EP3570338A1 - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
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- EP3570338A1 EP3570338A1 EP19172553.0A EP19172553A EP3570338A1 EP 3570338 A1 EP3570338 A1 EP 3570338A1 EP 19172553 A EP19172553 A EP 19172553A EP 3570338 A1 EP3570338 A1 EP 3570338A1
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- magnetic sensing
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- semiconductor substrate
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 45
- 239000012535 impurity Substances 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 238000009792 diffusion process Methods 0.000 claims abstract description 18
- 230000007423 decrease Effects 0.000 claims abstract description 5
- 238000002955 isolation Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 description 10
- 238000009987 spinning Methods 0.000 description 7
- 230000035945 sensitivity Effects 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 230000001629 suppression Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/101—Semiconductor Hall-effect devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
- G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
- G01D5/142—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage using Hall-effect devices
- G01D5/145—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage using Hall-effect devices influenced by the relative movement between the Hall device and magnetic fields
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/07—Hall effect devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/07—Hall effect devices
- G01R33/072—Constructional adaptation of the sensor to specific applications
- G01R33/075—Hall devices configured for spinning current measurements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/07—Hall effect devices
- G01R33/077—Vertical Hall-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/80—Constructional details
Definitions
- the present invention relates to a semiconductor device, and more particularly, to a semiconductor device having a Hall element.
- a Hall element is capable of detecting position or angle without contact, and accordingly has various uses.
- an output voltage is generated even without an application of magnetic field.
- the voltage which is an output under a magnetic field of zero is called offset voltage. It is considered that the offset voltage is generated by imbalance in potential distribution inside the element caused by, for example, mechanical stress applied to the element from the outside or misalignment occurring in a manufacturing process. In case the Hall element is used as a magnetic sensor, it is required to remove such an offset voltage.
- a Hall element can be expressed in an equivalent circuit illustrated in FIG. 3 .
- the Hall element is expressed as a bridge circuit in which four terminals T1, T2, T3, and T4 are connected with four resistors R1, R2, R3, and R4.
- a voltage Vin is first applied between the terminals T1 and T2 with the terminals T1 and T2 being used as drive current supply electrodes, and the terminals T3 and T4 being used as Hall voltage output electrodes.
- An output voltage Vh+Vos is thereby generated between the terminals T3 and T4.
- the voltage Vin is applied between the terminals T3 and T4 with the terminals T3 and T4 being used as drive current supply electrodes, and the terminals T1 and T2 being used as Hall voltage output electrodes.
- An output voltage -Vh+Vos is thereby generated between the terminals T1 and T2.
- Vh denotes a Hall voltage of the Hall element that is proportional to a magnetic field
- Vos denotes an offset voltage.
- the offset voltage Vos is generated because resistances of the resistors R1, R2, R3, and R4 vary due to the imbalance in potential distribution inside the element but can be canceled through performing the spinning current method as described above.
- a peripheral portion surrounding an n-type impurity region which is a magnetic sensing portion of the Hall element is a p-type impurity region for separation from other regions (see WO 2007/116823 A1 ).
- the electric current does not flow through the depletion layer, the electric current is suppressed in a region in which the depletion layer extends in the magnetic sensing portion, and hence the resistance of the portion increases. Moreover, a width of the depletion layer changes depending on the voltage application direction, and hence the resistances of the resistors R1, R2, R3, and R4 of the equivalent circuit illustrated in FIG. 3 change depending on the voltage application direction. Hence the offset voltage cannot be canceled completely even by the execution of the spinning current method.
- a semiconductor device having: a semiconductor substrate of a first conductivity type; and a Hall element formed in the semiconductor substrate.
- the Hall element includes: a magnetic sensing portion formed of an impurity diffusion layer of a second conductivity type formed in the semiconductor substrate, and having four ends in plan view; and four electrodes provided at the respective four ends in a surface of the magnetic sensing portion, and each formed of an impurity diffusion layer of the second conductivity type having a concentration that is higher than a concentration of the magnetic sensing portion.
