ES280288A1 - Un dispositivo transistor de juntura - Google Patents

Un dispositivo transistor de juntura

Info

Publication number
ES280288A1
ES280288A1 ES0280288A ES280288A ES280288A1 ES 280288 A1 ES280288 A1 ES 280288A1 ES 0280288 A ES0280288 A ES 0280288A ES 280288 A ES280288 A ES 280288A ES 280288 A1 ES280288 A1 ES 280288A1
Authority
ES
Spain
Prior art keywords
zones
transistor
base zone
lead
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES0280288A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES280288A1 publication Critical patent/ES280288A1/es
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063Electrolytic etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
  • Weting (AREA)
ES0280288A 1961-08-28 1962-08-25 Un dispositivo transistor de juntura Expired ES280288A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL268692 1961-08-28

Publications (1)

Publication Number Publication Date
ES280288A1 true ES280288A1 (es) 1962-12-01

Family

ID=19753251

Family Applications (1)

Application Number Title Priority Date Filing Date
ES0280288A Expired ES280288A1 (es) 1961-08-28 1962-08-25 Un dispositivo transistor de juntura

Country Status (8)

Country Link
US (1) US3268781A (es)
AT (1) AT239853B (es)
BE (1) BE621788A (es)
CH (1) CH407333A (es)
DK (1) DK106875C (es)
ES (1) ES280288A1 (es)
GB (1) GB1021083A (es)
NL (2) NL268692A (es)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2917654A1 (de) * 1979-05-02 1980-11-13 Ibm Deutschland Anordnung und verfahren zum selektiven, elektrochemischen aetzen
EP0018556B1 (de) * 1979-05-02 1984-08-08 International Business Machines Corporation Anordnung und Verfahren zum selektiven, elektrochemischen Ätzen
JPS6130038A (ja) * 1984-07-23 1986-02-12 Nec Corp エツチングの方法
CN115012003B (zh) * 2022-06-20 2024-02-06 中南大学 一种硫化锑矿熔盐电解连续化生产的方法及装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB810946A (en) * 1954-03-26 1959-03-25 Philco Corp Electrolytic shaping of semiconductive bodies
US2864006A (en) * 1956-07-06 1958-12-09 Gen Electric Cooling structure for semiconductor devices
US2982893A (en) * 1956-11-16 1961-05-02 Raytheon Co Electrical connections to semiconductor bodies
US3078219A (en) * 1958-11-03 1963-02-19 Westinghouse Electric Corp Surface treatment of silicon carbide
FR1223418A (fr) * 1959-01-07 1960-06-16 Dispositifs à semi-conducteur à deux bornes à résistance différentielle négative

Also Published As

Publication number Publication date
DE1464288B2 (de) 1972-06-22
BE621788A (es)
US3268781A (en) 1966-08-23
DK106875C (da) 1967-03-28
GB1021083A (en) 1966-02-23
NL268692A (es)
CH407333A (de) 1966-02-15
NL122951C (es)
AT239853B (de) 1965-04-26
DE1464288A1 (de) 1969-04-10

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