ES2184140T3 - Sensor de imagen de color para una exposicion a corto plazo. - Google Patents

Sensor de imagen de color para una exposicion a corto plazo.

Info

Publication number
ES2184140T3
ES2184140T3 ES97948835T ES97948835T ES2184140T3 ES 2184140 T3 ES2184140 T3 ES 2184140T3 ES 97948835 T ES97948835 T ES 97948835T ES 97948835 T ES97948835 T ES 97948835T ES 2184140 T3 ES2184140 T3 ES 2184140T3
Authority
ES
Spain
Prior art keywords
image
stored
organ
unit
allows
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES97948835T
Other languages
English (en)
Inventor
Markus Bihm
Peter Rieve
Tarek Lule
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Application granted granted Critical
Publication of ES2184140T3 publication Critical patent/ES2184140T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/135—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on four or more different wavelength filter elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/44—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
    • H04N25/447—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array by preserving the colour pattern with or without loss of information
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H01L27/14614—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor having a special gate structure
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N2209/00—Details of colour television systems
    • H04N2209/04—Picture signal generators
    • H04N2209/041—Picture signal generators using solid-state devices
    • H04N2209/042—Picture signal generators using solid-state devices having a single pick-up sensor
    • H04N2209/043—Picture signal generators using solid-state devices having a single pick-up sensor using an alternating colour separation filter, e.g. colour wheel or colour LCD
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Color Television Image Signal Generators (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Studio Devices (AREA)
  • Light Receiving Elements (AREA)

Abstract

LA INVENCION SE REFIERE A UN SENSOR OPTICO QUE CONSTA DE UNA DISPOSICION DE UNIDADES DE PUNTOS DE IMAGEN, CADA UNA DE LAS CUALES COMPRENDE UN CONVERTIDOR OPTOELECTRONICO PARA TRANSFORMAR LA RADIACION INCIDENTE EN UNA CORRIENTE FOTOELECTRICA QUE DEPENDE DE LA INTENSIDAD Y DE LA LONGITUD DE ONDA, UN ORGANO DE INTEGRACION PARA OBTENER UNA MEDIDA CORRESPONDIENTE A LA CORRIENTE FOTOELECTRICA DETECTADA Y UN ORGANO DE ALMACENAMIENTO CONTROLABLE PARA DEPOSITAR EN MEMORIA LOS VALORES MEDIDOS, Y DE UN EQUIPO DE CONTROL DE LECTURA QUE PERMITA LEER LOS VALORES DE MEDIDA ALMACENADOS QUE SE REFIERAN A UNA UNIDAD DE PUNTOS DE IMAGEN. A PARTIR DE LOS VALORES DE MEDIDA QUE SE REFIEREN A UNA UNIDAD DE PUNTOS DE IMAGEN, PUEDE COMPONERSE LA IMAGEN INCIDENTE EN EL SENSOR. EL OBJETIVO DE CREAR UN SENSOR OPTICO QUE ADMITA EL FUNCIONAMIENTO DENTRO DE UN TIEMPO DE EXPOSICION DE CORTA DURACION SE CONSIGUE SI CADA UNIDAD DE PUNTOS DE IMAGEN COMPRENDE UN ORGANO DE INTEGRACION (7, 8; 11, 12; 15, 16) Y AL MENOS DOS ORGANOS DE MEMORIA (21, 22, 23) MONTADOS EN PARALELO, SI DURANTE EL PERIODO DE MEDIDA PUEDEN RECOGERSE AL MENOS DOS VALORES DE MEDIDA ASOCIADOS A ZONAS ESPECTRALES DIFERENTES DE LA RADIACION INCIDENTE, SI DICHOS VALORES PUEDEN ALMACENARSE Y SI A CONTINUACION PUEDEN LEERSE EN COMUN PARA FORMAR LA INFORMACION CROMATICA DE INTERES QUE PERMITA FORMAR EL ELEMENTO DE PUNTO DE IMAGEN.
ES97948835T 1996-10-31 1997-10-30 Sensor de imagen de color para una exposicion a corto plazo. Expired - Lifetime ES2184140T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19643972 1996-10-31

Publications (1)

Publication Number Publication Date
ES2184140T3 true ES2184140T3 (es) 2003-04-01

Family

ID=7809709

Family Applications (1)

Application Number Title Priority Date Filing Date
ES97948835T Expired - Lifetime ES2184140T3 (es) 1996-10-31 1997-10-30 Sensor de imagen de color para una exposicion a corto plazo.

