FI126970B - Atomikerroskasvatus jossa ensimmäinen ja toinen lähdeainelaji ovat läsnä samanaikaisesti - Google Patents
Atomikerroskasvatus jossa ensimmäinen ja toinen lähdeainelaji ovat läsnä samanaikaisesti Download PDFInfo
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- FI126970B FI126970B FI20140361A FI20140361A FI126970B FI 126970 B FI126970 B FI 126970B FI 20140361 A FI20140361 A FI 20140361A FI 20140361 A FI20140361 A FI 20140361A FI 126970 B FI126970 B FI 126970B
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- reaction chamber
- metal precursor
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- 239000002243 precursor Substances 0.000 claims description 219
- 238000006243 chemical reaction Methods 0.000 claims description 90
- 239000000758 substrate Substances 0.000 claims description 89
- 239000007789 gas Substances 0.000 claims description 79
- 229910052751 metal Inorganic materials 0.000 claims description 70
- 239000002184 metal Substances 0.000 claims description 70
- 230000004913 activation Effects 0.000 claims description 47
- 238000000034 method Methods 0.000 claims description 44
- 230000008929 regeneration Effects 0.000 claims description 31
- 238000011069 regeneration method Methods 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 29
- 239000012159 carrier gas Substances 0.000 claims description 15
- 230000005284 excitation Effects 0.000 claims description 10
- 239000002356 single layer Substances 0.000 claims description 8
- 238000006557 surface reaction Methods 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 5
- 150000002739 metals Chemical class 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- -1 oxides Chemical class 0.000 claims description 3
- 229920001046 Nanocellulose Polymers 0.000 claims description 2
- 239000011888 foil Substances 0.000 claims description 2
- 229910052724 xenon Inorganic materials 0.000 claims description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 2
- 230000000384 rearing effect Effects 0.000 claims 2
- 238000012258 culturing Methods 0.000 claims 1
- 239000001963 growth medium Substances 0.000 claims 1
- 238000010791 quenching Methods 0.000 claims 1
- 230000000171 quenching effect Effects 0.000 claims 1
- 229910052755 nonmetal Inorganic materials 0.000 description 64
- 238000000151 deposition Methods 0.000 description 41
- 230000008021 deposition Effects 0.000 description 41
- 239000012071 phase Substances 0.000 description 27
- 238000000231 atomic layer deposition Methods 0.000 description 25
- 238000012545 processing Methods 0.000 description 21
- 238000010926 purge Methods 0.000 description 16
- 229920006395 saturated elastomer Polymers 0.000 description 14
- 238000004891 communication Methods 0.000 description 12
- 239000012530 fluid Substances 0.000 description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000011068 loading method Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 230000015654 memory Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000009738 saturating Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005234 chemical deposition Methods 0.000 description 2
- 239000003446 ligand Substances 0.000 description 2
- 238000004375 physisorption Methods 0.000 description 2
- 239000012713 reactive precursor Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
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- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/487—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using electron radiation
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Claims (16)
1. Menetelmä, jossa: suoritetaan atomikerroskasvatussekvenssi, joka käsittää ainakin yhden kasvatussyklin, jossa kukin sykli tuottaa kasvatetun materiaalin monokerroksen, jossa kasvatussyklissä tuodaan ainakin ensimmäinen lähdeainelaji ja toinen lähdeainelaji reaktiokammiossa (210) olevan substraatin (201) pinnalle, tunnettu siitä, että sekä ensimmäinen että toinen lähdeainelaji ovat läsnä kaasufaasissa mainitussa reaktiokammiossa (210) samanaikaisesti, ja jossa kasvatussykli käsittää aktivointijakson ja regenerointijakson, ja jossa menetelmässä: aktivointijakson aikana ensimmäinen lähdeainelaji, joka on kiinnittynyt adsorptiolla substraatin (201) pinnalle edeltävän regenerointijakson aikana, eksitoidaan fotonienergialla, jolloin adsorptiolla kiinnittynyt ensimmäinen lähdeainelaji reagoi pinnalla toisen lähdeainelajin kanssa, joka on kaasufaasissa; ja tätä seuraavan regenerointijakson aikana ensimmäinen lähdeainelaji, joka on kaasufaasissa, reagoi toisen lähdeainelajin kanssa, joka on kiinnittynyt adsorptiolla pinnalle aktivointijakson aikana.
