EP3380876A1 - Atomic layer deposition process for fabricating dielectric metasurfaces for wavelengths in the visible spectrum - Google Patents
Atomic layer deposition process for fabricating dielectric metasurfaces for wavelengths in the visible spectrumInfo
- Publication number
- EP3380876A1 EP3380876A1 EP16869282.0A EP16869282A EP3380876A1 EP 3380876 A1 EP3380876 A1 EP 3380876A1 EP 16869282 A EP16869282 A EP 16869282A EP 3380876 A1 EP3380876 A1 EP 3380876A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- dielectric
- substrate
- over
- resist layer
- optical component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001429 visible spectrum Methods 0.000 title claims abstract description 60
- 238000000034 method Methods 0.000 title claims description 80
- 238000000231 atomic layer deposition Methods 0.000 title claims description 60
- 230000008569 process Effects 0.000 title description 45
- 239000000758 substrate Substances 0.000 claims abstract description 76
- 230000003287 optical effect Effects 0.000 claims abstract description 65
- 238000004519 manufacturing process Methods 0.000 claims abstract description 31
- 238000000151 deposition Methods 0.000 claims abstract description 30
- 230000008021 deposition Effects 0.000 claims abstract description 23
- 238000000059 patterning Methods 0.000 claims abstract description 3
- 239000003989 dielectric material Substances 0.000 claims description 31
- 230000003746 surface roughness Effects 0.000 claims description 14
- 238000001020 plasma etching Methods 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 5
- 230000009477 glass transition Effects 0.000 claims description 5
- 238000002834 transmittance Methods 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 139
- 239000004408 titanium dioxide Substances 0.000 description 65
- 239000010410 layer Substances 0.000 description 49
- 238000013461 design Methods 0.000 description 28
- 239000000463 material Substances 0.000 description 26
- 239000002086 nanomaterial Substances 0.000 description 21
- 238000004088 simulation Methods 0.000 description 14
- 230000010287 polarization Effects 0.000 description 13
- 230000005540 biological transmission Effects 0.000 description 11
- 239000002243 precursor Substances 0.000 description 11
- -1 AI2O3) Chemical compound 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 230000006870 function Effects 0.000 description 10
- SDGKUVSVPIIUCF-UHFFFAOYSA-N 2,6-dimethylpiperidine Chemical compound CC1CCCC(C)N1 SDGKUVSVPIIUCF-UHFFFAOYSA-N 0.000 description 9
- 238000005259 measurement Methods 0.000 description 9
- 229950005630 nanofin Drugs 0.000 description 9
- 238000010521 absorption reaction Methods 0.000 description 8
- 230000005684 electric field Effects 0.000 description 8
- 239000005350 fused silica glass Substances 0.000 description 8
- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000004630 atomic force microscopy Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 238000000572 ellipsometry Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 238000013459 approach Methods 0.000 description 4
- 238000012512 characterization method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 3
- 238000000149 argon plasma sintering Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000000609 electron-beam lithography Methods 0.000 description 3
- 239000002061 nanopillar Substances 0.000 description 3
- 229910052755 nonmetal Inorganic materials 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 238000000391 spectroscopic ellipsometry Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical group CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 238000000089 atomic force micrograph Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000012707 chemical precursor Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000000411 transmission spectrum Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 101100129500 Caenorhabditis elegans max-2 gene Proteins 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005388 cross polarization Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000005274 electronic transitions Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229940078552 o-xylene Drugs 0.000 description 1
- 239000011022 opal Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000005477 standard model Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 239000013598 vector Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/14—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45555—Atomic layer deposition [ALD] applied in non-semiconductor technology
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
- G02B1/005—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials made of photonic crystals or photonic band gap materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/02—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semi-conductors
Definitions
- Metasurfaces can be used to form optical components. However, metasurfaces have been inefficient in the visible spectrum. It is desirable to fabricate metasurfaces that have improved efficiency in the visible spectrum.
- a method of fabricating a visible spectrum optical component includes: 1) providing a substrate; 2) forming a resist layer over a surface of the substrate; 3) patterning the resist layer to form a patterned resist layer defining openings exposing portions of the surface of the substrate; 4) performing deposition to form a dielectric film over the patterned resist layer and over the exposed portions of the surface of the substrate, wherein a top surface of the dielectric film is above a top surface of the patterned resist layer; 5) removing a top portion of the dielectric film to expose the top surface of the patterned resist layer and top surfaces of dielectric units within the openings of the patterned resist layer; and 6) removing the pattemed resist layer to retain the dielectric units over the substrate.
- performing deposition includes performing atomic layer deposition.
- the substrate is a glass substrate.
- sidewalls of the openings of the pattemed resist layer are substantially perpendicular to the surface of the substrate.
- the openings of the patterned resist layer have widths not significantly greater than or less than a design wavelength of incident light, such as no greater than 400 nm.
- the openings of the pattemed resist layer have a maximum width w max
- performing deposition includes depositing the dielectric film to a thickness 3 ⁇ 4i m and filling the openings of the patterned resist layer, and 3 ⁇ 4 lm > w max 2.
- performing deposition is carried out at a temperature below 115 °C.
- the dielectric film includes an oxide
- removing the top portion of the dielectric film includes performing reactive ion etching.
- At least one of the dielectric units has a height of 100 nm or greater.
- At least one of the dielectric units has a width no greater than 100 nm.
- a method of fabricating a metasurface includes: 1) providing a substrate and a patterned layer over the substrate, the patterned layer defining openings; 2) performing atomic layer deposition to deposit a conformal film over the patterned layer and extending into the openings of the patterned layer; 3) removing a top portion of the conformal film to expose top surfaces of metasurface units within the openings of the patterned layer; and 4) removing the pattemed layer to retain the metasurface units over the substrate.
- performing atomic layer deposition includes depositing a dielectric material having an imaginary part of a refractive index no greater than 0.1 over the visible spectrum.
- performing atomic layer deposition includes depositing a dielectric material having a real part of a refraction index of at least 2 over the visible spectrum.
- the patterned layer includes a resist having a glass transition temperature, and performing atomic layer deposition is carried out at a temperature below the glass transition temperature of the resist.
- At least one of the metasurface units has an aspect ratio of at least 2: 1.
- a visible spectrum optical component includes: 1) a transparent substrate including a surface; and 2) dielectric units over the surface of the transparent substrate, wherein at least one of the dielectric units has a dimension along a short axis, a dimension along a long axis that is different from the dimension along the short axis, and a surface roughness of no greater than 5 nm.
- the dimension along the short axis is no greater than 200 nm
- the dimension along the long axis is substantially perpendicular to the surface of the transparent substrate and is at least twice the dimension along the short axis.
- a ratio of the dimension along the long axis to the dimension along the short axis is at least 5: 1.
