EP3559304A1 - Linear vapor source - Google Patents
Linear vapor sourceInfo
- Publication number
- EP3559304A1 EP3559304A1 EP17816650.0A EP17816650A EP3559304A1 EP 3559304 A1 EP3559304 A1 EP 3559304A1 EP 17816650 A EP17816650 A EP 17816650A EP 3559304 A1 EP3559304 A1 EP 3559304A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- crucible
- nozzle
- roll
- evaporated
- evaporation source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001704 evaporation Methods 0.000 claims abstract description 135
- 230000008020 evaporation Effects 0.000 claims abstract description 135
- 239000000463 material Substances 0.000 claims abstract description 82
- 238000007740 vapor deposition Methods 0.000 claims abstract description 30
- 230000004907 flux Effects 0.000 claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- 239000010409 thin film Substances 0.000 claims abstract description 10
- 238000010438 heat treatment Methods 0.000 claims description 92
- 238000000151 deposition Methods 0.000 claims description 53
- 230000008021 deposition Effects 0.000 claims description 51
- 239000010408 film Substances 0.000 claims description 17
- 238000001771 vacuum deposition Methods 0.000 claims description 14
- 229910052733 gallium Inorganic materials 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000011888 foil Substances 0.000 claims description 10
- 229910052738 indium Inorganic materials 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- 238000005304 joining Methods 0.000 claims description 5
- 229920000642 polymer Polymers 0.000 claims description 5
- 230000001747 exhibiting effect Effects 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 238000009826 distribution Methods 0.000 abstract description 13
- 239000000758 substrate Substances 0.000 description 33
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 22
- 239000012768 molten material Substances 0.000 description 13
- 239000010949 copper Substances 0.000 description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 10
- 230000008901 benefit Effects 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 229910002804 graphite Inorganic materials 0.000 description 9
- 239000010439 graphite Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 239000000155 melt Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000001105 regulatory effect Effects 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 238000000429 assembly Methods 0.000 description 4
- 230000000712 assembly Effects 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 239000006096 absorbing agent Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 239000011819 refractory material Substances 0.000 description 3
- 239000011669 selenium Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 229920005570 flexible polymer Polymers 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052863 mullite Inorganic materials 0.000 description 2
- 239000000615 nonconductor Substances 0.000 description 2
- 238000013021 overheating Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 150000003346 selenoethers Chemical class 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- -1 steatite Inorganic materials 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 239000011364 vaporized material Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 101000801645 Homo sapiens ATP-binding cassette sub-family A member 2 Proteins 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 102100024540 Nonsense-mediated mRNA decay factor SMG8 Human genes 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052795 boron group element Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- PCRGAMCZHDYVOL-UHFFFAOYSA-N copper selanylidenetin zinc Chemical compound [Cu].[Zn].[Sn]=[Se] PCRGAMCZHDYVOL-UHFFFAOYSA-N 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
Definitions
- the present invention relates to linear evaporation sources used for vapor deposition of material onto substrates and more particularly for controlled material coating of large substrates, such as vacuum deposition on large sheets or using roll-to-roll processes.
- the present invention relates to linear evaporation sources usable for vapor deposition of In, Ga and Cu for controlled material coating of large flexible substrates in vacuum using the roll-to-roll process for the production of thin films of CIGS (Cu(ln,Ga)Se2, copper indium gallium di selenide).
- CIGS thin film means a CIGS film exhibiting a thickness between 50 and 0.1 micrometers, most preferably between 5 and 0.5 micrometers.
- a further problem in the field of thermal vapor deposition during long deposition cycles relates to the falling of material flakes or other particles into the evaporation source. It is therefore also an object of the current invention to provide an evaporation source that prevents problems associated with falling material flakes.
- high output evaporation source means an evaporation source capable to depose per unitary length a material flux higher than 5 nm cm/s, preferably higher than 100 nm cm/s, most preferably higher than 150 nm cm/s, so as to be suited to coat large webs and foils in an industrial roll-to-roll manufacturing coating step with acceptable speed.
- said at least one nozzle is inclined, and has a flux-wise axis that is oriented at between +30 degrees and +80 degrees with respect to the plane supporting the base of at least one nozzle, preferably between +40 and +70 degrees, most preferably between +45 and +60 degrees, so as to direct the evaporated flux away from the orthogonal to said base.
- said at least one nozzle exhibits a channel having a flux-wise axis, said channel exhibiting a length longer than its width, preferably longer than two times its width, more preferably longer than three times its width, and exhibits a divergent cross section, i.e. a cross-section along a plane containing the flux- wise axis larger at the nozzle outlet than at the nozzle inlet, so as to be configured to convey the evaporated material on the largest possible surface of the adjacent thin web.