2. Patenttivaatimuksen 1 menetelmä, jossa toista lähdeainelajia käytetään kantajakaasuna ensimmäiselle lähdeainelajille.
3. Patenttivaatimuksen 1 tai 2 menetelmä, jossa eksitointi toteutetaan fotoneilla, jotka ovat fotonilähteen emittoimia, joka fotonilähde on valittu ryhmästä, joka käsittää: UV-lampun, LED-lampun, ksenonlampun, röntgensädelähteen, laserlähteen ja infrapunalähteen.
4. Minkä tahansa edeltävän vaatimuksen menetelmä, jossa kasvatettu materiaali valitaan ryhmästä, joka käsittää: metalleja, oksideja ja nitridejä.
5. Minkä tahansa edeltävän patenttivaatimuksen mukainen menetelmä, jossa kasvatusalusta valitaan ryhmästä, joka käsittää: kiekon, metallifolion, substraattirainan, paperin ja nanoselluloosan.
6. Minkä tahansa edeltävän patenttivaatimuksen menetelmä, jossa ensimmäistä lähtöainelajia eksitoidaan säätämällä fotonien aallonpituutta.
7. Minkä tahansa edeltävän patenttivaatimuksen menetelmä, jossa menetelmä käsittää, että sammutetaan fotonialtistus varjostimella (250) tai varjostavalla suuttimella (1050).
8. Minkä tahansa edeltävän patenttivaatimuksen menetelmä, jossa reaktiokammio (210) on ulomman kammion (220) ympäröimä, jossa menetelmässä: paineistetaan välitila ulomman kammion (220) ja reaktiokammion (210) välissä johtamalla inaktiivista kaasua välitilaan siten, että välitilassa on ylipaine verrattuna paineeseen reaktiokammion (210) sisäosassa.
9. Minkä tahansa edeltävän patenttivaatimuksen menetelmä, jossa reaktiot ovat vuorottaisia itsekyllästyviä pintareaktioita.
10. Minkä tahansa edeltävän patenttivaatimuksen menetelmä, jossa ensimmäinen lähdeaine on metallilähdeaine ja toinen lähdeaine on ei-metallinen lähdeaine.
11. Minkä tahansa edellisen patenttivaatimuksen menetelmä, jossa kasvatussyklit suoritetaan suorittamatta huuhtelujaksoja.
12. Laite, joka käsittää: reaktiokammion (210); ainakin yhden syöttölinjan (211); ja ohjausjärjestelmän, joka on konfiguroitu ohjaamaan laitetta suorittamaan atomikerroskasvatussekvenssin, joka käsittää ainakin yhden kasvatussyklin reaktiokammiossa (210), missä kukin sykli tuottaa kasvatetun materiaalin monokerroksen, ja missä kasvatussykli käsittää ainakin yhden lähdeainelajin ja toisen lähdeainelajin tuonnin mainitun ainakin yhden syöttölinjan (211) kautta reaktiokammiossa (210) olevan substraatin (201) pinnalle, tunnettu siitä, että ohjausjärjestelmä on lisäksi konfiguroitu ohjaamaan että sekä ensimmäisen että toisen lähdeainelajin lähdeainehöyry on läsnä kaasufaasissa mainitussa reaktiokammiossa (210) samanaikaisesti, ja jossa kasvatussykli käsittää aktivointijakson ja regeneraatiojakson, ja laite käsittää fotonilähteen (240) eksitoimaan, aktivointijakson aikana fotonienergialla, ensimmäinen lähdeainelaji, joka on kiinnittynyt adsorptiolla substraatin (201) pinnalle edeltävän regenerointijakson aikana, jolloin adsorptiolla kiinnittynyt ensimmäinen lähdeainelaji reagoi pinnalla toisen lähdeainelajin kanssa, joka on kaasufaasissa; laite on edelleen konfiguroitu saamaan aikaan sen, että: tätä seuraavan regenerointijakson aikana ensimmäinen lähdeainelaji, joka on kaasufaasissa, reagoi toisen lähdeainelajin kanssa, joka on kiinnittynyt adsorptiolla pinnalle aktivointijakson aikana.
13. Patenttivaatimuksen 12 laite, joka käsittää varjostavan suuttimen (1050), joka on sijoitettu kasvatusalustan (201) yläpuolelle kasvatusalustan (201) ja fotonilähteen (240) väliin, ja jota käytetään sekä varjostimena että lähdeaineen syöttösuuttimena reaktiokammiossa (210).
14. Minkä tahansa edeltävän patenttivaatimuksen 12 tai 13 laite, jossa reaktiot ovat vuorottaisia itsekyllästyviä pintareaktioita.
