EP3453042B1 - Switching device for conducting and interrupting electrical currents - Google Patents

Switching device for conducting and interrupting electrical currents Download PDF

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Publication number
EP3453042B1
EP3453042B1 EP17716244.3A EP17716244A EP3453042B1 EP 3453042 B1 EP3453042 B1 EP 3453042B1 EP 17716244 A EP17716244 A EP 17716244A EP 3453042 B1 EP3453042 B1 EP 3453042B1
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EP
European Patent Office
Prior art keywords
switching
mechanical contact
contact arrangement
semiconductor switch
contacts
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EP17716244.3A
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German (de)
French (fr)
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EP3453042A1 (en
Inventor
Gerd Schmitz
Johannes Meissner
Marcel Uedelhoven
Michael Wohlang
Oliver Kreft
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Eaton Intelligent Power Ltd
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Eaton Intelligent Power Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H9/00—Details of switching devices, not covered by groups H01H1/00 - H01H7/00
    • H01H9/54—Circuit arrangements not adapted to a particular application of the switching device and for which no provision exists elsewhere
    • H01H9/541—Contacts shunted by semiconductor devices
    • H01H9/542—Contacts shunted by static switch means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/60—Auxiliary means structurally associated with the switch for cleaning or lubricating contact-making surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H9/00—Details of switching devices, not covered by groups H01H1/00 - H01H7/00
    • H01H9/54—Circuit arrangements not adapted to a particular application of the switching device and for which no provision exists elsewhere
    • H01H9/541—Contacts shunted by semiconductor devices
    • H01H9/542—Contacts shunted by static switch means
    • H01H2009/543—Contacts shunted by static switch means third parallel branch comprising an energy absorber, e.g. MOV, PTC, Zener
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H9/00—Details of switching devices, not covered by groups H01H1/00 - H01H7/00
    • H01H9/54—Circuit arrangements not adapted to a particular application of the switching device and for which no provision exists elsewhere
    • H01H9/541—Contacts shunted by semiconductor devices
    • H01H9/542—Contacts shunted by static switch means
    • H01H2009/544—Contacts shunted by static switch means the static switching means being an insulated gate bipolar transistor, e.g. IGBT, Darlington configuration of FET and bipolar transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H33/00—High-tension or heavy-current switches with arc-extinguishing or arc-preventing means
    • H01H33/60—Switches wherein the means for extinguishing or preventing the arc do not include separate means for obtaining or increasing flow of arc-extinguishing fluid
    • H01H33/66—Vacuum switches
    • H01H33/664—Contacts; Arc-extinguishing means, e.g. arcing rings

