FI117980B - Förfarande för uppbyggnad av en tunnfilm på ett substrat - Google Patents

Förfarande för uppbyggnad av en tunnfilm på ett substrat Download PDF

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FI117980B
FI117980B FI20000900A FI20000900A FI117980B FI 117980 B FI117980 B FI 117980B FI 20000900 A FI20000900 A FI 20000900A FI 20000900 A FI20000900 A FI 20000900A FI 117980 B FI117980 B FI 117980B
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tube
reactant
gas
flow
reaction chamber
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FI20000900A
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FI20000900A0 (sv
FI20000900A (sv
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Pekka Soininen
Sven Lindfors
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Asm Int
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Publication of FI20000900A0 publication Critical patent/FI20000900A0/sv
Priority to TW089107027A priority Critical patent/TW576873B/zh
Priority to FI20000900A priority patent/FI117980B/sv
Application filed by Asm Int filed Critical Asm Int
Priority to KR1020010020045A priority patent/KR100756729B1/ko
Priority to JP2001117468A priority patent/JP4836347B2/ja
Priority to US09/835,931 priority patent/US6783590B2/en
Publication of FI20000900A publication Critical patent/FI20000900A/sv
Priority to US10/893,027 priority patent/US7018478B2/en
Priority to US11/358,698 priority patent/US20070054049A1/en
Publication of FI117980B publication Critical patent/FI117980B/sv
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4402—Reduction of impurities in the source gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrostatic Separation (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Claims (24)

1. Förfarande för bildande medelst ALD-processen av en tunnfilm pä ett substrat anordnat i en reaktionskammare, enligt vilket förfarande 5. en reaktant förängas ffän en reaktantkälla upprätthällen vid en förängningstempera- tur, - den förängade reaktanten leds till reaktionskamxnaren via ett första rör, - reaktanten mätäs in i nämnda reaktionskammare i form av ängfaspulser upprepat och alternerande med ätminstone en annan reaktants ängsfaspulser, 10. den förängade reaktanten leds genom en renare innan reaktanten matas in i reak- tionskammaren och - ängfasreaktantema omsätts med substratets yta vid en reaktionstemperatur for att bilda en tunnfilm pä substratet, k ä n n e t e c k n a t av att 15. passiv gas matas in i det första röret via ett andra rör, vilket är anslutet till det första röret vid en anslutningspunkt, under tidsintervallet mellan reaktantens ängfaspulser pä sä sätt, att en gasfasbarriär bildas mot flödet av förängade reaktanter frän reak-tantkällan via det första röret in i reaktionskammaren, och - den passiva gasen avlägsnas frän det nämnda första röret via ett tredje rör, vilket är 20 anslutet tili det första röret, varvid nämnda tredje rör upprätthälIs vid en temperatur, * · *”·’ som är densamma eller högre än kondenseringsstemperaturen för ängfasreaktanten, • · ’ och som är anslutet tili det första röret vid en punkt uppströms av det andra röret.
• * · * · * * · • · ♦ * ,*" 2. Förfarande i enlighet med patentkrav 1, kännetecknat av att ätminstone för nä- • I • · "I 25 gon del av längden av det första röret leds den via det andra röret matade passiva gasen i • · motsatt riktning i torhällande tili reaktantflödet.
• · · • ♦ · . · · ·. 3. Förfarande i enlighet med patentkrav 1, kännetecknat av att det andra röret upp- • · • · · rätthälls vid en temperatur, vilken är densamma eller lägre än reaktionstemperaturen. 30
**··« • · , 4. Förfarande i enlighet med nägot av patentkraven 1 - 3, k ä n n e t e c k n a t av att det * * : andra röret omfattar en öppen gasflödeskanal. « · * « · * ♦ · * · 22 1 1 7980
5. Förfarande i enlighet med nägot av de föregäende patentkraven 1-4, kanne- t e c k n a t av att den passiva gasen mätäs in i det första röret vid en punkt nedströms frän den punkt varvid det andra röret är anslutet tili det första röret för att ästadkomma ett flöde av passiv gas, vilket riktas i motsatt riktning i lorhällande tili det första rörets reaktantflö-5 de.
6. Förfarande i enlighet med nägot av de föregäende patentkraven 1-5, känne-tecknat av att renaren utgörs av ett filter, en keramisk molekylfalla eller ett elektrosta-tiskt filter, vilket förmär separera dispergerade flytande eller fasta droppar eller partiklar 10 eller molekyler av minimimolekylstorlek frän reaktantgasflödet.
7. Förfarande i enlighet med nägot av de föregäende patentkraven 1-5, känne-tecknat av att renaren utgörs av en aktiv renare, vilken omfattar funktionella grupper, vilka förmär reagera med komponenter i reaktantgasflödet. 15
8. Förfarande i enlighet med nägot av de föregäende patentkraven 1 - 7, k ä n n βίε c k n a t av att det första röret sammankopplar reaktantkällan med reaktionskammaren och den förängade fasta eller flytande reaktanten frigörs frän suspenderade flytande eller fasta partiklar i ett filter, vilket är anordnat i det första röret vid reaktantens flödesväg. 20 ··* '•"S
9. Förfarande i enlighet med patentkrav 8, k ä n n e t e c k n at av att det andra röret an- * · * ·*,.,·* sluts tili det första röret vid en punkt mellan filtret och reaktionskammaren. * · * * * * • · · • · ·
10. Förfarande i enlighet med patentkrav 9, kännetecknat av att över filtret passerar * · · 25 ett enkelriktat gasflöde. *·· • · • · • · ·
11. Förfarande i enlighet med patentkrav 9 eller 10, kännetecknat av att gasfasbar- • · · . * * * ♦ * riären bildas mellan filtret och reaktionskammaren. ·*· • · • · ··· • ♦ ♦ 30
12. Förfarande i enlighet med patentkrav 8, kännetecknat av att det andra röret ♦ * * ansluts tili det första röret vid en punkt mellan reaktantkällan och filtret. • · • · · ·♦·.···· *··* • * ··* ·♦*,' • * IV 23 1 1 7980
13. Förfarande ienlighet medpatentkrav 12, kännetecknat avattdettredjeröret ansluts tili det första röret vid en punkt mellan anslutningspunkten mellan det första röret och det andra röret och reaktantkällan. 5
14. Förfarande i enlighet med nägot av de föregäende patentkraven, kännetecknat av att reaktantkällan kommunicerar fritt med det första röret.
15. Förfarande i enlighet med nägot av de föregäende patentkraven, kännetecknat av att de oreagerade ängfasreaktantema avlägsnas frän reaktionskammaren via ett utgängs-10 rör, och det tredje röret ansluts tili utgängsröret.
16. Förfarande i enlighet med nägot av patentkraven 1 -14, k ä n n e t e c k n a t av att det tredje röret ansluts tili ett separat tömningsorgan. 15
17. Förfarande i enlighet med nägot av de föregäende patentkraven, kännetecknat av att passiv gas används som bärgas för den iorängade fasta eller flytande reaktanten.
18. Förfarande i enlighet med patentkrav 17, kännetecknat av att väsentligen ali ängfasreaktant frän reaktantkällan leds via det tredje röret tili tömningen mellan inmat-20 ningen av ängfasreaktantpulser tili reaktionskammaren. • · · • · . -W ta * · · ) ··· ϊ... ϊ
19. Förfarande i enlighet med nägot av de föregäende patentkraven, kännetecknat • · · ·.· i av att det tredje röret ansluts tili ett kondenseringskärl, vilket befinner sig i ett lägre tryck • M ·...· och/eller vid en lägre temperatur för att ästadkomma kondensering av förängade reaktant- * · · f 25 rester. * · · • · • · ··· [·.
20. Förfarande i enlighet med nägot av de föregäende patentkraven, kännetecknat • * · *;*;* av att det tredje röret ansluts tili ett fjärde rör för att mata passiv gas in i det tredje röret. t I • · • * · « · · 30
21. Förfarande i enlighet med patentkrav 19, kännetecknat av att passiv gas mätäs * " in i det tredje röret för att reducera mängden gas, som avlägsnats frän det första röret. t « · • · · ····. ;.· • φ
22. Förfarande i enlighet med patentkrav 20 eller 21, kännetecknat avattpassiv gas inmatas under reaktantens pulsning. 24 1 1 7980
23. Förfarande i enlighet med nägot av de föregäende patentkraven 20-22, kanne-tecknatavatt passiv gas mätäs in i det tredje röret vid en punkt ovanför vilken flödes-begränsare som heist. 5
24. Förfarande i enlighet med nägot av de föregäende patentkraven, kännetecknat av att passiv gas mätäs in i reaktionskammaren mellan nämnda reaktanters ängfaspulser. • · 1 2 3 • · * · • · · • · · • 1 * 1 *·· *** ' · ··· • 1 · • · • « s : ··· · · • · • · ***; • 1 » • ♦ • · ··· ··· • · · ··1 • · 1 • · • • · · ··· # · · · • · · · • · * • · • · « • · · • · · · · 2 · · 1 3 • 1
FI20000900A 2000-04-14 2000-04-14 Förfarande för uppbyggnad av en tunnfilm på ett substrat FI117980B (sv)

