EP3619738A4 - High power mmic devices having bypassed gate transistors - Google Patents
High power mmic devices having bypassed gate transistors Download PDFInfo
- Publication number
- EP3619738A4 EP3619738A4 EP18795054.8A EP18795054A EP3619738A4 EP 3619738 A4 EP3619738 A4 EP 3619738A4 EP 18795054 A EP18795054 A EP 18795054A EP 3619738 A4 EP3619738 A4 EP 3619738A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- high power
- gate transistors
- mmic devices
- power mmic
- bypassed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Amplifiers (AREA)
- Electrodes Of Semiconductors (AREA)
- Microwave Amplifiers (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/587,830 US10128365B2 (en) | 2016-03-17 | 2017-05-05 | Bypassed gate transistors having improved stability |
US15/608,048 US9947616B2 (en) | 2016-03-17 | 2017-05-30 | High power MMIC devices having bypassed gate transistors |
PCT/US2018/030863 WO2018204622A1 (en) | 2017-05-05 | 2018-05-03 | High power mmic devices having bypassed gate transistors |
Publications (2)
Publication Number | Publication Date |
---|---|
EP3619738A1 EP3619738A1 (en) | 2020-03-11 |
EP3619738A4 true EP3619738A4 (en) | 2021-01-13 |
Family
ID=64016692
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP18795054.8A Pending EP3619738A4 (en) | 2017-05-05 | 2018-05-03 | High power mmic devices having bypassed gate transistors |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP3619738A4 (en) |
JP (3) | JP6929968B2 (en) |
CN (2) | CN116403982A (en) |
WO (1) | WO2018204622A1 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111370474B (en) * | 2020-04-23 | 2023-10-24 | 上海华虹宏力半导体制造有限公司 | Grid series resistor of trench gate device |
CN113851485B (en) * | 2020-06-28 | 2023-06-02 | 京东方科技集团股份有限公司 | Thin film transistor, grid electrode row driving circuit and array substrate |
EP4393009A1 (en) * | 2021-10-01 | 2024-07-03 | MACOM Technology Solutions Holdings, Inc. | Bypassed gate transistors having improved stability |
WO2023136121A1 (en) * | 2022-01-13 | 2023-07-20 | 住友電気工業株式会社 | Semiconductor device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01166564A (en) * | 1987-12-22 | 1989-06-30 | Nec Corp | High-power field-effect transistor |
US20130313653A1 (en) * | 2012-05-25 | 2013-11-28 | Infineon Technologies Austria Ag | MOS Transistor with Multi-finger Gate Electrode |
WO2016042861A1 (en) * | 2014-09-17 | 2016-03-24 | シャープ株式会社 | Compound semiconductor field effect transistor |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2884577B2 (en) * | 1988-10-19 | 1999-04-19 | 日本電気株式会社 | Field effect transistor |
EP0606350B1 (en) * | 1991-09-30 | 1998-05-13 | Luminis Pty. Limited | Gallium arsenide mesfet imager |
US5592006A (en) * | 1994-05-13 | 1997-01-07 | International Rectifier Corporation | Gate resistor for IGBT |
JPH1145891A (en) * | 1997-07-25 | 1999-02-16 | Toshiba Corp | High-frequency integrated circuit element |
US6023086A (en) * | 1997-09-02 | 2000-02-08 | Motorola, Inc. | Semiconductor transistor with stabilizing gate electrode |
JP3515886B2 (en) * | 1997-09-29 | 2004-04-05 | 三菱電機株式会社 | Semiconductor device and manufacturing method thereof |
JP3269475B2 (en) * | 1998-02-16 | 2002-03-25 | 日本電気株式会社 | Semiconductor device |
JP3373435B2 (en) * | 1998-06-25 | 2003-02-04 | 日本電信電話株式会社 | Resistive feedback transistor |
JP3542116B2 (en) * | 2000-09-29 | 2004-07-14 | ユーディナデバイス株式会社 | High frequency circuit |
JP3712111B2 (en) * | 2001-03-30 | 2005-11-02 | ユーディナデバイス株式会社 | Power amplification semiconductor device |
JP4361313B2 (en) * | 2003-05-08 | 2009-11-11 | 三菱電機株式会社 | High frequency power amplifier |
US7492235B2 (en) * | 2006-10-25 | 2009-02-17 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Transmission line transistor attenuator |
JP5106041B2 (en) | 2007-10-26 | 2012-12-26 | 株式会社東芝 | Semiconductor device |
JP5238633B2 (en) * | 2009-07-27 | 2013-07-17 | 株式会社東芝 | Semiconductor device |
US8212321B2 (en) * | 2009-10-30 | 2012-07-03 | Freescale Semiconductor, Inc. | Semiconductor device with feedback control |
JP2012182438A (en) * | 2011-02-08 | 2012-09-20 | Toshiba Corp | Semiconductor device |
WO2015178050A1 (en) * | 2014-05-21 | 2015-11-26 | シャープ株式会社 | Field effect transistor |
-
2018
- 2018-05-03 EP EP18795054.8A patent/EP3619738A4/en active Pending
- 2018-05-03 JP JP2019560218A patent/JP6929968B2/en active Active
- 2018-05-03 CN CN202310564820.2A patent/CN116403982A/en active Pending
- 2018-05-03 WO PCT/US2018/030863 patent/WO2018204622A1/en active Application Filing
- 2018-05-03 CN CN201880029743.8A patent/CN110582846B/en active Active
-
2021
- 2021-08-11 JP JP2021131203A patent/JP7242777B2/en active Active
-
2023
- 2023-03-08 JP JP2023035192A patent/JP2023081974A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01166564A (en) * | 1987-12-22 | 1989-06-30 | Nec Corp | High-power field-effect transistor |
US20130313653A1 (en) * | 2012-05-25 | 2013-11-28 | Infineon Technologies Austria Ag | MOS Transistor with Multi-finger Gate Electrode |
WO2016042861A1 (en) * | 2014-09-17 | 2016-03-24 | シャープ株式会社 | Compound semiconductor field effect transistor |
Also Published As
Publication number | Publication date |
---|---|
CN110582846A (en) | 2019-12-17 |
JP7242777B2 (en) | 2023-03-20 |
CN110582846B (en) | 2023-05-12 |
JP6929968B2 (en) | 2021-09-01 |
JP2020519025A (en) | 2020-06-25 |
JP2022002308A (en) | 2022-01-06 |
CN116403982A (en) | 2023-07-07 |
JP2023081974A (en) | 2023-06-13 |
EP3619738A1 (en) | 2020-03-11 |
WO2018204622A1 (en) | 2018-11-08 |
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Legal Events
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PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
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A4 | Supplementary search report drawn up and despatched |
Effective date: 20201215 |
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RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 29/423 20060101ALI20201209BHEP Ipc: H01L 29/40 20060101ALI20201209BHEP Ipc: H01L 29/739 20060101ALI20201209BHEP Ipc: H01L 23/482 20060101AFI20201209BHEP Ipc: H01L 29/43 20060101ALI20201209BHEP Ipc: H01L 29/778 20060101ALI20201209BHEP |
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