Definitions

  • the invention relates to a switching device for conducting and isolating electrical currents, in particular a hybrid switching arrangement for conducting and isolating high DC currents and low-frequency AC currents, and a switching device with such a switching device.
  • the formation of an undesired arc can be provoked, for example, if an electrical breakdown occurs between the not yet fully opened mechanical switching contacts immediately after the power semiconductor has switched off. This can have been caused, for example, by welding of the contacts during a previous switch-on process, which as a result leads to a time-delayed opening process due to the welding being broken by the switching drive.
  • a voltage breakdown with subsequent arcing can also occur if the topography of the originally smooth contact surfaces has changed significantly over time as a result of numerous switching loads, e.g. in the case of contactors. If the switching contacts are not yet completely open, a voltage breakdown with subsequent arcing can occur due to local field overshoots.
  • a gradual change in the contact topography can be brought about, for example, by switch-on bounce processes. Such bouncing processes result in the formation of short-term, low-energy arcs between the minimally opened contacts, which lead to minor local melting of the contact surfaces in the area of the base points of the arcs, which gradually change the contact surfaces overall.
  • Such repeated formation of an arc results in a gradual material displacement of the contact material, due to the different mobility of positive and negative charge carriers.
  • Voltage conditioning is mainly used for vacuum interrupters in the medium-voltage range.
  • the method of voltage conditioning consists of applying a voltage between the open switch contacts, preferably an AC voltage in the range above 1000 volts, and gradually increasing this until voltage breakdown occurs between the contacts. Since this occurs primarily at points where local electric field increases occur due to micro-tips, these are melted or vaporized at certain points due to the energy content of the charge carrier packets penetrating through and are thereby removed, which results in a smoothing of the contact surfaces and thus an increase in the dielectric strength of the opened contacts causes.
  • a device for voltage and current conditioning of vacuum interrupters is, for example, in the German Offenlegungsschrift DE 199 42 971 A1 described.
  • the method of current conditioning is described in detail as a manufacturing measure to improve the properties of vacuum interrupters.
  • the object of the present invention is now to propose a switching device for conducting and isolating electrical currents, in particular an improved hybrid switching arrangement for conducting and isolating high DC currents and low-frequency AC currents, and an improved switching device with such a switching device.
  • the present invention proposes a hybrid switch such as that described at the outset and from the German Offenlegungsschrift DE 10 2013 114 259 A1 to modify known switches in such a way that switching operations of the mechanical contact arrangement are detected and, depending thereon, to control the switching on and off of a semiconductor switch during a switching operation of a mechanical contact arrangement in such a way that contact surfaces of contacts of the mechanical contact arrangement can be conditioned.
  • the switching on and off of the semiconductor switch can then be controlled in such a way, for example, after a specific number of detected switching operations or when a specific cumulative switching power is reached that specifically one or several arcs occur when opening the contacts of the mechanical contact arrangement, which can smooth the contact surfaces.
  • the invention can therefore be used to implement a recurring, in particular periodic, current conditioning by means of control technology, as a result of which the functional reliability of the mechanical contact arrangement can be improved with regard to achieving a long electrical service life.
  • One embodiment of the invention now relates to a switching device for conducting and isolating electrical currents with a mechanical contact arrangement, a semiconductor switch which is connected in parallel with the mechanical contact arrangement, and switching electronics which are used to switch the semiconductor switch on and off during a switching operation of the mechanical contact arrangement for Commutation of an electric current is formed by the mechanical contact arrangement on the semiconductor switch.
  • the switching electronics are configured to detect switching operations of the mechanical contact arrangement and, depending on this, to control the switching on and off of the semiconductor switch during a switching operation of the mechanical contact arrangement in such a way that contact surfaces of contacts of the mechanical contact arrangement can be conditioned. This enables the implementation of, in particular, periodic current conditioning in the switching device.
  • the switching electronics can be configured to count the number of switching operations after an initialization in order to detect the switching operations and, when a predetermined number of switching operations is reached in a subsequent switching operation, to turn on the semiconductor switch with a predetermined blocking time t1 after the contacts of the mechanical contact arrangement have opened.
  • periodic current conditioning can be implemented, for example, by switching on the semiconductor switch with a delay after the contacts of the mechanical contact arrangement have opened after a certain number of switching operations, such that one or more arcs occur between the opening contacts, which then continue until the end of the blocking time t1 and can cause a smoothing of the contact surfaces.
  • the switching electronics can be configured to record the switching operations, to record the switching capacity for each individual switching operation after an initialization and, when a specified cumulative switching power is reached in a subsequent switching operation, to delay the semiconductor switch by a specified blocking time t1 after opening the contacts of the mechanical to switch on the contact arrangement.
  • the specified blocking time t1 can be selected depending on parameters of the switching device in such a way that one or more arcs can form between the contact surfaces of the contacts of the mechanical contact arrangement that open during the blocking time, so that due to the current strength of each arc at the base points of the arcs on the contact surfaces Material melting can occur.
  • the specified blocking time t1 can depend on the current intensity to be switched, the switching voltage, the material of the contact surfaces, the opening time of the contacts, the distance that can be reached between the contacts during the specified blocking time, a vacuum in which the mechanical contact arrangement is possibly located and other parameters be selected, which can have an influence on the formation of arcs when opening the contacts of the mechanical contact arrangement.
  • the switching device can have a further mechanical contact arrangement and both mechanical contact arrangements can be connected in series.
  • Such a double-break switching device is particularly well suited for the use of the invention, since this type of switching device is primarily used for switching high direct currents in which the probability of the occurrence of standing arcs is high and current conditioning is therefore required from time to time to smooth the Contact surfaces can be very helpful in reducing the likelihood of standing arcs.
  • the switching device can have an auxiliary coil which is galvanically isolated from the circuit of a switching drive for moving contacts of the mechanical contact arrangement and is electromagnetically coupled to a coil of the switching drive in such a way that when the voltage supply to the Switching drive a voltage is generated, which is fed to the switching electronics to supply.
  • the switching electronics can be operated without an external electrical energy supply; in particular, no separate connection for the energy supply or, in general, an energy supply that is independent of the circuit to be switched is required.
  • a current converter can be provided for detecting the current flow through the semiconductor switch and generating a corresponding signal that is fed to the switching electronics.
  • the signal can be evaluated by the switching electronics, for example, in order to record the exact commutation time of the current flow from the mechanical contact arrangement to the semiconductor switch, but also to record the duration of the current load on the semiconductor switch and to protect the semiconductor switch from excessive loading and possible destruction protect.
  • a further embodiment of the invention relates to a switching device with a switching device according to the invention and a switching drive for moving contacts of the first and second mechanical contact arrangement.
  • one embodiment of the invention relates to a method for controlling a semiconductor switch of a switching device for conducting and isolating electrical currents, which has a first mechanical contact arrangement, the semiconductor switch, which is connected in parallel to the first mechanical contact arrangement, and a second mechanical contact arrangement, which is in series is connected to the first mechanical contact arrangement, wherein in the method switching operations of the mechanical contact arrangement are detected and depending on this the switching on and off of the semiconductor switch during a switching operation of the mechanical contact arrangement is controlled in such a way that conditioning of contact surfaces of contacts of the mechanical contact arrangement can take place.
  • the method can be carried out by switching electronics designed to switch the semiconductor switch on and off.
  • the Switching electronics may be implemented by a processor and a memory storing a program configuring the processor to carry out a method according to the invention and as described herein.
  • FIG. 1 shows the block diagram of a switching device according to the invention for a 2-pole, polarity-independent switching device.
  • the connections of the switching device for the two poles are labeled L1, T1 and L2, T2 respectively.
  • This switching device In terms of circuitry, this largely corresponds to that in the German Offenlegungsschrift DE 10 2013 114 259 A1 described and therein in 1 shown device.
  • the inventive device described below differs from this known device in the switching electronics 50, which is designed for a special activation of the semiconductor switch 20, as will be explained in detail in the following description.
  • the switching electronics 50 can be implemented, for example, by a processor and a memory (in particular a microcontroller), with a program being stored in the memory that configures the processor to carry out method steps which, as explained below by way of example, the special control of the semiconductor switch 20 by the effect processor.
  • the program can be part of the firmware of a processor-controlled switching device, for example.
  • the switching device shown has a parallel connection of a first mechanical (extinguishing) contact arrangement 10 with a semiconductor switch 20 based on an anti-serial IGBT arrangement (power semiconductor), which is connected in series with a second mechanical contact arrangement 30 to ensure galvanic isolation.
  • the mechanical contact arrangements 10 and 30 can be designed as a bridge switching arrangement of an air switching device or arrangement.
  • the semiconductor switch 20 is switched on or off by the switching electronics 50, that is to say it is switched on or off.
  • the electronic switching system 50 is supplied with energy stored in the (magnetic drive) coil of the switching or magnetic drive of the switching device.
  • an auxiliary coil 40 is provided which is galvanically isolated from the circuit of the switching drive and which can generate a voltage for supplying the switching electronics 50 when the switching drive is switched off.
  • the auxiliary coil 40 can be wound around the drive coil, for example.
  • the switching electronics 50 can be supplied by an external electrical energy source (not shown), for example from a central energy source for the electrical units of a switch cabinet or via a bus system to which a number of switching devices are coupled, and the like.
  • the semiconductor switch 20 In the switched-on case, ie when the switching drive supplies the magnetic drive coil with a voltage and a current and the contacts of the first and second mechanical contact arrangements 10 and 30 are closed, the semiconductor switch 20 is blocked, since in this state there is no voltage from the auxiliary coil 40 is generated to supply the switching electronics 50 and the switching electronics 50 is therefore de-energized and the IGBTs of the semiconductor switch 20 can not drive.
  • the magnetic drive coil of the switching drive At the moment the voltage and current supply of the magnetic drive coil of the switching drive is switched on in order to close the contacts of the first and second mechanical contact arrangements 10 and 30, energy is stored in the magnetic drive coil.
  • the coil current induces a voltage in the auxiliary coil 40 electromagnetically coupled to the magnetic drive coil, which voltage activates the switching electronics 50 .
  • the voltage induced in the auxiliary coil 40 is sufficient, on the one hand, to supply the switching electronics 50 itself and, on the other hand, to build up the voltage required to drive the IGBTs.
  • the auxiliary coil 40 offers the advantage that the semiconductor switch can be driven even before the contacts of the first and second mechanical contact arrangements 10 and 30 are closed due to the mechanical inertia.
  • each switching operation is recorded and stored by the switching electronics. This can be done either as a pure counting process or by additionally recording the switching power for each individual switching process, e.g. with the help of suitable current and voltage sensors integrated in the hybrid switch.
  • the load current is switched off in the manner typical of hybrid switches, ie during the opening process of the mechanical switch contacts, the load current flows briefly via the semiconductor switch 20, where it is brought to zero within a few milliseconds.
  • the switch-off process of the following switching process or some other subsequent switching processes is then modified according to the invention in such a way that when the switching contacts open, the semiconductor switch 20 is not activated for a defined time interval of, for example, a few 10 milliseconds so that an arc burns between the switching contacts within this interval.
  • the semiconductor switch 20 is finally turned on, as a result of which it then takes over the load current in the usual way and leads it to zero within a very short time.
  • FIG. 2A - C The smoothing effect of the contact surfaces achieved with such a current conditioning is shown schematically in Figures 2A - C:
  • the in the Figures 2A-C The mechanical contact arrangement of a vacuum switch shown has a first electrode 100 and a second electrode 102 .
  • Each of the electrodes 100, 102 has a contact 104, 106, respectively, which each include a contact surface 108, 110, respectively, which are pressed together to contact one another.
  • the first contact surface 108 of the first contact 104 of the first electrode 100 has a material removal point 112 and the second contact surface 110 of the second contact 106 of the second electrode has a corresponding material accumulation point 114 on.
  • the material removal point 112 and the material accumulation point 114 can, for example, by several switching processes and any local melting that occurs as a result may have arisen as described above.
  • Figure 2B shows the same contact arrangement in which vacuum arcs 116 are intentionally drawn after a defined number of switching operations when opening, in that a correspondingly dimensioned DC voltage is applied to the electrodes 100, 102 between the opened contacts 104 and 106 for a predetermined period of time.
  • the base points of the vacuum arcs 116 preferably form in this area, which results in a partial leveling of the surface inhomogeneities due to the arc work acting there, as shown in Figure 2C is shown.
  • the contact surfaces 108 and 110 have now been smoothed due to the current conditioning in that they now have a partially leveled material removal point 112' and a partially leveled material accumulation point 114'.
  • step S10 the switching electronics 50 are initialized; the energy supply required for this can be taken from the load circuit, for example, or it takes place inductively via the auxiliary coil 40, which is supplied by the freewheeling voltage of the magnetic drive coil when the switching device is switched off.
  • the electronic switching system 50 checks in step S12 whether a target number of switching operations for periodic current conditioning has been reached, in particular by reading out a stored number of switching operations from an internal non-volatile memory, which represents the number of switching operations carried out since the current conditioning was last carried out, and the number of switching operations read out with it compares the target switching number, which is specified electronically in particular, which depends on parameters of the switching device for a suitable current conditioning period can be selected, for example depending on the current load of the switching device.
  • step S12 If it is determined in step S12 that the target number of switching operations for a periodic current conditioning has been reached, the semiconductor switch 20 is initially turned off in the event of the impending switch-off, but instead is turned off in step S14.
  • step S16 With the opening of the mechanical switching contacts, at least one switching arc is drawn in the case of load, the time at which it occurs is recorded in step S16.
  • step S18 there is a wait until the electronically stored specified IGBT blocking time t1 is reached, for example by starting a timer that measures the time elapsed until the IGBT blocking time t1 is reached.
  • the IGBT blocking time t1 defines the burning time of the arc from the point at which it occurs.
  • step S20 the electronically stored switching number is reset to zero in step S20 and the IGBT is then switched on for a time t2 (steps S22, S24).
  • step S22, S24 the arc current is immediately commutated to the low-impedance semiconductor switch 20 or IGBT arranged parallel to the mechanical switch, where the current is very quickly reduced to zero, as in a regular switch-off process, and in step S26 the semiconductor switch 20 or IGBT is switched to blocking.
  • step S28 the number of switching operations stored is increased by 1 for each switching-off process that is carried out.
  • the increased switching number is stored again in the internal non-volatile memory.
  • step S12 If the comparison in step S12 shows that the stored number of operations is less than the setpoint number of operations, no current conditioning is required and the process continues directly with step S22.
  • the time of the commutation to the IGBT of the semiconductor switch 20, which has already been turned on, can be detected by a current transformer 60 located there.
  • the current converter 60 generates a signal as soon as a current begins to flow through the IGBTs of the semiconductor switch 20 (after the semiconductor switch 20 or IGBT has been switched on in step S22), i.e. the current flow commutes from the first mechanical contact arrangement 10 to the semiconductor switch 20.
  • the signal generated by the current converter 60 and signaling the commutation is fed to the switching electronics 50, which can control the semiconductor switch 20 as a function of this, as described below.
  • the switching electronics 50 can control the semiconductor switch 20 in such a way that the IGBTs of the semiconductor switch 20 become blocking again after a short current flow time or current conduction time t2 defined or specified via the switching electronics 50, so that the commutated load current in the semiconductor switch 20 is led to zero within the defined period of time.
  • the current flow time is ideally measured via the switching electronics 50 in such a way that the contact gap with the first and second mechanical contact arrangement 10 or 30 is completely open, i.e. the switching contacts are permanently open and any switching chatter processes no longer occur.
  • a protective device e.g. in the form of a varistor 70, upstream of the semiconductor switch 20 or to connect it in parallel.
  • the present invention is particularly suitable for use in contactors, circuit breakers and motor protection switches that are designed in particular for operation with direct currents and/or low-frequency currents. It enables the switching of high direct currents and low-frequency currents with a comparatively long electrical service life. Furthermore, these properties allow the realization of comparatively compact switching devices for high currents.

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Description

Die Erfindung betrifft eine Schaltvorrichtung zum Führen und Trennen von elektrischen Strömen, insbesondere eine Hybridschaltanordnung zum Führen und Trennen hoher DC-Ströme und niederfrequenter AC-Ströme, und ein Schaltgerät mit einer derartigen Schaltvorrichtung.The invention relates to a switching device for conducting and isolating electrical currents, in particular a hybrid switching arrangement for conducting and isolating high DC currents and low-frequency AC currents, and a switching device with such a switching device.