- the impurity diffusion layer forms the magnetic sensing portion having a first depth from a surface of the semiconductor substrate, has a first concentration gradient in which a concentration of impurities of the second conductivity type increases in a depth direction from the surface of the semiconductor substrate to a second depth which is shallower than the first depth, and has a second concentration gradient in which the concentration of the impurities of the second conductivity type decreases in the depth direction from the second depth to the first depth.
- the second depth is half the first depth or less, and the first concentration gradient is steeper than the second concentration gradient.
- the magnetic sensing portion having the first depth has an impurity concentration distribution having a peak at the second depth.
- the electric current concentrates and flows around the second depth portion having the highest impurity concentration in the magnetic sensing portion.
- the second depth being half the first depth or less, that is, being a shallow portion of the magnetic sensing portion, and the second concentration gradient S2 being mild, a portion extending on the magnetic sensing portion side of a depletion layer generated from the junction between the bottom portion of the magnetic sensing portion and the semiconductor substrate can be prevented from reaching the second depth.
- FIG. 1A and FIG. 1B are views for illustrating a semiconductor device having a Hall element 100 according to one embodiment of the present invention in which FIG. 1A is a plan view, and FIG. 1B is a cross-sectional view taken along the line L-L of FIG. 1A .
- the semiconductor device according to the embodiment includes a p-type (first conductivity type) semiconductor substrate 10, the Hall element 100 formed in the semiconductor substrate 10, and a p-type element isolation diffusion layer 50 formed to surround the periphery of the Hall element 100.
- the Hall element 100 is formed of an n-type (second conductivity type) impurity diffusion layer formed in the semiconductor substrate 10, and includes a magnetic sensing portion 20 having a square shape in plan view, and electrodes 31 to 34 which are provided at respective ends in a surface of the magnetic sensing portion 20, and are each formed of an n-type impurity region having a concentration that is higher than that of the magnetic sensing portion 20.
- an insulating film 40 for example, SiO 2 film, is formed on the surface of the magnetic sensing portion 20 to cover regions other than regions in which the electrodes 31 to 34 are formed.
- the magnetic sensing portion 20 has the first depth D1 from a surface of the semiconductor substrate 10, has the first concentration gradient S1 in which an n-type impurity concentration increases in a depth direction from the surface of the semiconductor substrate 10 to the second depth D2, which is shallower than the first depth D1, and the second concentration gradient S2 in which the n-type impurity concentration decreases in the depth direction from the second depth D2 to the first depth D1.
- the second depth D2 is half the first depth D1 or less, and the first concentration gradient S1 is steeper than the second concentration gradient S2.
- the magnetic sensing portion 20 having such a concentration distribution is obtained by introducing n-type impurities at the depth D2 in a region to form the magnetic sensing portion 20 of the semiconductor substrate 10 and diffusing the n-type impurities to the depth D1, for example.
- the depth D2 at which the n-type impurity concentration peaks is from 400 nm to 800 nm, and that the concentration is between 1 ⁇ 10 16 atoms/cm 3 and 1 ⁇ 10 17 atoms/cm 3 .
- the depth D1 of the magnetic sensing portion 20 is from about 2 ⁇ m to about 5 ⁇ m.
- the element isolation diffusion layer 50 is formed to be separated from the magnetic sensing portion 20 and electrically isolates the Hall element 100 from other regions (not shown) of the semiconductor substrate 10.
- n-wells are formed in at least a part of the regions.
- the n-wells and the magnetic sensing portion 20 which is the n-type impurity diffusion layer can be formed in common steps.
- the n-wells have thus the same depth and the same concentration distribution as those of the magnetic sensing portion 20. In this manner, according to the embodiment, the magnetic sensing portion 20 can be formed without increasing the number of manufacturing processes.
- the semiconductor device of the embodiment constituted as described above by the application of a voltage between the opposing electrodes 32 and 33 of the electrodes 31 to 34 to supply an electric current to the magnetic sensing portion 20, the electric current concentrates and flows through a portion at the second depth D2 which has the highest impurity concentration in the magnetic sensing portion 20.
- the second depth D2 being half the first depth D1 or less, that is, being a shallow portion in the magnetic sensing portion 20, and having the mild second concentration gradient S2 described above, a portion extending on the magnetic sensing portion 20 side of a depletion layer generated from the junction between the bottom portion of the n-type magnetic sensing portion 20 and the p-type semiconductor substrate 10 can be prevented from reaching the second depth D2.
