-05-27 | Антон Борисович Архипов | Plant for double-sided finishing surface of intraocular lenses |
EP3809447A1 (en) * | 2019-10-18 | 2021-04-21 | FEI Company | Method for large-area 3d analysis of samples using glancing incidence fib milling |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5856332A (en) * | 1981-09-30 | 1983-04-04 | Hitachi Ltd | Correction of defect in mask and device thereof |
US5599749A (en) * | 1994-10-21 | 1997-02-04 | Yamaha Corporation | Manufacture of micro electron emitter |
RU2173003C2 (en) * | 1999-11-25 | 2001-08-27 | Септре Электроникс Лимитед | Method for producing silicon nanostructure, lattice of silicon quantum conducting tunnels, and devices built around them |
-
2006
- 2006-08-09 FI FI20060719A patent/FI122010B/en not_active IP Right Cessation
-
2007
- 2007-08-09 WO PCT/FI2007/050440 patent/WO2008017733A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
FI20060719A0 (en) | 2006-08-09 |
FI122010B (en) | 2011-07-15 |
WO2008017733A1 (en) | 2008-02-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Transfer of assignment of patent |
Owner name: ARUTYUNOV Free format text: ARUTYUNOV |
|
FG | Patent granted |
Ref document number: 122010 Country of ref document: FI |
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MM | Patent lapsed |