ES2333291A1 - Method for obtaining phase diffraction gratings in a substrate by laser ablation of a target - Google Patents
Method for obtaining phase diffraction gratings in a substrate by laser ablation of a target Download PDFInfo
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- ES2333291A1 ES2333291A1 ES200703475A ES200703475A ES2333291A1 ES 2333291 A1 ES2333291 A1 ES 2333291A1 ES 200703475 A ES200703475 A ES 200703475A ES 200703475 A ES200703475 A ES 200703475A ES 2333291 A1 ES2333291 A1 ES 2333291A1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/048—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
- G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
Abstract
Description
Procedimiento de obtención de redes de difracción de fase en un sustrato mediante ablación láser de un blanco.Procedure for obtaining networks of phase diffraction in a substrate by laser ablation of a White.
La presente invención pertenece al campo de los métodos empleados para la fabricación de redes de difracción de fase. Más concretamente, la presente invención emplea la ablación láser de un blanco para crear dicha red de difracción de fase sobre un sustrato.The present invention belongs to the field of methods used to manufacture diffraction networks of phase. More specifically, the present invention employs ablation laser of a target to create said phase diffraction network over a substrate
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En la actualidad existen diferentes métodos para la fabricación de redes de difracción de fase. En términos generales, los documentos E.G. Loewen and E. Popov, Diffraction Gratings and Applications (Marcel Dekker, New York, 1997) y C. Palmer, Diffraction Grating Handbook, 5th ed. describen los conceptos básicos de las redes de difracción de fase y los principales métodos de fabricación.There are currently different methods for the manufacture of phase diffraction networks. In terms general documents E.G. Loewen and E. Popov, Diffraction Gratings and Applications (Marcel Dekker, New York, 1997) and C. Palmer, Diffraction Grating Handbook, 5th ed. describe the basics of phase diffraction networks and Main manufacturing methods.
Uno de estos métodos es la holografía. Dicha técnica está descrita en T.J. Suleski, B. Bagget, W.F. Delaney, C. Koehler and E.G. Johnson, "Fabrication of high-spatial-frequency gratings through computer-generated near-field holography", Opt. Lett. 24, 602-604 (1999). Esta técnica presenta una serie de desventajas, entre las que se pueden citar el hecho de que se necesita una configuración altamente estable para la realización con éxito del proceso como mesas sin vibración, estabilidad del láser, material de registro de buena calidad. Por otro lado, es un método poco flexible a la hora de grabar distintos tipos de redes ya que hay que cambiar toda la configuración experimental para grabar una red de otras características.One of these methods is holography. Bliss technique is described in T.J. Suleski, B. Bagget, W.F. Delaney, C. Koehler and E.G. Johnson, "Fabrication of high-spatial-frequency gratings through computer-generated near-field holography ", Opt. Lett. 24, 602-604 (1999). This technique presents a series of disadvantages, among which we can mention the fact that you need a highly stable configuration for realization with Success of the process such as tables without vibration, laser stability, Good quality record material. On the other hand, it is a method not very flexible when recording different types of networks since you have to change all the experimental settings to record a network of other characteristics.
La técnica de la fotolitografía puede también ser empleada para la elaboración de redes de difracción de fase. Dicha técnica se describe en M. Kufner and S. Kufner, "Micro-Optics and Lithography", VUB Press, ed. (Brussels, Belgium, 1997). Esta técnica se caracteriza porque es un proceso de múltiples etapas, lo que aumenta el tiempo de fabricación. Adicionalmente es necesario utilizar máscaras, resinas, productos químicos, etc. para la obtención del producto final, lo que encarece el proceso. Además, los errores de fabricación de la máscara afectan la calidad del producto final. Asimismo, las máscaras utilizadas se suelen ver dañadas después del contacto con la resina.The photolithography technique can also be used for the development of phase diffraction networks. This technique is described in M. Kufner and S. Kufner, "Micro-Optics and Lithography", VUB Press, ed. (Brussels, Belgium, 1997). This technique is characterized because it is a multi-stage process, which increases the time of manufacturing. Additionally it is necessary to use masks, resins, chemical products, etc. to obtain the final product, what That makes the process more expensive. In addition, manufacturing errors of the Mask affect the quality of the final product. Also, the Used masks are usually damaged after contact with the resin
La litografía por haz de electrones, divulgada en R. Waldhäusl, B. Schnabel, P. Dannberg, E.-B. Kley, A. Bräuer and W. Karthe, "Efficient coupling into polymer waveguides by gratings", Appl. Opt. 36, 9383-9390 (1997), puede ser empleada también con el mismo fin. Sin embargo, como se dice en K. Arshak, M. Mihov, A. Arshak, D. McDonagh and D. Sutton, "Novel dry-developed focused ion beam lithography scheme for nanostructure applications", Microelectron. Eng. 73-74, 144-151 (2004), presenta algunos problemas como baja sensibilidad de la resina a los electrones, retrodispersión del haz de electrones, efectos de proximidad, errores de stitching (punteado), así como un área pequeña de trabajo, de unos pocos milímetros, 1 mm x 2 mm.Electron beam lithography, disclosed in R. Waldhäusl, B. Schnabel, P. Dannberg, E.-B. Kley, A. Bräuer and W. Karthe, "Efficient coupling into polymer waveguides by gratings ", Appl. Opt. 36, 9383-9390 (1997), may be also used for the same purpose. However, as stated in K. Arshak, M. Mihov, A. Arshak, D. McDonagh and D. Sutton, "Novel dry-developed focused ion beam lithography scheme for nanostructure applications ", Microelectron. Eng. 73-74, 144-151 (2004), presents some problems such as low resin sensitivity to electrons, electron beam backscatter, effects of proximity, stitching errors (dotted), as well as an area Small work, a few millimeters, 1 mm x 2 mm.