- the p-type element isolation diffusion layer 50 and the n-type magnetic sensing portion 20 being separated from each other, and the p-type semiconductor substrate 10 having a concentration that is lower than that of the element isolation diffusion layer 50 being interposed between the element isolation diffusion layer 50 and the magnetic sensing portion 20, extension in a lateral direction of the depletion layer to the magnetic sensing portion 20 can also be suppressed, and the depletion layer can be prevented from affecting the electric current flowing through the magnetic sensing portion 20.
- the effect of making the Hall element 100 have high sensitivity and low noise can also be obtained. The reason is described below.
- the sensitivity of a Hall element can be increased by increasing the electron mobility of the magnetic sensing portion.
- it is required to decrease the impurity concentration of the magnetic sensing portion of the Hall element.
- the n-type impurity concentration near the surface of the magnetic sensing portion 20 is very small, and a very small electric current thus flows therethrough.
- a very small electric current flows near the surface of the magnetic sensing portion 20, and hence a reduction in sensitivity can be prevented.
- the insulating film 40 is formed to cover the regions other than the regions in which the electrodes 31 to 34 are formed in the surface of the magnetic sensing portion 20 as described above. As a result, the electric current can be prevented more reliably from flowing through the region having low electron mobility at the surface of the magnetic sensing portion 20. As a result, the reduction in sensitivity can be suppressed.
- the electron mobility can be increased, and the sensitivity can be increased.
- the concentration of the magnetic sensing portion 20 is set to be relatively low to increase the electron mobility as described above, but with the depth of the magnetic sensing portion 20 being from about 2 ⁇ m to about 5 ⁇ m, which is relatively deep, in correspondence thereto, the sheet resistance of the Hall element 100 can be decreased, the ratio of noise to the output signal of the Hall element 100 is reduced, and stable output can be obtained.
- the first conductivity type and the second conductivity type which are the P type and the N type, respectively, in the above-mentioned embodiment, may be switched so that the first conductivity type represents the N type while the second conductivity type represents the P type.
- the magnetic sensing portion 20 has a square shape in plan view.
- the shape of the magnetic sensing portion 20 is not limited thereto and may be a cross shape as illustrated in FIG. 2 , for example.
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
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- Measuring Magnetic Variables (AREA)
Abstract
Description
- The present invention relates to a semiconductor device, and more particularly, to a semiconductor device having a Hall element.
- As a magnetic sensor a Hall element is capable of detecting position or angle without contact, and accordingly has various uses.
- In an actual Hall element, an output voltage is generated even without an application of magnetic field. The voltage which is an output under a magnetic field of zero is called offset voltage. It is considered that the offset voltage is generated by imbalance in potential distribution inside the element caused by, for example, mechanical stress applied to the element from the outside or misalignment occurring in a manufacturing process. In case the Hall element is used as a magnetic sensor, it is required to remove such an offset voltage.
- In order to remove or cancel the offset voltage, a spinning current method is generally used.
- A Hall element can be expressed in an equivalent circuit illustrated in
FIG. 3 . Specifically, the Hall element is expressed as a bridge circuit in which four terminals T1, T2, T3, and T4 are connected with four resistors R1, R2, R3, and R4. - In a circuit described above, in order to perform the spinning current method, a voltage Vin is first applied between the terminals T1 and T2 with the terminals T1 and T2 being used as drive current supply electrodes, and the terminals T3 and T4 being used as Hall voltage output electrodes. An output voltage Vh+Vos is thereby generated between the terminals T3 and T4. Next, the voltage Vin is applied between the terminals T3 and T4 with the terminals T3 and T4 being used as drive current supply electrodes, and the terminals T1 and T2 being used as Hall voltage output electrodes. An output voltage -Vh+Vos is thereby generated between the terminals T1 and T2. Here, Vh denotes a Hall voltage of the Hall element that is proportional to a magnetic field, and Vos denotes an offset voltage.
- Through subtraction (or addition) of the output voltages obtained by supplying the electric currents flowing in the above-mentioned two directions, the offset voltage Vos is canceled, and an output voltage 2Vh that is proportional to the magnetic field can be obtained.