- the web may exhibit different slopes and orientations in respect to the ground, and the at least three evaporation source apparatuses may exhibit nozzles having a flux-wise axis always oriented perpendicularly to the adjacent surface of the web, so as to direct always the evaporated flux orthogonally to the adjacent surface of the web.
- Another aspect of the invention is a method for the deposition of thin CIGS films on a thin web with a roll-to roll vapor deposition system, comprising a vacuum deposition chamber enclosing at least three evaporation source apparatuses according to the invention, containing respectively In, Ga and Cu, characterized in that the web, for example made of polymer or metal foil, departs a pay-off roll, gets coated with a thin CIGS film by said evaporation sources as it travels between tensioning rolls until it gets rolled-up by take-up roll .
- At least one heating element is an electrically heatable rod or an electrically heatable coil, in both cases made of an electrically-conductive and heat-resistant material, in particular tantalum, graphite, tungsten, or molybdenum.
- the apparatus can further comprise at least one heat shield assembly that at least partially surrounds the crucible.
- at least one heat shield assembly that at least partially surrounds the crucible.
- an external opening of a nozzle can protrude through and beyond the thickness of the heat shield assembly adjacent to the nozzle, so as to avoid a deposition of the evaporated atoms onto the external surface of the crucible or lid.
- at least one lip pair can join the crucible with a lid such that said lip pair extends through the heat shield assembly and is equal or greater than the total thickness of the heat shield assembly at the edge of the lip pair, so as to avoid a deposition of the evaporated atoms onto the external surface of the shield, or crucible or lid.
- the nozzles positioned above the level of material to be evaporated advantageously reduce the evaporation source's volume and keep the material hot at the surface where evaporation occurs, thereby permitting a faster response to changes in temperature of the heating elements and subsequent energy savings.
- the nozzles advantageously help to solve the problem of uneven spatial distribution of the deposited material and reduce energy expense to obtain a uniform deposition profile.
- the at least one heat shield assembly that at least partially surrounds the crucible advantageously insulates the source and therefore reduces the amount of heat radiated to adjacent objects.
- the external opening of the nozzles protruding through and beyond the thickness of the heat shield assembly advantageously reduces the possibility of material depositing onto the shields.
- the exemplary embodiments presented in this disclosure show an evaporation source comprising a crucible, itself comprising at least three heating elements, at least one of which is contained within said crucible.
- the crucible is ordinarily closed by a lid.
- the heating element located within the crucible is positioned close to the top of the crucible and close to nozzle orifices present either in the lid or near the top of one of the crucible's long walls.
- Said nozzles may be shaped/oriented so as to direct the vapor flux in a desired direction. This proximity of the inner heating element to the nozzles ensures firstly that the heating elements block the line of sight from outside the evaporation source through the nozzles towards the material to be evaporated, and secondly that the nozzles are heated.
- FIG. 1 B shows a preferred embodiment of the evaporation source 200 of FIG. 1A where crucible 50 is closed by lid 60.
- Crucible 50 and lid 60 are ordinarily made of a refractory material for example primarily containing alumina (AI2O3), silica, boron nitride, graphite, molybdenum, tantalum, or tungsten.
- Lid 60 comprises at least one nozzle 65 positioned over heater assembly 100.
- Lid 60 preferably comprises a plurality of nozzles 65 wherein no nozzle 65 provides a line of sight from outside crucible 50 to the surface of the material to be evaporated contained within crucible 50.
- Temperature sensor 71 is also present in the cross-section of the crucible bottom. Hole 52 serves in this embodiment as a channel for temperature sensor 72 in case there is a need to measure temperatures closer to the mid-length of crucible 50.
- FIG. 1 C illustrates how the channel of nozzle 65 may be designed so as to direct the evaporated flux at an angle that is not orthogonal to the plane of lid 60. The angle at which nozzle 65 is oriented will ordinarily be between +30° and +150° with respect to the plane onto which nozzle 65 is fitted, in the present case the plane of lid 60.
- FIG. 1 C also shows how crucible 50 and lid 60 are provided with respective extended lips 56, 66 at the perimeter where they are in contact. The pair of lips 56, 66 acts as a circumferential joint which may also channel the vapor flux of material 55 that may leak through the pair of lips 56, 66 between crucible 50 and lid 60.
- Said lips 56, 66 help reduce the amount of material that may deposit on an optional heat shield assembly presented in FIGS.1 D-1 E.
- FIG. 2A shows an assembly of three axially aligned electrical heating coils 10, 20, 30.
- the central heating coil 10 is powered at each of its extremities via extended insulated contacts 1 1 , 12.
- Insulated contacts 1 1 , 12 are located close to the common axis of heating coils 10, 20, 30 and extend in a direction parallel to said common axis.