- At least one of the dielectric units has a sidewall that is substantially perpendicular to the surface of the transparent substrate.
- the surface roughness is no greater than 2 nm.
- the dielectric units include a dielectric material that is amorphous or single-crystalline.
- the dielectric units include a dielectric material having a light transmittance of at least 50% over the visible spectrum.
- the dielectric units include a dielectric material having an imaginary part of a refractive index no greater than 0.1 over the visible spectrum, and a real part of the refraction index of at least 2 over the visible spectrum.
- the optical component is configured to introduce an arbitrary or adjustable phase profile on incident light.
- the optical component is a lens, a collimator, a polarizer, or a hologram.
- At least one of the dielectric units has a circular cross-section or other cross-section of substantially even rotational symmetry.
- a function of the optical component is dependent on a polarization of incident light.
- a function of the optical component is substantially independent of a polarization of incident light.
- Fig. 1 Fabrication process for forming a visible spectrum dielectric metasurface based on atomic layer deposition (ALD).
- ALD atomic layer deposition
- A Top view of dielectric units.
- B Tilted view of the dielectric units.
- FIG. 3 Broadband efficient meta-grating in the visible spectrum.
- A Schematic representation of the meta-grating.
- B Simulation results for the meta-grating.
- Fig. 4 Amorphous titanium dioxide material properties.
- A Measured real part (squares) and imaginary part (circles) of the refractive index (n and k) as a function of wavelength. The full set of ellipsometry data used in obtaining these optical functions is included in the Example section.
- B Atomic force microscope image of a typical T1O2 film deposited via ALD. The film is an atomically smooth surface with root mean square (RMS) roughness of about 0.738 nm.
- RMS root mean square
- Fig. 5 Fabrication process for dielectric metasurfaces.
- EBR Electron beam resist
- B Inverse of a final metasurface partem imprinted into the EBR by electron beam lithography and subsequent development of the pattern (top view). The boxed area is an expanded cross-section of a maximum feature width, w.
- C Initial T1O2 deposition via ALD conformally coats sidewalls and top of the EBR and exposed substrate (side view). Tetrakis(dimethylamido)titanium (TDMAT) molecule used for ALD is also shown.
- TDMAT Tetrakis(dimethylamido)titanium
- A Large-scale view of a fabricated metasurface hologram composed of T1O2 nanofins.
- B Zoomed top view of the metasurface showing individual nanofins. The fabricated nanofins are substantially free from residual resist and have dimensions ⁇ 10 nm of designed dimensions of 250 nm ⁇ 85 nm. It can also be seen that, with this fabrication technique, gaps between structures as small as about 6 nm can be achieved.
- C Top view of structures with lateral dimensions of about 40 nm.
- D Cross-section (side view) of nanofins exhibiting vertical sidewalls with a height of about 600 nm. The oscillations in contrast between nanofins result from shadowing effects during deposition of a metal film used to prevent charging while imaging the samples.
- Fig. 7. Measured absolute efficiencies and holographic images.
- A-C Measured (square markers) and simulated (solid line) hologram efficiencies.
- An absolute efficiency is specified as a ratio of a total optical power of a hologram to a total optical power transmitted through an aperture of the same size as the hologram (about 300 ⁇ 300 ⁇ 2 ).
- the vertical dashed line marks the design wavelengths of each device, and device dimensions are (A) about 200 nm ⁇ about 90 nm, (B) about 250 nm ⁇ about 85 nm, and (C) about 410 nm about 85 nm.
- D-I Holographic images covering the visible spectrum.
- the input wavelength is (D) about 480 nm, (E) about 520 nm, (F) about 540 nm, (G) about 600 nm, (H) about 620 nm, and (I) about 640 nm. All images were obtained from the device designed for about 480 nm and show the broadband behavior of a single device. The bright spot in the center of the image is due to the propagation of zero-order light.
- Fig. 8 Raw ellipsometry data used to determine T1O2 optical constants, ⁇ and ⁇ , for a T1O2 film on a silicon substrate as a function of wavelength.
- the lighter shaded squares and circles are the values of ⁇ for angles of about 55° and about 75°, respectively.
- the darker shaded squares and circles are the ⁇ values for angles of about 55° and about 75°, respectively.
- the lines are generated data from the model described in Optical Characterization.
- Fig. 9 Atomic force microscope image of a bare glass substrate with a root mean square roughness of about 0.698 nm.
- Fig. 10 X-ray diffraction of ALD T1O2. There are no observable diffraction peaks from any T1O2 polymorphs. The peaks that appear in the scan result from the X-ray diffraction stage as can be seen from comparing the scan with (top) and without (bottom) the sample.
- Fig. 11 Phase map of Harvard logo used to generate holograms for a design wavelength of about 480 nm. Inset shows a 150 ⁇ 150 pixel phase distribution. This phase information was translated to nanofin rotations.
- Fig. 12 Simulated electric field profiles at a design wavelength.
- the x and z components of the electric fields exiting the pillar, at each wavelength are out of phase by about ⁇ radians, as specified for PB phase.
- Fig. 13 Simulated transmission spectra for T1O2 nanofins on a periodic lattice at design wavelengths of (A) about 480 nm, (B) about 532 nm, and (C) about 660 nm.
- the solid (dashed) line corresponds to an incident plane wave source polarized along the long (short) axis of the rectangular nanofins.
- Fig. 14 Schematic of measurement setup for collecting holographic images.
- LP linear polarizer
- A/4 quarter waveplate
- SuperK Supercontinuum laser.
- Fig. 15 Simulation of full 2ji-phase coverage using T1O2 nanopillars with varied diameters.
- the white dashed lines show the placement of the T1O2 nanopillars, and the diameter of each pillar is listed below.
- the black dashed line is set to about 600 nm, corresponding to the height of the nanofins.
- Metasurfaces encompass artificial, near-flat or planar materials composed of units that provide control over a phase and a polarization of an optical field, where dimensions of the metasurface units are subwavelength within a spectrum of interest.
- metasurfaces can introduce changes in phase and polarization within subwavelength distances.
- transmissive dielectric metasurfaces which are composed of subwavelength-spaced dielectric units and have near-flat profiles compared with refractive optics, can provide control over optical wavefronts while circumventing Ohmic losses associated with plasmonic metasurfaces.
- dielectric metasurfaces which provide a gradual phase change over a subwavelength or a wavelength- comparable distance. This is in contrast to plasmonic metasurfaces, which introduce an abrupt change in phase.
- Metasurfaces including dielectric units further provide several advantages over metallic metasurfaces, such as greater scattering cross section, lower loss, improved transmission and reduction of undesired polarization conversion.
- a metasurface including dielectric units is referred to generally herein as a dielectric metasurface (DM).