In der der deutschen Offenlegungsschrift DE 10 2013 114 259 A1 ist eine vorteilhafte Variante einer Hybridschaltanordnung beschrieben, bei der die Strombelastung des Leistungshalbleiters zur Erzielung einer möglichst hohen Lebenserwartung sowie einer möglichst geringen Dimensionierung zeitlich minimiert ist, was vor allem bei Leistungsschützen im Strombereich einiger hundert Ampere wichtig ist. Zur zeitlichen Minimierung des durch den Leistungshalbleiter fließenden Laststroms wird über einen Stromwandler der Kommutierungszeitpunkt erfasst und der Stromfluss durch den Halbleiter nur so lange aufrechterhalten, bis die sich öffnende mechanische Schaltstrecke eine ausreichende elektrische Festigkeit erreicht hat. In dieser kurzen Zeit wird der Laststrom durch den Halbleiter über dessen Ansteuerung künstlich zu Null geführt, so dass nach Öffnen sowohl der Löschkontakt- als auch der hierzu in Reihe geschalteten Trennkontaktanordnung eine sichere galvanische Trennung erzielt wird.In the German Offenlegungsschrift DE 10 2013 114 259 A1 an advantageous variant of a hybrid switching arrangement is described in which the current load on the power semiconductor is minimized in terms of time to achieve the highest possible life expectancy and the lowest possible dimensioning, which is particularly important for power contactors in the current range of a few hundred amperes. To minimize the load current flowing through the power semiconductor over time, the commutation time is detected by a current transformer and the current flow through the semiconductor is only maintained until the opening mechanical switching gap has achieved sufficient electrical strength. In this short time, the load current is artificially reduced to zero by the semiconductor via its activation, so that after opening both the reset contact arrangement and the isolating contact arrangement connected in series thereto, reliable galvanic isolation is achieved.

Bei der Auslegung eines Schaltgeräts besteht eine wichtige Aufgabe darin, zur Gewährleistung der Funktionssicherheit das Auftreten dauerhafter sogenannter Stehlichtbögen zu verhindern.When designing a switching device, an important task is to prevent the occurrence of permanent so-called standing arcs in order to guarantee functional reliability.

In einer Hybridschaltanordnung kann die Ausbildung eines ungewollten Lichtbogens beispielsweise dann provoziert werden, wenn es zwischen den noch nicht vollständig geöffneten mechanischen Schaltkontakten unmittelbar nach einem erfolgten Abschaltvorgang durch den Leistungshalbleiter zu einem elektrischen Durchschlag kommt. Dies kann beispielsweise durch ein Verschweißen der Kontakte bei einem vorausgegangenen Einschaltvorgang verursacht worden sein, was im Ergebnis zu einem zeitlich verzögerten Öffnungsvorgang aufgrund des Aufbrechens der Verschweißung durch den Schaltantrieb führt.In a hybrid switching arrangement, the formation of an undesired arc can be provoked, for example, if an electrical breakdown occurs between the not yet fully opened mechanical switching contacts immediately after the power semiconductor has switched off. This can have been caused, for example, by welding of the contacts during a previous switch-on process, which as a result leads to a time-delayed opening process due to the welding being broken by the switching drive.

Zu einem Spannungsdurchschlag mit anschließender Lichtbogenausbildung kann es auch dann kommen, wenn sich die Topografie der ursprünglich glatten Kontaktoberflächen im Zuge zahlreicher Schaltbeanspruchungen, wie z.B. bei Schützen, mit der Zeit stark verändert hat. Bei noch nicht vollständig geöffneten Schaltkontakten kann es dann aufgrund lokaler Feldüberhöhungen zu einem Spannungsdurchschlag mit anschließender Lichtbogenausbildung kommen. Insbesondere bei Hybridschaltern kann eine allmähliche Veränderung der Kontakttopografie beispielsweise durch Einschaltprellvorgänge bewirkt werden. Bei solchen Prellvorgängen kommt es zwischen den minimal geöffneten Kontakten zur Ausbildung von kurzzeitigen energiearmen Lichtbögen, welche im Bereich der Fußpunkte der Lichtbögen zu geringfügigen lokalen Aufschmelzungen der Kontaktoberflächen führen, die in Summe die Kontaktoberflächen allmählich verändern. Speziell bei DC-Schaltgeräten hat eine solche wiederholte Lichtbogenausbildung im Ergebnis eine allmähliche Materialverschiebung des Kontaktwerkstoffs zur Folge, bedingt durch die unterschiedliche Mobilität von positiven und negativen Ladungsträgern.A voltage breakdown with subsequent arcing can also occur if the topography of the originally smooth contact surfaces has changed significantly over time as a result of numerous switching loads, e.g. in the case of contactors. If the switching contacts are not yet completely open, a voltage breakdown with subsequent arcing can occur due to local field overshoots. In the case of hybrid switches in particular, a gradual change in the contact topography can be brought about, for example, by switch-on bounce processes. Such bouncing processes result in the formation of short-term, low-energy arcs between the minimally opened contacts, which lead to minor local melting of the contact surfaces in the area of the base points of the arcs, which gradually change the contact surfaces overall. Particularly in the case of DC switching devices, such repeated formation of an arc results in a gradual material displacement of the contact material, due to the different mobility of positive and negative charge carriers.

Um die Gefahr von Spannungsdurchschlägen zwischen bereits geöffneten Kontakten zu reduzieren, gibt es in der Praxis bekanntermaßen die Methode des sogenannten Kontaktkonditionierens, wobei man grundsätzlich zwischen einer Spannungskonditionierung und einer Stromkonditionierung unterscheidet. Die Spannungskonditionierung kommt vor allem bei Vakuumschaltröhren im Bereich der Mittelspannung zur Anwendung. Die Methode der Spannungskonditionierung besteht darin, zwischen den geöffneten Schaltkontakten eine Spannung, vorzugsweise eine AC-Spannung im Bereich oberhalb von 1000 Volt, anzulegen und diese allmählich soweit zu erhöhen, bis es zwischen den Kontakten zu Spannungsdurchschlägen kommt. Da dies vor allem an Stellen erfolgt, wo es aufgrund von Mikrospitzen zu örtlichen elektrischen Feldüberhöhungen kommt, werden diese aufgrund des Energiegehalts der durchschlagenden Ladungsträgerpakete punktuell aufgeschmolzen oder verdampft und dadurch abgetragen, was im Ergebnis eine Glättung der Kontaktoberflächen und damit eine Erhöhung der Spannungsfestigkeit der geöffneten Kontakte bewirkt.In order to reduce the risk of voltage breakdowns between contacts that have already been opened, there is known in practice the method of so-called contact conditioning, with a fundamental distinction being made between voltage conditioning and current conditioning. Voltage conditioning is mainly used for vacuum interrupters in the medium-voltage range. The method of voltage conditioning consists of applying a voltage between the open switch contacts, preferably an AC voltage in the range above 1000 volts, and gradually increasing this until voltage breakdown occurs between the contacts. Since this occurs primarily at points where local electric field increases occur due to micro-tips, these are melted or vaporized at certain points due to the energy content of the charge carrier packets penetrating through and are thereby removed, which results in a smoothing of the contact surfaces and thus an increase in the dielectric strength of the opened contacts causes.

Eine wirkungsvolle Methode zur Erhöhung der Spannungsfestigkeit ist weiterhin die Stromkonditionierung. Anders als bei der Spannungskonditionierung basiert die Stromkonditionierung auf einem gewollten Lichtbogen zwischen den geöffneten Schaltkontakten, welcher im Moment des Kontaktöffnens entsteht und für ein definiertes Zeitintervall brennt. Solche Lichtbögen können durchaus Stromstärken von einigen hundert Ampere besitzen, was aufgrund des vergleichsweise hohen Energiegehalts an den Fußpunkten zu vergleichsweise größeren örtlichen Aufschmelzungen führt und aufgrund des stochastischen Wanderungsverhaltens der Lichtbogenfußpunkte in Summe zu einer Glättung der Kontaktoberflächen führt.Current conditioning is still an effective method of increasing dielectric strength. Unlike stress conditioning, the Current conditioning on a desired arc between the open switch contacts, which occurs at the moment the contact opens and burns for a defined time interval. Such arcs can certainly have current strengths of several hundred amperes, which, due to the comparatively high energy content at the base points, leads to comparatively greater local melting and, due to the stochastic migration behavior of the arc base points, leads to a smoothing of the contact surfaces overall.

Eine Vorrichtung zur Spannungs- und Stromkonditionierung von Vakuumschaltröhren ist beispielsweise in der deutschen Offenlegungsschrift DE 199 42 971 A1 beschrieben. In der deutschen Offenlegungsschrift DE 197 14 655 A1 ist die Methode der Stromkonditionierung als fertigungstechnische Maßnahme zur Verbesserung der Eigenschaften von Vakuumschaltkammern eingehend beschrieben.A device for voltage and current conditioning of vacuum interrupters is, for example, in the German Offenlegungsschrift DE 199 42 971 A1 described. In the German Offenlegungsschrift DE 197 14 655 A1 the method of current conditioning is described in detail as a manufacturing measure to improve the properties of vacuum interrupters.

Aufgabe der vorliegenden Erfindung ist es nun, eine Schaltvorrichtung zum Führen und Trennen von elektrischen Strömen, insbesondere eine verbesserte Hybridschaltanordnung zum Führen und Trennen hoher DC-Ströme und niederfrequenter AC-Ströme, und ein verbessertes Schaltgerät mit einer derartigen Schaltvorrichtung vorzuschlagen.The object of the present invention is now to propose a switching device for conducting and isolating electrical currents, in particular an improved hybrid switching arrangement for conducting and isolating high DC currents and low-frequency AC currents, and an improved switching device with such a switching device.

Diese Aufgabe wird durch die Gegenstände der unabhängigen Ansprüche gelöst. Weitere Ausgestaltungen der Erfindung sind Gegenstand der abhängigen Ansprüche.This object is solved by the subject matter of the independent claims. Further configurations of the invention are the subject matter of the dependent claims.