- Heating coil 20 is located at one of the extremities of heating coil 10 and surrounds insulated contact 1 1.
- Heating coil 30 is located at the other extremity of heating coil 10 and surrounds insulated contact 12.
- Heating coils 20 and 30 are powered via insulated contacts 21 , 22 and 31 , 32, respectively.
- FIG. 2D shows an embodiment of an evaporation source 200 comprising a crucible 50, ordinarily an elongated container of trapezoidal cross-section made of refractory material, and a heater assembly 100 aligned with the crucible's long centerline and passing through corresponding holes in each trapezoid short side.
- Heater tube 40 is positioned close to the crucible's opening or top so that the material to be evaporated, also called a melt, remains at the crucible's bottom and below heater tube 40 during ordinary operation.
- Evaporation source 200 further comprises at least three temperature sensors 71 , 72, 73, such as thermocouples, positioned against the part of crucible 50 containing said melt.
- Heating rods 8, 9, 10 are electrically connected in parallel so as to represent a single heating element and powered via insulated contacts 1 1 , 12.
- Heating rods 8, 9, 10 may also be connected in series or any combination of parallel and series, or that the number of heating rods positioned within crucible 50 and close to its top may be increased.
- Heating assembly 100 further comprises side heaters 20 and 30 that are mounted outside crucible 50 against each short face and powered by contacts 21 , 22 and 31 , 32, respectively. It is understood that if the crucible 50 is surrounded by heat shields as in Figs. 1 D and 1 E, the side heaters 20 and 30 will be located inside the heat shields. Similarly to crucibles 50 of embodiments presented in FIGS.
- FIG. 4B shows a cross-section of the embodiment of evaporation source 200 of FIG. 4A. It is conceptually similar to the cross-section of FIG. 1 C with a crucible 50 containing molten material to be evaporated 55 at its bottom and comprising temperature sensor 71 , temperature sensor channel 52, three parallel heating rods 8, 9, 10, and lid 60 bearing nozzles 65.
- FIG. 4B details how the walls of crucible 50 differ from that of FIG. 1 C: the shape of crucible 50 is modified to support lid 60 bearing side-facing nozzles 65.
- FIG. 4B also shows that the line of sight from outside evaporation source 200 through nozzles 65 towards the material to be evaporated 55 is obstructed by heating rod 9.
- FIG. 4D shows a cross-section of the embodiment of evaporation source 200 of FIG. 4C. It is conceptually similar to the cross-section of FIG. 1 C with a crucible 50 containing molten material to be evaporated 55 at its bottom and comprising temperature sensor 71 , temperature sensor channel 52, three parallel heating rods 8, 9, 10, and a lid 60 that bears no nozzles. In this embodiment, it is crucible 50 that bears convergent-divergent nozzles 65 close to the top of one of its side walls that runs parallel to heating rod 9.
- FIG. 4D also shows that the line of sight from outside evaporation source 200 through nozzles 65 towards the material to be evaporated 55 is obstructed by heating rod 9.
- a first advantage results from the use of nozzles able to direct the evaporated flux in a predetermined direction along the evaporation source's length to solve the problem of uneven spatial distribution of the deposited material.
- Deposition with conventional crucibles ordinarily exhibits a decay of evaporated material deposition profile towards the extremities of the crucible's long axis. The decay is ordinarily compensated for a set point by supplying more heat to the crucible.
- the benefit of using nozzles able to direct the evaporated flux in a predetermined direction is that the resulting deposition profile is more uniform at less energy expense while being easily adaptable via regulation of the independent power supplies.
- a further advantage of this disclosure is that the heat needed to produce a desired deposition profile can be tuned as the material to be evaporated depletes within the evaporation source or as the heat shields experience changes in their properties. Independent adjustments of the heat produced by the heating elements therefore regulate the evaporation profile. Furthermore, said adjustments prevent the onset of unwanted vapor flow along the crucible's long axis.
- the ability to continuously regulate the evaporation profile is especially beneficial for vapor deposition onto large substrates, for example roll-to-roll webs 0.5 meters wide or more, or also glass substrates larger than 0.5 meters in width or length. It then becomes possible to advantageously integrate an evaporation sources feedback control function as part of an evaporation source system. Said feedback control function would at least use temperatures measured by the evaporation source's temperature sensors and possibly also measurements of the material deposited onto the substrate.
- FIG. 6B therefore presents an advantageous cabling solution to electrically connect heating elements to power supplies.
- using shared power lines may, under some conditions, enable to reduce the electrical current flowing through some of the lines, thereby further simplifying the cabling between heating elements and power supplies.
