ES296790A1 - Un dispositivo de circuito oscilador - Google Patents

Un dispositivo de circuito oscilador

Info

Publication number
ES296790A1
ES296790A1 ES0296790A ES296790A ES296790A1 ES 296790 A1 ES296790 A1 ES 296790A1 ES 0296790 A ES0296790 A ES 0296790A ES 296790 A ES296790 A ES 296790A ES 296790 A1 ES296790 A1 ES 296790A1
Authority
ES
Spain
Prior art keywords
portal
electrodes
source
effect transistor
insulated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES0296790A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Publication of ES296790A1 publication Critical patent/ES296790A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1203—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier being a single transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/1256—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a variable inductance
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1296—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the feedback circuit comprising a transformer

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
ES0296790A 1963-02-25 1964-02-24 Un dispositivo de circuito oscilador Expired ES296790A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US260451A US3281699A (en) 1963-02-25 1963-02-25 Insulated-gate field-effect transistor oscillator circuits

Publications (1)

Publication Number Publication Date
ES296790A1 true ES296790A1 (es) 1964-05-01

Family

ID=22989220

Family Applications (1)

Application Number Title Priority Date Filing Date
ES0296790A Expired ES296790A1 (es) 1963-02-25 1964-02-24 Un dispositivo de circuito oscilador

Country Status (3)

Country Link
US (1) US3281699A (es)
AT (1) AT258358B (es)
ES (1) ES296790A1 (es)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3391354A (en) * 1963-12-19 1968-07-02 Hitachi Ltd Modulator utilizing an insulated gate field effect transistor
US3348154A (en) * 1965-12-14 1967-10-17 Scott Inc H H Signal mixing and conversion apparatus employing field effect transistor with squarelaw operation
US3348155A (en) * 1966-02-10 1967-10-17 Scott Inc H H Oscillator-converter apparatus employing field effect transistor with neutralizationand square law operation
US3487338A (en) * 1966-09-21 1969-12-30 Rca Corp Three terminal semiconductor device for converting amplitude modulated signals into frequency modulated signals
US3517325A (en) * 1967-03-09 1970-06-23 Instrumentation Labor Inc Compensated dc amplifier input stage employing junction field effect transistors
US3421111A (en) * 1967-08-29 1969-01-07 Us Navy Voltage controlled field-effect transistor l-c oscillator
US3571627A (en) * 1968-07-29 1971-03-23 Bell Telephone Labor Inc Regulated harmonic generator
US3775698A (en) * 1972-08-04 1973-11-27 Westinghouse Electric Corp A circuit for generating a high power rf signal having low am and fm noise components
US4158182A (en) * 1978-07-31 1979-06-12 Harris Corporation Low noise oscillator circuit
US4670722A (en) * 1981-03-09 1987-06-02 The United States Of America As Represented By The Secretary Of The Navy FET oscillator having controllable reactance element-controlled two port feedback network

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE511293A (es) * 1951-08-24
US2769926A (en) * 1953-03-09 1956-11-06 Gen Electric Non-linear resistance device
NL223101A (es) * 1957-11-30 1900-01-01
US3134912A (en) * 1960-05-02 1964-05-26 Texas Instruments Inc Multivibrator employing field effect devices as transistors and voltage variable resistors in integrated semiconductive structure

Also Published As

Publication number Publication date
US3281699A (en) 1966-10-25
AT258358B (de) 1967-11-27

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