15. Minkä tahansa edeltävän patenttivaatimuksen 12-14 laite, jossa ensimmäinen lähdeaine on metallilähdeaine ja toinen lähdeaine on ei-metallinen lähdeaine.
16. Minkä tahansa edeltävän patenttivaatimuksen 12-15 laite, jossa ohjausjärjestelmä on konfiguroitu ohjaamaan, että kasvatussyklit suoritetaan suorittamatta huuhtelujaksoja.
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| FI20140361A FI126970B (fi) | 2014-12-22 | 2014-12-22 | Atomikerroskasvatus jossa ensimmäinen ja toinen lähdeainelaji ovat läsnä samanaikaisesti |
| JP2017529021A JP6814136B2 (ja) | 2014-12-22 | 2015-11-25 | Ａｌｄ法およびａｌｄ装置 |
| KR1020247012706A KR20240056632A (ko) | 2014-12-22 | 2015-11-25 | Ald 방법 및 장치 |
| US15/536,943 US10619241B2 (en) | 2014-12-22 | 2015-11-25 | ALD method and apparatus |
| PCT/FI2015/050819 WO2016102748A1 (en) | 2014-12-22 | 2015-11-25 | Ald method and apparatus |
| RU2017124639A RU2702669C2 (ru) | 2014-12-22 | 2015-11-25 | Способ и устройство для атомно-слоевого осаждения |
| CN201580069868.XA CN107109647A (zh) | 2014-12-22 | 2015-11-25 | Ald方法和设备 |
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| EP15872018.5A EP3237650B1 (en) | 2014-12-22 | 2015-11-25 | Ald method and apparatus |
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| TW104140939A TWI684667B (zh) | 2014-12-22 | 2015-12-07 | 沉積技術（一） |
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| US11725279B2 (en) | 2017-02-08 | 2023-08-15 | Picosun Oy | Deposition or cleaning apparatus with movable structure |
| CN107400878A (zh) * | 2017-07-26 | 2017-11-28 | 北京芯微诺达科技有限公司 | 一种原子层沉积设备的进气***及其方法 |
| RU2748658C1 (ru) * | 2020-07-16 | 2021-05-28 | Пикосан Ой | Устройство для осаждения или очистки с подвижной конструкцией и способ его эксплуатации |
| RU204415U1 (ru) * | 2020-12-17 | 2021-05-24 | Дмитрий Сергеевич Кузьмичев | Устройство для атомно-слоевого осаждения |
| KR20220164161A (ko) * | 2021-06-04 | 2022-12-13 | 주성엔지니어링(주) | 박막 증착 방법 |
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| DE102004004719A1 (de) | 2004-01-29 | 2005-08-18 | Basf Ag | Verfahren zur Herstellung von enantiomerenreinen Aminoalkoholen |
| US7326293B2 (en) * | 2004-03-26 | 2008-02-05 | Zyvex Labs, Llc | Patterned atomic layer epitaxy |
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- 2015-11-25 RU RU2017124639A patent/RU2702669C2/ru active
- 2015-11-25 SG SG11201703665WA patent/SG11201703665WA/en unknown
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Also Published As
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| JP2018500462A (ja) | 2018-01-11 |
| CN115961267A (zh) | 2023-04-14 |
| US10619241B2 (en) | 2020-04-14 |
| EP3237650A4 (en) | 2018-01-17 |
| KR20230163589A (ko) | 2023-11-30 |
| SG11201703665WA (en) | 2017-06-29 |
| EP3237650A1 (en) | 2017-11-01 |
| KR20170099904A (ko) | 2017-09-01 |
| FI20140361A (fi) | 2016-06-23 |
| JP6814136B2 (ja) | 2021-01-13 |
| RU2702669C2 (ru) | 2019-10-09 |
| CN107109647A (zh) | 2017-08-29 |
| RU2017124639A3 (fi) | 2019-05-08 |
| RU2017124639A (ru) | 2019-01-24 |
| ES2870613T3 (es) | 2021-10-27 |
| EP3237650B1 (en) | 2021-04-21 |
| KR102659545B1 (ko) | 2024-04-23 |
| WO2016102748A1 (en) | 2016-06-30 |
| US20170342560A1 (en) | 2017-11-30 |
| TWI684667B (zh) | 2020-02-11 |
| TW201634736A (zh) | 2016-10-01 |
| KR20240056632A (ko) | 2024-04-30 |
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