- The offset voltage Vos is generated because resistances of the resistors R1, R2, R3, and R4 vary due to the imbalance in potential distribution inside the element but can be canceled through performing the spinning current method as described above.
- However, in case the resistances of the resistors R1, R2, R3, and R4 change depending on the voltage application direction, the offset voltage cannot be fully removed.
- In a general Hall element, a peripheral portion surrounding an n-type impurity region which is a magnetic sensing portion of the Hall element is a p-type impurity region for separation from other regions (see
WO 2007/116823 A1 ). By the application of a voltage to the drive current supply electrodes to supply an electric current to the magnetic sensing portion, a depletion layer extends along the boundary between the magnetic sensing portion of the Hall element and the peripheral portion thereof. - Because the electric current does not flow through the depletion layer, the electric current is suppressed in a region in which the depletion layer extends in the magnetic sensing portion, and hence the resistance of the portion increases. Moreover, a width of the depletion layer changes depending on the voltage application direction, and hence the resistances of the resistors R1, R2, R3, and R4 of the equivalent circuit illustrated in
FIG. 3 change depending on the voltage application direction. Hence the offset voltage cannot be canceled completely even by the execution of the spinning current method. - To address the above-mentioned problem, in Japanese Patent Application Laid-open No.
H 08-330646 - However, in the method according to Japanese Patent Application Laid-open No.
H 08-330646 - It is an object of the present invention to provide a semiconductor device including a Hall element which is capable of accurately removing an offset voltage without using a complicated control circuit.
- In one embodiment of the present invention there is provided a semiconductor device having: a semiconductor substrate of a first conductivity type; and a Hall element formed in the semiconductor substrate.
- The Hall element includes: a magnetic sensing portion formed of an impurity diffusion layer of a second conductivity type formed in the semiconductor substrate, and having four ends in plan view; and four electrodes provided at the respective four ends in a surface of the magnetic sensing portion, and each formed of an impurity diffusion layer of the second conductivity type having a concentration that is higher than a concentration of the magnetic sensing portion.
- The impurity diffusion layer forms the magnetic sensing portion having a first depth from a surface of the semiconductor substrate, has a first concentration gradient in which a concentration of impurities of the second conductivity type increases in a depth direction from the surface of the semiconductor substrate to a second depth which is shallower than the first depth, and has a second concentration gradient in which the concentration of the impurities of the second conductivity type decreases in the depth direction from the second depth to the first depth.
- The second depth is half the first depth or less, and the first concentration gradient is steeper than the second concentration gradient.
- According to the present invention, the magnetic sensing portion having the first depth has an impurity concentration distribution having a peak at the second depth. As a result, when a voltage is applied between two opposing electrodes of the four electrodes to supply an electric current to the magnetic sensing portion, the electric current concentrates and flows around the second depth portion having the highest impurity concentration in the magnetic sensing portion. With the second depth being half the first depth or less, that is, being a shallow portion of the magnetic sensing portion, and the second concentration gradient S2 being mild, a portion extending on the magnetic sensing portion side of a depletion layer generated from the junction between the bottom portion of the magnetic sensing portion and the semiconductor substrate can be prevented from reaching the second depth. Thus, it is possible to prevent suppression of the electric current by the depletion layer which increases the resistance. In other words, resistances among the electrodes can be prevented from changing between the application of the voltage between one pair of opposing electrodes of the four electrodes and the application of the voltage between the other pair of opposing electrodes. Accordingly, the offset voltage can be removed accurately by the spinning current method. Moreover, it is not required to use a depletion layer suppression electrode or a complicated circuit, with the result that a chip size can be reduced, and the cost can be suppressed.
- Embodiments of the present invention will now be described by way of further example only and with reference to the accompanying drawings, in which:
-
FIG. 1A is a plan view of a semiconductor device having a Hall element according to an embodiment of the present invention. -
FIG. 1B is a cross-sectional view taken along the line L-L ofFIG. 1A . -
FIG. 2 is a plan view for illustrating another example of the Hall element illustrated inFIG. 1A . -
FIG. 3 is an equivalent circuit diagram of a Hall element. - The invention will be now described herein with reference to illustrative embodiments.
