EP3669398A4 - Three-dimensional memory device containing bonded chip assembly with through-substrate via structures and method of making the same - Google Patents
Three-dimensional memory device containing bonded chip assembly with through-substrate via structures and method of making the same Download PDFInfo
- Publication number
- EP3669398A4 EP3669398A4 EP18910814.5A EP18910814A EP3669398A4 EP 3669398 A4 EP3669398 A4 EP 3669398A4 EP 18910814 A EP18910814 A EP 18910814A EP 3669398 A4 EP3669398 A4 EP 3669398A4
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- European Patent Office
- Prior art keywords
- making
- memory device
- same
- device containing
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- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
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- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
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- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
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- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
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- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H01L24/10—Bump connectors ; Manufacturing methods related thereto
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- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
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- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
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- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
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Applications Claiming Priority (3)
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US15/928,407 US10354980B1 (en) | 2018-03-22 | 2018-03-22 | Three-dimensional memory device containing bonded chip assembly with through-substrate via structures and method of making the same |
US15/928,340 US10354987B1 (en) | 2018-03-22 | 2018-03-22 | Three-dimensional memory device containing bonded chip assembly with through-substrate via structures and method of making the same |
PCT/US2018/062107 WO2019182657A1 (en) | 2018-03-22 | 2018-11-20 | Three-dimensional memory device containing bonded chip assembly with through-substrate via structures and method of making the same |
Publications (2)
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EP3669398A1 EP3669398A1 (en) | 2020-06-24 |
EP3669398A4 true EP3669398A4 (en) | 2021-09-01 |
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KR (1) | KR102297701B1 (en) |
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US11362108B2 (en) * | 2020-01-30 | 2022-06-14 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure with a logic device and a memory device being formed in different levels, and method of forming the same |
KR20210100235A (en) * | 2020-02-05 | 2021-08-17 | 에스케이하이닉스 주식회사 | Semiconductor memory device |
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CN114730772A (en) * | 2020-03-25 | 2022-07-08 | 桑迪士克科技有限责任公司 | Bonded three-dimensional memory device and method of manufacturing the same by replacing carrier substrate with source layer |
US11430950B2 (en) | 2020-03-27 | 2022-08-30 | Micron Technology, Inc. | Low resistance via contacts in a memory device |
JP7328349B2 (en) * | 2020-04-14 | 2023-08-16 | 長江存儲科技有限責任公司 | Three-dimensional memory device with backside source contact |
US11563018B2 (en) | 2020-06-18 | 2023-01-24 | Micron Technology, Inc. | Microelectronic devices, and related methods, memory devices, and electronic systems |
US11380669B2 (en) | 2020-06-18 | 2022-07-05 | Micron Technology, Inc. | Methods of forming microelectronic devices |
US11335602B2 (en) | 2020-06-18 | 2022-05-17 | Micron Technology, Inc. | Methods of forming microelectronic devices, and related microelectronic devices and electronic systems |
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US11699652B2 (en) | 2020-06-18 | 2023-07-11 | Micron Technology, Inc. | Microelectronic devices and electronic systems |
US11705367B2 (en) * | 2020-06-18 | 2023-07-18 | Micron Technology, Inc. | Methods of forming microelectronic devices, and related microelectronic devices, memory devices, electronic systems, and additional methods |
US11729997B2 (en) | 2020-06-29 | 2023-08-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | 3D stackable memory and methods of manufacture |
CN111785726B (en) * | 2020-07-07 | 2021-04-13 | 长江存储科技有限责任公司 | Circuit chip, three-dimensional memory and method for preparing three-dimensional memory |
KR20230002798A (en) | 2020-07-31 | 2023-01-05 | 양쯔 메모리 테크놀로지스 씨오., 엘티디. | Method for forming a contact structure and semiconductor device thereof |
KR20220022157A (en) * | 2020-08-18 | 2022-02-25 | 에스케이하이닉스 주식회사 | Memory device with pass transistors |
CN111952318A (en) * | 2020-08-20 | 2020-11-17 | 长江存储科技有限责任公司 | Three-dimensional memory and manufacturing method thereof |
US11417676B2 (en) | 2020-08-24 | 2022-08-16 | Micron Technology, Inc. | Methods of forming microelectronic devices and memory devices, and related microelectronic devices, memory devices, and electronic systems |
US11825658B2 (en) | 2020-08-24 | 2023-11-21 | Micron Technology, Inc. | Methods of forming microelectronic devices and memory devices |
US11296113B2 (en) | 2020-08-31 | 2022-04-05 | Sandisk Technologies Llc | Three-dimensional memory device with vertical field effect transistors and method of making thereof |
WO2022046239A1 (en) * | 2020-08-31 | 2022-03-03 | Sandisk Technologies Llc | Three-dimensional memory device with vertical field effect transistors and method of making thereof |
US11569215B2 (en) | 2020-08-31 | 2023-01-31 | Sandisk Technologies Llc | Three-dimensional memory device with vertical field effect transistors and method of making thereof |
US11963352B2 (en) | 2020-08-31 | 2024-04-16 | Sandisk Technologies Llc | Three-dimensional memory device with vertical field effect transistors and method of making thereof |
CN112204734A (en) * | 2020-09-02 | 2021-01-08 | 长江存储科技有限责任公司 | Pad structure of semiconductor device |
JP2022050956A (en) * | 2020-09-18 | 2022-03-31 | キオクシア株式会社 | Semiconductor storage device |
CN112289797A (en) * | 2020-10-28 | 2021-01-29 | 长江存储科技有限责任公司 | Peripheral circuit and three-dimensional memory |
US11751408B2 (en) | 2021-02-02 | 2023-09-05 | Micron Technology, Inc. | Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems |
CN112909013B (en) * | 2021-03-18 | 2022-02-18 | 长江存储科技有限责任公司 | Three-dimensional memory and method for preparing three-dimensional memory |
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- 2018-11-20 CN CN201880068190.7A patent/CN111247636B/en active Active
- 2018-11-20 EP EP18910814.5A patent/EP3669398A4/en active Pending
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CN111247636A (en) | 2020-06-05 |
KR20200037444A (en) | 2020-04-08 |
EP3669398A1 (en) | 2020-06-24 |
WO2019182657A1 (en) | 2019-09-26 |
CN111247636B (en) | 2024-04-19 |
KR102297701B1 (en) | 2021-09-06 |
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