ES469346A1 - Procedimiento de obtencion de una celula solar - Google Patents
Procedimiento de obtencion de una celula solarInfo
- Publication number
- ES469346A1 ES469346A1 ES469346A ES469346A ES469346A1 ES 469346 A1 ES469346 A1 ES 469346A1 ES 469346 A ES469346 A ES 469346A ES 469346 A ES469346 A ES 469346A ES 469346 A1 ES469346 A1 ES 469346A1
- Authority
- ES
- Spain
- Prior art keywords
- flexible substrate
- semiconducting film
- film
- electrolytically preparing
- electrolytically
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 title abstract 2
- BKQMNPVDJIHLPD-UHFFFAOYSA-N OS(=O)(=O)[Se]S(O)(=O)=O Chemical compound OS(=O)(=O)[Se]S(O)(=O)=O BKQMNPVDJIHLPD-UHFFFAOYSA-N 0.000 abstract 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 abstract 1
- 239000012736 aqueous medium Substances 0.000 abstract 1
- 238000001962 electrophoresis Methods 0.000 abstract 1
- 150000003346 selenoethers Chemical class 0.000 abstract 1
- 239000000725 suspension Substances 0.000 abstract 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D13/00—Electrophoretic coating characterised by the process
- C25D13/02—Electrophoretic coating characterised by the process with inorganic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02469—Group 12/16 materials
- H01L21/02474—Sulfides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02557—Sulfides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/0256—Selenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02562—Tellurides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
- H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table
- H01L31/03365—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table comprising only Cu2X / CdX heterojunctions, X being an element of Group VI of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Electromagnetism (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Procedimiento de obtención de una célula solar, caracterizado porque comprende las etapas de preparar una primera película delgada sustancialmente libre de picaduras, de un sulfuro, sulfoseleniuro, seleniuro o teluro semiconductor, o precursor del mismo, en un medio acuoso; y formar una unión entre la primera película y una segunda película que comprende un metal o un semiconductor que tiene una mayoría de ondas portadoras electrizadas de carga electrónica opuesta a la mayoría de ondas portadoras electrizadas de la primera película, estando la primera película en contacto eléctrico con un primer medio conductor de corriente y estando la segunda película, cuando es un semiconductor, en contacto eléctrico con un segundo medio conductor de corriente, permitiendo al menos uno de los medios conductores de corriente que la radiación incidente sobre los mismos penetre en la unión.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB20199/76A GB1573320A (en) | 1976-05-17 | 1976-05-17 | Electrophopretic deposition of inorganic films |
Publications (1)
Publication Number | Publication Date |
---|---|
ES469346A1 true ES469346A1 (es) | 1979-01-16 |
Family
ID=10142064
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES458847A Expired ES458847A1 (es) | 1976-05-17 | 1977-05-17 | Procedimiento de obtencion de una pelicula fina sustancial- mente libre de picaduras. |
ES469346A Expired ES469346A1 (es) | 1976-05-17 | 1978-05-02 | Procedimiento de obtencion de una celula solar |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES458847A Expired ES458847A1 (es) | 1976-05-17 | 1977-05-17 | Procedimiento de obtencion de una pelicula fina sustancial- mente libre de picaduras. |
Country Status (11)
Country | Link |
---|---|
US (1) | US4225408A (es) |
JP (1) | JPS52155994A (es) |
AU (1) | AU509321B2 (es) |
BE (1) | BE854762A (es) |
CA (1) | CA1086682A (es) |
DE (1) | DE2722045A1 (es) |
ES (2) | ES458847A1 (es) |
FR (1) | FR2352078A1 (es) |
GB (1) | GB1573320A (es) |
IT (1) | IT1143661B (es) |
NL (1) | NL7705384A (es) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2861418D1 (en) * | 1977-11-15 | 1982-01-28 | Ici Plc | A method for the preparation of thin photoconductive films and of solar cells employing said thin photoconductive films |
WO1979000992A1 (en) * | 1978-04-27 | 1979-11-29 | Nat Res Dev | Photochemical electrode |
GB2117795A (en) * | 1982-04-06 | 1983-10-19 | Standard Telephones Cables Ltd | Fabricating capacitors; forming ceramic films |
GB2117796B (en) * | 1982-04-06 | 1985-06-19 | Standard Telephones Cables Ltd | Forming ceramic layers; dielectric structures |
US4584074A (en) * | 1982-12-07 | 1986-04-22 | International Standard Electric Corporation | Capacitors |
DE3328899C2 (de) * | 1983-08-10 | 1985-07-11 | Nukem Gmbh, 6450 Hanau | Photovoltaische Zelle |
US4695356A (en) * | 1984-01-26 | 1987-09-22 | Andromaque S.A. | Electrochemical procedure for the direct forming of generally thin elements with various contours and surfaces of usual and technical ceramics or refractory material |