Die vorliegende Erfindung schlägt vor, einen Hybridschalter wie beispielsweise den eingangs geschilderten und aus der deutschen Offenlegungsschrift DE 10 2013 114 259 A1 bekannten Schalter derart zu modifizieren, dass Schaltvorgänge der mechanischen Kontaktanordnung erfasst werden und davon abhängig das An- und Abschalten eines Halbleiterschalters während eines Schaltvorgangs einer mechanischen Kontaktanordnung derart zu steuern, dass eine Konditionierung von Kontaktoberflächen von Kontakten der mechanischen Kontaktanordnung erfolgen kann. Das An- und Abschalten des Halbleiterschalters kann dann beispielsweise nach einer bestimmten Anzahl von erfassten Schaltvorgängen oder dem Erreichen einer bestimmten kumulierten Schaltleistung derart gesteuert werden, dass gezielt eine oder mehrere Lichtbögen beim Öffnen der Kontakte der mechanischen Kontaktanordnung entstehen, welche eine Glättung der Kontaktoberflächen bewirken können. Durch die Erfindung kann also eine wiederkehrende, insbesondere periodische Stromkonditionierung auf steuerungstechnischem Weg implementiert werden, wodurch die Funktionssicherheit der mechanischen Kontaktanordnung im Hinblick auf die Erzielung einer hohen elektrischen Lebensdauer verbessert werden kann.The present invention proposes a hybrid switch such as that described at the outset and from the German Offenlegungsschrift DE 10 2013 114 259 A1 to modify known switches in such a way that switching operations of the mechanical contact arrangement are detected and, depending thereon, to control the switching on and off of a semiconductor switch during a switching operation of a mechanical contact arrangement in such a way that contact surfaces of contacts of the mechanical contact arrangement can be conditioned. The switching on and off of the semiconductor switch can then be controlled in such a way, for example, after a specific number of detected switching operations or when a specific cumulative switching power is reached that specifically one or several arcs occur when opening the contacts of the mechanical contact arrangement, which can smooth the contact surfaces. The invention can therefore be used to implement a recurring, in particular periodic, current conditioning by means of control technology, as a result of which the functional reliability of the mechanical contact arrangement can be improved with regard to achieving a long electrical service life.

Eine Ausführungsform der Erfindung betrifft nun eine Schaltvorrichtung zum Führen und Trennen von elektrischen Strömen mit einer mechanischen Kontaktanordnung, einem Halbleiterschalter, der parallel zur mechanischen Kontaktanordnung geschaltet ist, und einer Schaltelektronik, die zum An- und Abschalten des Halbleiterschalters während eines Schaltvorgangs der mechanischen Kontaktanordnung zum Kommutieren eines elektrischen Stromes von der mechanischen Kontaktanordnung auf den Halbleiterschalter ausgebildet ist. Erfindungsgemäß ist die Schaltelektronik konfiguriert, Schaltvorgänge der mechanischen Kontaktanordnung zu erfassen und davon abhängig das An- und Abschalten des Halbleiterschalters während eines Schaltvorgangs der mechanischen Kontaktanordnung derart zu steuern, dass eine Konditionierung von Kontaktoberflächen von Kontakten der mechanischen Kontaktanordnung erfolgen kann. Dadurch wird die Implementierung einer insbesondere periodischen Stromkonditionierung bei der Schaltvorrichtung ermöglicht.One embodiment of the invention now relates to a switching device for conducting and isolating electrical currents with a mechanical contact arrangement, a semiconductor switch which is connected in parallel with the mechanical contact arrangement, and switching electronics which are used to switch the semiconductor switch on and off during a switching operation of the mechanical contact arrangement for Commutation of an electric current is formed by the mechanical contact arrangement on the semiconductor switch. According to the invention, the switching electronics are configured to detect switching operations of the mechanical contact arrangement and, depending on this, to control the switching on and off of the semiconductor switch during a switching operation of the mechanical contact arrangement in such a way that contact surfaces of contacts of the mechanical contact arrangement can be conditioned. This enables the implementation of, in particular, periodic current conditioning in the switching device.

Insbesondere kann die Schaltelektronik konfiguriert sein, zum Erfassen der Schaltvorgänge die Anzahl von Schaltvorgängen nach einer Initialisierung zu zählen und bei Erreichen einer vorgegebenen Anzahl von Schaltvorgängen bei einem darauffolgenden Schaltvorgang den Halbleiterschalter um eine vorgegebene Sperrzeit t1 verzögert nach dem Öffnen der Kontakte der mechanischen Kontaktanordnung anzuschalten. Hierdurch kann beispielsweise eine periodische Stromkonditionierung implementiert werden, indem beispielsweise nach einer bestimmten Anzahl an Schaltvorgängen der Halbleiterschalter nach dem Öffnen der Kontakte der mechanischen Kontaktanordnung derart verzögert angeschaltet wird, dass ein oder mehrere Lichtbögen zwischen den sich öffnenden Kontakten entstehen, welche dann bis zum Ablauf der Sperrzeit t1 brennen und dabei eine Glättung der Kontaktoberflächen bewirken können.In particular, the switching electronics can be configured to count the number of switching operations after an initialization in order to detect the switching operations and, when a predetermined number of switching operations is reached in a subsequent switching operation, to turn on the semiconductor switch with a predetermined blocking time t1 after the contacts of the mechanical contact arrangement have opened. As a result, periodic current conditioning can be implemented, for example, by switching on the semiconductor switch with a delay after the contacts of the mechanical contact arrangement have opened after a certain number of switching operations, such that one or more arcs occur between the opening contacts, which then continue until the end of the blocking time t1 and can cause a smoothing of the contact surfaces.

Alternativ oder zusätzlich kann die Schaltelektronik konfiguriert sein, zum Erfassen der Schaltvorgänge die Schaltleistung für jeden einzelnen Schaltvorgang nach einer Initialisierung zu erfassen und bei Erreichen einer vorgegebenen kumulierten Schaltleistung bei einem darauffolgenden Schaltvorgang den Halbleiterschalter um eine vorgegebene Sperrzeit t1 verzögert nach dem Öffnen der Kontakte der mechanischen Kontaktanordnung anzuschalten.Alternatively or additionally, the switching electronics can be configured to record the switching operations, to record the switching capacity for each individual switching operation after an initialization and, when a specified cumulative switching power is reached in a subsequent switching operation, to delay the semiconductor switch by a specified blocking time t1 after opening the contacts of the mechanical to switch on the contact arrangement.

Die vorgegebene Sperrzeit t1 kann abhängig von Parametern der Schaltvorrichtung derart gewählt sein, dass sich ein oder mehrere Lichtbögen zwischen den Kontaktoberflächen der sich während der Sperrzeit öffnenden Kontakte der mechanischen Kontaktanordnung ausbilden können, sodass aufgrund der Stromstärke jedes Lichtbogens an den Fußpunkten der Lichtbögen auf den Kontaktoberflächen Materialaufschmelzungen entstehen können. Insbesondere kann die vorgegebene Sperrzeit t1 abhängig von der zu schaltenden Stromstärke, der Schaltspannung, dem Material der Kontaktoberflächen, der Öffnungszeit der Kontakte, dem erreichbaren Abstand der Kontakte während der vorgegeben Sperrzeit, einem Vakuum, in dem sich die mechanische Kontaktanordnung gegebenenfalls befindet und weiteren Parametern gewählt sein, die einen Einfluss auf das Ausbilden von Lichtbögen beim Öffnen der Kontakte der mechanischen Kontaktanordnung haben können.The specified blocking time t1 can be selected depending on parameters of the switching device in such a way that one or more arcs can form between the contact surfaces of the contacts of the mechanical contact arrangement that open during the blocking time, so that due to the current strength of each arc at the base points of the arcs on the contact surfaces Material melting can occur. In particular, the specified blocking time t1 can depend on the current intensity to be switched, the switching voltage, the material of the contact surfaces, the opening time of the contacts, the distance that can be reached between the contacts during the specified blocking time, a vacuum in which the mechanical contact arrangement is possibly located and other parameters be selected, which can have an influence on the formation of arcs when opening the contacts of the mechanical contact arrangement.

Die Schaltvorrichtung kann eine weitere mechanische Kontaktanordnung aufweisen und beide mechanischen Kontaktanordnungen können in Reihe geschaltet sein. Eine derartige Doppelunterbrecher-Schaltvorrichtung eignet sich besonders gut für den Einsatz der Erfindung, da diese Art der Schaltvorrichtung vor allem zum Schalten hoher Gleichströme eingesetzt wird, bei denen die Wahrscheinlichkeit des Auftretens von Stehlichtbögen hoch ist und daher eine Stromkonditionierung von Zeit zu Zeit zur Glättung der Kontaktoberflächen sehr hilfreich sein kann, um die Wahrscheinlichkeit für Stehlichtbögen zu reduzieren.The switching device can have a further mechanical contact arrangement and both mechanical contact arrangements can be connected in series. Such a double-break switching device is particularly well suited for the use of the invention, since this type of switching device is primarily used for switching high direct currents in which the probability of the occurrence of standing arcs is high and current conditioning is therefore required from time to time to smooth the Contact surfaces can be very helpful in reducing the likelihood of standing arcs.

Weiterhin kann die Schaltvorrichtung eine Hilfsspule aufweisen, die galvanisch vom Stromkreis eines Schaltantriebs zum Bewegen von Kontakten der mechanischen Kontaktanordnung getrennt und mit einer Spule des Schaltantriebs elektromagnetisch derart gekoppelt ist, dass in ihr beim Abschalten der Spannungsversorgung des Schaltantriebs eine Spannung erzeugt wird, die der Schaltelektronik zum Versorgen zugeführt wird. Dadurch kann die Schaltelektronik ohne externe elektrische Energieversorgung betrieben werden, insbesondere ist kein gesonderter Anschluss für die Energieversorgung oder generell eine vom zu schaltenden Stromkreis unabhängige Energieversorgung erforderlich.Furthermore, the switching device can have an auxiliary coil which is galvanically isolated from the circuit of a switching drive for moving contacts of the mechanical contact arrangement and is electromagnetically coupled to a coil of the switching drive in such a way that when the voltage supply to the Switching drive a voltage is generated, which is fed to the switching electronics to supply. As a result, the switching electronics can be operated without an external electrical energy supply; in particular, no separate connection for the energy supply or, in general, an energy supply that is independent of the circuit to be switched is required.

