ES2339089A1 - Stable current generator (Machine-translation by Google Translate, not legally binding) - Google Patents
Stable current generator (Machine-translation by Google Translate, not legally binding) Download PDFInfo
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- ES2339089A1 ES2339089A1 ES200801573A ES200801573A ES2339089A1 ES 2339089 A1 ES2339089 A1 ES 2339089A1 ES 200801573 A ES200801573 A ES 200801573A ES 200801573 A ES200801573 A ES 200801573A ES 2339089 A1 ES2339089 A1 ES 2339089A1
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Nonlinear Science (AREA)
- Semiconductor Integrated Circuits (AREA)
- Control Of Electrical Variables (AREA)
- Amplifiers (AREA)
Abstract
Description
Generador de corriente estable.Stable current generator.
La presente invención pertenece al campo de los generadores de corriente, en concreto a los que ofrecen un comportamiento estable bajo diferentes condiciones de trabajo con un consumo reducido, proponiendo un generador que es capaz de proporcionar una corriente de salida estable pese a variaciones en la tensión de entrada.The present invention belongs to the field of current generators, specifically those that offer a stable behavior under different working conditions with a reduced consumption, proposing a generator that is capable of provide a stable output current despite variations in Input voltage
La tendencia actual en la electrónica de comunicaciones es el uso de dispositivos inalámbricos móviles basados en silicio, como pueden ser los sensores inalámbricos y los transpondedores RFID (identificaciones por Radiofrecuencia) dotados de un sensor.The current trend in electronics communications is the use of mobile wireless devices based on silicon, such as wireless sensors and RFID transponders (Radio Frequency Identifications) equipped of a sensor
La mayoría de estos dispositivos están formados
por circuitos integrados activos y circuitos integrados pasivos. Los
circuitos activos consumen energía alimentados por baterías, lo que
les confiere de disponibilidad de energía muy limitada. Los
circuitos pasivos, más económicos y ligeros, recogen y almacenan
temporalmente energía proveniente de una fuente radiante. En ambos
tipos de circuitos integrados se busca reducir los consumos al
mínimo. En los circuitos pasivos esta reducción es el factor que
marca el alcance del dispositivo inalámbrico en el cual está
integrado.Most of these devices consist of active integrated circuits and passive integrated circuits. Active circuits consume energy powered by batteries, which gives them very limited power availability. Passive circuits, cheaper and lighter, temporarily collect and store energy from a radiating source. In both types of integrated circuits, we seek to reduce consumption to a minimum. In passive circuits this reduction is the factor that marks the range of the wireless device in which it is
integrated.
Además, en el caso de los circuitos pasivos, la alimentación suele venir de una capacidad que suministra una tensión variable, por lo que la respuesta de los circuitos que se alimentan de ella debe de ser insensible a esta variación.In addition, in the case of passive circuits, the power usually comes from a capacity that supplies a voltage variable, so the response of the circuits that are fed of it must be insensitive to this variation.
Se ha observado, por otra parte, que la electrónica basada en silicio es sensible a las variaciones de la temperatura. Por ejemplo, en el caso de los transistores CMOS la corriente que los atraviesa es directamente proporcional a la temperatura.It has been observed, on the other hand, that the Silicon-based electronics are sensitive to variations in the temperature. For example, in the case of CMOS transistors the current that crosses them is directly proportional to the temperature.
Por otra parte se ha constatado que durante el proceso de fabricación de un circuito integrado, pueden ocurrir dispersiones debido a desviaciones naturales en los materiales, así como dispersiones debidas al entorno de trabajo y/o a la maquinaria que lo fabrica. Estas dispersiones pueden afectar al nivel de dopado de los semiconductores y/o a la anchura de cada una de las capas, afectando de esta forma al comportamiento de los transistores y por lo tanto del circuito.On the other hand it has been found that during the manufacturing process of an integrated circuit, may occur dispersions due to natural deviations in the materials as well as dispersions due to the work environment and / or machinery that manufactures it These dispersions can affect the level of doping of the semiconductors and / or the width of each of the layers, thus affecting the behavior of transistors and by So much of the circuit.
Sin embargo, el comportamiento de los dispositivos no debe depender de la temperatura, del proceso de fabricación ni de la tensión que lo alimenta; por lo que son necesarios circuitos insensibles a estos factores.However, the behavior of devices should not depend on the temperature, the process of manufacturing or the tension that feeds it; for what they are necessary circuits insensitive to these factors.
