ES2184140T3 - Sensor de imagen de color para una exposicion a corto plazo. - Google Patents
Sensor de imagen de color para una exposicion a corto plazo.Info
- Publication number
- ES2184140T3 ES2184140T3 ES97948835T ES97948835T ES2184140T3 ES 2184140 T3 ES2184140 T3 ES 2184140T3 ES 97948835 T ES97948835 T ES 97948835T ES 97948835 T ES97948835 T ES 97948835T ES 2184140 T3 ES2184140 T3 ES 2184140T3
- Authority
- ES
- Spain
- Prior art keywords
- image
- stored
- organ
- unit
- allows
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005259 measurement Methods 0.000 abstract 4
- 210000000056 organ Anatomy 0.000 abstract 4
- 230000010354 integration Effects 0.000 abstract 2
- 230000003287 optical effect Effects 0.000 abstract 2
- 230000005855 radiation Effects 0.000 abstract 2
- 230000005693 optoelectronics Effects 0.000 abstract 1
- 230000003595 spectral effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
- H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
- H04N25/135—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on four or more different wavelength filter elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
- H04N25/44—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
- H04N25/447—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array by preserving the colour pattern with or without loss of information
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
- H01L27/14614—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor having a special gate structure
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N2209/00—Details of colour television systems
- H04N2209/04—Picture signal generators
- H04N2209/041—Picture signal generators using solid-state devices
- H04N2209/042—Picture signal generators using solid-state devices having a single pick-up sensor
- H04N2209/043—Picture signal generators using solid-state devices having a single pick-up sensor using an alternating colour separation filter, e.g. colour wheel or colour LCD
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
- H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Color Television Image Signal Generators (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Studio Devices (AREA)
- Light Receiving Elements (AREA)
Abstract
LA INVENCION SE REFIERE A UN SENSOR OPTICO QUE CONSTA DE UNA DISPOSICION DE UNIDADES DE PUNTOS DE IMAGEN, CADA UNA DE LAS CUALES COMPRENDE UN CONVERTIDOR OPTOELECTRONICO PARA TRANSFORMAR LA RADIACION INCIDENTE EN UNA CORRIENTE FOTOELECTRICA QUE DEPENDE DE LA INTENSIDAD Y DE LA LONGITUD DE ONDA, UN ORGANO DE INTEGRACION PARA OBTENER UNA MEDIDA CORRESPONDIENTE A LA CORRIENTE FOTOELECTRICA DETECTADA Y UN ORGANO DE ALMACENAMIENTO CONTROLABLE PARA DEPOSITAR EN MEMORIA LOS VALORES MEDIDOS, Y DE UN EQUIPO DE CONTROL DE LECTURA QUE PERMITA LEER LOS VALORES DE MEDIDA ALMACENADOS QUE SE REFIERAN A UNA UNIDAD DE PUNTOS DE IMAGEN. A PARTIR DE LOS VALORES DE MEDIDA QUE SE REFIEREN A UNA UNIDAD DE PUNTOS DE IMAGEN, PUEDE COMPONERSE LA IMAGEN INCIDENTE EN EL SENSOR. EL OBJETIVO DE CREAR UN SENSOR OPTICO QUE ADMITA EL FUNCIONAMIENTO DENTRO DE UN TIEMPO DE EXPOSICION DE CORTA DURACION SE CONSIGUE SI CADA UNIDAD DE PUNTOS DE IMAGEN COMPRENDE UN ORGANO DE INTEGRACION (7, 8; 11, 12; 15, 16) Y AL MENOS DOS ORGANOS DE MEMORIA (21, 22, 23) MONTADOS EN PARALELO, SI DURANTE EL PERIODO DE MEDIDA PUEDEN RECOGERSE AL MENOS DOS VALORES DE MEDIDA ASOCIADOS A ZONAS ESPECTRALES DIFERENTES DE LA RADIACION INCIDENTE, SI DICHOS VALORES PUEDEN ALMACENARSE Y SI A CONTINUACION PUEDEN LEERSE EN COMUN PARA FORMAR LA INFORMACION CROMATICA DE INTERES QUE PERMITA FORMAR EL ELEMENTO DE PUNTO DE IMAGEN.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19643972 | 1996-10-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2184140T3 true ES2184140T3 (es) | 2003-04-01 |
Family
ID=7809709
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES97948835T Expired - Lifetime ES2184140T3 (es) | 1996-10-31 | 1997-10-30 | Sensor de imagen de color para una exposicion a corto plazo. |
Country Status (10)
Country | Link |
---|---|
US (1) | US6518558B1 (es) |
EP (1) | EP0878091B1 (es) |
JP (1) | JP2000501919A (es) |
CN (1) | CN1209930A (es) |
AT (1) | ATE224122T1 (es) |
DE (1) | DE59708194D1 (es) |