Weiterhin kann ein Stromwandler zum Erfassen des Stromflusses durch den Halbleiterschalter und Erzeugen eines entsprechenden Signals vorgesehen sein, das der Schaltelektronik zugeführt wird. Das Signal kann von der Schaltelektronik beispielsweise ausgewertet werden, um den genauen Kommutierungszeitpunkt des Stromflusses von der mechanischen Kontaktanordnung auf den Halbleiterschalter zu erfassen, aber auch um die Dauer der Strombelastung des Halbleiterschalters zu erfassen und den Halbleiterschalter vor einer zu langen Belastung und ggf. Zerstörung zu schützen.Furthermore, a current converter can be provided for detecting the current flow through the semiconductor switch and generating a corresponding signal that is fed to the switching electronics. The signal can be evaluated by the switching electronics, for example, in order to record the exact commutation time of the current flow from the mechanical contact arrangement to the semiconductor switch, but also to record the duration of the current load on the semiconductor switch and to protect the semiconductor switch from excessive loading and possible destruction protect.

Eine weitere Ausführungsform der Erfindung betrifft ein Schaltgerät mit einer Schaltvorrichtung nach der Erfindung und einem Schaltantrieb zum Bewegen von Kontakten der ersten und zweiten mechanischen Kontaktanordnung.A further embodiment of the invention relates to a switching device with a switching device according to the invention and a switching drive for moving contacts of the first and second mechanical contact arrangement.

Schließlich betrifft eine Ausführungsform der Erfindung ein Verfahren zum Steuern eines Halbleiterschalters einer Schaltvorrichtung zum Führen und Trennen von elektrischen Strömen, die eine erste mechanische Kontaktanordnung, den Halbleiterschalter, der parallel zur ersten mechanischen Kontaktanordnung geschaltet ist, und eine zweite mechanische Kontaktanordnung aufweist, die in Reihe zur ersten mechanischen Kontaktanordnung geschaltet ist, wobei bei dem Verfahren Schaltvorgänge der mechanischen Kontaktanordnung erfasst werden und davon abhängig das An- und Abschalten des Halbleiterschalters während eines Schaltvorgangs der mechanischen Kontaktanordnung derart gesteuert wird, dass eine Konditionierung von Kontaktoberflächen von Kontakten der mechanischen Kontaktanordnung erfolgen kann.Finally, one embodiment of the invention relates to a method for controlling a semiconductor switch of a switching device for conducting and isolating electrical currents, which has a first mechanical contact arrangement, the semiconductor switch, which is connected in parallel to the first mechanical contact arrangement, and a second mechanical contact arrangement, which is in series is connected to the first mechanical contact arrangement, wherein in the method switching operations of the mechanical contact arrangement are detected and depending on this the switching on and off of the semiconductor switch during a switching operation of the mechanical contact arrangement is controlled in such a way that conditioning of contact surfaces of contacts of the mechanical contact arrangement can take place.

Das Verfahren kann von einer zum An- und Abschalten des Halbleiterschalters ausgebildeten Schaltelektronik ausgeführt werden. Insbesondere kann die Schaltelektronik durch einen Prozessor und einen Speicher implementiert sein, in dem ein Programm gespeichert ist, das den Prozessor zum Ausführen eines Verfahrens nach der Erfindung und wie hierin beschrieben konfiguriert.The method can be carried out by switching electronics designed to switch the semiconductor switch on and off. In particular, the Switching electronics may be implemented by a processor and a memory storing a program configuring the processor to carry out a method according to the invention and as described herein.

Weitere Vorteile und Anwendungsmöglichkeiten der vorliegenden Erfindung ergeben sich aus der nachfolgenden Beschreibung in Verbindung mit den in den Zeichnungen dargestellten Ausführungsbeispielen.Further advantages and application possibilities of the present invention result from the following description in connection with the exemplary embodiments illustrated in the drawings.

In der Beschreibung, in den Ansprüchen, in der Zusammenfassung und in den Zeichnungen werden die in der hinten angeführten Liste der Bezugszeichen verwendeten Begriffe und zugeordneten Bezugszeichen verwendet.In the description, in the claims, in the summary and in the drawings, the terms used in the list of reference symbols and associated reference symbols are used.

Die Zeichnungen zeigen inThe drawings show in

  • Fig. 1 ein Blockschaltbild eines Ausführungsbeispiels einer Schaltvorrichtung mit einer Doppelkontaktanordnung gemäß der Erfindung; 1 a block diagram of an embodiment of a switching device with a double contact arrangement according to the invention;
  • Fig. 2A-2C schematisch die Veränderung der Kontaktoberflächen der Kontakte einer mechanischen Kontaktanordnung durch den Betrieb in einer Schaltvorrichtung gemäß der Erfindung; und Figures 2A-2C schematically the change in the contact surfaces of the contacts of a mechanical contact arrangement by operation in a switching device according to the invention; and
  • Fig. 3 ein Ablaufdiagramm eines Ausführungsbeispiels der Steuerung eines Halbleiterschalters durch eine Schaltelektronik einer Schaltvorrichtung gemäß der Erfindung. 3 a flowchart of an embodiment of the control of a semiconductor switch by switching electronics of a switching device according to the invention.

In der folgenden Beschreibung können gleiche, funktional gleiche und funktional zusammenhängende Elemente mit den gleichen Bezugszeichen versehen sein. Absolute Werte sind im Folgenden nur beispielhaft angegeben und sind nicht als die Erfindung einschränkend zu verstehen.In the following description, identical, functionally identical and functionally related elements can be provided with the same reference symbols. Absolute values are given below only as examples and are not to be understood as limiting the invention.

Fig. 1 zeigt das Blockschaltbild einer erfindungsgemäßen Schaltvorrichtung für ein 2-poliges, polaritätsunabhängiges Schaltgerät. Die Anschlüsse des Schaltgeräts für die beiden Pole sind jeweils mit L1, T1 und L2, T2 bezeichnet. Diese Schaltvorrichtung entspricht schaltungstechnisch weitgehend der in der deutschen Offenlegungsschrift DE 10 2013 114 259 A1 beschriebenen und darin in Fig. 1 gezeigten Vorrichtung. 1 shows the block diagram of a switching device according to the invention for a 2-pole, polarity-independent switching device. The connections of the switching device for the two poles are labeled L1, T1 and L2, T2 respectively. This switching device In terms of circuitry, this largely corresponds to that in the German Offenlegungsschrift DE 10 2013 114 259 A1 described and therein in 1 shown device.

Von dieser bekannten Vorrichtung unterscheidet sich die nachfolgend beschriebene erfinderische Vorrichtung in der Schaltelektronik 50, die für eine spezielle Ansteuerung des Halbleiterschalters 20 ausgebildet ist, wie in der nachfolgenden Beschreibung noch im Detail erläutert wird. Die Schaltelektronik 50 kann beispielsweise durch einen Prozessor und einen Speicher implementiert sein (insbesondere einen Mikrokontroller), wobei in dem Speicher ein Programm gespeichert ist, das den Prozessor zum Ausführen von Verfahrensschritten konfiguriert, welche die spezielle Ansteuerung des Halbleiterschalters 20 wie nachfolgend beispielhaft erläutert durch den Prozessor bewirken. Das Programm kann beispielsweise Teil der Firmware eines Prozessorgesteuerten Schaltgeräts sein.The inventive device described below differs from this known device in the switching electronics 50, which is designed for a special activation of the semiconductor switch 20, as will be explained in detail in the following description. The switching electronics 50 can be implemented, for example, by a processor and a memory (in particular a microcontroller), with a program being stored in the memory that configures the processor to carry out method steps which, as explained below by way of example, the special control of the semiconductor switch 20 by the effect processor. The program can be part of the firmware of a processor-controlled switching device, for example.

Für jeden Pol weist die in Fig. 1 gezeigte Schaltvorrichtung eine Parallelschaltung einer ersten mechanischen (Lösch-)Kontaktanordnung 10 mit einem Halbleiterschalter 20 auf Basis einer antiseriellen IGBT-Anordnung (Leistungshalbleiter) auf, welche mit einer zweiten mechanischen Kontaktanordnung 30 zur Sicherstellung der galvanischen Trennung in Serie geschaltet ist. Die mechanischen Kontaktanordnungen 10 und 30 können als Brückenschaltanordnung eines Luftschaltgeräts bzw. -anordnung ausgebildet sein.For each pole, the in 1 The switching device shown has a parallel connection of a first mechanical (extinguishing) contact arrangement 10 with a semiconductor switch 20 based on an anti-serial IGBT arrangement (power semiconductor), which is connected in series with a second mechanical contact arrangement 30 to ensure galvanic isolation. The mechanical contact arrangements 10 and 30 can be designed as a bridge switching arrangement of an air switching device or arrangement.