- DMs can expand on the effects of traditional optical components, providing unprecedented control over optical wavefronts, as well as providing for design and implementation of near-flat and compact optical components, a technologically-important advancement in optics.
- DM has several advantages over a metallic metasurface and traditional optical components, and has potential for use in several applications, there has been an important hurdle to overcome with DMs: implementation for use in the visible spectrum encompassing wavelengths in a range of about 400 nanometers (nm) to about 700 nm.
- DMs may be highly lossy in the visible spectrum when fabricated using silicon. Materials and fabrication techniques are desired to extend the use of DMs into the technologically-important visible spectrum while maintaining a high efficiency.
- Some desirable characteristics of DMs for the visible spectrum include one or more of the following: (1) a high index of refraction at visible wavelengths to ensure strong confinement of light propagating through dielectric units and thus realize a desired phase change of an exiting wavefront, and to decrease device size, (2) broadband transparency (e.g., low material absorption) over the visible spectrum, (3) smooth surfaces, and (4) high aspect ratio dielectric units, where an aspect ratio is specified as a ratio of a dimension of a dielectric unit along its long axis (e.g., a height along a direction substantially perpendicular to a surface of a substrate over which the dielectric unit is disposed) and a dimension of the dielectric unit along its short axis or an axis substantially perpendicular to the long axis (e.g., a width or a diameter along a direction substantially parallel to the surface of the substrate).
- a DM suitable for use in the visible spectrum, or a material selected for the DM may possess one or more of the mentioned desirable characteristics, but may also
- Some embodiments are directed to a fabrication process using atomic layer deposition
- ALD ALD that provides for the formation of high efficiency, visible spectrum DMs having the desirable characteristics mentioned above.
- the fabrication process can implement cleanroom process operations such as lithography and reactive ion etching, reproducibly providing deep subwavelength dielectric units with desired geometries and low loss in the visible spectrum.
- metal and non-metal oxides such as an oxide of aluminum (e.g., AI2O 3 ), silicon (e.g., S1O2), hafnium (e.g., HfC ⁇ ), zinc (e.g., ZnO), magnesium (e.g., MgO), or titanium (e.g., T1O2)
- metal and non-metal nitrides such as nitrides of silicon (e.g., S1 3 N4), boron (e.g., BN), or tungsten (e.g., WN)
- metal and non-metal sulfides and pure elements can be deposited via ALD.
- one or more deposition cycles can be performed by sequentially exposing a substrate, or a portion of the substrate, to deposition gases of chemical precursors or reactants.
- the precursors react and form at least a partial layer of a dielectric material on the substrate during a deposition cycle, and further deposition cycles can be performed until a desired thickness is attained.
- Composite coatings of different dielectric materials also can be formed using ALD.
- titanium dioxide is selected due to its high refractive index and low loss in the visible spectrum, but the fabrication process can use other dielectric materials, such as other dielectric materials selected depending on a desired end application.
- Fig. 4A provides a plot of optical properties of a T1O 2 film in a wavelength range from ultraviolet (UV) (about 243 nm) to near-infrared (about 1,000 nm).
- the real part, n represents phase accumulation in the material and is a refractive index (or an index of refraction), while the imaginary part, k, is related to optical absorption in the material.
- the as-deposited T1O 2 film has some loss (optical absorption) in the UV portion of the spectrum; however, from about 360 nm, the loss drops below a detection threshold of a measurement instrument and stays below that threshold up to the longest tested wavelength of about 1,000 nm.
- the refractive index of T1O 2 is high throughout the visible range, ranging from about 2.6 at about 400 nm to about 2.3 at about 700 nm. This allows for strong confinement of light and enhanced phase accumulation within a reduced thickness of an optical component including a visible spectrum DM formed from T1O 2 .
- Suitable dielectric materials include those having values of k of no greater than about 0.2, no greater than about 0.15, no greater than about 0.1, no greater than about 0.05, or no greater than about 0.01, over the visible spectrum or a design or working wavelength in the visible spectrum, and having values of n of at least about 1.5, at least about 1.8, at least about 2, at least about 2.1, at least about 2.3, or at least about 2.5, over the visible spectrum or the design or working wavelength in the visible spectrum.
- Suitable dielectric materials that are transparent in the visible spectrum can have a light transmittance of at least about 40%, at least about 50%, at least about 60%, at least about 70%, at least about 80%, at least about
- Fig. 1 shows a fabrication process for forming a visible spectrum DM based on a conformal chemical vapor deposition approach such as ALD, according to some embodiments.
- the process begins (Fig. l a) with providing a substrate that is transparent in the visible spectrum, such as shown, by way of example, as one including fused silica.
- Suitable substrates that are transparent in the visible spectrum can have a light transmittance of at least about 40%, at least about 50%, at least about 60%, at least about 70%, at least about 80%, at least about 85%, at least about 90%, or at least about 95%, over the visible spectrum or a design or working wavelength in the visible spectrum.
- a resist e.g., an electron beam resist or a photoresist
- Fig. lb a resist
- the thickness of the resist layer is a parameter which sets a height of resulting dielectric units in the fabricated DM, contributes to a phase of an exiting light, and affects an efficiency of the DM.
- the spin rate and a viscosity of the resist can be controlled to adjust the thickness of the applied resist layer. As an example, a spin rate of about 5,000 rpm (revolutions per minute) while applying an electron beam resist of a particular viscosity results in a thickness of a resist layer of about 400 nm.
- the resist layer is exposed (e.g., using electron beam lithography or photolithography) and developed (Fig. l c), forming an inverse pattern for forming the dielectric units.
- a resulting patterned resist layer is formed with, or defines, gaps, openings, or recesses exposing portions of a surface of the substrate.
- the openings can have an aspect ratio greater than about one, such as at least about 1.5: 1 , at least about 2: 1, at least about 3 : 1, at least about 4: 1, or at least about 5: 1 , and up to about 10: 1 or greater, or up to about 20: 1 or greater.
- ALD is performed to deposit (Fig. I d) a film of a dielectric material over the patterned resist layer and the exposed portions of the surface of the substrate.
- a feature of ALD exploited in the fabrication process to achieve high aspect ratio dielectric units with smooth surfaces is the conformal nature of the film as it is deposited.
- top and sidewall surfaces of the patterned resist layer and the exposed portions of the surface of the substrate are conformally coated by the dielectric material using ALD.
- the film takes on a shape of the openings in the patterned resist layer.
- an opening having substantially vertical sidewalls results in a dielectric unit having substantially vertical sidewalls, which allow precise control over a phase of an exiting wavefront with reduced phase errors.
- top-down etching techniques can introduce sloped sidewalls, which can lead to phase errors.