DK (1) | DK0878091T3 (es) |
ES (1) | ES2184140T3 (es) |
PT (1) | PT878091E (es) |
WO (1) | WO1998019455A1 (es) |
Families Citing this family (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7098952B2 (en) * | 1998-04-16 | 2006-08-29 | Intel Corporation | Imager having multiple storage locations for each pixel sensor |
US6078037A (en) * | 1998-04-16 | 2000-06-20 | Intel Corporation | Active pixel CMOS sensor with multiple storage capacitors |
US6606120B1 (en) * | 1998-04-24 | 2003-08-12 | Foveon, Inc. | Multiple storage node full color active pixel sensors |
US6410899B1 (en) | 1998-06-17 | 2002-06-25 | Foveon, Inc. | Active pixel sensor with bootstrap amplification and reduced leakage during readout |
WO2000005874A1 (en) * | 1998-07-22 | 2000-02-03 | Foveon, Inc. | Multiple storage node active pixel sensors |
US6563540B2 (en) | 1999-02-26 | 2003-05-13 | Intel Corporation | Light sensor with increased dynamic range |
EP1166359A1 (de) * | 1999-03-04 | 2002-01-02 | Böhm, Markus | Bildsensoreinrichtung |
US6727521B2 (en) | 2000-09-25 | 2004-04-27 | Foveon, Inc. | Vertical color filter detector group and array |
US6697114B1 (en) | 1999-08-13 | 2004-02-24 | Foveon, Inc. | Triple slope pixel sensor and arry |
US6809768B1 (en) | 2000-02-14 | 2004-10-26 | Foveon, Inc. | Double slope pixel sensor and array |
US6882367B1 (en) | 2000-02-29 | 2005-04-19 | Foveon, Inc. | High-sensitivity storage pixel sensor having auto-exposure detection |
FR2815806B1 (fr) * | 2000-10-23 | 2002-11-29 | Commissariat Energie Atomique | Lecteur pour element de detection de rayonnements electromagnetiques, capteur, et procede de lecture correspondant |
DE10052863A1 (de) * | 2000-10-24 | 2002-04-25 | Christian Pilgrim | Endoskopisches Instrument zur Anwendung in Hohlräumen |
JP3939092B2 (ja) * | 2000-12-28 | 2007-06-27 | セイコーインスツル株式会社 | 光電変換装置 |
US6930336B1 (en) | 2001-06-18 | 2005-08-16 | Foveon, Inc. | Vertical-color-filter detector group with trench isolation |
US6960757B2 (en) | 2001-06-18 | 2005-11-01 | Foveon, Inc. | Simplified wiring schemes for vertical color filter pixel sensors |
US6864557B2 (en) | 2001-06-18 | 2005-03-08 | Foveon, Inc. | Vertical color filter detector group and array |
US6998660B2 (en) | 2002-03-20 | 2006-02-14 | Foveon, Inc. | Vertical color filter sensor group array that emulates a pattern of single-layer sensors with efficient use of each sensor group's sensors |
US6704046B2 (en) * | 2002-04-17 | 2004-03-09 | Motorola, Inc. | Digital pixel image sensor with independent color channel reference signals |
US7164444B1 (en) | 2002-05-17 | 2007-01-16 | Foveon, Inc. | Vertical color filter detector group with highlight detector |
AU2003250051A1 (en) * | 2002-07-16 | 2004-02-02 | Stmicroelectronics Nv | Tfa image sensor with stability-optimized photodiode |
US7170041B2 (en) * | 2002-07-17 | 2007-01-30 | Xerox Corporation | Pixel circuitry for imaging system |
US6903394B2 (en) * | 2002-11-27 | 2005-06-07 | Micron Technology, Inc. | CMOS imager with improved color response |
US7339216B1 (en) | 2003-01-31 | 2008-03-04 | Foveon, Inc. | Vertical color filter sensor group array with full-resolution top layer and lower-resolution lower layer |
US7586074B2 (en) * | 2003-02-17 | 2009-09-08 | Raytheon Company | Multi-mode high capacity dual integration direct injection detector input circuit |
US7821555B2 (en) * | 2003-04-21 | 2010-10-26 | Micron Technology, Inc. | Multi path power for CMOS imagers |
US20050212936A1 (en) * | 2004-03-25 | 2005-09-29 | Eastman Kodak Company | Extended dynamic range image sensor with fixed pattern noise reduction |
US7491927B2 (en) * | 2004-06-24 | 2009-02-17 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Color sensing circuit employing charge storage device |
DE102005040901B8 (de) * | 2004-08-31 | 2014-08-14 | Omron Corporation | Sensorsystem |
US7911518B2 (en) * | 2005-02-01 | 2011-03-22 | Samsung Electronics Co., Ltd. | Variable exposure for color image sensor |
US7652699B2 (en) | 2005-08-30 | 2010-01-26 | Motorola, Inc. | Color image sensor with tunable color filter |
JP2007135106A (ja) * | 2005-11-11 | 2007-05-31 | Matsushita Electric Ind Co Ltd | 光電流増幅回路、及び光ピックアップ装置 |
US7602430B1 (en) | 2007-04-18 | 2009-10-13 | Foveon, Inc. | High-gain multicolor pixel sensor with reset noise cancellation |