Der Halbleiterschalter 20 wird von der Schaltelektronik 50 an- oder abgeschaltet, d.h. durchgesteuert oder gesperrt. Die Schaltelektronik 50 wird von einer in der (Magnetantriebs-)Spule des Schalt- bzw. Magnetantriebs des Schaltgeräts gespeicherten Energie versorgt. Hierzu ist eine galvanisch vom Stromkreis des Schaltantriebs getrennte Hilfsspule 40 vorgesehen, welche beim Abschalten des Schaltantriebs eine Spannung zum Versorgen der Schaltelektronik 50 erzeugen kann. Die Hilfsspule 40 kann beispielsweise um die Antriebsspule gewickelt sein. Zusätzlich oder auch alternativ kann die Schaltelektronik 50 durch eine (nicht dargestellte) externe elektrische Energiequelle versorgt werden, beispielsweise von einer zentralen Energiequelle für die elektrischen Einheiten eines Schaltschranks oder über ein Bussystem, an das mehrere Schaltvorrichtungen gekoppelt sind, und dergleichen.The semiconductor switch 20 is switched on or off by the switching electronics 50, that is to say it is switched on or off. The electronic switching system 50 is supplied with energy stored in the (magnetic drive) coil of the switching or magnetic drive of the switching device. For this purpose, an auxiliary coil 40 is provided which is galvanically isolated from the circuit of the switching drive and which can generate a voltage for supplying the switching electronics 50 when the switching drive is switched off. The auxiliary coil 40 can be wound around the drive coil, for example. Additionally or alternatively, the switching electronics 50 can be supplied by an external electrical energy source (not shown), for example from a central energy source for the electrical units of a switch cabinet or via a bus system to which a number of switching devices are coupled, and the like.

Im eingeschalteten Fall, d.h. wenn der Schaltantrieb die Magnetantriebs-Spule mit einer Spannung und einem Strom versorgt und die Kontakte der ersten und zweiten mechanischen Kontaktanordnungen 10 und 30 geschlossen sind, ist der Halbleiterschalter 20 gesperrt, da in diesem Zustand von der Hilfsspule 40 keine Spannung zum Versorgen der Schaltelektronik 50 erzeugt wird und die Schaltelektronik 50 daher spannungslos ist und die IGBTs des Halbleiterschalters 20 nicht ansteuern kann.In the switched-on case, ie when the switching drive supplies the magnetic drive coil with a voltage and a current and the contacts of the first and second mechanical contact arrangements 10 and 30 are closed, the semiconductor switch 20 is blocked, since in this state there is no voltage from the auxiliary coil 40 is generated to supply the switching electronics 50 and the switching electronics 50 is therefore de-energized and the IGBTs of the semiconductor switch 20 can not drive.

Im Moment des Einschaltens der Spannungs- und Stromversorgung der Magnetantriebs-Spule des Schaltantriebs zum Schließen der Kontakte der ersten und zweiten mechanischen Kontaktanordnungen 10 und 30 wird in der Magnetantriebs-Spule Energie gespeichert. Durch den Spulenstrom wird in der elektromagnetisch mit der Magnetantriebs-Spule gekoppelten Hilfsspule 40 eine Spannung induziert, welche die Schaltelektronik 50 aktiviert.At the moment the voltage and current supply of the magnetic drive coil of the switching drive is switched on in order to close the contacts of the first and second mechanical contact arrangements 10 and 30, energy is stored in the magnetic drive coil. The coil current induces a voltage in the auxiliary coil 40 electromagnetically coupled to the magnetic drive coil, which voltage activates the switching electronics 50 .

Die in der Hilfsspule 40 induzierte Spannung reicht aus, um zum einen die Schaltelektronik 50 selbst zu versorgen, zum anderen um die zum Ansteuern der IGBTs erforderliche Spannung aufzubauen. Die Hilfsspule 40 bietet den Vorteil, dass die Ansteuerung des Halbleiterschalters bereits vor Schließen der Kontakte der ersten und zweiten mechanischen Kontaktanordnungen 10 bzw. 30 aufgrund der mechanischen Trägheit erfolgen kann.The voltage induced in the auxiliary coil 40 is sufficient, on the one hand, to supply the switching electronics 50 itself and, on the other hand, to build up the voltage required to drive the IGBTs. The auxiliary coil 40 offers the advantage that the semiconductor switch can be driven even before the contacts of the first and second mechanical contact arrangements 10 and 30 are closed due to the mechanical inertia.

Mit der Aktivierung der Schaltelektronik 50 startet ein Initialisierungsvorgang. Um auf steuertechnischem Weg gezielt eine Glättung der Kontaktoberflächen herbeizuführen, wird erfindungsgemäß jeder Schaltvorgang von der Schaltelektronik erfasst und gespeichert. Dies kann entweder als reiner Zählvorgang erfolgen oder auch durch zusätzliches Erfassen der Schaltleistung für jeden einzelnen Schaltvorgang, z.B. mit Hilfe von im Hybridschalter integrierten geeigneten Strom- und Spannungssensoren.With the activation of the switching electronics 50, an initialization process starts. In order to bring about a targeted smoothing of the contact surfaces by means of control technology, according to the invention, each switching operation is recorded and stored by the switching electronics. This can be done either as a pure counting process or by additionally recording the switching power for each individual switching process, e.g. with the help of suitable current and voltage sensors integrated in the hybrid switch.

Im "Normalfall" erfolgt das Abschalten des Laststroms dabei auf die für Hybridschalter typische Weise, d.h. während des Öffnungsvorgangs der mechanischen Schaltkontakte fließt der Laststrom kurzzeitig über den Halbleiterschalter 20, wo er innerhalb weniger Millisekunden zu Null geführt wird.In the “normal case”, the load current is switched off in the manner typical of hybrid switches, ie during the opening process of the mechanical switch contacts, the load current flows briefly via the semiconductor switch 20, where it is brought to zero within a few milliseconds.

Bei Erreichen einer definierten Zahl von Schaltungen oder auch einer definierten kumulierten Schaltleistung wird dann erfindungsgemäß der Abschaltvorgang des nachfolgenden oder auch einiger weiterer folgender Schaltvorgänge in der Weise modifiziert, dass beim Öffnen der Schaltkontakte der Halbleiterschalter 20 für ein definiertes Zeitintervall von z.B. einigen 10 Millisekunden nicht angesteuert wird, so dass innerhalb dieses Intervalls zwischen den Schaltkontakten ein Lichtbogen brennt.When a defined number of switching operations or a defined cumulative switching capacity is reached, the switch-off process of the following switching process or some other subsequent switching processes is then modified according to the invention in such a way that when the switching contacts open, the semiconductor switch 20 is not activated for a defined time interval of, for example, a few 10 milliseconds so that an arc burns between the switching contacts within this interval.

Aufgrund der Brenncharakteristik von Lichtbögen, insbesondere Vakuumschaltlichtbögen im Strombereich von maximal einiger tausend Ampere und des bei Gleichströmen fehlenden natürlichen Stromnulldurchgangs kann es hierbei zu dem in der DE 197 14 655 A1 beschriebenen Stromkonditionierungseffekt kommen, der im Ergebnis zu einer zumindest teilweisen Glättung der Kontaktoberflächen führt.Due to the burning characteristics of arcs, in particular vacuum switching arcs in the current range of a maximum of several thousand amperes and the lack of a natural current zero crossing with direct currents, this can lead to the DE 197 14 655 A1 described current conditioning effect come, which leads to an at least partial smoothing of the contact surfaces as a result.

Nach Ablauf des für das Brennen des Lichtbogens steuerungstechnisch vorgesehenen Zeitintervalls wird schließlich der Halbleiteschalter 20 leitend geschaltet, wodurch dieser dann in gewohnter Weise den Laststrom übernimmt und ihn innerhalb einer sehr kurzen Zeit zu Null führt.After the time interval provided by the control system for burning the arc has elapsed, the semiconductor switch 20 is finally turned on, as a result of which it then takes over the load current in the usual way and leads it to zero within a very short time.

Der mit einer solchen Stromkonditionierung erzielte Glättungseffekt der Kontaktoberflächen ist in den Abbildungen 2A - C schematisch dargestellt:
Die in den Fig. 2A-C gezeigte mechanische Kontaktanordnung eines Vakuumschalters weist eine erste Elektrode 100 und eine zweite Elektrode 102 auf. Jede der Elektroden 100, 102 besitzt einen Kontakt 104 bzw. 106, die jeweils eine Kontaktoberfläche 108 bzw. 110 umfassen, die zum Kontaktieren aneinandergedrückt werden.The smoothing effect of the contact surfaces achieved with such a current conditioning is shown schematically in Figures 2A - C:
The in the Figures 2A-C The mechanical contact arrangement of a vacuum switch shown has a first electrode 100 and a second electrode 102 . Each of the electrodes 100, 102 has a contact 104, 106, respectively, which each include a contact surface 108, 110, respectively, which are pressed together to contact one another.

Bei der in Fig. 2A gezeigten Kontaktanordnung ist es infolge zahlreicher Schalthandlungen zu einer lokalen Anhäufung bzw. Abtragung von Kontaktmaterial gekommen: beispielsweise weist die erste Kontaktoberfläche 108 des ersten Kontaktes 104 der ersten Elektrode 100 eine Materialabtragstelle 112 und die zweite Kontaktoberfläche 110 des zweiten Kontaktes 106 der zweiten Elektrode eine entsprechende Materialanhäufungsstelle 114 auf. Die Materialabtragstelle 112 und die Materialanhäufungsstelle 114 können beispielsweise durch mehrere Schaltvorgänge und dabei auftretende lokale Aufschmelzungen wie eingangs beschrieben entstanden sein.At the in Figure 2A In the contact arrangement shown, there has been a local accumulation or removal of contact material as a result of numerous switching operations: for example, the first contact surface 108 of the first contact 104 of the first electrode 100 has a material removal point 112 and the second contact surface 110 of the second contact 106 of the second electrode has a corresponding material accumulation point 114 on. The material removal point 112 and the material accumulation point 114 can, for example, by several switching processes and any local melting that occurs as a result may have arisen as described above.

Fig. 2B zeigt die gleiche Kontaktanordnung, bei welcher nach einer definierten Zahl von Schalthandlungen beim Öffnen gewollt Vakuumlichtbögen 116 gezogen werden, indem zwischen den geöffneten Kontakten 104 und 106 an den Elektroden 100, 102 eine entsprechend bemessene Gleichspannung für eine vorgegebene Zeitdauer anliegt. Figure 2B shows the same contact arrangement in which vacuum arcs 116 are intentionally drawn after a defined number of switching operations when opening, in that a correspondingly dimensioned DC voltage is applied to the electrodes 100, 102 between the opened contacts 104 and 106 for a predetermined period of time.