Por último, la irradiación láser de vidrios fotosensibles, descrita en K.O. Hill, B. Malo, F. Bilodeau, D.C. Johnson and J. Albert, "Bragg gratings fabricated in monomode photosensitive optical fiber by UV exposure through a phase mask", Appl. Phys. Lett. 62, 1035-1037 (1993), se emplea también para la elaboración de redes de difracción de fase. Esta técnica necesita vidrios de composición especial, lo cual encarece sensiblemente el producto final. Requiere también la presencia de una máscara de fase para transferir el patrón al sustrato. Puede, finalmente, involucrar complejos procesos de deposición de capas o intercambio iónico, si se utilizan sustratos sin composición especial, de modo que el sustrato se vuelva sensible a la luz.Finally, laser irradiation of glasses photosensitive, described in K.O. Hill, B. Malo, F. Bilodeau, D.C. Johnson and J. Albert, "Bragg gratings fabricated in monomode photosensitive optical fiber by UV exposure through a phase mask ", Appl. Phys. Lett. 62, 1035-1037 (1993), se also used for the development of phase diffraction networks. This technique needs special composition glasses, which the final product becomes more expensive. It also requires the presence of a phase mask to transfer the pattern to substratum. It can, finally, involve complex processes of layer deposition or ion exchange, if substrates are used no special composition, so that the substrate becomes sensitive to the light.
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La invención se refiere a un procedimiento de obtención de redes de difracción de fase en un sustrato mediante ablación láser de un blanco. El patrón de la red de difracción de fase se define usando medios informáticos, como puede ser, por ejemplo, un programa de diseño asistido por ordenador como CAD.The invention relates to a method of obtaining phase diffraction networks in a substrate by Laser ablation of a target. The diffraction network pattern of phase is defined using computer means, as it can be, by For example, a computer-aided design program such as CAD.
De acuerdo con la invención, dicho procedimiento comprende las etapas de, en primer lugar, focalizar un haz de un láser en un blanco en un área de trabajo para la ablación de dicho blanco. Dicho blanco podrá estar formado por materiales cerámicos o metálicos, como por ejemplo el latón o el acero. Al producirse la ablación, la pluma de ablación hará que se incorpore material del blanco al sustrato formando la red de difracción de fase. Dicho sustrato deberá ser transparente a la longitud de onda empleada por el láser, pudiendo ser un vidrio, preferentemente vidrios sodo-cálcicos o borosilicatados.According to the invention, said procedure it comprises the stages of first focusing a beam of a laser on a target in a work area for the ablation of said White. Said target may be formed by ceramic materials or metallic, such as brass or steel. When the ablation, the ablation pen will cause material to be incorporated target to the substrate forming the phase diffraction network. Saying substrate must be transparent to the wavelength used by the laser, being able to be a glass, preferably glasses sodo-calcium or borosilicate.
