ES278662A1 - Procedure to form on a semiconductive substrate a semiconductive epitaxil film. (Machine-translation by Google Translate, not legally binding) - Google Patents

Procedure to form on a semiconductive substrate a semiconductive epitaxil film. (Machine-translation by Google Translate, not legally binding)

Info

Publication number
ES278662A1
ES278662A1 ES278662A ES278662A ES278662A1 ES 278662 A1 ES278662 A1 ES 278662A1 ES 278662 A ES278662 A ES 278662A ES 278662 A ES278662 A ES 278662A ES 278662 A1 ES278662 A1 ES 278662A1
Authority
ES
Spain
Prior art keywords
semiconductive
film
substrate
translation
machine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES278662A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Priority to ES278662A priority Critical patent/ES278662A1/en
Publication of ES278662A1 publication Critical patent/ES278662A1/en
Expired legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

Process for forming on a semiconductive substrate, a semiconductor epitaxial film, gallium arsenide or gallium phosphide; characterized in that a generating material, constituted essentially by the semiconductive compound that is to form the film, is heated in an atmosphere constituted in substance by a hydrogen halide in a gas or vapor state, and that film material is deposited on the surface of the substrate, maintaining a temperature difference between the substrate and the generator material. (Machine-translation by Google Translate, not legally binding)
ES278662A 1962-06-19 1962-06-19 Procedure to form on a semiconductive substrate a semiconductive epitaxil film. (Machine-translation by Google Translate, not legally binding) Expired ES278662A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
ES278662A ES278662A1 (en) 1962-06-19 1962-06-19 Procedure to form on a semiconductive substrate a semiconductive epitaxil film. (Machine-translation by Google Translate, not legally binding)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ES278662A ES278662A1 (en) 1962-06-19 1962-06-19 Procedure to form on a semiconductive substrate a semiconductive epitaxil film. (Machine-translation by Google Translate, not legally binding)

Publications (1)

Publication Number Publication Date
ES278662A1 true ES278662A1 (en) 1962-10-16

Family

ID=66650571

Family Applications (1)

Application Number Title Priority Date Filing Date
ES278662A Expired ES278662A1 (en) 1962-06-19 1962-06-19 Procedure to form on a semiconductive substrate a semiconductive epitaxil film. (Machine-translation by Google Translate, not legally binding)

Country Status (1)

Country Link
ES (1) ES278662A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020124278A1 (en) * 2018-12-21 2020-06-25 Oatech Spa Mobile offshore farm for the growth of hydrobiological species

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020124278A1 (en) * 2018-12-21 2020-06-25 Oatech Spa Mobile offshore farm for the growth of hydrobiological species

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