ES386770A1 - Microampere current source - Google Patents

Microampere current source

Info

Publication number
ES386770A1
ES386770A1 ES386770A ES386770A ES386770A1 ES 386770 A1 ES386770 A1 ES 386770A1 ES 386770 A ES386770 A ES 386770A ES 386770 A ES386770 A ES 386770A ES 386770 A1 ES386770 A1 ES 386770A1
Authority
ES
Spain
Prior art keywords
circuit
transistor
current
emitter
current source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES386770A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES386770A1 publication Critical patent/ES386770A1/en
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is dc
    • G05F3/10Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Amplifiers (AREA)
  • Control Of Electrical Variables (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

A microamp current source arrangement for an integrated circuit, in which it is derived from a direct control current, of the order of a maximum of 10 microamps, an attenuated direct current, the direct control current circulating through a first circuit that includes a rectification junction, while the attenuated direct current flows through the emitter-collector circuit of a transistor, whose base-emitter circuit has been included in a second circuit that has the same direction of passage and has connected in parallel to the first-mentioned circuit, a substantially signal-free direct current being derived for at least one transistor, from the integrated circuit, from the collector of this transistor, having included a resistance in the closed loop constituted by the two circuits in parallel, characterized in that the emitter of the transistor has been connected to a point of constant potential, through s of a current source supplying the resistance with a current such that the voltage drop across the rectification junction exceeds the voltage drop across the base-emitter diode of the transistor by at least 20 millivolts and, as maximum 540 millivolts. (Machine-translation by Google Translate, not legally binding)
ES386770A 1969-12-25 1970-12-23 Microampere current source Expired ES386770A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6919466A NL6919466A (en) 1969-12-25 1969-12-25

Publications (1)

Publication Number Publication Date
ES386770A1 true ES386770A1 (en) 1973-04-01

Family

ID=19808721

Family Applications (1)

Application Number Title Priority Date Filing Date
ES386770A Expired ES386770A1 (en) 1969-12-25 1970-12-23 Microampere current source

Country Status (7)

Country Link
JP (1) JPS509976B1 (en)
CA (1) CA944020A (en)
DE (1) DE2059756B2 (en)
ES (1) ES386770A1 (en)
GB (1) GB1339908A (en)
HK (1) HK57876A (en)
NL (1) NL6919466A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3329664A1 (en) * 1983-08-17 1985-03-07 Telefunken electronic GmbH, 7100 Heilbronn CIRCUIT FOR CONVERTING SIGNAL SIGNALS
DE4111584A1 (en) * 1991-04-10 1992-10-15 Thomson Brandt Gmbh CIRCUIT FOR GENERATING VERY SMALL CURRENTS
CN113884203B (en) * 2021-08-30 2023-11-14 南通职业大学 Semiconductor Vacuum Diode Temperature Sensor

Also Published As

Publication number Publication date
NL6919466A (en) 1971-06-29
DE2059756A1 (en) 1971-07-01
HK57876A (en) 1976-10-01
JPS509976B1 (en) 1975-04-17
DE2059756B2 (en) 1976-06-10
CA944020A (en) 1974-03-19
GB1339908A (en) 1973-12-05

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