-
FIG. 1A and FIG. 1B are views for illustrating a semiconductor device having aHall element 100 according to one embodiment of the present invention in whichFIG. 1A is a plan view, andFIG. 1B is a cross-sectional view taken along the line L-L ofFIG. 1A . As illustrated inFIG. 1A and FIG. 1B , the semiconductor device according to the embodiment includes a p-type (first conductivity type)semiconductor substrate 10, theHall element 100 formed in thesemiconductor substrate 10, and a p-type elementisolation diffusion layer 50 formed to surround the periphery of theHall element 100. - The
Hall element 100 is formed of an n-type (second conductivity type) impurity diffusion layer formed in thesemiconductor substrate 10, and includes amagnetic sensing portion 20 having a square shape in plan view, andelectrodes 31 to 34 which are provided at respective ends in a surface of themagnetic sensing portion 20, and are each formed of an n-type impurity region having a concentration that is higher than that of themagnetic sensing portion 20. - Moreover, in the
Hall element 100, an insulatingfilm 40, for example, SiO2 film, is formed on the surface of themagnetic sensing portion 20 to cover regions other than regions in which theelectrodes 31 to 34 are formed. - On the right side of
FIG. 1B , a concentration profile of impurities contained in the p-type semiconductor substrate 10 and the n-typemagnetic sensing portion 20 is shown. - As can be seen from the concentration profile, the
magnetic sensing portion 20 has the first depth D1 from a surface of thesemiconductor substrate 10, has the first concentration gradient S1 in which an n-type impurity concentration increases in a depth direction from the surface of thesemiconductor substrate 10 to the second depth D2, which is shallower than the first depth D1, and the second concentration gradient S2 in which the n-type impurity concentration decreases in the depth direction from the second depth D2 to the first depth D1. - Moreover, the second depth D2 is half the first depth D1 or less, and the first concentration gradient S1 is steeper than the second concentration gradient S2.
- The
magnetic sensing portion 20 having such a concentration distribution is obtained by introducing n-type impurities at the depth D2 in a region to form themagnetic sensing portion 20 of thesemiconductor substrate 10 and diffusing the n-type impurities to the depth D1, for example. - It is desired that the depth D2 at which the n-type impurity concentration peaks is from 400 nm to 800 nm, and that the concentration is between 1×1016 atoms/cm3 and 1×1017 atoms/cm3. Moreover, it is desired that the depth D1 of the
magnetic sensing portion 20 is from about 2 µm to about 5 µm. - The element
isolation diffusion layer 50 is formed to be separated from themagnetic sensing portion 20 and electrically isolates theHall element 100 from other regions (not shown) of thesemiconductor substrate 10. - In the other regions (not shown) of the
semiconductor substrate 10 which are electrically isolated from theHall element 100 by the p-type elementisolation diffusion layer 50, transistors and other elements forming a circuit are provided to process an output signal from theHall element 100, or to supply a signal to theHall element 100. In order to form such an element, n-wells are formed in at least a part of the regions. The n-wells and themagnetic sensing portion 20 which is the n-type impurity diffusion layer can be formed in common steps. The n-wells have thus the same depth and the same concentration distribution as those of themagnetic sensing portion 20. In this manner, according to the embodiment, themagnetic sensing portion 20 can be formed without increasing the number of manufacturing processes. - According to the semiconductor device of the embodiment constituted as described above, by the application of a voltage between the opposing
electrodes electrodes 31 to 34 to supply an electric current to themagnetic sensing portion 20, the electric current concentrates and flows through a portion at the second depth D2 which has the highest impurity concentration in themagnetic sensing portion 20. With the second depth D2 being half the first depth D1 or less, that is, being a shallow portion in themagnetic sensing portion 20, and having the mild second concentration gradient S2 described above, a portion extending on themagnetic sensing portion 20 side of a depletion layer generated from the junction between the bottom portion of the n-typemagnetic sensing portion 20 and the p-type semiconductor substrate 10 can be prevented from reaching the second depth D2. As a result, it is possible to prevent suppression of the electric current by the existence of the depletion layer which increases the resistance of a path through which the electric current flows. In other words, it is possible to prevent a change in resistance between the application of a voltage between the opposingelectrodes electrodes 31 to 34 and the application of a voltage between the opposingelectrodes - Further, according to the embodiment, with the p-type element
isolation diffusion layer 50 and the n-typemagnetic sensing portion 20 being separated from each other, and the p-type semiconductor substrate 10 having a concentration that is lower than that of the elementisolation diffusion layer 50 being interposed between the elementisolation diffusion layer 50 and themagnetic sensing portion 20, extension in a lateral direction of the depletion layer to themagnetic sensing portion 20 can also be suppressed, and the depletion layer can be prevented from affecting the electric current flowing through themagnetic sensing portion 20. - Moreover, it is not required to use a depletion layer suppression electrode or a complicated circuit, with the result that a chip size can be reduced, and the cost can be suppressed.