El procedimiento podrá llevarse a cabo en atmósferas no controladas, es decir, en aire, o bien en cámaras de vacío o con una atmósfera controlada. En el primer caso el sustrato y el blanco deberán estar en contacto o situarse a una distancia no superior a un milímetro, dado que el alcance de la pluma de ablación no supera dicha distancia. En el caso de cámaras de vacío o con atmósfera controlada, la pluma de ablación es más intensa y de mayor alcance, por lo que la distancia entre sustrato y blanco puede ser mayor al límite fijado anteriormente de un milímetro.The procedure may be carried out in uncontrolled atmospheres, that is, in air, or in chambers of empty or with a controlled atmosphere. In the first case the substrate and the target must be in contact or placed at a distance not greater than one millimeter, since the scope of the ablation pen does not exceed that distance. In the case of vacuum chambers or with controlled atmosphere, the ablation pen is more intense and of greater range, so the distance between substrate and white can be greater than the previously set limit of one millimeter.
El láser está situado en una posición fija, por lo que para realizar el patrón definido por los medios informáticos, dichos medios deberán transferir a un equipo de orientación el movimiento que deberá realizar el haz para dibujar el patrón de red de difracción de fase sobre el blanco. Esto se podrá realizar, por ejemplo, empleando un juego de galvanómetros o espejos que desviarán el haz haciéndolo incidir sobre el sustrato según el patrón definido.The laser is located in a fixed position, for what to perform the pattern defined by the computer media, these means must transfer to an orientation team the movement to be done by the beam to draw the net pattern phase diffraction on the target. This can be done, by example, using a set of galvanometers or mirrors that they will deflect the beam making it affect the substrate according to the defined pattern.
El láser en el momento que es emitido tiene una distribución de potencia homogénea en cualquier sección perpendicular a dicho haz. Al ser orientado, puede suceder que la distribución de potencia se vea afectada, lo cual no es deseable. Por este motivo, será necesario homogeneizar el haz para lograr una densidad de potencia homogénea en el área de trabajo. Esto podrá ser realizado, por ejemplo, empleando una lente de campo plano tras el juego de galvanómetros o espejos.The laser at the time it is emitted has a homogeneous power distribution in any section perpendicular to said beam. Being oriented, it may happen that the Power distribution is affected, which is not desirable. For this reason, it will be necessary to homogenize the beam to achieve homogeneous power density in the work area. This may be performed, for example, using a flat field lens after the set of galvanometers or mirrors.
La configuración en el espacio del blanco y el sustrato, con relación al haz láser puede ser, por ejemplo, vertical. En este caso, se podrán disponer los tres elementos de modo que el blanco esté situado por debajo del sustrato, y a su vez, el sustrato por debajo del haz del láser. Esta configuración es óptima dado que de este modo la gravedad no afectará negativamente sobre la pluma de ablación. Sin embargo, situaciones en las cuales los tres elementos tengan una disposición horizontal son también admisibles.The settings in the white space and the substrate, in relation to the laser beam can be, for example, vertical. In this case, the three elements of so that the target is located below the substrate, and at its Once, the substrate below the laser beam. This setting is optimal since gravity will not adversely affect on the pen of ablation. However, situations in which the three elements have a horizontal layout are also admissible
El procedimiento descrito tiene las siguientes ventajas respecto a los procedimientos del estado de la técnica. En primer lugar, es un proceso de una sola etapa. Una vez que el patrón está definido, la red de difracción de fase puede ser realizada sin necesidad de llevar a cabo ninguna tarea adicional anterior o posterior a la descrita. Del mismo modo, no hace falta la presencia de elementos externos como máscaras o resinas. Esto minimiza los errores de la técnica. La configuración experimental es sencilla y precisa y el proceso de fabricación muy rápido. Adicionalmente, es posible obtener redes de difracción de diferentes características de forma sencilla, reajustando los parámetros de trabajo, y con un área de trabajo de hasta 120 x 120 mm^{2}. Frente a otros métodos, en este caso se desplaza el haz y no la muestra. Por último, se utilizan vidrios comerciales de bajo coste, por lo que se obtienen un producto de buena calidad y barato. La calidad de estas redes de difracción de fase es sensiblemente superior a otras redes obtenidas por procedimientos del estado de la técnica ya que estos métodos posibilitan una variación del índice de refracción del sustrato del orden de 10^{-4}, mientras que el procedimiento descrito en la presente invención obtiene variaciones en dicho parámetro del orden de 10^{-2}.The procedure described has the following advantages over prior art procedures. In First, it is a single stage process. Once the pattern is defined, the phase diffraction network can be performed without need to perform any previous additional tasks or after the described one. Similarly, the presence is not necessary of external elements such as masks or resins. This minimizes the technique errors. The experimental setup is simple and Accurate and the manufacturing process very fast. Additionally, it is possible to obtain diffraction networks of different characteristics of simple way, resetting the work parameters, and with a work area up to 120 x 120 mm2. In front of others methods, in this case the beam is displaced and not the sample. By Lastly, low-cost commercial glasses are used, so You get a good quality and cheap product. The quality of these phase diffraction networks are significantly superior to others networks obtained by prior art procedures since these methods allow a variation of the refractive index of the substrate of the order of 10-4, while the procedure described in the present invention obtains variations in said parameter of the order of 10-2.
