ES2153763B1 - NEW SOURCE OF ELECTRONIC ISSUANCE CONSTITUTED BY TUBULAR NANOESTRUCTURES OF BORO NITRIDE AND ITS MANUFACTURE. - Google Patents
NEW SOURCE OF ELECTRONIC ISSUANCE CONSTITUTED BY TUBULAR NANOESTRUCTURES OF BORO NITRIDE AND ITS MANUFACTURE.Info
- Publication number
- ES2153763B1 ES2153763B1 ES9802690A ES9802690A ES2153763B1 ES 2153763 B1 ES2153763 B1 ES 2153763B1 ES 9802690 A ES9802690 A ES 9802690A ES 9802690 A ES9802690 A ES 9802690A ES 2153763 B1 ES2153763 B1 ES 2153763B1
- Authority
- ES
- Spain
- Prior art keywords
- tubular
- sup
- manufacture
- constituted
- new source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Abstract
"Nueva fuente de emisión electrónica constituida por nanoestructuras tubulares de nitruro de boro y su fabricación". En el diseño de la mayoría de los cátodos comerciales se busca obtener la mayor emisión de electrones al menor coste, es decir, operando a temperatura ambiente y a pequeños voltajes aplicados. Sin embargo, en la actualidad, para obtener emisiones electrónicas adecuadas por unidad de área típicamente se necesitan altas temperaturas (entre 1000 y a 2600 grados Kelvin) y/o un elevado campo eléctrico aplicado (10{sup,3}-10{sup,4} Voltios/micrómetro. Un micrómetro, {mi}m, es igual a 10{sup-6} metros). Con la siguiente invención se resuelven estos problemas mediante la caracterización de las estructuras geométricas óptimas de los nanotubos de nitruro de boro (BN) y el diseño de una fuente de emisión de electrones extremadamente ligera formada por estas estructuras tubulares de BN que funciona a pequeños campos eléctricos aplicados."New source of electronic emission constituted by tubular nanostructures of boron nitride and its manufacture". The design of most commercial cathodes seeks to obtain the highest emission of electrons at the lowest cost, that is, operating at room temperature and at small applied voltages. However, at present, high temperatures (between 1000 and 2600 degrees Kelvin) and / or a high applied electric field (10 {sup, 3} -10 {sup, 4) are typically required to obtain adequate electronic emissions per unit area. } Volts / micrometer One micrometer, {mi} m, is equal to 10 {sup-6} meters). With the following invention, these problems are solved by characterizing the optimal geometric structures of the boron nitride nanotubes (BN) and designing an extremely light electron emission source formed by these tubular BN structures that operate in small fields Applied electrical
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ES9802690A ES2153763B1 (en) | 1998-12-17 | 1998-12-17 | NEW SOURCE OF ELECTRONIC ISSUANCE CONSTITUTED BY TUBULAR NANOESTRUCTURES OF BORO NITRIDE AND ITS MANUFACTURE. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ES9802690A ES2153763B1 (en) | 1998-12-17 | 1998-12-17 | NEW SOURCE OF ELECTRONIC ISSUANCE CONSTITUTED BY TUBULAR NANOESTRUCTURES OF BORO NITRIDE AND ITS MANUFACTURE. |
Publications (2)
Publication Number | Publication Date |
---|---|
ES2153763A1 ES2153763A1 (en) | 2001-03-01 |
ES2153763B1 true ES2153763B1 (en) | 2001-10-01 |
Family
ID=8306212
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES9802690A Expired - Fee Related ES2153763B1 (en) | 1998-12-17 | 1998-12-17 | NEW SOURCE OF ELECTRONIC ISSUANCE CONSTITUTED BY TUBULAR NANOESTRUCTURES OF BORO NITRIDE AND ITS MANUFACTURE. |
Country Status (1)
Country | Link |
---|---|
ES (1) | ES2153763B1 (en) |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6057637A (en) * | 1996-09-13 | 2000-05-02 | The Regents Of The University Of California | Field emission electron source |
JPH11273551A (en) * | 1998-03-23 | 1999-10-08 | Nec Corp | Electron emitting element employing boron nitride and its manufacture |
-
1998
- 1998-12-17 ES ES9802690A patent/ES2153763B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
ES2153763A1 (en) | 2001-03-01 |
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Legal Events
Date | Code | Title | Description |
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EC2A | Search report published |
Date of ref document: 20010301 Kind code of ref document: A1 Effective date: 20010301 |
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FD2A | Announcement of lapse in spain |
Effective date: 20190326 |