ES2097109T3 - Procedimiento de control del estado de conduccion de un transistor mos. - Google Patents

Procedimiento de control del estado de conduccion de un transistor mos.

Info

Publication number
ES2097109T3
ES2097109T3 ES88401626T ES88401626T ES2097109T3 ES 2097109 T3 ES2097109 T3 ES 2097109T3 ES 88401626 T ES88401626 T ES 88401626T ES 88401626 T ES88401626 T ES 88401626T ES 2097109 T3 ES2097109 T3 ES 2097109T3
Authority
ES
Spain
Prior art keywords
conducting state
mos transistor
control procedure
mos
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES88401626T
Other languages
English (en)
Inventor
Alain Boudou
Marie-Francoise Bonnal
Martine Rouillon-Martin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bull SAS
Original Assignee
Bull SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bull SAS filed Critical Bull SAS
Application granted granted Critical
Publication of ES2097109T3 publication Critical patent/ES2097109T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
    • H01L23/5254—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

EL ESTADO DE CONDUCCION DE UN TRANSISTOR MOS 11 ESTA GOBERNADO DEFINITIVAMENTE POR UN HAZ LASER 21 FORMANDO ENTRE LA REJILLA 16 Y LA PARTE SUBYACENTE D DE LA REGION DEL EMISOR 14 O DEL COLECTOR 15, UNA CONEXION ELECTRICA 22. EL INVENTO SE APLICA ESPECIALMENTE A LA CORRECCION DE CIRCUITOS INTEGRADOS (RECONFIGURACION, REDUNDANCIA) Y EN LA PROGRAMACION DE LAS MEMORIAS MUERTAS INTEGRADAS.
ES88401626T 1987-07-02 1988-06-27 Procedimiento de control del estado de conduccion de un transistor mos. Expired - Lifetime ES2097109T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8709381A FR2617637B1 (fr) 1987-07-02 1987-07-02 Procede de commande de l'etat de conduction d'un transistor mos et circuit integre mettant en oeuvre le procede

Publications (1)

Publication Number Publication Date
ES2097109T3 true ES2097109T3 (es) 1997-04-01

Family

ID=9352793

Family Applications (1)

Application Number Title Priority Date Filing Date
ES88401626T Expired - Lifetime ES2097109T3 (es) 1987-07-02 1988-06-27 Procedimiento de control del estado de conduccion de un transistor mos.

Country Status (5)

Country Link
EP (1) EP0298829B1 (es)
JP (1) JPH0821635B2 (es)
DE (1) DE3855682D1 (es)
ES (1) ES2097109T3 (es)
FR (1) FR2617637B1 (es)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2659171A1 (fr) * 1990-03-02 1991-09-06 Thomson Csf Circuit electrique pour hyperfrequence comprenant une couche de polymere.
JP2587323B2 (ja) * 1990-12-25 1997-03-05 小糸工業株式会社 座席用ヘッドレスト
GB2270795B (en) * 1992-09-18 1995-02-15 Texas Instruments Ltd Improvements in or relating to the trimming of integrated circuits
US7668125B2 (en) 2003-09-09 2010-02-23 Qualcomm Incorporated Incremental redundancy transmission for multiple parallel channels in a MIMO communication system

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4952980A (es) * 1972-09-22 1974-05-23
US4387503A (en) * 1981-08-13 1983-06-14 Mostek Corporation Method for programming circuit elements in integrated circuits
US4583201A (en) * 1983-09-08 1986-04-15 International Business Machines Corporation Resistor personalized memory device using a resistive gate fet
JPS6146045A (ja) * 1984-08-10 1986-03-06 Hitachi Ltd 半導体装置
FR2601500B1 (fr) * 1986-07-11 1988-10-21 Bull Sa Procede de liaison programmable par laser de deux conducteurs superposes du reseau d'interconnexion d'un circuit integre, et circuit integre en resultant

Also Published As

Publication number Publication date
DE3855682D1 (de) 1997-01-09
FR2617637A1 (fr) 1989-01-06
FR2617637B1 (fr) 1989-10-27
JPS6435949A (en) 1989-02-07
JPH0821635B2 (ja) 1996-03-04
EP0298829B1 (fr) 1996-11-27
EP0298829A1 (fr) 1989-01-11

Similar Documents

Publication Publication Date Title
KR870011696A (ko) 전원전압강하회로
DE3876388D1 (de) Spannungsregler mit zwei eingaengen mit niedrigem spannungsverlust.
DE3873839D1 (de) Mos-leistungstransistoranordnung.
DE58903906D1 (de) Redundanzdekoder eines integrierten halbleiterspeichers.
DE68926776D1 (de) Lateraler, bipolarer Transistor mit isolierter Steuerelektrode
ES2097109T3 (es) Procedimiento de control del estado de conduccion de un transistor mos.
ATE220228T1 (de) Integrierte halbleiter-speichervorrichtung mit redundanzschaltungsanordnung
ATE97770T1 (de) Einschaltruecksetzschaltungsanordnungen.
SE9100415L (sv) Fraankopplingsbar effekthalvledarkomponent
DE69210328D1 (de) Lateraler, bipolarer Halbleitertransistor mit isolierter Steuerelektrode
EP0373803A3 (en) R. f. switching circuits
DE3382251D1 (de) Halbleiterspeicheranordnung.
JPS553215A (en) Semiconductor switch circuit
DE3876359D1 (de) Isolierter gate-transistor, verwendbar bei niedriger drain-source-spannung.
DE3585015D1 (de) Bipolarer transistor-direktzugriffsspeicher mit redundanzkonfiguration.
ES521503A0 (es) Perfeccionamientos en una unidad de base para conjuntos de compuertas logicas de circuito integrado.
SE7901087L (sv) Halvledare
ATE96587T1 (de) Zweirichtungs-mos-schalter.
MY110261A (en) Bipolar bump transistor and method of manufacturing the same.
JPS6441312A (en) Semiconductor delay circuit device
JPS5715287A (en) Semiconductor memory
DE3881397D1 (de) Stromversorgungsschaltung mit netzausfall-ueberbrueckungsspeicher.
SE8804520L (sv) Transistorstyrd tyristor
JPS6418251A (en) Semiconductor device
JPS535584A (en) Semiconductor ic unit

Legal Events

Date Code Title Description
FG2A Definitive protection

Ref document number: 298829

Country of ref document: ES