- the conformal coating provides for dielectric units having exceptionally smooth surfaces so as to reduce losses from scattering, such as having a root mean square (RMS) surface roughness of no greater than about 20 nm, no greater than about 15 nm, no greater than about 10 nm, no greater than about 5 nm, no greater than about 4 nm, no greater than about 3 nm, no greater than about 2 nm, or no greater than about 1 nm.
- RMS root mean square
- a first ALD cycle is performed to deposit the dielectric material over the substrate held or housed within a deposition chamber, followed by performing a second ALD cycle to deposit the dielectric material over the substrate, followed by performing a third ALD cycle to deposit the dielectric material over the substrate, and so on until a desired amount of the dielectric material is deposited.
- performing each ALD cycle includes exposing the substrate to deposition gases of chemical precursors or reactants.
- a first precursor is a titanium-containing precursor, such as an organometallic compound of titanium
- the second precursor is an oxygen-containing precursor.
- the first precursor and the second precursor react and form at least a partial layer of the dielectric material over the patterned resist layer and the exposed portions of the surface of the substrate. Accordingly, ALD is used to successively deposit additional dielectric material of the film in a layer-by-layer fashion until the film fills the openings in the patterned resist layer (Fig. le). Each deposited layer conformally coats a previously deposited layer.
- TALO (Fig. ld-e) is controlled to be lower than that used for ALD in other contexts.
- ALD can be used to deposit films at about 150 °C or higher; however, for certain resists, temperatures above about 115 °C can cause a resist to reflow so that a resist pattern deteriorates.
- the temperature is controlled or maintained below about 115 °C, such as about 110 °C or below, about 105 °C or below, about 100 °C or below, or about 90 °C.
- an amount of the dielectric material deposited in the ALD cycles (Fig.
- ld-e is a function of a maximum desired feature size (e.g., a feature width or diameter) of a dielectric unit (e.g., w- x in Fig. Id).
- the dielectric film may be deposited to a thickness, 3 ⁇ 4 m , over the patterned resist layer to achieve the maximum desired feature size.
- 3 ⁇ 4i m is at least about 50 nm greater than w- x 2.
- the thickness 3 ⁇ 4i m corresponds to an amount of the deposited dielectric material that would cover a planar surface with an uniformly thick film of the dielectric material having the thickness 3 ⁇ 4i m , and corresponds a thickness of a top portion of the dielectric film deposited over the top surface of the patterned resist layer and extending over the openings of the patterned resist layer.
- blanket etching is performed to remove the top portion of the dielectric film and expose (Fig. If) the top surface of the patterned resist layer and top surfaces of resulting dielectric units disposed in the openings of the patterned resist layer.
- reactive ion etching may be used, such as using a mixture of Cl 2 gas and BCI 3 gas, to remove the top portion of the dielectric film to an etch depth substantially equal to the thickness 3 ⁇ 4i m , although an etch depth greater than the thickness 3 ⁇ 4i m is also contemplated, such as including removing a top portion of the patterned resist layer via an etch depth of 3 ⁇ 4i m + about 10 nm. In such fashion, excess dielectric film is removed, and the patterned resist layer (or a residual thereof) is exposed.
- the patterned resist layer is removed (Fig. lg) by exposing to a resist removal solvent, leaving high aspect ratio dielectric units of the DM over the substrate, and having an aspect ratio greater than about one, such as at least about 1.5: 1, at least about 2: 1, at least about 3: 1, at least about 4: 1, or at least about 5: 1, and up to about 10: 1 or greater, or up to about 20: 1 or greater.
- Fig. 2a-b shows scanning electron microscope (SEM) images of dielectric units formed using the fabrication process of some embodiments of this disclosure.
- the fabrication process can produce arbitrary nanostructures such as nanopillars or nanofins of varying widths, and can attain such widths on a visible spectrum subwavelength scale.
- the resulting nanostructures are anisotropic with sidewalls substantially perpendicular to a surface of a substrate, as shown in Fig. 2b providing a 30 degree tilted view of the nanostructures in Fig. 2a.
- a feature width down to about 25 nm on an about 75 nm pitch (center-to-center spacing between adjacent dielectric units), with a height of the dielectric units from about 100 nm to about 500 nm, can be attained by way of example. Further feature width reduction can be attained with the fabrication process of some embodiments of this disclosure. For example, dielectric units with widths of about 10 nm or less are encompassed by this disclosure. Dielectric units with high aspect ratios can be attained with the fabrication process. For example, dielectric units with heights up to about 500 nm or greater or up to about 1,000 nm or greater can be attained.
- widths of dielectric units are less than a design wavelength of incident light in the visible spectrum, such as no greater than about 400 nm, no greater than about 300 nm, no greater than about 200 nm, no greater than about 150 nm, no greater than about 100 nm, no greater than about 50 nm, about 50 nm to about 200 nm, or about 25 nm to about 200 nm.
- dielectric units can have generally rectangular or other elongated cross-sections (along or projected onto a plane parallel to a surface of a substrate over which the dielectric units are disposed) having a width and a length, and where the length is greater than the width, and the length and the width are less than a design wavelength of incident light in the visible spectrum, such as no greater than about 400 nm, no greater than about 300 nm, no greater than about 200 nm, no greater than about 150 nm, no greater than about 100 nm, no greater than about 50 nm, about 50 nm to about 200 nm, or about 25 nm to about 200 nm.
- dielectric units can have generally circular cross-sections or other even rotationally symmetric cross-section (along or projected onto a plane parallel to a surface of a substrate over which the dielectric units are disposed) having a diameter, and the diameter is less than a design wavelength of incident light in the visible spectrum, such as no greater than about 400 nm, no greater than about 300 nm, no greater than about 200 nm, no greater than about 150 nm, no greater than about 100 nm, no greater than about 50 nm, about 50 nm to about 200 nm, or about 25 nm to about 200 nm.
- a design wavelength of incident light in the visible spectrum such as no greater than about 400 nm, no greater than about 300 nm, no greater than about 200 nm, no greater than about 150 nm, no greater than about 100 nm, no greater than about 50 nm, about 50 nm to about 200 nm, or about 25 nm to about 200 nm.
- a pitch of adjacent dielectric units is less than a design wavelength of incident light in the visible spectrum, such as no greater than about 400 nm, no greater than about 300 nm, no greater than about 200 nm, no greater than about 150 nm, no greater than about 100 nm, no greater than about 50 nm, about 50 nm to about 200 nm, or about 25 nm to about 200 nm.
- dielectric units can have substantially consistent widths or diameters along their long axes, such that a width or diameter at a top end of a dielectric unit is substantially the same as a width or diameter at a bottom end of the dielectric unit. It is noted that the above-mentioned dimensions are also applicable for openings of a patterned resist layer within which dielectric units are formed during the fabrication process of some embodiments.