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Para complementar la descripción que se está realizando y con objeto de ayudar a una mejor comprensión de las características de la invención, se acompaña como parte integrante de dicha descripción, un juego de dibujos en donde con carácter ilustrativo y no limitativo, se ha representado lo siguiente:To complement the description that is being performing and in order to help a better understanding of the characteristics of the invention, it is accompanied as an integral part of said description, a set of drawings where with character Illustrative and not limiting, the following has been represented:
Figura 1.- Muestra una vista general de un dispositivo que lleva a cabo el procedimiento de la invención.Figure 1.- Shows an overview of a device carrying out the process of the invention.
Figura 2.- Muestra una vista de detalle del blanco y el sustrato junto con la lente de campo plano que homogeneiza la energía del láser.Figure 2.- Shows a detailed view of the white and the substrate along with the flat field lens that homogenizes the laser energy.
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A continuación, con referencia a las figuras, se describe un modo de realización preferente del procedimiento de obtención de redes de difracción de fase en un sustrato (2) mediante ablación láser de un blanco (1) que constituye el objeto de esta invención.Next, with reference to the figures, describes a preferred embodiment of the process of obtaining phase diffraction networks in a substrate (2) by laser ablation of a target (1) that is the object of this invention.
La figura 1 muestra esquemáticamente los elementos que llevan a cabo el procedimiento de la invención, no estando representados únicamente los medios informáticos en los que se definen los patrones de redes de difracción de fase. En ellos, y con una herramienta como por ejemplo CAD, se definen los distintos patrones que deben realizarse.Figure 1 schematically shows the elements that carry out the process of the invention, not being represented only the computer means in which phase diffraction network patterns are defined. In them, and with a tool such as CAD, you define the different patterns to be performed.
El procedimiento se basa en la ablación láser de un blanco (1). En la figura 1 está representado dicho láser (4) que emite un haz (3) con un determinado diámetro, frecuencia de repetición, anchura de pulso y densidad de potencia. Dicho láser (4) está situado fijo, por lo que para grabar la red de difracción de fase sobre el sustrato (2) se emplea un juego de galvanómetros (5). Dichos galvanómetros (5) son movidos o controlados por los medios informáticos, de tal modo que en su movimiento irán desplazando el haz (3) del láser (4) para crear el patrón definido en el sustrato (2). La velocidad de los galvanómetros (5), junto con los parámetros antes mencionados para el láser (4) de diámetro, frecuencia de repetición, anchura de pulso y densidad de potencia son las condiciones de trabajo que se deben definir para llevar a cabo la red de difracción de fase sobre un sustrato (2). Dichas condiciones de trabajo serán diferentes para cada par sustrato (2)-blanco (1).The procedure is based on laser ablation of a white (1). Figure 1 shows said laser (4) that emits a beam (3) with a certain diameter, frequency of repetition, pulse width and power density. Said laser (4) is fixed, so to record the diffraction network phase on the substrate (2) a set of galvanometers is used (5). Said galvanometers (5) are moved or controlled by the computer media, so that in their movement they will go moving the laser beam (3) (4) to create the defined pattern in the substrate (2). The speed of the galvanometers (5), together with The aforementioned parameters for the laser (4) in diameter, repetition frequency, pulse width and power density are the working conditions that must be defined to lead to out the phase diffraction network on a substrate (2). These working conditions will be different for each substrate pair (2) -white (1).
Al ser el haz (3) del láser (4) manipulado, puede darse la circunstancia de que la densidad de potencia del haz (3) no sea uniforme. Dada la exigencia de dicha uniformidad, se emplea una lente de campo plano (6) tras el juego de galvanómetros (5) para homogeneizar el haz (3), garantizando una densidad de potencia homogénea en la superficie del blanco (1) donde actuará el haz (3). Dicha densidad de potencia ha de ser capaz de provocar la ablación del blanco (1) sin afectar negativamente sobre el sustrato (2).Being the beam (3) of the laser (4) manipulated, it may be the case that the power density of the beam (3) don't be uniform. Given the requirement of such uniformity, use a flat-field lens (6) after the galvanometer set (5) to homogenize the beam (3), guaranteeing a density of homogeneous power on the surface of the target (1) where the do (3). Said power density must be capable of causing target ablation (1) without negatively affecting the substrate (2).