Aufgrund der lokalen elektrischen Felderhöhung im Bereich der Materialanhäufungsstelle 114 bilden sich die Fußpunkte der Vakuumlichtbögen 116 vorzugsweise in diesem Bereich aus, was im Ergebnis zu einer partiellen Einebnung der Oberflächeninhomogenitäten aufgrund der dort wirkenden Lichtbogenarbeit führt, wie es in Fig. 2C gezeigt ist. Die Kontaktoberflächen 108 und 110 sind nun aufgrund der Stromkonditionierung geglättet worden, indem sie nun eine partiell eingeebnete Materialabtragstelle 112' und eine partiell eingeebnete Materialanhäufungsstelle 114' aufweisen.Due to the local electric field increase in the area of the material accumulation point 114, the base points of the vacuum arcs 116 preferably form in this area, which results in a partial leveling of the surface inhomogeneities due to the arc work acting there, as shown in Figure 2C is shown. The contact surfaces 108 and 110 have now been smoothed due to the current conditioning in that they now have a partially leveled material removal point 112' and a partially leveled material accumulation point 114'.

Der schematische grundlegende Steuerungsablauf zur Konditionierung der Kontaktoberflächen ist in Fig. 3 dargestellt:
In Schritt S10 erfolgt die Initialisierung der Schaltelektronik 50; die hierfür erforderliche Energieversorgung kann z.B. dem Lastkreis entnommen werden oder sie erfolgt induktiv über die Hilfsspule 40, welche durch die Freilaufspannung der Magnetantriebsspule beim Abschalten des Schaltgeräts versorgt wird.The schematic basic control sequence for conditioning the contact surfaces is in 3 shown:
In step S10, the switching electronics 50 are initialized; the energy supply required for this can be taken from the load circuit, for example, or it takes place inductively via the auxiliary coil 40, which is supplied by the freewheeling voltage of the magnetic drive coil when the switching device is switched off.

Nach der Initialisierung überprüft die Schaltelektronik 50 in Schritt S12, ob eine Sollschaltzahl für eine periodische Stromkonditionierung erreicht ist, insbesondere indem sie aus einem internen nichtflüchtigen Speicher eine gespeicherte Schaltzahl ausliest, welche die seit der zuletzt durchgeführten Stromkonditionierung durchgeführten Schaltvorgänge repräsentiert, und die ausgelesene Schaltzahl mit der insbesondere elektronisch vorgegebenen Sollschaltzahl vergleicht, welche abhängig von Parametern der Schaltvorrichtung für eine geeignete Stromkonditionierungsperiode gewählt sein kann, beispielsweise abhängig von der Strombelastung der Schaltvorrichtung.After the initialization, the electronic switching system 50 checks in step S12 whether a target number of switching operations for periodic current conditioning has been reached, in particular by reading out a stored number of switching operations from an internal non-volatile memory, which represents the number of switching operations carried out since the current conditioning was last carried out, and the number of switching operations read out with it compares the target switching number, which is specified electronically in particular, which depends on parameters of the switching device for a suitable current conditioning period can be selected, for example depending on the current load of the switching device.

Wird in Schritt S12 festgestellt, dass die Sollschaltzahl für eine periodische Stromkonditionierung erreicht ist, wird der Halbleiterschalter 20 bei der bevorstehenden Abschaltung zunächst nichtleitend, sondern in Schritt S14 sperrend geschaltet.If it is determined in step S12 that the target number of switching operations for a periodic current conditioning has been reached, the semiconductor switch 20 is initially turned off in the event of the impending switch-off, but instead is turned off in step S14.

Mit dem Öffnen der mechanischen Schaltkontakte wird dadurch im Lastfall mindestens ein Schaltlichtbogen gezogen, dessen Entstehungszeitpunkt im Schritt S16 zeitlich erfasst wird.With the opening of the mechanical switching contacts, at least one switching arc is drawn in the case of load, the time at which it occurs is recorded in step S16.

Daraufhin wird in Schritt S18 solange gewartet, bis die elektronisch hinterlegte vorgegebene IGBT-Sperrzeit t1 erreicht ist, beispielsweise indem ein Zeitgeber gestartet wird, der den Zeitablauf bis zum Erreichen der IGBT-Sperrzeit t1 misst. Durch die IGBT-Sperrzeit t1 wird hierbei die Brenndauer des Lichtbogens ab seinem Entstehungszeitpunkt definiert.Then, in step S18, there is a wait until the electronically stored specified IGBT blocking time t1 is reached, for example by starting a timer that measures the time elapsed until the IGBT blocking time t1 is reached. The IGBT blocking time t1 defines the burning time of the arc from the point at which it occurs.

Nach Ablauf der Sperrzeit t1 wird im Schritt S20 die elektronisch gespeicherte Schaltzahl auf Null zurückgesetzt und der IGBT dann für eine Zeit t2 leitend geschaltet (Schritte S22, S24). Es erfolgt dadurch sofort die Kommutierung des Lichtbogenstroms auf den parallel zum mechanischen Schalter angeordneten niederohmigen Halbleiterschalter 20 bzw. IGBT, wo der Strom wie bei einem regulären Ausschaltvorgang sehr schnell zu Null geführt wird und im Schritt S26 der Halbleiterschalter 20 bzw. IGBT sperrend geschaltet wird.After the blocking time t1 has elapsed, the electronically stored switching number is reset to zero in step S20 and the IGBT is then switched on for a time t2 (steps S22, S24). As a result, the arc current is immediately commutated to the low-impedance semiconductor switch 20 or IGBT arranged parallel to the mechanical switch, where the current is very quickly reduced to zero, as in a regular switch-off process, and in step S26 the semiconductor switch 20 or IGBT is switched to blocking.

Für jeden getätigten Ausschaltvorgang wird abschließend im Schritt S28 die gespeicherte Schaltzahl um 1 erhöht. Die erhöhte Schaltzahl wird wieder im internen nichtflüchtigen Speicher abgelegt.Finally, in step S28, the number of switching operations stored is increased by 1 for each switching-off process that is carried out. The increased switching number is stored again in the internal non-volatile memory.

Ergibt der Vergleich in Schritt S12, dass die gespeicherte Schaltzahl geringer als die Sollschaltzahl ist, so ist noch keine Stromkonditionierung erforderlich und es wird direkt mit Schritt S22 fortgefahren.If the comparison in step S12 shows that the stored number of operations is less than the setpoint number of operations, no current conditioning is required and the process continues directly with step S22.

Im Hinblick auf eine möglichst hohe elektrische Lebensdauer der IGBTs sowie auf deren vertretbar große Dimensionierung ist es zweckmäßig, den Stromfluss durch den Halbleiterschalter 20 zeitlich in der Weise zu begrenzen, dass der Strom dort nur so lange fließt, bis die mechanische Schaltstrecke eine ausreichende Wiederverfestigung erreicht hat. Für die Minimierung der Stromflusszeit durch den Halbleiterschalter 20 ist die genaue Kenntnis des Kommutierungszeitpunkts wichtig, da bei jedem Schaltgerät die effektiven Zeiten für den mechanischen Abschaltvorgang aus verschiedenen Gründen schwanken.With regard to the longest possible electrical service life of the IGBTs and their reasonably large dimensioning, it is expedient to limit the current flow through the semiconductor switch 20 in terms of time in such a way that the current flows there only until the mechanical switching gap achieves sufficient resolidification Has. Exact knowledge of the commutation time is important for minimizing the current flow time through the semiconductor switch 20, since the effective times for the mechanical switch-off process vary for various reasons in each switching device.

Der Zeitpunkt der Kommutierung auf den bereits durchgesteuerten IGBT des Halbleiterschalters 20 kann durch einen dort befindlichen Stromwandler 60 erfasst werden. Der Stromwandler 60 erzeugt ein Signal, sobald durch die IGBTs des Halbleiterschalters 20 ein Strom zu fließen beginnt (nachdem der Halbleiterschalter 20 bzw. IGBT im Schritt S22 leitend geschaltet wurde), der Stromfluss also von der ersten mechanischen Kontaktanordnung 10 auf den Halbleiterschalter 20 kommutiert. Das vom Stromwandler 60 erzeugte und die Kommutierung signalisierende Signal wird der Schaltelektronik 50 zugeführt, die davon abhängig den Halbleiterschalter 20 wie im Folgenden beschrieben ansteuern kann.The time of the commutation to the IGBT of the semiconductor switch 20, which has already been turned on, can be detected by a current transformer 60 located there. The current converter 60 generates a signal as soon as a current begins to flow through the IGBTs of the semiconductor switch 20 (after the semiconductor switch 20 or IGBT has been switched on in step S22), i.e. the current flow commutes from the first mechanical contact arrangement 10 to the semiconductor switch 20. The signal generated by the current converter 60 and signaling the commutation is fed to the switching electronics 50, which can control the semiconductor switch 20 as a function of this, as described below.