- Fig. 3a shows a representation of a broadband efficient meta-grating in the visible spectrum, showing the versatility of optical components that can be formed using the fabrication process of some embodiments of this disclosure.
- DRWs dielectric ridge waveguides
- an absolute efficiency of greater than about 50% is achieved over much of the visible spectrum, where the absolute efficiency is specified for the results in Fig. 3b as a ratio of transmitted power of light in the +1 order to an input power of light.
- an absolute efficiency of an optical component including a DM of some embodiments can be specified as a ratio of transmitted power of light having a designed property of the optical component to an input power of light, and the absolute efficiency can be greater than about 50% over the visible spectrum, or a design or working wavelength in the visible spectrum, such as at least about 55%, at least about 60%, at least about 65%, at least about 70%, or at least about 75%, and up to about 80% or greater, or up to about 85% or greater.
- the fabrication process of some embodiments has been discussed with respect to metasurfaces, the fabrication process can be used more generally to form high performance photonics components such as photonic crystals and waveguides.
- Metasurfaces encompass planar optical components that can overcome the constraints of refractive and diffractive optics.
- Dielectric metasurfaces are typically constrained to transparency windows at infrared wavelengths because of significant optical absorption and loss at visible wavelengths.
- materials and nanofabrication techniques be developed to extend dielectric metasurfaces across the visible spectrum and to allow applications such as high numerical aperture lenses, color holograms, and wearable optics.
- this example demonstrates high performance dielectric metasurfaces in the form of holograms for red, green, and blue wavelengths with high absolute efficiency (> about 78%).
- Atomic layer deposition of amorphous titanium dioxide is performed to attain surface roughness of less than about 1 nm and negligible optical loss.
- a process for fabricating dielectric metasurfaces is used which allows anisotropic, subwavelength-spaced dielectric nanostructures to be produced with shape birefringence. This process is capable of realizing various high efficiency metasurface optical components, such as metalenses and axicons.
- the material should have negligible absorption loss (e.g., k ⁇ 0) with a relatively high refractive index (e.g., n > about 2) at visible wavelengths. Although a negligible absorption is a condition for high transmission efficiency, a high refractive index ensures strong confinement of light, which allows full control over a phase of an exiting wavefront (phase changes from 0 to 2 ⁇ ).
- the material should be optically smooth, having a surface roughness that is much smaller than a wavelength of light. High surface roughness introduces extraneous light scattering, which can be a significant source of loss. To reduce roughness, the material should be amorphous or single-crystalline, as grain boundaries in poly crystalline materials can increase roughness and act as light scattering centers.
- T1O2 is selected as a base material because it has a transparency window (k ⁇ 0) for wavelengths longer than about 360 nm and its inter-band transition lies just outside of the visible spectrum, resulting in a sufficiently high index of refraction for strong light-matter interactions.
- T1O2 is deposited by atomic layer deposition (ALD) at about 90 °C with tetrakis(dimethylamido)titanium (TDMAT) as a precursor due to its high deposition rate and absence of defect-driven absorption that may occur with TiC -based precursors. Additionally, use of an ALD process offers several advantages. ALD is a self-limiting process providing conformal coverage and monolayer control of a film thickness.
- the conformal nature of the technique is desirable to produce high aspect ratio nanostructures.
- the uniform and monolayer coverage yields smooth films with reduced defects compared to those prepared via sputtering or evaporation.
- the ALD process allows precise control of a material phase of the deposited T1O2, producing amorphous, rutile, or anatase films, depending on the deposition temperature.
- Fig. 4 A shows measured optical properties of a T1O2 film from
- the bandgap, E gi is determined to be about 3.456 eV (the full set of fitting parameters (Table 1) and raw ellipsometry data (Fig. 8) are included below). This value of the bandgap is in good agreement with previously reported values for amorphous T1O2.
- the T1O2 films also exhibit surface roughness that is much smaller than the incident wavelength, as characterized by atomic force microscopy (AFM).
- Fig. 4B shows an AFM scan of a typical T1O2 film deposited on a fused silica substrate. The scan has a root mean square (RMS) roughness of about 0.738 nm, which is on the order of the surface roughness of the underlying substrate (Fig. 9). Due to the absence of grain boundaries verified by AFM, coupled with the X-ray diffraction data (Fig. 10), it can be concluded that the material is amorphous.
- the measured roughness of the amorphous T1O2 is an order of magnitude less than other phases such as poly crystalline rutile or anatase. The latter two phases generally have grain boundaries and RMS roughness as high as about 5-10 nm, both of which contribute to light-scattering loss.
- Fig. 5 To achieve highly efficient metasurface devices while preserving the optical properties of ALD-prepared T1O2, the fabrication process shown in Fig. 5 is used.
- An electron beam resist (EBR) is spun onto a fused silica substrate to produce a layer with thickness, t r£S i St (Fig. 5A). Control of t r£S i St is desired because it sets a height of final nanostructures.
- the resist is patterned using electron beam lithography and is subsequently developed in solution to remove the exposed EBR. This partem is the inverse of a final metasurface (Fig. 5B).
- the exposed sample is transferred to an ALD chamber set to about 90
- the gaseous T1O2 precursor (TDMAT) coated substantially all exposed surfaces, producing a conformal film on top and sidewalls of the
- the ALD process is allowed to reach a specific thickness such that all features are completely filled with Ti0 2 . Because the conformal ALD process fills exposed features from both sides, the total ALD film thickness is 3 ⁇ 4 lm ⁇ w/2, where w is a maximum width of all gaps or recesses (Fig. 5D). In practice, the deposition is allowed to proceed well beyond the lower threshold of half the feature width to ensure that T1O2 had sufficiently diffused into all pores and that there are no voids in the final nanostructures.
- the residual T1O2 film that coats a top surface of the resist is removed by reactive ion etching the sample in a mixture of BCI3 and CI2 gas (about 8:2), similar to a planarization technique.
- the etch depth was substantially equal to 3 ⁇ 4 lm so that the etching process exposes the underlying resist and the top of the nanostructures (Fig. 5E).
- the remaining resist is removed to retain the nanostructures that form the metasurface (Fig. 5F). In this way, nanostructures of heights t KS i St are obtained while depositing a film of thickness 3 ⁇ 4im 3 ⁇ 4 w/2, which is time-saving and efficient.
- This approach is different from liftoff techniques, which generally cannot be used due to a conformal coating of ALD films.
- creating high aspect ratio nanostructures via dry etching of T1O2, similar to other dielectric materials, is difficult and can lead to increased sidewall roughness.
- This ALD process is also different from techniques where patterns created are generally fixed by a set template (e.g., anodic alumina or inverse opal).