Los dos métodos principales que se pueden seguir para conseguir esto son: la insensibilidad uno a uno de todos los bloques electrónicos internos del dispositivo; o la sensibilidad controlada de bloques y su configuración de manera que estas sensibilidades se anulen las unas a las otras.The two main methods that can be followed to achieve this are: one-on-one insensitivity of all internal electronic blocks of the device; or sensitivity controlled block and its configuration so that these sensitivities cancel each other out.
En la presente invención, se presenta un generador de corriente que proporciona una corriente de salida constante con respecto a variaciones en la tensión de entrada y con una respuesta estable con respecto a variaciones en la temperatura y procesos fabricación. Así, se puede conseguir una corriente insensible o una sensibilidad concreta, pata insensibilizar bloques posteriores de diseño que sean alimentados por esta corriente.In the present invention, a current generator that provides an output current constant with respect to variations in the input voltage and with a stable response with respect to variations in temperature and manufacturing processes So, you can get a current insensitive or a specific sensitivity, to numb blocks design backs that are fed by this current.
De acuerdo con la invención se propone un generador de corriente que está formado por 3 bloques alimentados por una misma tensión (V_{DD}) y que sufren la misma dispersión del proceso de fabricación y la mima temperatura.According to the invention, a current generator consisting of 3 blocks powered by the same voltage (V_ {DD}) and suffering the same dispersion of the manufacturing process and the same temperature.
El funcionamiento se basa en que se genera una señal de voltaje en un primer bloque, que es dependiente del proceso y de la temperatura. Dicha señal controla una corriente de referencia generada en un segundo bloque. Esta corriente de referencia es utilizada para alimentar tantos circuitos como se requiera, mediante el copiado y amplificación de dicha corriente de referencia utilizando sucesivos espejos de corriente en un tercer bloque.The operation is based on the generation of a voltage signal in a first block, which is process dependent and of the temperature. This signal controls a current of reference generated in a second block. This stream of reference is used to power as many circuits as requires, by copying and amplifying said current of reference using successive power mirrors in a third block.
El primer bloque, dispone de un circuito start-up que arranca el sistema; una fuente de corriente de configuración cascodo y una resistencia por la que pasa la corriente obtenida, generando la señal de voltaje del primer bloque.The first block has a circuit start-up that starts the system; a source of hull configuration current and a resistance through which it passes the current obtained, generating the voltage signal of the first block.
En el segundo bloque, dicha señal del primer bloque polariza dos transistores, generando dos corrientes, que al ser restadas entre sí generan la corriente que se aplica al tercer bloque.In the second block, said signal from the first block polarizes two transistors, generating two currents, which at being subtracted from each other generate the current that is applied to the third block.
En el tercer bloque, la corriente que se aplica es amplificada para su adaptación al tipo de circuito y al número de circuitos que va a alimentar. Esto se consigue mediante sucesivos espejos de corriente, que dan lugar a corrientes de salida o entrada.In the third block, the current that is applied it is amplified for adaptation to the type of circuit and the number of circuits that will feed. This is achieved by successive power mirrors, which give rise to output currents or entry.
El bajo consumo que se obtiene en el conjunto de los bloques permite su aplicación en transpondedores RFID, o con mayor generalidad, en sensores inalámbricos.The low consumption obtained in the set of The blocks allow their application in RFID transponders, or with greater generality, in wireless sensors.
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La figura 1 representa el diagrama de bloques del generador de corriente objeto de la invención.Figure 1 represents the block diagram of the current generator object of the invention.
La figura 2 representa la arquitectura general del generador preconizado, con las interconexiones entre los bloque componentes.Figure 2 represents the general architecture of the recommended generator, with the interconnections between the blocks components.
La figura 3 representa la arquitectura del primer bloque del generador.Figure 3 represents the architecture of the First block of the generator.
La figura 4 representa la arquitectura del segundo bloque del generador.Figure 4 represents the architecture of the Second block of the generator.
