ES404386A1 - Un dispositivo semiconductor. - Google Patents

Un dispositivo semiconductor.

Info

Publication number
ES404386A1
ES404386A1 ES404386A ES404386A ES404386A1 ES 404386 A1 ES404386 A1 ES 404386A1 ES 404386 A ES404386 A ES 404386A ES 404386 A ES404386 A ES 404386A ES 404386 A1 ES404386 A1 ES 404386A1
Authority
ES
Spain
Prior art keywords
region
insulating layer
layer
junction
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES404386A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES404386A1 publication Critical patent/ES404386A1/es
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402Field plates
    • H01L29/405Resistive arrangements, e.g. resistive or semi-insulating field plates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • H01L29/732Vertical transistors
    • H01L29/7322Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861Diodes
    • H01L29/8611Planar PN junction diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
ES404386A 1971-07-02 1972-06-30 Un dispositivo semiconductor. Expired ES404386A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7109139A NL7109139A (es) 1971-07-02 1971-07-02

Publications (1)

Publication Number Publication Date
ES404386A1 true ES404386A1 (es) 1975-06-01

Family

ID=19813531

Family Applications (1)

Application Number Title Priority Date Filing Date
ES404386A Expired ES404386A1 (es) 1971-07-02 1972-06-30 Un dispositivo semiconductor.

Country Status (12)

Country Link
JP (1) JPS5231154B1 (es)
AU (1) AU4397372A (es)
BE (1) BE785747A (es)
CA (1) CA963174A (es)
CH (1) CH546483A (es)
DE (1) DE2231521C2 (es)
ES (1) ES404386A1 (es)
FR (1) FR2144741B1 (es)
GB (1) GB1394086A (es)
IT (1) IT959277B (es)
NL (1) NL7109139A (es)
SE (1) SE377864B (es)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2011178B (en) * 1977-12-15 1982-03-17 Philips Electronic Associated Fieldeffect devices
JPS55140673A (en) * 1979-04-14 1980-11-04 Yamaha Motor Co Ltd Rear arm mount construction
DE2944937A1 (de) * 1979-11-07 1981-06-04 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement
US4947232A (en) * 1980-03-22 1990-08-07 Sharp Kabushiki Kaisha High voltage MOS transistor
JPS56169369A (en) * 1980-05-30 1981-12-26 Sharp Corp High withstand voltage mos field effect semiconductor device
JPS56169368A (en) * 1980-05-30 1981-12-26 Sharp Corp High withstand voltage mos field effect semiconductor device
DE3520599A1 (de) * 1984-06-15 1985-12-19 Rca Corp., Princeton, N.J. Halbleiterbauelement
JPS61114574A (ja) * 1984-11-09 1986-06-02 Hitachi Ltd 半導体装置
JP2615151B2 (ja) * 1988-08-19 1997-05-28 株式会社村田製作所 チップ型コイル及びその製造方法
US5382826A (en) * 1993-12-21 1995-01-17 Xerox Corporation Stacked high voltage transistor unit
DE102016120300A1 (de) 2016-10-25 2018-04-26 Infineon Technologies Austria Ag Hochspannungsabschlussstruktur einer Leistungshalbleitervorrichtung
DE102016120301A1 (de) * 2016-10-25 2018-04-26 Infineon Technologies Ag Leistungshalbleitervorrichtungs-Abschlussstruktur

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1260618A (en) * 1969-08-09 1972-01-19 Soc Gen Semiconduttori Spa Planar junctions with integrated resistor, for high voltages

Also Published As

Publication number Publication date
DE2231521A1 (de) 1973-01-18
DE2231521C2 (de) 1982-05-13
NL7109139A (es) 1973-01-04
FR2144741B1 (es) 1977-08-26
AU4397372A (en) 1974-01-03
IT959277B (it) 1973-11-10
BE785747A (fr) 1973-01-02
CA963174A (en) 1975-02-18
FR2144741A1 (es) 1973-02-16
CH546483A (de) 1974-02-28
JPS5231154B1 (es) 1977-08-12
SE377864B (es) 1975-07-28
GB1394086A (en) 1975-05-14

Similar Documents

Publication Publication Date Title
ES404386A1 (es) Un dispositivo semiconductor.
US3673427A (en) Input circuit structure for mos integrated circuits
ES319914A1 (es) Un dispositivo transitor de efecto de campo de barrera aislada.
ES328172A1 (es) Un dispositivo semiconductor compuesto.
KR850006654A (ko) 반도체 장치
GB1426683A (en) Leakage current prevention in semiconductor integrated circuit devices
ES420364A1 (es) Un dispositivo de semiconductor.
ES401854A1 (es) Un dispositivo semiconductor.
ES155518U (es) Dispositivo de barra colectora eléctrica
UST964009I4 (en) High voltage semiconductor structure
ES321146A1 (es) Un dispositivo semiconductor.
ES460687A1 (es) Un semiconductor planar perfeccionado.
ES392402A1 (es) Un dispositivo semiconductor.
ES403881A1 (es) Un dispositivo semiconductor.
SE407302B (sv) Fast elektrisk isolation av kolveteplast, eventuellt fiberarmerad, pa en elektrisk ledare, der atminstone en del av den fasta isolationen kommer i kontakt med en elektriskt isolerande olja
ES375616A1 (es) Una disposicion de hoja electricamente aislante, flexible.
ES322411A3 (es) Un dispositivo electrico semiconductor.
GB1519831A (en) Symmetrical circuit arrangement for forming a variable ac resistance
ES322410A1 (es) Un dispositivo electrico semiconductor.
ES308769A3 (es) Un dispositivo semiconductor miniatura
ES297171A1 (es) Un dispositivo electrico del tipo que tiene una capa o pelicula conductora sobre una base no conductora
ES374491A1 (es) Un dispositivo de lamina aislante flexible sobre el cual esta situado un diseno de pistas conductoras.
ES406020A1 (es) Un dispositivo de micro-ondas.
ES401687A1 (es) Un dispositivo semiconductor.
ES294824A1 (es) Un metodo para fabricar un dispositivo semiconductor