Unmittelbar nach erfolgter Kommutierung kann die Schaltelektronik 50 den Halbleiterschalter 20 in der Weise ansteuern, dass die IGBTs des Halbleiterschalters 20 nach kurzer, über die Schaltelektronik 50 definierter bzw. vorgegebener Stromflusszeit bzw. Stromleitzeit t2 wieder sperrend werden, so dass der kommutierte Laststrom im Halbleiterschalter 20 innerhalb der definierten Zeitdauer zu null geführt wird. Die Stromflusszeit ist idealerweise über die Schaltelektronik 50 so bemessen, dass die Schaltstrecke mit der ersten und zweiten mechanischen Kontaktanordnung 10 bzw. 30 vollständig offen ist, d.h. die Schaltkontakte dauerhaft geöffnet sind und eventuelle Schaltprellvorgänge nicht mehr auftreten.Immediately after the commutation has taken place, the switching electronics 50 can control the semiconductor switch 20 in such a way that the IGBTs of the semiconductor switch 20 become blocking again after a short current flow time or current conduction time t2 defined or specified via the switching electronics 50, so that the commutated load current in the semiconductor switch 20 is led to zero within the defined period of time. The current flow time is ideally measured via the switching electronics 50 in such a way that the contact gap with the first and second mechanical contact arrangement 10 or 30 is completely open, i.e. the switching contacts are permanently open and any switching chatter processes no longer occur.

Durch die Ausstattung des Halbleiterschalters 20 mit einem antiseriellen IGBT ist eine solche Schaltanordnung sowohl für DC-Ströme mit beliebiger Stromflussrichtung als auf für Wechselspannungen unterschiedlicher Frequenz einsetzbar, wobei der Schaltzeitpunkt aufgrund der unabhängigen Versorgung des Ansteuermoduls nicht phasenwinkelabhängig ist.By equipping the semiconductor switch 20 with an anti-serial IGBT, such a switching arrangement can be used both for DC currents with any current flow direction and for AC voltages of different frequencies Switching time is not dependent on the phase angle due to the independent supply of the control module.

Während des Abschaltvorgangs im Halbleiterschalter 20 kommt es bei hohen Strömen zu hohen dI/dt-Werten, wodurch Spannungsspitzen deutlich oberhalb 1 kV entstehen können. Zum Schutz vor solchen Spannungsspitzen ist es zweckmäßig, dem Halbleiterschalter 20 ein Schutzorgan, z.B. in Form eines Varistors 70 vorzuschalten oder parallel zu schalten.During the turn-off process in the semiconductor switch 20, high currents result in high dI/dt values, as a result of which voltage peaks well above 1 kV can occur. To protect against such voltage peaks, it is expedient to connect a protective device, e.g. in the form of a varistor 70, upstream of the semiconductor switch 20 or to connect it in parallel.

Die vorliegende Erfindung eignet sich insbesondere zum Einsatz in Schützen, Leistungsschaltern und Motorschutzschaltern, die insbesondere für einen Betrieb mit Gleichströmen und/oder niederfrequenten Strömen ausgelegt sind. Sie ermöglicht das Schalten von hohen Gleichströmen und niederfrequenten Strömen bei einer vergleichsweise hohen elektrischen Lebensdauer. Weiterhin gestatten diese Eigenschaften die Realisierung von vergleichsweise kompakten Schaltgeräten für hohe Ströme.The present invention is particularly suitable for use in contactors, circuit breakers and motor protection switches that are designed in particular for operation with direct currents and/or low-frequency currents. It enables the switching of high direct currents and low-frequency currents with a comparatively long electrical service life. Furthermore, these properties allow the realization of comparatively compact switching devices for high currents.

BezugszeichenReference sign

1010
erste mechanische Kontaktanordnungfirst mechanical contact arrangement
2020
Halbleiterschaltersemiconductor switch
3030
zweite mechanische Kontaktanordnungsecond mechanical contact arrangement
4040
galvanisch getrennte Hilfsspulegalvanically separated auxiliary coil
5050
Schaltelektronikswitching electronics
6060
StromwandlerPower converter
7070
Varistorvaristor
100100
erste Elektrodefirst electrode
102102
zweite Elektrodesecond electrode
104104
erster Kontaktfirst contact
106106
zweiter Kontaktsecond contact
108108
erste Kontaktoberflächefirst contact surface
110110
zweite Kontaktoberflächesecond contact surface
112112
Materialabtragstellematerial removal point
112'112'
(partiell) eingeebnete Materialabtragstelle(partially) leveled material removal point
114114
Materialanhäufungsstellematerial accumulation point
114'114'
(partiell) eingeebnete Materialanhäufungsstelle(partially) leveled material accumulation site
116116
Lichtbögenelectric arc

Claims (10)

  1. Switching apparatus for carrying and disconnecting electric currents, comprising
    - a mechanical contact arrangement (10),
    - a semiconductor switch (20) which is connected in parallel with the mechanical contact arrangement (10), and
    - a switching electronics system (50) which is designed to switch the semiconductor switch (20) on and off during a switching operation of the mechanical contact arrangement (10) in order to commutate an electric current from the mechanical contact arrangement (10) to the semiconductor switch (20),
    characterized in that
    the switching electronics system (50) is configured to detect switching operations of the mechanical contact arrangement (10) and, depending on this, to control the switching on and off of the semiconductor switch (20) during a switching operation of the mechanical contact arrangement (10) in such a way that one or more electric arcs are produced in a targeted manner when the contacts of the mechanical contact arrangement are opened, by means of which contact surfaces (108, 110) of contacts (104, 106) of the mechanical contact arrangement (10) can be conditioned.
  2. Switching apparatus according to claim 1,
    characterized in that
    the switching electronics system (50) is configured to count the number of switching operations after an initialization in order to detect the switching operations and, when a predetermined number of switching operations is reached, to switch on the semiconductor switch (20) in a subsequent switching operation, in a manner delayed by a predetermined blocking time t1, after the contacts (104, 106) of the mechanical contact arrangement (10) have been opened.
  3. Switching apparatus according to either claim 1 or claim 2,
    characterized in that
    the switching electronics system (50) is configured, in order to detect the switching operations, to detect the switching power for each individual switching operation after initialization and, when a predetermined cumulative switching power is reached, to switch on the semiconductor switch (20) in a subsequent switching operation in a manner delayed by a predetermined blocking time t1 insofar as this claim is dependent on 1, or in a manner delayed by the predetermined blocking time t1 insofar as this claim is dependent on claim 2, after the contacts (104, 106) of the mechanical contact arrangement (10) have been opened.
  4. Switching apparatus according to either claim 2 or claim 3,
    characterized in that
    the predetermined blocking time t1 is selected depending on parameters of the switching apparatus in such a way that one or more electric arcs (116) can form between the contact surfaces (108, 110) of the contacts (104, 106) of the mechanical contact arrangement (10) which open during the blocking time, so that material melting can occur at the base points of the electric arcs (116) on the contact surfaces (108, 110) due to the current intensity of each electric arc (116).
  5. Switching apparatus according to any of the preceding claims,
    characterized in that
    it has a further mechanical contact arrangement (30) and the two mechanical contact arrangements (10, 30) are connected in series.
  6. Switching apparatus according to any of the preceding claims,
    characterized in that
    it has an auxiliary coil (40) which is galvanically isolated from the circuit of a switching drive for moving contacts of the mechanical contact arrangement (10) insofar as this claim is dependent on claims 1 to 4, or of the mechanical contact arrangement (10) and the further mechanical contact arrangement (30) insofar as this claim is dependent on claim 5, and is electromagnetically coupled to a coil of the switching drive in such a way that a voltage is generated therein when the voltage supply of the switching drive is switched off, which voltage is fed to the switching electronics system (50) for supply.
  7. Switching apparatus according to any of the preceding claims,
    characterized in that
    a current transformer (60) is provided for detecting the current flow through the semiconductor switch and generating a corresponding signal which is fed to the switching electronics system (50).
  8. Switchgear comprising
    - a switching apparatus according to any of the preceding claims and
    - a switching drive for moving contacts of the mechanical contact arrangement.
  9. Method for controlling a semiconductor switch (20) of a switching apparatus for carrying and disconnecting electric currents that has a mechanical contact arrangement (10) and a semiconductor switch (20) which is connected in parallel with the mechanical contact arrangement (10), wherein, in the method, switching operations of the mechanical contact arrangement (10) are detected and, depending on this, the switching on and off of the semiconductor switch (20) during a switching operation of the mechanical contact arrangement (10) is controlled in such a way that one or more electric arcs are produced in a targeted manner when the contacts of the mechanical contact arrangement are opened, by means of which contact surfaces (108, 110) of contacts (104, 106) of the mechanical contact arrangement (10) can be conditioned.
  10. Method according to claim 9, characterized in that it is executed by the switching electronics system (50) designed to switch the semiconductor switch (20) on and off, the switching electronics system (50) being implemented in particular by a processor and a memory in which a program is stored which configures the processor to execute a method according to claim 9.
EP17716244.3A 2016-05-03 2017-04-10 Switching device for conducting and interrupting electrical currents Active EP3453042B1 (en)

Applications Claiming Priority (2)

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DE102016108245.7A DE102016108245A1 (en) 2016-05-03 2016-05-03 Switching device for guiding and separating electric currents
PCT/EP2017/058566 WO2017190914A1 (en) 2016-05-03 2017-04-10 Switching device for conducting and interrupting electrical currents

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GB2579636B (en) * 2018-12-07 2022-10-26 Eaton Intelligent Power Ltd Circuit breaker
CN110988669B (en) * 2019-12-24 2022-08-26 山东钢铁股份有限公司 Fault detection method and device for high-voltage circuit breaker

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US5179290A (en) * 1990-12-17 1993-01-12 Raymond Corporation System of maintaining clean electrical contacts
DE19711622C2 (en) * 1997-03-20 2002-02-28 Michael Konstanzer Method and device for operating an electrical load connected to a circuit
DE19714655C2 (en) 1997-04-09 2002-10-17 Abb Patent Gmbh Method and device for conditioning a vacuum interrupter
DE19942971A1 (en) 1999-09-09 2001-03-15 Moeller Gmbh Device for internal pressure measurement, voltage conditioning and current conditioning of vacuum interrupters and method therefor
DE102013114259A1 (en) 2013-12-17 2015-06-18 Eaton Electrical Ip Gmbh & Co. Kg Switching device for guiding and separating electric currents

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