El sustrato (2) empleado en la presente invención puede ser vidrio comercial. Este sustrato (2) deberá ser transparente a la longitud de onda en la cual emite el láser (4), dado que el haz (3) atravesará el sustrato (2) para después producir la ablación sobre el blanco (1).The substrate (2) used herein Invention may be commercial glass. This substrate (2) must be transparent to the wavelength at which the laser emits (4), since the beam (3) will pass through the substrate (2) for later produce the ablation on the target (1).
El blanco (1) en este caso será un metal, por ejemplo latón o acero. Mediante la ablación se provoca que, a través de la pluma de ablación, iones del blanco (1) pasen a incorporarse al sustrato (2), vidrio en este caso. Estos iones modificarán la composición de las zonas deseadas del sustrato (2), y en consecuencia su índice de refracción en dichas zonas, formándose la red de difracción de fase. Para que esta transferencia de iones se produzca, el blanco (1) y el sustrato (2) han de situarse próximos entre sí, nunca superando una distancia de un milímetro. En la presente realización, el sustrato (2) y el blanco (1) están en contacto. Si el proceso se realizara en cámara de vacío o de atmósfera controlada, el sustrato (2) y el blanco (1) podrán estar alejados una distancia superior al límite fijado anterior de un milímetro. Tras haber grabado la red de difracción de fase deberá procederse a una limpieza del sustrato (2) con el fin de eliminar cualquier resto de la ablación depositado sobre su superficie.The target (1) in this case will be a metal, for example brass or steel. By ablation it is caused that, at through the ablation pen, white ions (1) pass to be incorporated into the substrate (2), glass in this case. These ions modify the composition of the desired areas of the substrate (2), and consequently its refractive index in these areas, forming the phase diffraction network. For this ion transfer is produced, the target (1) and the substrate (2) must be placed next to each other, never exceeding a distance of one millimeter. In the present embodiment, the substrate (2) and the blank (1) are in Contact. If the process is carried out in a vacuum chamber or controlled atmosphere, the substrate (2) and the blank (1) may be away a distance greater than the previous set limit of a millimeter. After recording the phase diffraction network, you must proceed to clean the substrate (2) in order to remove any rest of the ablation deposited on its surface.
A la vista de esta descripción y juego de figuras, el experto en la materia podrá entender que la invención ha sido descrita según una realización preferente de la misma, pero que múltiples variaciones pueden ser introducidas en dicha realización preferente, sin salir del objeto de la invención tal y como ha sido reivindicada.In view of this description and game of figures, the person skilled in the art will understand that the invention has been described according to a preferred embodiment thereof, but that multiple variations can be introduced in said preferred embodiment, without leaving the object of the invention as and as claimed.
Claims (16)
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- focalizar un haz (3) de un láser (4) en un blanco (1) en un área de trabajo para la ablación de dicho blanco (1),focus a beam (3) of a laser (4) on a target (1) in a work area for the ablation of said target (one),
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- orientar el haz (3) para dibujar el patrón de red de difracción de fase sobre el sustrato (2),orient the beam (3) to draw the phase diffraction network pattern on the substrate (2),
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- homogeneizar el haz (3) para lograr una densidad de potencia homogénea en el área de trabajo.homogenize the beam (3) to achieve a homogeneous power density in the work area.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ES200703475A ES2333291B1 (en) | 2007-12-28 | 2007-12-28 | PROCEDURE FOR OBTAINING PHASE DIFFACTION NETWORKS IN A SUBSTRATE BY LASER ABLATION OF A WHITE. |
| PCT/ES2008/070241 WO2009083631A1 (en) | 2007-12-28 | 2008-12-23 | Method for obtaining phase diffraction gratings in a substrate by laser ablation of a target |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ES200703475A ES2333291B1 (en) | 2007-12-28 | 2007-12-28 | PROCEDURE FOR OBTAINING PHASE DIFFACTION NETWORKS IN A SUBSTRATE BY LASER ABLATION OF A WHITE. |
Publications (2)