Country Status (10)

Country Link
US (1) US6518558B1 (es)
EP (1) EP0878091B1 (es)
JP (1) JP2000501919A (es)
CN (1) CN1209930A (es)
AT (1) ATE224122T1 (es)
DE (1) DE59708194D1 (es)
DK (1) DK0878091T3 (es)
ES (1) ES2184140T3 (es)
PT (1) PT878091E (es)
WO (1) WO1998019455A1 (es)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7098952B2 (en) * 1998-04-16 2006-08-29 Intel Corporation Imager having multiple storage locations for each pixel sensor
US6078037A (en) * 1998-04-16 2000-06-20 Intel Corporation Active pixel CMOS sensor with multiple storage capacitors
US6606120B1 (en) * 1998-04-24 2003-08-12 Foveon, Inc. Multiple storage node full color active pixel sensors
US6410899B1 (en) 1998-06-17 2002-06-25 Foveon, Inc. Active pixel sensor with bootstrap amplification and reduced leakage during readout
WO2000005874A1 (en) * 1998-07-22 2000-02-03 Foveon, Inc. Multiple storage node active pixel sensors
US6563540B2 (en) 1999-02-26 2003-05-13 Intel Corporation Light sensor with increased dynamic range
EP1166359A1 (de) * 1999-03-04 2002-01-02 Böhm, Markus Bildsensoreinrichtung
US6727521B2 (en) 2000-09-25 2004-04-27 Foveon, Inc. Vertical color filter detector group and array
US6697114B1 (en) 1999-08-13 2004-02-24 Foveon, Inc. Triple slope pixel sensor and arry
US6809768B1 (en) 2000-02-14 2004-10-26 Foveon, Inc. Double slope pixel sensor and array
US6882367B1 (en) 2000-02-29 2005-04-19 Foveon, Inc. High-sensitivity storage pixel sensor having auto-exposure detection
FR2815806B1 (fr) * 2000-10-23 2002-11-29 Commissariat Energie Atomique Lecteur pour element de detection de rayonnements electromagnetiques, capteur, et procede de lecture correspondant
DE10052863A1 (de) * 2000-10-24 2002-04-25 Christian Pilgrim Endoskopisches Instrument zur Anwendung in Hohlräumen
JP3939092B2 (ja) * 2000-12-28 2007-06-27 セイコーインスツル株式会社 光電変換装置
US6930336B1 (en) 2001-06-18 2005-08-16 Foveon, Inc. Vertical-color-filter detector group with trench isolation
US6960757B2 (en) 2001-06-18 2005-11-01 Foveon, Inc. Simplified wiring schemes for vertical color filter pixel sensors
US6864557B2 (en) 2001-06-18 2005-03-08 Foveon, Inc. Vertical color filter detector group and array
US6998660B2 (en) 2002-03-20 2006-02-14 Foveon, Inc. Vertical color filter sensor group array that emulates a pattern of single-layer sensors with efficient use of each sensor group's sensors
US6704046B2 (en) * 2002-04-17 2004-03-09 Motorola, Inc. Digital pixel image sensor with independent color channel reference signals
US7164444B1 (en) 2002-05-17 2007-01-16 Foveon, Inc. Vertical color filter detector group with highlight detector
AU2003250051A1 (en) * 2002-07-16 2004-02-02 Stmicroelectronics Nv Tfa image sensor with stability-optimized photodiode
US7170041B2 (en) * 2002-07-17 2007-01-30 Xerox Corporation Pixel circuitry for imaging system
US6903394B2 (en) * 2002-11-27 2005-06-07 Micron Technology, Inc. CMOS imager with improved color response
US7339216B1 (en) 2003-01-31 2008-03-04 Foveon, Inc. Vertical color filter sensor group array with full-resolution top layer and lower-resolution lower layer
US7586074B2 (en) * 2003-02-17 2009-09-08 Raytheon Company Multi-mode high capacity dual integration direct injection detector input circuit
US7821555B2 (en) * 2003-04-21 2010-10-26 Micron Technology, Inc. Multi path power for CMOS imagers
US20050212936A1 (en) * 2004-03-25 2005-09-29 Eastman Kodak Company Extended dynamic range image sensor with fixed pattern noise reduction
US7491927B2 (en) * 2004-06-24 2009-02-17 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Color sensing circuit employing charge storage device
DE102005040901B8 (de) * 2004-08-31 2014-08-14 Omron Corporation Sensorsystem