- the ALD process allows flexibility to form more complex nanostructures because ALD is used directly on an exposed EBR.
- Fig. 6 shows scanning electron microscope (SEM) images of a fabricated metasurface hologram. As seen in Fig. 6A, large areas are densely patterned with subwavelength-spaced T1O2 nanofins. This ultimately ensures that a majority of incident light is imprinted with a desired phase, higher diffraction orders are suppressed, and holographic images are produced with high efficiency.
- Fig. 6B shows an SEM image of the metasurface at high magnification, allowing resolution of individual nanofins.
- Fig. 6B With this process, extremely small spacing between individual nanofins can be attained, as shown by an about 6-nm gap in Fig. 6B.
- the structures in this case have dimensions of 250 nm ⁇ 90 nm, but the process also can produce structures with dimensions as small as about 40 nm (Fig. 6C).
- FIG. 6D shows a cross-section SEM image of the nanofins (vertical direction in the image is the direction of light propagation). It is observed that the angle of the nanostructures in the vertical direction is about 89°; that is, the nanostructures are highly anisotropic. This anisotropy is despite the fact that the nanostructures shown here are relatively tall compared with their other dimensions, with heights of about 600 nm. Similarly, no void formation is detected in the center of the nanofins. From the SEM images, it can also be seen that the final nanostructures have reduced top surface and sidewall roughness.
- metasurface holograms are designed to have peak efficiencies at wavelengths of about 480, about 532, and about 660 nm.
- a desired phase via rotation of the birefringent T1O2 nanofins is imparted as shown in Fig. 6, based on geometric or Pancharatnam-Berry (PB) phase.
- PB phase Pancharatnam-Berry
- An advantage of the PB phase is that the imparted phase is wavelength-independent (just the efficiency changes with wavelength), thus providing a desirable platform to test the performance of the metasurface over the entire visible range.
- the phase map of a holographic image, the binary Harvard logo is computed by way of the Gerchberg-Saxton phase-retrieval technique (Fig. 1 1).
- An absolute efficiency is specified as a total optical power of the reconstructed Harvard logo divided by an optical power measured through an about 300 ⁇ about 300 ⁇ 2 square aperture, which is the same size as the hologram (see below for measurement details and Fig. 14).
- the experimental results generally follow the simulation data and reach maxima of about 82, about 81 , and about 78% near the design wavelengths of about 480, about 532, and about 660 nm, respectively.
- holographic images can be generated across the visible spectrum from a single design.
- Fig. 7D-I shows the holographic images across the visible spectrum for the hologram with a design wavelength of about 480 nm.
- the subwavelength spacing and oversampling of the phase map can be seen in the images because there is sharp resolution of fine features such as the word "VERITAS" at the top of the Harvard crest.
- the bright spot near the center of the cross of the Harvard logo is from the zero order.
- the ratio of the intensity in the zero order to the total intensity contained in the hologram image is about 1%.
- T1O2 properties and fabrication process extend beyond this specific type of metasurface.
- simulations using the measured optical constants of T1O2 and structural dimensions achievable with the fabrication process show that pillar dimensions can be varied to provide full 2ji-phase coverage rather than using the geometric phase (Fig. 15).
- DMs that use linear birefringent resonators to encode phase information can be formed.
- the demonstration of full 0- to 2ji-phase coverage allows the implementation of various DM components with high efficiency at visible wavelengths such as axicons, lenses, gratings, phase shifters, and polarization beam splitters.
- This example has detailed an experimental realization of highly efficient DMs that span the visible spectrum.
- ALD is used to produce smooth amorphous T1O2 films that are transparent for wavelengths longer than about 360 nm and have an index of refraction that is sufficiently high to provide substantially complete phase control over an optical wavefront.
- the fabrication technique for these metasurfaces including a single-step lithography, provides a streamlined process to produce highly anisotropic nanostructures that are desired for DMs.
- T1O2 is used, the process is applicable to other materials that can be deposited via ALD.
- the fabricated metasurface holograms have high efficiencies (about 82, about 81, and about 78%) at their respective design wavelengths.
- the technique presented here is general and can be applied to other metasurfaces. Consideration of the optical properties of the base material and the precision of the fabrication technique allow extension of DMs to visible wavelengths. This process can allow fabrication of compact optical systems with thicknesses that are orders of magnitude less than traditional optical systems.
- Device Fabrication Devices used above were fabricated on an f-silica substrate. Substrates were first coated with hexamethyldisilazane to promote resist adhesion followed by spin coating of undiluted positive-tone EBR (ZEP-520A; Zeon Chemicals). For the devices shown, the resist is spun at about 1,750 rpm to achieve a desired resist thickness of about 600 nm. The resist was then baked at about 180 °C for about 5 min. Subsequently, samples were coated with about 10 nm of chromium via electron beam evaporation to avoid charging effects during the writing process.
- EBR undiluted positive-tone EBR
- the patterns were exposed using an accelerating voltage of about 125 kV (ELS-F125; Elionix Inc.) and developed in o-xylene for about 60 s under gentle agitation.
- ELS-F125 accelerating voltage
- ALD Abbreviations: a two-pulse system of water and the TDMAT precursor was used with an about 0.2-s water pulse followed by an about 7-s delay and an about 0.4-s TDMAT pulse followed by an about 10-s delay.
- the system was left under substantially continuous flow of about 20 cmVmin of N 2 carrier gas and was maintained at about 90 °C throughout the process. This led to an overall deposition rate of about 0.7 nm per cycle.
- Reactive ion etching was carried out on Unaxis inductively coupled plasma (ICP) reactive ion etching tool with a mixture of CI2 and BCI3 gas (about 3 and about 8 cmVmin, respectively) at a pressure of about 4 mTorr, substrate bias of about 150 V, and ICP power of about 400 W. Etch rates were typically between about 1.3 nm/s and about 1.6 nm/s. After processing was complete, the samples were exposed to UV irradiation and ozone, followed by soaking in Remover PG (MicroChem Corporation) for about 24 h.
- ICP Unaxis inductively coupled plasma
- the size of each metahologram is about 300 ⁇ about 300 ⁇ 2 , composed of about 600-nm-tall T1O2 nanofins.
- Simulations were performed using 3D finite- difference time-domain method (FDTD; Lumerical Inc.).
- FDTD 3D finite- difference time-domain method
- the nanofin' s height, width, and length were optimized to provide a ⁇ -phase shift between its major and minor axis, which is desired to achieve maximum conversion efficiency based on the geometrical phase (see Figs. 12 and 13).