- Further, according to the embodiment, in addition to the above-mentioned effects, the effect of making the
Hall element 100 have high sensitivity and low noise can also be obtained. The reason is described below. - It is known that the sensitivity of a Hall element can be increased by increasing the electron mobility of the magnetic sensing portion. In other words, in order to achieve high sensitivity of the Hall element, it is required to decrease the impurity concentration of the magnetic sensing portion of the Hall element.
- Meanwhile, in the Hall element, as a sheet resistance thereof is reduced, a noise ratio with respect to the output of the Hall element is reduced.
- With the
magnetic sensing portion 20 having the first concentration gradient S1 in which the n-type impurity concentration is increased in the depth direction from the surface of thesemiconductor substrate 10 to the second depth D2 as described above, the n-type impurity concentration near the surface of themagnetic sensing portion 20 is very small, and a very small electric current thus flows therethrough. Near the surface of the semiconductor substrate 10 (magnetic sensing portion 20), an interface state density and a lattice defect exist, and the electron mobility is thus reduced. However, according to the embodiment, a very small electric current flows near the surface of themagnetic sensing portion 20, and hence a reduction in sensitivity can be prevented. - Further, in the
Hall element 100, the insulatingfilm 40 is formed to cover the regions other than the regions in which theelectrodes 31 to 34 are formed in the surface of themagnetic sensing portion 20 as described above. As a result, the electric current can be prevented more reliably from flowing through the region having low electron mobility at the surface of themagnetic sensing portion 20. As a result, the reduction in sensitivity can be suppressed. - Moreover, with the maximum peak concentration of the
magnetic sensing portion 20 being from about 1×1016 atoms/cm3 to about 1×1017 atoms/cm3, which is not very high, the electron mobility can be increased, and the sensitivity can be increased. - Further, the concentration of the
magnetic sensing portion 20 is set to be relatively low to increase the electron mobility as described above, but with the depth of themagnetic sensing portion 20 being from about 2 µm to about 5 µm, which is relatively deep, in correspondence thereto, the sheet resistance of theHall element 100 can be decreased, the ratio of noise to the output signal of theHall element 100 is reduced, and stable output can be obtained. - It is apparent that the present invention is not limited to the above embodiments but may be modified and changed without departing from the scope of the invention.
- For example, the first conductivity type and the second conductivity type, which are the P type and the N type, respectively, in the above-mentioned embodiment, may be switched so that the first conductivity type represents the N type while the second conductivity type represents the P type.
- Moreover, in the above-mentioned embodiment, there has been described the example in which the
magnetic sensing portion 20 has a square shape in plan view. However, the shape of themagnetic sensing portion 20 is not limited thereto and may be a cross shape as illustrated inFIG. 2 , for example.
Claims (6)
- A semiconductor device, comprising:a semiconductor substrate (10) of a first conductivity type; anda Hall element (100) formed in the semiconductor substrate,the Hall element comprising:a magnetic sensing portion (20) formed of an impurity diffusion layer of a second conductivity type formed in the semiconductor substrate, and having four ends in plan view; andfour electrodes (31-34) provided at the respective four ends in a surface of the magnetic sensing portion, and each formed of an impurity diffusion layer of the second conductivity type having a concentration that is higher than a concentration of the magnetic sensing portion,the impurity diffusion layer which forms the magnetic sensing portion having a first depth (D1) from a surface of the semiconductor substrate, having a first concentration gradient (S1) in which a concentration of impurities of the second conductivity type increases in a depth direction from the surface of the semiconductor substrate to a second depth (D2) which is shallower than the first depth, and having a second concentration gradient (S2) in which the concentration of the impurities of the second conductivity type decreases in the depth direction from the second depth to the first depth, the second depth being half the first depth or less, the first concentration gradient being steeper than the second concentration gradient.
