ES2139656T3 - Metodo para producir substratos semiconductores cristalinos de calidad vlsi. - Google Patents

Metodo para producir substratos semiconductores cristalinos de calidad vlsi.

Info

Publication number
ES2139656T3
ES2139656T3 ES93909989T ES93909989T ES2139656T3 ES 2139656 T3 ES2139656 T3 ES 2139656T3 ES 93909989 T ES93909989 T ES 93909989T ES 93909989 T ES93909989 T ES 93909989T ES 2139656 T3 ES2139656 T3 ES 2139656T3
Authority
ES
Spain
Prior art keywords
work
transparent
vlsi
substrates
quality crystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES93909989T
Other languages
English (en)
Inventor
Carlos Jorge Ramiro Pr Augusto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Application granted granted Critical
Publication of ES2139656T3 publication Critical patent/ES2139656T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13336—Combining plural substrates to produce large-area displays, e.g. tiled displays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83894—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/915—Separating from substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)

Abstract

ES DESCRITO UN METODO QUE HACE POSIBLE USAR LOS SUBSTRATOS SEMICONDUCTORES CRISTALINOS DE CALIDAD VLSI PARA LA FABRICACION DE LOS DISPOSITIVOS ACTIVOS DE PANELES PLANOS DE MATRIZ ACTIVA (AMFPD). LOS SUBSTRATOS VLSI SE PROPORCIONAN DISPONIENDO UNA CAPA DE MATERIAL TRANSPARENTE A LA LUZ EN ESAS AREAS DE UNA OBRA SEMICONDUCTORA EN LOS CUALES NO SE DISPONDRAN DISPOSITIVOS ACTIVOS, ELIMINANDO LA OBRA SEMICONDUCTORA CON LO CUAL SE OBTIENE UNA OBRA TRANSPARENTE CON REGIONES SEMICONDUCTORAS CRISTALINAS Y LUEGO CONFORMANDO LA OBRA TRANSPARENTE EN UNA UNIDAD MODULAR DEL TAMAÑO ADECUADO. VARIAS UNIDADES MODULARES PUEDEN SER UNIDAS A UN SUSTRATO DE VIDRIO Y UN MATERIAL CONDUCTOR ES LUEGO DEPOSITADO PARA HACER INTERCONEXIONES ELECTRICAS ENTRE LAS UNIDADES MODULARES. LA OPERACION DE ENLACE PUEDE SER DESARROLLADA A TEMPERATURA AMBIENTE USANDO UN PEGAMENTO TRANSPARENTE A LA LUZ O A TEMPERATURA MAS ALTA USANDO UNA TECNICA DE UNION DE OBLEAS CONOCIDA EN TECNOLOGIA DE LA SILICE SOBRE AISLANTE.
ES93909989T 1993-05-13 1993-05-13 Metodo para producir substratos semiconductores cristalinos de calidad vlsi. Expired - Lifetime ES2139656T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP1993/001206 WO1994027321A1 (en) 1993-05-13 1993-05-13 Method of providing vlsi-quality crystalline semiconductor substrates

Publications (1)

Publication Number Publication Date
ES2139656T3 true ES2139656T3 (es) 2000-02-16

Family

ID=8165731

Family Applications (1)

Application Number Title Priority Date Filing Date
ES93909989T Expired - Lifetime ES2139656T3 (es) 1993-05-13 1993-05-13 Metodo para producir substratos semiconductores cristalinos de calidad vlsi.

Country Status (7)

Country Link
US (1) US5493986A (es)
EP (1) EP0650641B1 (es)
JP (1) JPH07509105A (es)
KR (1) KR100306043B1 (es)
DE (1) DE69327103T2 (es)
ES (1) ES2139656T3 (es)
WO (1) WO1994027321A1 (es)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3382467B2 (ja) 1995-09-14 2003-03-04 キヤノン株式会社 アクティブマトリクス基板の製造方法
US6818529B2 (en) * 2002-09-12 2004-11-16 Applied Materials, Inc. Apparatus and method for forming a silicon film across the surface of a glass substrate
US7776718B2 (en) * 2007-06-25 2010-08-17 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor substrate with reduced gap size between single-crystalline layers