- placing the heating assembly mainly within the crucible rather than outside is beneficial to reduce the evaporation source's volume. This is especially advantageous for use within vacuum deposition chambers where several evaporation sources might be used within a restricted volume. For example in the context of a co-evaporation vacuum deposition chamber, it is advantageous to have evaporation sources arranged in parallel and close to each other. Also, the coaxial configuration of the heating assembly presented in the embodiments of FIGS. 1 and 2 reduces the complexity of external wiring needed to power the heating elements in comparison to configurations found in prior art. Benefits of this reduction in wiring are increased overall reliability and reduction of assembly cost.
- a roll-to roll vapor deposition system 800 was actually built for the deposition of thin CIGS films on a thin web (830), comprising a vacuum deposition chamber (810) enclosing at least three evaporation sources (822, 823, 824) according to the invention, containing respectively In, Ga and Cu, whereby web (830), made of polyimide foil, departs a pay-off roll (841 ) and gets coated by said evaporation sources (822, 823, 824) as it travels between tensioning rolls (851 , 852, 853, 854) until it gets rolled-up by take-up roll (842).
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP16206164 | 2016-12-22 | ||
PCT/EP2017/081925 WO2018114377A1 (en) | 2016-12-22 | 2017-12-07 | Linear vapor source |
Publications (1)
Publication Number | Publication Date |
---|---|
EP3559304A1 true EP3559304A1 (en) | 2019-10-30 |
Family
ID=57629381
Family Applications (1)
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EP17816650.0A Pending EP3559304A1 (en) | 2016-12-22 | 2017-12-07 | Linear vapor source |
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WO (1) | WO2018114377A1 (en) |
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EP3899085A1 (en) * | 2018-12-21 | 2021-10-27 | Applied Materials, Inc. | Vapor deposition apparatus and method for coating a substrate in a vacuum chamber |
CN111485201B (en) * | 2019-01-28 | 2024-05-24 | 广州先艺电子科技有限公司 | Evaporation source of vacuum evaporation equipment |
DE102021117576B4 (en) * | 2021-07-07 | 2023-02-09 | Thyssenkrupp Steel Europe Ag | Coating system for coating an object |
Family Cites Families (16)
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GB554312A (en) | 1941-12-26 | 1943-06-29 | Zoltan Deshaw | Improvements in and relating to the separation of metal parts cemented together by corrosion |
US2440135A (en) | 1944-08-04 | 1948-04-20 | Alexander Paul | Method of and apparatus for depositing substances by thermal evaporation in vacuum chambers |
US20010005553A1 (en) * | 1999-11-10 | 2001-06-28 | Witzman Matthew R. | Linear aperture deposition apparatus and coating process |
EP1496134B1 (en) * | 2003-07-04 | 2015-03-25 | Agfa HealthCare NV | Vapor deposition apparatus. |
DE502004004046D1 (en) | 2004-11-20 | 2007-07-19 | Applied Materials Gmbh & Co Kg | Apparatus for evaporating materials |
JP2006225757A (en) | 2005-01-21 | 2006-08-31 | Mitsubishi Heavy Ind Ltd | Vacuum vapor deposition apparatus |
JP2007186787A (en) * | 2005-12-14 | 2007-07-26 | Hitachi Displays Ltd | Vapor deposition pot, thin-film forming apparatus provided therewith and method for producing display device |
EP2188406B1 (en) | 2007-09-12 | 2018-03-07 | Flisom AG | Method for manufacturing a compound film |
TW201122128A (en) * | 2009-12-31 | 2011-07-01 | Axuntek Solar Energy Co Ltd | Evaporation source device (I) |
KR101807333B1 (en) | 2010-05-28 | 2017-12-08 | 프리솜 에이쥐 | Method and apparatus for thin film module with dotted interconnects and vias |
JP5465136B2 (en) * | 2010-08-31 | 2014-04-09 | 富士フイルム株式会社 | Vapor deposition flux measuring device and vacuum vapor deposition device |
JP5520871B2 (en) * | 2011-03-31 | 2014-06-11 | 株式会社日立ハイテクノロジーズ | Vapor deposition equipment |
TWI538235B (en) | 2011-04-19 | 2016-06-11 | 弗里松股份有限公司 | Thin-film photovoltaic device and fabrication method |
US9837565B2 (en) | 2012-12-21 | 2017-12-05 | Flison Ag | Fabricating thin-film optoelectronic devices with added potassium |
DE102014205467B4 (en) | 2014-03-24 | 2018-04-19 | Continental Automotive Gmbh | A connector assembly |
EP3241244B1 (en) | 2014-12-30 | 2019-09-11 | Flisom AG | Apparatus for supporting and transporting a photovoltaic sub-module during processing |
-
2017
- 2017-12-07 WO PCT/EP2017/081925 patent/WO2018114377A1/en unknown
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