EP4120375A3 - Magnetic tunneling junction device and memory device including the same - Google Patents

Magnetic tunneling junction device and memory device including the same Download PDF

Info

Publication number
EP4120375A3
EP4120375A3 EP22167361.9A EP22167361A EP4120375A3 EP 4120375 A3 EP4120375 A3 EP 4120375A3 EP 22167361 A EP22167361 A EP 22167361A EP 4120375 A3 EP4120375 A3 EP 4120375A3
Authority
EP
European Patent Office
Prior art keywords
tunneling junction
magnetic
layer
magnetic tunneling
junction device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP22167361.9A
Other languages
German (de)
French (fr)
Other versions
EP4120375A2 (en
Inventor
Kwangseok Kim
Seonggeon Park
Seungjae Lee
Naoki Hase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of EP4120375A2 publication Critical patent/EP4120375A2/en
Publication of EP4120375A3 publication Critical patent/EP4120375A3/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00Galvanomagnetic devices
    • H10N50/10Magnetoresistive devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00Thin magnetic films, e.g. of one-domain structure
    • H01F10/32Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3286Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F41/305Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices applying the spacer or adjusting its interface, e.g. in order to enable particular effect different from exchange coupling
    • H01F41/307Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices applying the spacer or adjusting its interface, e.g. in order to enable particular effect different from exchange coupling insulating or semiconductive spacer
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B61/00Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B61/00Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00Galvanomagnetic devices
    • H10N50/80Constructional details
    • H10N50/85Magnetic active materials
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)

Abstract

Provided are a magnetic tunneling junction device (100a) having more stable perpendicular magnetic anisotropy (PMA) and/or increased operating speed, and/or a memory device including the magnetic tunneling junction device. The magnetic tunneling junction device includes a free layer (103) having a first surface and a second surface opposite the first surface; a pinned layer (101) facing the first surface of the free layer; a first oxide layer (102) between the pinned layer and the free layer; and a second oxide layer (104) on the second surface of the free layer. The free layer includes a magnetic material X doped with a non-magnetic metal. The second oxide layer includes ZOx which is an oxide of a metal Z. An oxygen affinity of the metal Z is greater than an oxygen affinity of the non-magnetic metal X.
EP22167361.9A 2021-07-15 2022-04-08 Magnetic tunneling junction device and memory device including the same Pending EP4120375A3 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020210093139A KR20230012370A (en) 2021-07-15 2021-07-15 Magnetic tunneling junction device and memory device including the smae

Publications (2)

Publication Number Publication Date
EP4120375A2 EP4120375A2 (en) 2023-01-18
EP4120375A3 true EP4120375A3 (en) 2023-05-03

Family

ID=81306925

Family Applications (1)

Application Number Title Priority Date Filing Date
EP22167361.9A Pending EP4120375A3 (en) 2021-07-15 2022-04-08 Magnetic tunneling junction device and memory device including the same

Country Status (3)

Country Link
EP (1) EP4120375A3 (en)
KR (1) KR20230012370A (en)
CN (1) CN115633537A (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130075839A1 (en) * 2011-09-24 2013-03-28 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for a mram device with an oxygen absorbing cap layer
US20130221460A1 (en) * 2012-02-29 2013-08-29 Headway Technologies, Inc. Engineered Magnetic Layer with Improved Perpendicular Anisotropy using Glassing Agents for Spintronic Applications
EP3347927B1 (en) * 2015-09-08 2019-11-06 Headway Technologies, Inc. Magnetic element with perpendicular magnetic anisotropy for high coercivity after high temperature annealing
US20200144494A1 (en) * 2018-08-22 2020-05-07 Taiwan Semiconductor Manufacturing Company, Ltd. Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment Enhancement
US20200158796A1 (en) * 2018-11-16 2020-05-21 Samsung Electronics Co., Ltd. Hybrid oxide/metal cap layer for boron-free free layer

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130075839A1 (en) * 2011-09-24 2013-03-28 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for a mram device with an oxygen absorbing cap layer
US20130221460A1 (en) * 2012-02-29 2013-08-29 Headway Technologies, Inc. Engineered Magnetic Layer with Improved Perpendicular Anisotropy using Glassing Agents for Spintronic Applications
EP3347927B1 (en) * 2015-09-08 2019-11-06 Headway Technologies, Inc. Magnetic element with perpendicular magnetic anisotropy for high coercivity after high temperature annealing
US20200144494A1 (en) * 2018-08-22 2020-05-07 Taiwan Semiconductor Manufacturing Company, Ltd. Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment Enhancement
US20200158796A1 (en) * 2018-11-16 2020-05-21 Samsung Electronics Co., Ltd. Hybrid oxide/metal cap layer for boron-free free layer

Also Published As

Publication number Publication date
KR20230012370A (en) 2023-01-26
CN115633537A (en) 2023-01-20
EP4120375A2 (en) 2023-01-18
US20230020056A1 (en) 2023-01-19

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