ES2443240B1 - Método para el dopado selectivo de un semiconductor mediante transferencia inducida por láser - Google Patents
Método para el dopado selectivo de un semiconductor mediante transferencia inducida por láser Download PDFInfo
- Publication number
- ES2443240B1 ES2443240B1 ES201231065A ES201231065A ES2443240B1 ES 2443240 B1 ES2443240 B1 ES 2443240B1 ES 201231065 A ES201231065 A ES 201231065A ES 201231065 A ES201231065 A ES 201231065A ES 2443240 B1 ES2443240 B1 ES 2443240B1
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- ES
- Spain
- Prior art keywords
- semiconductor
- substrate
- source
- doping
- transfer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000003667 anti-reflective effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000002243 precursor Substances 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Laser Beam Processing (AREA)
- Photovoltaic Devices (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Printing Plates And Materials Therefor (AREA)
- Electronic Switches (AREA)
Abstract
Método para el dopado selectivo de un semiconductor mediante transferencia inducida por láser, que comprende un sistema precursor (200) compuesto de al menos una capa absorbente (202) a la radiación láser, con una solución dopante (203) y un soporte transparente (201) , el cual se coloca enfrentado y en contacto directo con el sistema receptor (300) donde se integra el substrato (301) semiconductor y se irradia con uno o más pulsos de un haz láser (100) focalizados en la interfaz entre la fuente y el substrato, provocando la transferencia de material proveniente de la fuente hacia el substrato y la introducción de átomos dopantes provenientes de la fuente dentro del substrato semiconductor. El sustrato (301) es, preferentemente, una oblea de silicio con una cara frontal (302) y una cara posterior (303) con capas pasivante antirreflejo dieléctricas.
Description
Claims (1)
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imagen1 imagen2 imagen3 imagen4 imagen5 imagen6 imagen7 imagen8
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ES201231065A ES2443240B1 (es) | 2012-07-06 | 2012-07-06 | Método para el dopado selectivo de un semiconductor mediante transferencia inducida por láser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ES201231065A ES2443240B1 (es) | 2012-07-06 | 2012-07-06 | Método para el dopado selectivo de un semiconductor mediante transferencia inducida por láser |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| ES2443240A2 ES2443240A2 (es) | 2014-02-18 |
| ES2443240R1 ES2443240R1 (es) | 2014-07-03 |
| ES2443240B1 true ES2443240B1 (es) | 2015-06-02 |
Family
ID=50771351
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES201231065A Active ES2443240B1 (es) | 2012-07-06 | 2012-07-06 | Método para el dopado selectivo de un semiconductor mediante transferencia inducida por láser |
Country Status (1)
| Country | Link |
|---|---|
| ES (1) | ES2443240B1 (es) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5871826A (en) * | 1996-05-30 | 1999-02-16 | Xerox Corporation | Proximity laser doping technique for electronic materials |
| US8420435B2 (en) * | 2009-05-05 | 2013-04-16 | Solexel, Inc. | Ion implantation fabrication process for thin-film crystalline silicon solar cells |
| US7994021B2 (en) * | 2006-07-28 | 2011-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| US20100294349A1 (en) * | 2009-05-20 | 2010-11-25 | Uma Srinivasan | Back contact solar cells with effective and efficient designs and corresponding patterning processes |
-
2012
- 2012-07-06 ES ES201231065A patent/ES2443240B1/es active Active
Also Published As
| Publication number | Publication date |
|---|---|
| ES2443240A2 (es) | 2014-02-18 |
| ES2443240R1 (es) | 2014-07-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PC2A | Transfer of patent |
Owner name: UNIVERSIDAD POLITECNICA DE MADRID Effective date: 20120914 |
|
| FG2A | Definitive protection |
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