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El objeto de la invención se refiere a un generador de corriente, según el diagrama de bloques representado en la figura 1, y el esquema eléctrico de la figura 2, en donde un primer bloque (1000) genera un voltaje (V_{CTRL}) independiente de la tensión de alimentación (V_{DD}) con una respuesta estable con las variaciones temperatura y procesos de fabricación. Este voltaje controla la corriente de salida (I_{REF}) de un segundo bloque (2000) que luego es amplificada y adaptada al tipo de fuente de corriente que queramos (donadora o receptora) mediante tantos espejos de corriente como sean necesarios para la cantidad de salidas necesarias en un tercer bloque (3000).The object of the invention relates to a current generator, according to the block diagram represented in Figure 1, and the electrical scheme of Figure 2, wherein a first block (1000) generates a voltage (V_ {CTRL}) independent of the supply voltage (V_ {DD}) with a stable response with Temperature variations and manufacturing processes. This voltage controls the output current (I_ {REF}) of a second block (2000) which is then amplified and adapted to the type of source of current we want (donor or recipient) through so many power mirrors as necessary for the amount of necessary outputs in a third block (3000).
La figura 3 representa la arquitectura del primer bloque (1000), que comprende un sub-bloque (1100) y un sub-bloque (1200), en donde el sub-bloque (1100) es un start-up que inicia el circuito y que evita que el circuito caiga en un punto de degeneración; mientras que el sub-bloque (1200) incluye una fuente de corriente de configuración cascodo (1201) y una resistencia (R_{3}) que convierte la corriente de este primer bloque (1000) en el voltaje (V_{CTRL}).Figure 3 represents the architecture of the first block (1000), which comprises a sub-block (1100) and a sub-block (1200), where the sub-block (1100) is a start-up that starts the circuit and prevents the circuit from falling at a point of degeneration; while the sub-block (1200) includes a hull configuration current source (1201) and a resistor (R 3) that converts the current of this first block (1000) in the voltage (V_ {CTRL}).
Mediante la fuente de corriente (1201), se obtiene una misma corriente (I_{1}), (I_{2}) e (I_{3}), por las ramas de las resistencias (R_{1}) y (R_{3}) y por la rama del transistor (1202). Esta corriente es independiente de (V_{DD}) y de la resistencia (R_{3}), pero dependiente del proceso y de la temperatura. A su vez, la resistencia (R_{3}) es dependiente de la temperatura y del proceso de fabricación por lo que la dependencia del voltaje (V_{CTRL}) (producto de (I3) y la resistencia (R_{3})) con respecto a la temperatura y el proceso, dependerá de la dependencia que presentan (I_{3}) y (R_{3}). Una señal (V_{CTRL}) con una dependencia concreta con respecto a la temperatura y al proceso de fabricación es necesaria para conseguir la corriente (I_{REF}) objetivo en el segundo bloque (2000).By means of the current source (1201), obtains the same current (I_ {1}), (I_ {2}) and (I_ {3}), by the branches of the resistors (R_ {1}) and (R_ {3}) and by the branch of the transistor (1202). This current is independent of (V_ {DD}) and resistance (R_ {3}), but dependent on the process and the temperature. In turn, the resistance (R 3) is dependent on the temperature and manufacturing process so the dependence of voltage (V_ {CTRL}) (product of (I3) and resistance (R_ {3}) with respect to temperature and process, will depend on the dependence presented by (I 3) and (R 3). A signal (V_ {CTRL}) with a specific dependency on the temperature and the manufacturing process is necessary to get the target current (I_ {REF}) in the second block (2000).
Los principales elementos a modificar para obtener la dependencia del voltaje (V_{CTRL}) deseada y su efecto sobre la corriente (I_{REF}) se resumen en La siguiente tabla:The main elements to modify for get the dependence of the desired voltage (V_ {CTRL}) and its effect over current (I_ {REF}) are summarized in The following table:
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La dependencia con respecto a las variaciones en proceso se pueden ajustar variando el ancho de las resistencias (R_{1}) y (R_{3}) y variando la W (anchura del canal) y la L (longitud del canal) de los transistores (1204) y (1202).Dependence with respect to variations in process can be adjusted by varying the width of the resistors (R1) and (R3) and varying the W (channel width) and the L (channel length) of transistors (1204) and (1202).
La Figura 4 representa la arquitectura del segundo bloque (2000) que transforma el voltaje de control (V_{CTRL}) en la corriente de salida (I_{REF}) Y que en algunos casos compensa parte del proceso.Figure 4 represents the architecture of the second block (2000) that transforms the control voltage (V_ {CTRL}) in the output current (I_ {REF}) And that in some cases compensates part of the process.
