ES2139656T3 - Metodo para producir substratos semiconductores cristalinos de calidad vlsi. - Google Patents
Metodo para producir substratos semiconductores cristalinos de calidad vlsi.Info
- Publication number
- ES2139656T3 ES2139656T3 ES93909989T ES93909989T ES2139656T3 ES 2139656 T3 ES2139656 T3 ES 2139656T3 ES 93909989 T ES93909989 T ES 93909989T ES 93909989 T ES93909989 T ES 93909989T ES 2139656 T3 ES2139656 T3 ES 2139656T3
- Authority
- ES
- Spain
- Prior art keywords
- work
- transparent
- vlsi
- substrates
- quality crystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 239000011159 matrix material Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000012780 transparent material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/13336—Combining plural substrates to produce large-area displays, e.g. tiled displays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83894—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/915—Separating from substrate
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
ES DESCRITO UN METODO QUE HACE POSIBLE USAR LOS SUBSTRATOS SEMICONDUCTORES CRISTALINOS DE CALIDAD VLSI PARA LA FABRICACION DE LOS DISPOSITIVOS ACTIVOS DE PANELES PLANOS DE MATRIZ ACTIVA (AMFPD). LOS SUBSTRATOS VLSI SE PROPORCIONAN DISPONIENDO UNA CAPA DE MATERIAL TRANSPARENTE A LA LUZ EN ESAS AREAS DE UNA OBRA SEMICONDUCTORA EN LOS CUALES NO SE DISPONDRAN DISPOSITIVOS ACTIVOS, ELIMINANDO LA OBRA SEMICONDUCTORA CON LO CUAL SE OBTIENE UNA OBRA TRANSPARENTE CON REGIONES SEMICONDUCTORAS CRISTALINAS Y LUEGO CONFORMANDO LA OBRA TRANSPARENTE EN UNA UNIDAD MODULAR DEL TAMAÑO ADECUADO. VARIAS UNIDADES MODULARES PUEDEN SER UNIDAS A UN SUSTRATO DE VIDRIO Y UN MATERIAL CONDUCTOR ES LUEGO DEPOSITADO PARA HACER INTERCONEXIONES ELECTRICAS ENTRE LAS UNIDADES MODULARES. LA OPERACION DE ENLACE PUEDE SER DESARROLLADA A TEMPERATURA AMBIENTE USANDO UN PEGAMENTO TRANSPARENTE A LA LUZ O A TEMPERATURA MAS ALTA USANDO UNA TECNICA DE UNION DE OBLEAS CONOCIDA EN TECNOLOGIA DE LA SILICE SOBRE AISLANTE.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP1993/001206 WO1994027321A1 (en) | 1993-05-13 | 1993-05-13 | Method of providing vlsi-quality crystalline semiconductor substrates |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2139656T3 true ES2139656T3 (es) | 2000-02-16 |
Family
ID=8165731
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES93909989T Expired - Lifetime ES2139656T3 (es) | 1993-05-13 | 1993-05-13 | Metodo para producir substratos semiconductores cristalinos de calidad vlsi. |
Country Status (7)
Country | Link |
---|---|
US (1) | US5493986A (es) |
EP (1) | EP0650641B1 (es) |
JP (1) | JPH07509105A (es) |
KR (1) | KR100306043B1 (es) |
DE (1) | DE69327103T2 (es) |
ES (1) | ES2139656T3 (es) |
WO (1) | WO1994027321A1 (es) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3382467B2 (ja) | 1995-09-14 | 2003-03-04 | キヤノン株式会社 | アクティブマトリクス基板の製造方法 |
US6818529B2 (en) * | 2002-09-12 | 2004-11-16 | Applied Materials, Inc. | Apparatus and method for forming a silicon film across the surface of a glass substrate |
US7776718B2 (en) * | 2007-06-25 | 2010-08-17 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor substrate with reduced gap size between single-crystalline layers |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3740280A (en) * | 1971-05-14 | 1973-06-19 | Rca Corp | Method of making semiconductor device |
US4174217A (en) * | 1974-08-02 | 1979-11-13 | Rca Corporation | Method for making semiconductor structure |
US4626878A (en) * | 1981-12-11 | 1986-12-02 | Sanyo Electric Co., Ltd. | Semiconductor optical logical device |
JPS59158553A (ja) * | 1983-02-28 | 1984-09-08 | Toshiba Corp | 光学的固体装置 |
US4819038A (en) * | 1986-12-22 | 1989-04-04 | Ibm Corporation | TFT array for liquid crystal displays allowing in-process testing |
US5162931A (en) * | 1990-11-06 | 1992-11-10 | Honeywell, Inc. | Method of manufacturing flat panel backplanes including redundant gate lines and displays made thereby |
US5110748A (en) * | 1991-03-28 | 1992-05-05 | Honeywell Inc. | Method for fabricating high mobility thin film transistors as integrated drivers for active matrix display |
US5399231A (en) * | 1993-10-18 | 1995-03-21 | Regents Of The University Of California | Method of forming crystalline silicon devices on glass |
-
1993
- 1993-05-13 WO PCT/EP1993/001206 patent/WO1994027321A1/en active IP Right Grant
- 1993-05-13 JP JP6524842A patent/JPH07509105A/ja active Pending
- 1993-05-13 ES ES93909989T patent/ES2139656T3/es not_active Expired - Lifetime
- 1993-05-13 EP EP93909989A patent/EP0650641B1/en not_active Expired - Lifetime
- 1993-05-13 US US08/360,692 patent/US5493986A/en not_active Expired - Fee Related
- 1993-05-13 KR KR1019950700108A patent/KR100306043B1/ko not_active IP Right Cessation
- 1993-05-13 DE DE69327103T patent/DE69327103T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR950702747A (ko) | 1995-07-29 |
EP0650641A1 (en) | 1995-05-03 |
KR100306043B1 (ko) | 2001-12-17 |
DE69327103T2 (de) | 2000-06-08 |
US5493986A (en) | 1996-02-27 |
DE69327103D1 (de) | 1999-12-30 |
EP0650641B1 (en) | 1999-11-24 |
WO1994027321A1 (en) | 1994-11-24 |
JPH07509105A (ja) | 1995-10-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG2A | Definitive protection |
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