US4952446A (en) * | 1986-02-10 | 1990-08-28 | Cornell Research Foundation, Inc. | Ultra-thin semiconductor membranes |
GB8715082D0 (en) * | 1987-06-26 | 1987-08-05 | Prutec Ltd | Solar cells |
WO1993011283A1 (en) * | 1991-11-27 | 1993-06-10 | Minnesota Mining And Manufacturing Company | Electrophoretic deposition of transition metal dichalcogenides |
US5498270A (en) * | 1994-09-12 | 1996-03-12 | Smith; Strom W. | Sulfur trap |
US6126740A (en) * | 1995-09-29 | 2000-10-03 | Midwest Research Institute | Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films |
US6965196B2 (en) * | 1997-08-04 | 2005-11-15 | Lumimove, Inc. | Electroluminescent sign |
US6268014B1 (en) | 1997-10-02 | 2001-07-31 | Chris Eberspacher | Method for forming solar cell materials from particulars |
US20010042329A1 (en) * | 2000-04-13 | 2001-11-22 | Matthew Murasko | Electroluminescent sign |
SE519287C2 (sv) * | 2000-08-31 | 2003-02-11 | Ericsson Telefon Ab L M | Inkapslat mönsterkort med sekventiellt uppbyggd ledningsmönster och tillverkningsförfarande |
US20020159246A1 (en) * | 2001-03-21 | 2002-10-31 | Matthew Murasko | Illuminated display system |
EP1386340B1 (en) * | 2001-03-22 | 2007-10-31 | Lumimove, Inc. | Illuminated display system and process |
US7048400B2 (en) * | 2001-03-22 | 2006-05-23 | Lumimove, Inc. | Integrated illumination system |
AU2002345988A1 (en) * | 2001-06-27 | 2003-03-03 | Lumimove, Inc. | Electroluminescent panel having controllable transparency |
US20030159941A1 (en) * | 2002-02-11 | 2003-08-28 | Applied Materials, Inc. | Additives for electroplating solution |
CN1830753A (zh) * | 2005-03-10 | 2006-09-13 | 清华大学 | 碳纳米管组装方法和碳纳米管器件 |
CN1840465B (zh) * | 2005-03-30 | 2010-09-29 | 清华大学 | 一维纳米材料器件制造方法 |
CN100572260C (zh) * | 2005-03-31 | 2009-12-23 | 清华大学 | 一维纳米材料器件的制造方法 |
US8409906B2 (en) | 2010-10-25 | 2013-04-02 | Imra America, Inc. | Non-vacuum method for fabrication of a photovoltaic absorber layer |
US8748216B2 (en) | 2010-10-25 | 2014-06-10 | Imra America, Inc. | Non-vacuum method for fabrication of a photovoltaic absorber layer |
TWI451580B (zh) * | 2011-09-26 | 2014-09-01 | Ind Tech Res Inst | 薄膜太陽能電池之製法 |
FR2981952B1 (fr) * | 2011-11-02 | 2015-01-02 | Fabien Gaben | Procede de realisation de couches minces denses par electrophorese |
WO2014025743A1 (en) | 2012-08-07 | 2014-02-13 | Cornell University | Binder free and carbon free nanoparticle containing component, method and applications |
FR3080957B1 (fr) | 2018-05-07 | 2020-07-10 | I-Ten | Electrodes mesoporeuses pour dispositifs electrochimiques en couches minces |
CN114672865A (zh) * | 2022-04-26 | 2022-06-28 | 昆明理工大学 | 一种CNTs/Cu复合板材的制备方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2851408A (en) * | 1954-10-01 | 1958-09-09 | Westinghouse Electric Corp | Method of electrophoretic deposition of luminescent materials and product resulting therefrom |
DE1171995B (de) * | 1962-02-08 | 1964-06-11 | Ibm Deutschland | Verfahren zum Aufbringen von Fotoelementen auf nichtleitende Traeger |
DE1496879A1 (de) * | 1964-07-21 | 1969-08-14 | Licentia Gmbh | Verfahren zur elektrophoretischen Abscheidung von Nickelseleniden |
US3879276A (en) * | 1974-04-10 | 1975-04-22 | Int Standard Electric Corp | Electrophoretic deposition of selenium |
US4011149A (en) * | 1975-11-17 | 1977-03-08 | Allied Chemical Corporation | Photoelectrolysis of water by solar radiation |
-
1976
- 1976-05-17 GB GB20199/76A patent/GB1573320A/en not_active Expired
-
1977
- 1977-05-16 IT IT23623/77A patent/IT1143661B/it active
- 1977-05-16 NL NL7705384A patent/NL7705384A/xx not_active Application Discontinuation
- 1977-05-16 FR FR7714989A patent/FR2352078A1/fr active Granted
- 1977-05-16 DE DE19772722045 patent/DE2722045A1/de not_active Ceased
- 1977-05-17 CA CA278,634A patent/CA1086682A/en not_active Expired
- 1977-05-17 ES ES458847A patent/ES458847A1/es not_active Expired
- 1977-05-17 JP JP5698677A patent/JPS52155994A/ja active Pending
- 1977-05-17 BE BE177686A patent/BE854762A/xx not_active IP Right Cessation
- 1977-05-17 AU AU25197/77A patent/AU509321B2/en not_active Expired
-
1978
- 1978-05-02 ES ES469346A patent/ES469346A1/es not_active Expired
-
1979
- 1979-04-18 US US06/031,874 patent/US4225408A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
ES458847A1 (es) | 1978-08-16 |
GB1573320A (en) | 1980-08-20 |
CA1086682A (en) | 1980-09-30 |
FR2352078B1 (es) | 1982-07-02 |
IT1143661B (it) | 1986-10-22 |
NL7705384A (nl) | 1977-11-21 |
AU2519777A (en) | 1978-11-23 |
BE854762A (fr) | 1977-11-17 |
JPS52155994A (en) | 1977-12-24 |
DE2722045A1 (de) | 1977-12-08 |
US4225408A (en) | 1980-09-30 |
AU509321B2 (en) | 1980-05-08 |
FR2352078A1 (fr) | 1977-12-16 |
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