| Publication Number | Publication Date |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| RU2626734C1 (en) * | 2016-08-04 | 2017-07-31 | федеральное государственное автономное образовательное учреждение высшего образования "Санкт-Петербургский национальный исследовательский университет информационных технологий, механики и оптики" (Университет ИТМО) | Method of manufacturing one-dimensional diffraction phase grating with sinusoidal profile |
| RU2687516C1 (en) * | 2018-02-26 | 2019-05-14 | Акционерное общество "Научно-производственное объединение "Государственный институт прикладной оптики" (АО "НПО ГИПО") | Pendulum ruling machine for production of dashed structures on non-flat working surfaces |
| RU185038U1 (en) * | 2018-02-26 | 2018-11-19 | Акционерное общество "Научно-производственное объединение "Государственный институт прикладной оптики" (АО "НПО ГИПО") | Pendulum dividing machine for forming dashed structures on non-planar working surfaces |
| RU2691821C1 (en) * | 2018-02-26 | 2019-06-18 | Акционерное общество "Научно-производственное объединение "Государственный институт прикладной оптики" (АО "НПО ГИПО") | Pendulum-type dividing machine for making dashed structures on non-planar working surfaces |
| RU185039U1 (en) * | 2018-02-26 | 2018-11-19 | Акционерное общество "Научно-производственное объединение "Государственный институт прикладной оптики" (АО "НПО ГИПО") | Pendulum dividing machine for the manufacture of line structures on non-planar working surfaces |
| RU185040U1 (en) * | 2018-02-27 | 2018-11-19 | Акционерное общество "Научно-производственное объединение "Государственный институт прикладной оптики" (АО "НПО ГИПО") | DIVISION MACHINE OF PENDULUM TYPE FOR FORMATION OF HATCH STRUCTURES ON CONVEX CYLINDRICAL SURFACES |
| RU2687515C1 (en) * | 2018-02-27 | 2019-05-14 | Акционерное общество "Научно-производственное объединение "Государственный институт прикладной оптики" (АО "НПО ГИПО") | Pendulum-type ruling machine for forming line structures on convex cylindrical surfaces |
| RU2687514C1 (en) * | 2018-02-27 | 2019-05-14 | Акционерное общество "Научно-производственное объединение "Государственный институт прикладной оптики" (АО "НПО ГИПО") | Pendulum-type ruling machine for forming line structures on convex cylindrical surfaces |
| RU185041U1 (en) * | 2018-02-27 | 2018-11-19 | Акционерное общество "Научно-производственное объединение "Государственный институт прикладной оптики" (АО "НПО ГИПО") | DIVISION MACHINE OF PENDULUM TYPE FOR MANUFACTURE OF HATCH STRUCTURES ON CONVEX CYLINDRICAL SURFACES |
| RU2725324C1 (en) * | 2019-05-31 | 2020-07-02 | Акционерное общество "Научно-производственное объединение "Государственный институт прикладной оптики" (АО "НПО ГИПО") | Pendulum-type dividing machine for making dashed structures on concave surfaces |
| RU2725321C1 (en) * | 2019-05-31 | 2020-07-02 | Акционерное общество "Научно-производственное объединение "Государственный институт прикладной оптики" (АО "НПО ГИПО") | Pendulum-type dividing machine for forming dashed structures on concave surfaces |
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| WO2007101895A1 (en) * | 2006-03-09 | 2007-09-13 | Universidad De Cádiz | Method and apparatus for manufacturing purely refractive optical structrues |
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- 2007-12-28 ES ES200703475A patent/ES2333291B1/en active Active
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| GB2316497A (en) * | 1996-08-13 | 1998-02-25 | Northern Telecom Ltd | Forming a diffraction grating by scanning |
| JPH11170072A (en) * | 1997-09-02 | 1999-06-29 | Seiko Epson Corp | Method and device for laser beam machining and for forming circuit of nonconductive transparent substrate |
| JPH1177341A (en) * | 1997-09-10 | 1999-03-23 | Miyachi Technos Corp | Transfer plate for laser marking |
| JP2002160079A (en) * | 2000-11-30 | 2002-06-04 | Laser Gijutsu Sogo Kenkyusho | Method and device for ablation working of thin film |
| US20060219676A1 (en) * | 2005-03-25 | 2006-10-05 | National Research Council Of Canada | Fabrication of long range periodic nanostructures in transparent or semitransparent dielectrics |
| WO2007101895A1 (en) * | 2006-03-09 | 2007-09-13 | Universidad De Cádiz | Method and apparatus for manufacturing purely refractive optical structrues |
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| WO2009083631A1 (en) | 2009-07-09 |
| ES2333291B1 (en) | 2011-05-27 |
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