US7911518B2 (en) * 2005-02-01 2011-03-22 Samsung Electronics Co., Ltd. Variable exposure for color image sensor
US7652699B2 (en) 2005-08-30 2010-01-26 Motorola, Inc. Color image sensor with tunable color filter
JP2007135106A (ja) * 2005-11-11 2007-05-31 Matsushita Electric Ind Co Ltd 光電流増幅回路、及び光ピックアップ装置
US7602430B1 (en) 2007-04-18 2009-10-13 Foveon, Inc. High-gain multicolor pixel sensor with reset noise cancellation
TWI380260B (en) * 2007-12-06 2012-12-21 Au Optronics Corp Ambient light detection system and related method
US7745773B1 (en) 2008-04-11 2010-06-29 Foveon, Inc. Multi-color CMOS pixel sensor with shared row wiring and dual output lines
FR2937150B1 (fr) * 2008-10-15 2010-12-24 Soc Fr Detecteurs Infrarouges Sofradir Dispositif et procede pour realiser la lecture de courants electriques resultant d'un detecteur de signaux electromagnetiques
US8405750B2 (en) * 2009-06-08 2013-03-26 Aptina Imaging Corporation Image sensors and image reconstruction methods for capturing high dynamic range images
JP5400507B2 (ja) * 2009-07-13 2014-01-29 キヤノン株式会社 撮像装置及び放射線撮像システム
US8913153B2 (en) 2011-10-06 2014-12-16 Aptina Imaging Corporation Imaging systems and methods for generating motion-compensated high-dynamic-range images
US9172889B2 (en) 2012-02-09 2015-10-27 Semiconductor Components Industries, Llc Imaging systems and methods for generating auto-exposed high-dynamic-range images
US9007488B2 (en) 2012-03-08 2015-04-14 Semiconductor Components Industries, Llc Systems and methods for generating interpolated high-dynamic-range images
US9766126B2 (en) 2013-07-12 2017-09-19 Zyomed Corp. Dynamic radially controlled light input to a noninvasive analyzer apparatus and method of use thereof
US9338372B2 (en) 2012-09-19 2016-05-10 Semiconductor Components Industries, Llc Column-based high dynamic range imaging systems
DE102016212765A1 (de) 2016-07-13 2018-01-18 Robert Bosch Gmbh Pixeleinheit für einen Bildsensor, Bildsensor, Verfahren zum Sensieren eines Lichtsignals, Verfahren zum Ansteuern einer Pixeleinheit und Verfahren zum Generieren eines Bildes unter Verwendung einer Pixeleinheit
WO2018146146A1 (en) * 2017-02-08 2018-08-16 Trinamix Gmbh Detector for an optical detection of at least one object
IT202000018709A1 (it) * 2020-07-31 2022-01-31 Milano Politecnico Sistema di rivelazione dello spettro di una radiazione elettromagnetica
IT202000018760A1 (it) * 2020-07-31 2022-01-31 Milano Politecnico Dispositivo sensore di radiazione elettromagnetica a doppio fotodiodo
WO2023092503A1 (zh) * 2021-11-26 2023-06-01 京东方科技集团股份有限公司 光检测模组、光检测方法和显示装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6454978A (en) * 1987-08-26 1989-03-02 Toshiba Corp Solid-state image pickup element
EP0603877A3 (en) * 1992-12-23 1996-02-07 Loral Fairchild Corp Electronic color snapshot technique and structure using very high resolution monochrome full frame ccd imagers.
JPH07250287A (ja) 1994-03-10 1995-09-26 Nec Corp 固体撮像素子とその駆動方法
DK0788661T3 (da) * 1994-10-30 1999-11-22 Markus Bihm Trefarvesensor
US5754229A (en) * 1995-11-14 1998-05-19 Lockheed Martin Corporation Electronic image sensor with multiple, sequential or staggered exposure capability for color snap shot cameras and other high speed applications
KR100263500B1 (ko) 1996-12-24 2000-08-01 다니구찌 이찌로오 고체 촬상 소자 및 그 구동 방법

Also Published As

Publication number Publication date
ATE224122T1 (de) 2002-09-15
JP2000501919A (ja) 2000-02-15
EP0878091B1 (de) 2002-09-11
PT878091E (pt) 2003-01-31
CN1209930A (zh) 1999-03-03
WO1998019455A1 (de) 1998-05-07
DE59708194D1 (de) 2002-10-17
DK0878091T3 (da) 2003-01-20
US6518558B1 (en) 2003-02-11
EP0878091A1 (de) 1998-11-18

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