TWI380260B (en) * | 2007-12-06 | 2012-12-21 | Au Optronics Corp | Ambient light detection system and related method |
US7745773B1 (en) | 2008-04-11 | 2010-06-29 | Foveon, Inc. | Multi-color CMOS pixel sensor with shared row wiring and dual output lines |
FR2937150B1 (fr) * | 2008-10-15 | 2010-12-24 | Soc Fr Detecteurs Infrarouges Sofradir | Dispositif et procede pour realiser la lecture de courants electriques resultant d'un detecteur de signaux electromagnetiques |
US8405750B2 (en) * | 2009-06-08 | 2013-03-26 | Aptina Imaging Corporation | Image sensors and image reconstruction methods for capturing high dynamic range images |
JP5400507B2 (ja) * | 2009-07-13 | 2014-01-29 | キヤノン株式会社 | 撮像装置及び放射線撮像システム |
US8913153B2 (en) | 2011-10-06 | 2014-12-16 | Aptina Imaging Corporation | Imaging systems and methods for generating motion-compensated high-dynamic-range images |
US9172889B2 (en) | 2012-02-09 | 2015-10-27 | Semiconductor Components Industries, Llc | Imaging systems and methods for generating auto-exposed high-dynamic-range images |
US9007488B2 (en) | 2012-03-08 | 2015-04-14 | Semiconductor Components Industries, Llc | Systems and methods for generating interpolated high-dynamic-range images |
US9766126B2 (en) | 2013-07-12 | 2017-09-19 | Zyomed Corp. | Dynamic radially controlled light input to a noninvasive analyzer apparatus and method of use thereof |
US9338372B2 (en) | 2012-09-19 | 2016-05-10 | Semiconductor Components Industries, Llc | Column-based high dynamic range imaging systems |
DE102016212765A1 (de) | 2016-07-13 | 2018-01-18 | Robert Bosch Gmbh | Pixeleinheit für einen Bildsensor, Bildsensor, Verfahren zum Sensieren eines Lichtsignals, Verfahren zum Ansteuern einer Pixeleinheit und Verfahren zum Generieren eines Bildes unter Verwendung einer Pixeleinheit |
WO2018146146A1 (en) * | 2017-02-08 | 2018-08-16 | Trinamix Gmbh | Detector for an optical detection of at least one object |
IT202000018709A1 (it) * | 2020-07-31 | 2022-01-31 | Milano Politecnico | Sistema di rivelazione dello spettro di una radiazione elettromagnetica |
IT202000018760A1 (it) * | 2020-07-31 | 2022-01-31 | Milano Politecnico | Dispositivo sensore di radiazione elettromagnetica a doppio fotodiodo |
WO2023092503A1 (zh) * | 2021-11-26 | 2023-06-01 | 京东方科技集团股份有限公司 | 光检测模组、光检测方法和显示装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6454978A (en) * | 1987-08-26 | 1989-03-02 | Toshiba Corp | Solid-state image pickup element |
EP0603877A3 (en) * | 1992-12-23 | 1996-02-07 | Loral Fairchild Corp | Electronic color snapshot technique and structure using very high resolution monochrome full frame ccd imagers. |
JPH07250287A (ja) | 1994-03-10 | 1995-09-26 | Nec Corp | 固体撮像素子とその駆動方法 |
DK0788661T3 (da) * | 1994-10-30 | 1999-11-22 | Markus Bihm | Trefarvesensor |
US5754229A (en) * | 1995-11-14 | 1998-05-19 | Lockheed Martin Corporation | Electronic image sensor with multiple, sequential or staggered exposure capability for color snap shot cameras and other high speed applications |
KR100263500B1 (ko) | 1996-12-24 | 2000-08-01 | 다니구찌 이찌로오 | 고체 촬상 소자 및 그 구동 방법 |
-
1997
- 1997-10-30 AT AT97948835T patent/ATE224122T1/de not_active IP Right Cessation
- 1997-10-30 WO PCT/EP1997/005978 patent/WO1998019455A1/de active IP Right Grant
- 1997-10-30 PT PT97948835T patent/PT878091E/pt unknown
- 1997-10-30 ES ES97948835T patent/ES2184140T3/es not_active Expired - Lifetime
- 1997-10-30 JP JP10520053A patent/JP2000501919A/ja not_active Ceased
- 1997-10-30 CN CN97191827A patent/CN1209930A/zh active Pending
- 1997-10-30 DE DE59708194T patent/DE59708194D1/de not_active Expired - Fee Related
- 1997-10-30 EP EP97948835A patent/EP0878091B1/de not_active Expired - Lifetime
- 1997-10-30 DK DK97948835T patent/DK0878091T3/da active
-
2000
- 2000-09-28 US US09/672,667 patent/US6518558B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
ATE224122T1 (de) | 2002-09-15 |
JP2000501919A (ja) | 2000-02-15 |
EP0878091B1 (de) | 2002-09-11 |
PT878091E (pt) | 2003-01-31 |
CN1209930A (zh) | 1999-03-03 |
WO1998019455A1 (de) | 1998-05-07 |
DE59708194D1 (de) | 2002-10-17 |
DK0878091T3 (da) | 2003-01-20 |
US6518558B1 (en) | 2003-02-11 |
EP0878091A1 (de) | 1998-11-18 |
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