- The semiconductor device according to claim 1, wherein the concentration of the impurities of the second conductivity type in the magnetic sensing portion (20) has a peak between depths of 400 nm and 800 nm from the surface of the semiconductor substrate, the concentration at the peak being from 1×1016 atoms/cm3 to 1×1017 atoms/cm3, the magnetic sensing portion having a depth of from 2 µm to 5 µm.
- The semiconductor device according to claim 1 or claim 2, wherein the magnetic sensing portion has one of a square shape and a cross shape in plan view.
- The semiconductor device according to according to any one of the preceding claims, further comprising an element isolation diffusion layer (50) of the first conductivity type formed in the semiconductor substrate so as to surround a periphery of the magnetic sensing portion and to be separated from the magnetic sensing portion, the element isolation diffusion layer having a concentration that is higher than a concentration of the semiconductor substrate.
- The semiconductor device according to according to any one of the preceding claims, wherein the surface of the magnetic sensing portion is covered with an insulating film (40) except for regions in which the four electrodes (31-34) are provided.
- The semiconductor device according to claim 5, wherein the surface of the semiconductor substrate is also covered with an insulating film.
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JP2018094526A JP2019201097A (en) | 2018-05-16 | 2018-05-16 | Semiconductor device |
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EP3570338A1 true EP3570338A1 (en) | 2019-11-20 |
EP3570338B1 EP3570338B1 (en) | 2020-12-23 |
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EP19172553.0A Active EP3570338B1 (en) | 2018-05-16 | 2019-05-03 | Semiconductor device |
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US (1) | US20190355899A1 (en) |
EP (1) | EP3570338B1 (en) |
JP (1) | JP2019201097A (en) |
KR (1) | KR20190131438A (en) |
CN (1) | CN110504353A (en) |
TW (1) | TW201947794A (en) |
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JP4674578B2 (en) * | 2006-01-13 | 2011-04-20 | 株式会社デンソー | Magnetic sensor and magnetic detection method |
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US9217783B2 (en) * | 2012-09-13 | 2015-12-22 | Infineon Technologies Ag | Hall effect device |
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2018
- 2018-05-16 JP JP2018094526A patent/JP2019201097A/en active Pending
-
2019
- 2019-05-03 EP EP19172553.0A patent/EP3570338B1/en active Active
- 2019-05-13 TW TW108116453A patent/TW201947794A/en unknown
- 2019-05-14 KR KR1020190056542A patent/KR20190131438A/en unknown
- 2019-05-15 US US16/413,029 patent/US20190355899A1/en not_active Abandoned
- 2019-05-15 CN CN201910401649.7A patent/CN110504353A/en active Pending
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JPS6370583A (en) * | 1986-09-12 | 1988-03-30 | Asahi Glass Co Ltd | Gallium arsenide hall element |
JPH08330646A (en) | 1995-03-30 | 1996-12-13 | Toshiba Corp | Lateral hall element |
WO2007116823A1 (en) | 2006-04-03 | 2007-10-18 | Asahi Kasei Emd Corporation | Hall element and magnetic sensor |
US8564083B2 (en) * | 2011-03-24 | 2013-10-22 | Melexis Technologies Nv | Vertical hall sensor and method for producing a vertical hall sensor |
US20140264667A1 (en) * | 2013-03-15 | 2014-09-18 | Allegro Microsystems, Inc. | Vertical Hall Effect Element With Structures to Improve Sensitivity |
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US20190355899A1 (en) | 2019-11-21 |
CN110504353A (en) | 2019-11-26 |
EP3570338B1 (en) | 2020-12-23 |
KR20190131438A (en) | 2019-11-26 |
TW201947794A (en) | 2019-12-16 |
JP2019201097A (en) | 2019-11-21 |
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