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3740280A (en) * 1971-05-14 1973-06-19 Rca Corp Method of making semiconductor device
US4174217A (en) * 1974-08-02 1979-11-13 Rca Corporation Method for making semiconductor structure
US4626878A (en) * 1981-12-11 1986-12-02 Sanyo Electric Co., Ltd. Semiconductor optical logical device
JPS59158553A (ja) * 1983-02-28 1984-09-08 Toshiba Corp 光学的固体装置
US4819038A (en) * 1986-12-22 1989-04-04 Ibm Corporation TFT array for liquid crystal displays allowing in-process testing
US5162931A (en) * 1990-11-06 1992-11-10 Honeywell, Inc. Method of manufacturing flat panel backplanes including redundant gate lines and displays made thereby
US5110748A (en) * 1991-03-28 1992-05-05 Honeywell Inc. Method for fabricating high mobility thin film transistors as integrated drivers for active matrix display
US5399231A (en) * 1993-10-18 1995-03-21 Regents Of The University Of California Method of forming crystalline silicon devices on glass

Also Published As

Publication number Publication date
KR950702747A (ko) 1995-07-29
EP0650641A1 (en) 1995-05-03
KR100306043B1 (ko) 2001-12-17
DE69327103T2 (de) 2000-06-08
US5493986A (en) 1996-02-27
DE69327103D1 (de) 1999-12-30
EP0650641B1 (en) 1999-11-24
WO1994027321A1 (en) 1994-11-24
JPH07509105A (ja) 1995-10-05

Similar Documents

Publication Publication Date Title
TW324862B (en) Liquid display apparatus
FR2601150B1 (fr) Vitrage a transmission variable du type electrochrome
IT1110275B (it) Struttura vetro-ceramica per substrati circuitali e relativo processo di fabbricazione
BR9510435A (pt) Produto de luva adequado para uso como uma barreira para resistir á transferência de calor entre uma fonte de calor externa e um substrato alongado e processo para sua produção
ES2108994T3 (es) Procedimiento mejorado para moldeo por transferencia de resina.
AU629292B2 (en) Construction element
ATE178102T1 (de) Durchsichtige diamantschichten und verfahren zu ihrer herstellung
BR9307735A (pt) Dispositivo eletrocrÈmico e combinação eletrocrÈmica
IT1159126B (it) Processo di fabbricazione di circuiti integrati bipolari di alte prestazioni
BR8700222A (pt) Composicao fotossensivel,artigo,processo para laminar um filme fotossensivel em um substrato
EP1003354A4 (en) METHOD FOR MANUFACTURING AN ORGANIC ELECTROLUMINESCENT DEVICE
JPS56115525A (en) Manufacture of semiconductor device
AU561741B2 (en) Roof cladding or similar building element allowing a heat exchange with the environment and usable particularly as a solar energy collector
NO174569C (no) Fremgangsmåte for fremstilling av solceller ved å gjenanvende silisiumbasismateriale anvendt for solceller
ES2171424T3 (es) Modulo electronico para tarjetas y fabricacion del mismo.
ES8406798A1 (es) Un metodo para producir un dispositivo semiconductor fotovoltaico de pelicula delgada con prioridades opticas mejoradas
BR8700993A (pt) Processo de formacao de camada fotorresistente em um substrato
DE3683979D1 (de) Durchsichtige leitende schicht und verfahren zu deren herstellung.
ES2139656T3 (es) Metodo para producir substratos semiconductores cristalinos de calidad vlsi.
JPS6284002U (es)
SE9402546L (sv) Elektroluminescerande anordning samt sätt att framställa denna
ATE124835T1 (de) Verfahren zur herstellung einer elektrolumineszierenden lampe.
BR8804090A (pt) Artigo estratificado flexivel e processo de preparacao de um artigo estratificado
DE3881032D1 (de) Verbindungssystem von hoher leistungsfaehigkeit fuer eine integrierte schaltung.
EP0911880A3 (en) Integrated thin film solar battery and method for fabricating the same

Legal Events

Date Code Title Description
FG2A Definitive protection

Ref document number: 650641

Country of ref document: ES