- Device Measurement Devices were characterized using the setup shown in Fig. 14 composed of a fiber-coupled laser source (supercontinuum laser; NKT Photonics), linear polarizers, quarter waveplates, a lens, and a camera/detector. Measurements were carried out using circularly polarized light for PB phase. A linear polarizer and quarter waveplate at the input generated the circularly polarized light, and the set of quarter waveplate and linear polarizer at the output filtered out unconverted light - light whose helicity is substantially the same as the input light.
- Blanket T1O 2 films are deposited via ALD onto silicon substrates to prepare samples for spectroscopic ellipsometry (SE) measurements.
- SE spectroscopic ellipsometry
- a standard model is used for the substrate, and the TL model for amorphous materials is used for the Ti0 2 film.
- the TL model used to extract the optical constants of the ALD T1O 2 is a combination of the normal quantum mechanical Lorentz oscillator and the Tauc model derived for the imaginary part of the dielectric constant for amorphous materials above the bandgap.
- the Tauc model assumes a set of N noninteracting oscillators per unit volume and arrives at the following expression for the imaginary dielectric constant: where A T is the amplitude of the oscillator and E g is the transition energy.
- FIG. 8 shows the raw ellipsometry data ⁇ and ⁇ , and the corresponding generated data based on the model discussed above.
- the measured surface roughness of the T1O2 films is on the order of the surface roughness of the underlying substrate.
- Fig. 9 shows an AFM scan of the fused silica substrates used in this example. From the image, an RMS roughness of about 0.600 nm is extracted. This value is comparable to the measured surface roughness of a fused silica substrate with a film deposited on top (about 0.738 pm).
- X-ray diffraction D8 Discover; Bruker
- Fig. 10 X-ray diffraction
- This diffraction spectrum is measured for a T1O2 film on a 1 -inch-diameter fused silica substrate, with the substrate aligned to the center of the X- ray beam via a laser alignment mark.
- the absence of diffraction peaks indicates that the deposited T1O2 films are amorphous.
- the film was poly crystalline, the different polymorphs would generate diffraction peaks at about 27.35° for rutile or about 25° for anatase, for example.
- PB phase optical components are used to implement the holograms.
- the individual components are T1O2 nanofins that act as discrete uniaxial crystals - they possess a structural birefringence that leads to a fast and slow optical axis, which introduces a phase difference between orthogonal components of an incident electrical field. It is then a spatially varying rotation of the fast axis of each nanofin that gives rise to the geometric phase accumulation.
- a waveplate with spatially varying fast axis, in the basis of left and right circularly polarized light (LCP and RCP, respectively) can be represented by the matrix:
- R and L represent the left and right circularly polarized basis vectors and (E, ⁇ R, L) is the projection of the input polarization onto the RCP and LCP basis, respectively.
- RCP or LCP the retardation, ⁇ , is ⁇ .
- the efficiency of the system goes to unity, and the output state for an input of RCP light becomes which shows that the output polarization is the inverse of the input polarization and the output of the beam has acquired a phase of -2 ⁇ ( ⁇ , ⁇ ).
- the angle ⁇ ( ⁇ , ⁇ ) can vary from 0 to ⁇ , but the additional geometric of 2 means that, by locally rotating the T1O2 nanofins, a full 2ji-phase coverage can be attained.
- each individual nanofin should introduce a Ji-phase shift to have a maximum conversion efficiency (ratio of power in the output circular polarization and the power in the input circular polarization with opposite handedness), the total efficiency of the devices also can depend on the transmission of each of the nanofins.
- Fig. 13 shows the simulated transmission spectra of the T1O2 nanofins used for design wavelengths of about
- Collection of the holographic images shown in Fig. 7 is performed using the schematic shown in Fig. 14.
- a supercontinuum laser provides access to wavelengths from about 470 nm to about 800 nm and sent through a collimator, linear polarizer, and quarter waveplate to inject circularly polarized light, as specified by the PB phase.
- the circularly polarized light is then incident on the about 300 ⁇ about 300 ⁇ 2 metahologram contained on the sample and is converted to a holographic image with the opposite handedness of the input light.
- the light that passes through the sample is then sent through a 100* objective with a numerical aperture of about 0.9.
- a filter in cross-polarization with respect to the input light is placed after the objective.
- the intensity is then measured using a power meter.
- light is passed through a Bertrand lens to magnify the hologram.
- the terms “approximately,” “substantially,” “substantial” and “about” are used to describe and account for small variations. When used in conjunction with an event or circumstance, the terms can refer to instances in which the event or circumstance occurs precisely as well as instances in which the event or circumstance occurs to a close approximation.
- the terms when used in conjunction with a numerical value, can encompass a range of variation of less than or equal to ⁇ 10% of that numerical value, such as less than or equal to ⁇ 5%, less than or equal to ⁇ 4%, less than or equal to ⁇ 3%, less than or equal to ⁇ 2%, less than or equal to ⁇ 1%, less than or equal to ⁇ 0.5%, less than or equal to ⁇ 0.1 %, or less than or equal to ⁇ 0.05%.
- two numerical values can be deemed to be "substantially" the same or equal if a difference between the values is less than or equal to ⁇ 10% of an average of the values, such as less than or equal to ⁇ 5%, less than or equal to ⁇ 4%, less than or equal to ⁇ 3%, less than or equal to ⁇ 2%, less than or equal to ⁇ 1 %, less than or equal to ⁇ 0.5%, less than or equal to ⁇ 0.1 %, or less than or equal to ⁇ 0.05%.
- substantially orthogonal or perpendicular can encompass a range of variation of less than or equal to ⁇ 10° relative to 90°, such as less than or equal to ⁇ 5°, less than or equal to ⁇ 4°, less than or equal to ⁇ 3°, less than or equal to ⁇ 2°, less than or equal to ⁇ 1 °, less than or equal to ⁇ 0.5°, less than or equal to ⁇ 0.1 °, or less than or equal to ⁇ 0.05°.
- substantially parallel can encompass a range of variation of less than or equal to ⁇ 10° relative to 0°, such as less than or equal to ⁇ 5°, less than or equal to ⁇ 4°, less than or equal to ⁇ 3°, less than or equal to ⁇ 2°, less than or equal to ⁇ 1°, less than or equal to ⁇ 0.5°, less than or equal to ⁇ 0.1 °, or less than or equal to ⁇ 0.05°.
- the term "nanometer range” or “nm range” refers to a range of dimensions from about 1 nm to about 1 ⁇ .
- the nm range includes the “lower nm range,” which refers to a range of dimensions from about 1 nm to about 10 nm, the “middle nm range,” which refers to a range of dimensions from about 10 nm to about 100 nm, and the “upper nm range,” which refers to a range of dimensions from about 100 nm to about 1 ⁇ .
- nanostructure refers to an object that has at least one dimension in the nm range.
