EP4120375A3 - Magnetic tunneling junction device and memory device including the same - Google Patents
Magnetic tunneling junction device and memory device including the same Download PDFInfo
- Publication number
- EP4120375A3 EP4120375A3 EP22167361.9A EP22167361A EP4120375A3 EP 4120375 A3 EP4120375 A3 EP 4120375A3 EP 22167361 A EP22167361 A EP 22167361A EP 4120375 A3 EP4120375 A3 EP 4120375A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- tunneling junction
- magnetic
- layer
- magnetic tunneling
- junction device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005641 tunneling Effects 0.000 title abstract 4
- 239000002184 metal Substances 0.000 abstract 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 2
- 229910052760 oxygen Inorganic materials 0.000 abstract 2
- 239000001301 oxygen Substances 0.000 abstract 2
- 239000000696 magnetic material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
- H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F41/305—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices applying the spacer or adjusting its interface, e.g. in order to enable particular effect different from exchange coupling
- H01F41/307—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices applying the spacer or adjusting its interface, e.g. in order to enable particular effect different from exchange coupling insulating or semiconductive spacer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacturing & Machinery (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
Abstract
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020210093139A KR20230012370A (en) | 2021-07-15 | 2021-07-15 | Magnetic tunneling junction device and memory device including the smae |
Publications (2)
Publication Number | Publication Date |
---|---|
EP4120375A2 EP4120375A2 (en) | 2023-01-18 |
EP4120375A3 true EP4120375A3 (en) | 2023-05-03 |
Family
ID=81306925
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP22167361.9A Pending EP4120375A3 (en) | 2021-07-15 | 2022-04-08 | Magnetic tunneling junction device and memory device including the same |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP4120375A3 (en) |
KR (1) | KR20230012370A (en) |
CN (1) | CN115633537A (en) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130075839A1 (en) * | 2011-09-24 | 2013-03-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for a mram device with an oxygen absorbing cap layer |
US20130221460A1 (en) * | 2012-02-29 | 2013-08-29 | Headway Technologies, Inc. | Engineered Magnetic Layer with Improved Perpendicular Anisotropy using Glassing Agents for Spintronic Applications |
EP3347927B1 (en) * | 2015-09-08 | 2019-11-06 | Headway Technologies, Inc. | Magnetic element with perpendicular magnetic anisotropy for high coercivity after high temperature annealing |
US20200144494A1 (en) * | 2018-08-22 | 2020-05-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment Enhancement |
US20200158796A1 (en) * | 2018-11-16 | 2020-05-21 | Samsung Electronics Co., Ltd. | Hybrid oxide/metal cap layer for boron-free free layer |
-
2021
- 2021-07-15 KR KR1020210093139A patent/KR20230012370A/en unknown
-
2022
- 2022-04-08 EP EP22167361.9A patent/EP4120375A3/en active Pending
- 2022-07-14 CN CN202210831349.4A patent/CN115633537A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130075839A1 (en) * | 2011-09-24 | 2013-03-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for a mram device with an oxygen absorbing cap layer |
US20130221460A1 (en) * | 2012-02-29 | 2013-08-29 | Headway Technologies, Inc. | Engineered Magnetic Layer with Improved Perpendicular Anisotropy using Glassing Agents for Spintronic Applications |
EP3347927B1 (en) * | 2015-09-08 | 2019-11-06 | Headway Technologies, Inc. | Magnetic element with perpendicular magnetic anisotropy for high coercivity after high temperature annealing |
US20200144494A1 (en) * | 2018-08-22 | 2020-05-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment Enhancement |
US20200158796A1 (en) * | 2018-11-16 | 2020-05-21 | Samsung Electronics Co., Ltd. | Hybrid oxide/metal cap layer for boron-free free layer |
Also Published As
Publication number | Publication date |
---|---|
KR20230012370A (en) | 2023-01-26 |
CN115633537A (en) | 2023-01-20 |
EP4120375A2 (en) | 2023-01-18 |
US20230020056A1 (en) | 2023-01-19 |
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Ipc: G11C 11/16 20060101ALN20230328BHEP Ipc: H01F 10/32 20060101ALI20230328BHEP Ipc: H10N 50/85 20230101ALI20230328BHEP Ipc: H10N 50/10 20230101AFI20230328BHEP |
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