\newpage\ newpage
La señal (V_{CTRL}) que proviene del primer bloque (1000) polariza los transistores (M_{1}) y (M_{2}), generando las corrientes (I_{4}) e (I_{5}), de las cuales (I_{4}) está definida por la señal (V_{CTRL}), el transistor (M_{1}) y la resistencia (R_{4}); mientras que la corriente (I_{5}) está definida por la señal (V_{CTRL}), el transistor (M_{2}) y la resistencia (R_{5}).The signal (V_ {CTRL}) that comes from the first block (1000) polarizes transistors (M1) and (M2), generating the currents (I_ {4}) and (I_ {5}), of which (I_ {4}) is defined by the signal (V_ {CTRL}), the transistor (M1) and resistance (R4); while the current (I_ {5}) is defined by the signal (V_ {CTRL}), the transistor (M 2) and resistance (R 5).
La W de los transistores de (2106) es dos veces mayor que la W de los transistores (2105), por lo que:The W of the transistors of (2106) is twice greater than the W of the transistors (2105), so:
Además:Further:
Y por lo tanto:And therefore:
La resta que se realiza entre estas dos corrientes (I_{7}) e (I_{5}) para obtener la intensidad (I_{REF}) permite realizar en este punto un ajuste de las dispersiones en fabricación o en temperatura aprovechando el diferente efecto que tendrán estas variables sobre las corrientes (I_{4}) e (I_{5}). La corriente de salida (I_{REF}) será constante cuando se cumpla:The subtraction that is done between these two currents (I_ {7}) and (I_ {5}) to obtain the intensity (I_ {REF}) allows you to make an adjustment of the manufacturing or temperature dispersions taking advantage of the different effect that these variables will have on the currents (I_ {4}) and (I_ {5}). The output current (I_ {REF}) will be constant when it is met:
El ajuste deseado se consigue variando el ancho de canal W y la longitud de canal L de los transistores (M_{1}) y (M_{2}) o el tipo, valor nominal o anchura de las resistencias (R_{4}) y (R_{5}).The desired setting is achieved by varying the width of channel W and the length of channel L of the transistors (M_ {1}) and (M_ {2}) or the type, nominal value or width of the resistors (R 4) and (R 5).
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ES200801573A ES2339089B1 (en) | 2008-05-27 | 2008-05-27 | STABLE CURRENT GENERATOR. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ES200801573A ES2339089B1 (en) | 2008-05-27 | 2008-05-27 | STABLE CURRENT GENERATOR. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| ES2339089A1 true ES2339089A1 (en) | 2010-05-14 |
| ES2339089B1 ES2339089B1 (en) | 2011-04-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES200801573A Expired - Fee Related ES2339089B1 (en) | 2008-05-27 | 2008-05-27 | STABLE CURRENT GENERATOR. |
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| Country | Link |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6525598B1 (en) * | 1999-01-29 | 2003-02-25 | Cirrus Logic, Incorporated | Bias start up circuit and method |
| US20060071703A1 (en) * | 2004-08-20 | 2006-04-06 | Stmicroelectronics Pvt. Ltd. | On-chip voltage regulator |
| US20060103455A1 (en) * | 2004-11-15 | 2006-05-18 | Samsung Electronics Co., Ltd. | Resistorless bias current generation circuit |
| EP1667004A2 (en) * | 2004-11-25 | 2006-06-07 | STMicroelectronics Pvt. Ltd | Temperature compensated reference current generator |
-
2008
- 2008-05-27 ES ES200801573A patent/ES2339089B1/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6525598B1 (en) * | 1999-01-29 | 2003-02-25 | Cirrus Logic, Incorporated | Bias start up circuit and method |
| US20060071703A1 (en) * | 2004-08-20 | 2006-04-06 | Stmicroelectronics Pvt. Ltd. | On-chip voltage regulator |
| US20060103455A1 (en) * | 2004-11-15 | 2006-05-18 | Samsung Electronics Co., Ltd. | Resistorless bias current generation circuit |
| EP1667004A2 (en) * | 2004-11-25 | 2006-06-07 | STMicroelectronics Pvt. Ltd | Temperature compensated reference current generator |
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| Publication number | Publication date |
|---|---|
| ES2339089B1 (en) | 2011-04-04 |
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