Priority Applications (7)

Application Number Priority Date Filing Date Title
TW089107027A TW576873B (en) 2000-04-14 2000-04-14 Method of growing a thin film onto a substrate
FI20000900A FI117980B (sv) 2000-04-14 2000-04-14 Förfarande för uppbyggnad av en tunnfilm på ett substrat
KR1020010020045A KR100756729B1 (ko) 2000-04-14 2001-04-14 기판상에 박막을 성장시키는 방법
JP2001117468A JP4836347B2 (ja) 2000-04-14 2001-04-16 基板上に薄膜を成長させる方法
US09/835,931 US6783590B2 (en) 2000-04-14 2001-04-16 Method of growing a thin film onto a substrate
US10/893,027 US7018478B2 (en) 2000-04-14 2004-07-16 Method of growing a thin film onto a substrate
US11/358,698 US20070054049A1 (en) 2000-04-14 2006-02-21 Method of growing a thin film onto a substrate

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Application Number Priority Date Filing Date Title
FI20000900 2000-04-14
FI20000900A FI117980B (sv) 2000-04-14 2000-04-14 Förfarande för uppbyggnad av en tunnfilm på ett substrat

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FI20000900A0 FI20000900A0 (sv) 2000-04-14
FI20000900A FI20000900A (sv) 2001-10-15
FI117980B true FI117980B (sv) 2007-05-15

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JP (1) JP4836347B2 (sv)
KR (1) KR100756729B1 (sv)
FI (1) FI117980B (sv)
TW (1) TW576873B (sv)

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FI20001694A0 (sv) * 2000-07-20 2000-07-20 Asm Microchemistry Oy Förfarande för uppbyggnad av en tunnfilm på ett substrat
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JP2002004054A (ja) 2002-01-09
US6783590B2 (en) 2004-08-31
US7018478B2 (en) 2006-03-28
US20070054049A1 (en) 2007-03-08
FI20000900A0 (sv) 2000-04-14
TW576873B (en) 2004-02-21
JP4836347B2 (ja) 2011-12-14
KR100756729B1 (ko) 2007-09-07
US20040261706A1 (en) 2004-12-30
US20010054377A1 (en) 2001-12-27
FI20000900A (sv) 2001-10-15

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