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US11927769B2 (en) | 2022-03-31 | 2024-03-12 | Metalenz, Inc. | Polarization sorting metasurface microlens array device |
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Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11231544B2 (en) | 2015-11-06 | 2022-01-25 | Magic Leap, Inc. | Metasurfaces for redirecting light and methods for fabricating |
CA3022876A1 (en) | 2016-05-06 | 2017-11-09 | Magic Leap, Inc. | Metasurfaces with asymmetric gratings for redirecting light and methods for fabricating |
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IL268115B2 (en) | 2017-01-27 | 2024-01-01 | Magic Leap Inc | Antireflection coatings for metasurfaces |
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JP7176439B2 (en) * | 2019-02-25 | 2022-11-22 | 住友電気工業株式会社 | optical module |
US11473191B2 (en) * | 2019-02-27 | 2022-10-18 | Applied Materials, Inc. | Method for creating a dielectric filled nanostructured silica substrate for flat optical devices |
WO2020200931A1 (en) * | 2019-03-29 | 2020-10-08 | Sony Corporation | Metalens portion, electronic device and method |
EP3908880B1 (en) * | 2019-03-31 | 2024-05-22 | Spectralics Ltd. | Dynamic neutral density filter |
JP7322175B2 (en) * | 2019-04-11 | 2023-08-07 | アプライド マテリアルズ インコーポレイテッド | Multi-depth film for optical devices |
JP2021071685A (en) * | 2019-11-01 | 2021-05-06 | 凸版印刷株式会社 | Reflective mask and production method for reflective mask |
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CN110911507B (en) * | 2019-11-19 | 2021-08-20 | 华中科技大学 | Perpendicular incidence type silicon-based germanium photoelectric detector based on medium super surface |
CN111290063A (en) * | 2019-12-23 | 2020-06-16 | 南开大学 | Complex amplitude modulated medium-metal double-layer super surface |
US11885979B2 (en) * | 2020-01-03 | 2024-01-30 | University Of Maryland, College Park | Low-loss metasurface optics for deep UV |
JP7474103B2 (en) * | 2020-04-13 | 2024-04-24 | 浜松ホトニクス株式会社 | Optical element manufacturing method and optical element |
JP7469946B2 (en) * | 2020-04-13 | 2024-04-17 | 浜松ホトニクス株式会社 | Optical element manufacturing method and optical element |
CN111639415B (en) * | 2020-04-30 | 2020-12-11 | 哈尔滨工业大学 | Solar spectrum absorption film layer design method |
US11520228B2 (en) | 2020-09-03 | 2022-12-06 | International Business Machines Corporation | Mass fabrication-compatible processing of semiconductor metasurfaces |
US11681077B2 (en) * | 2020-10-30 | 2023-06-20 | Avalon Holographics Inc. | Optical metasurface with sub-hogels |
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US11204153B1 (en) | 2021-02-22 | 2021-12-21 | Lumileds Llc | Light-emitting device assembly with emitter array, micro- or nano-structured lens, and angular filter |
US11508888B2 (en) | 2021-02-22 | 2022-11-22 | Lumileds Llc | Light-emitting device assembly with emitter array, micro- or nano-structured lens, and angular filter |
CN113075802A (en) * | 2021-02-23 | 2021-07-06 | 华南师范大学 | Based on phase change material Sb2S3Near infrared thermal modulation zooming super-structure lens |
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US20230003920A1 (en) * | 2021-07-01 | 2023-01-05 | Samsung Electronics Co., Ltd. | Normal-to-plane surface plasmon mode for angle-and-polarization independent optomechanical sensing |
KR20230042979A (en) * | 2021-09-23 | 2023-03-30 | 삼성전자주식회사 | Metaoptics and method of manufacturing metasurface |
Family Cites Families (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3877034A (en) | 1973-12-06 | 1975-04-08 | Trw Inc | Artificial dielectric structure and its method of fabrication |
US5245466A (en) | 1990-08-15 | 1993-09-14 | President And Fellows Of Harvard University And Rowland Institute | Optical matter |
JPH07182709A (en) * | 1993-11-15 | 1995-07-21 | Minnesota Mining & Mfg Co <3M> | Magneto-optical recording medium |
US20030077983A1 (en) * | 2001-10-12 | 2003-04-24 | International Business Machines Corporation | Cleaning polish etch composition and process for a superfinished surface of a substrate |
JP4280567B2 (en) * | 2003-06-23 | 2009-06-17 | リコー光学株式会社 | Polarizing optical element and manufacturing method thereof |
JP2004302457A (en) | 2003-03-20 | 2004-10-28 | Fujitsu Ltd | Optical function element, wavelength variable optical filter, and wavelength variable light source |
US7034978B2 (en) | 2003-03-20 | 2006-04-25 | Fujitsu Limited | Optical function device using photonic crystal, variable wavelength optical filter and variable wavelength light source |
EP1721194A4 (en) * | 2003-12-05 | 2010-01-13 | Univ Pittsburgh | Metallic nano-optic lenses and beam shaping devices |
US20050211665A1 (en) * | 2004-03-26 | 2005-09-29 | Sharp Laboratories Of America, Inc. | Methods of forming a microlens array |
US7619816B2 (en) * | 2004-12-15 | 2009-11-17 | Api Nanofabrication And Research Corp. | Structures for polarization and beam control |
US20070030870A1 (en) | 2005-07-27 | 2007-02-08 | Bour David P | Method and structure for ridge waveguide quantum cascade laser with p-type overgrowth |
US7756365B2 (en) | 2006-07-07 | 2010-07-13 | University Of Illinois | Near ultraviolet-wavelength photonic-crystal biosensor with enhanced surface to bulk sensitivity ratio |
JP4999401B2 (en) | 2006-08-18 | 2012-08-15 | リコー光学株式会社 | Manufacturing method of optical element having fine irregularities on surface |
JP4999556B2 (en) | 2007-05-31 | 2012-08-15 | リコー光学株式会社 | Manufacturing method of optical element having fine irregularities on surface |
WO2009061861A2 (en) | 2007-11-05 | 2009-05-14 | Lightsmyth Technologies Inc. | Highly efficient optical gratings with reduced thickness requirements and impedance-matching layers |
US20100033701A1 (en) | 2008-08-08 | 2010-02-11 | Hyesog Lee | Superlens and lithography systems and methods using same |
JP5336283B2 (en) * | 2008-09-03 | 2013-11-06 | 信越化学工業株式会社 | Pattern formation method |
US8506827B2 (en) * | 2008-09-22 | 2013-08-13 | Polarization Solutions, Llc | Short pitch metal gratings and methods for making the same |
US9316916B2 (en) | 2009-04-07 | 2016-04-19 | Globalfounries Inc. | Method to mitigate resist pattern critical dimension variation in a double-exposure process |
US8822137B2 (en) * | 2011-08-03 | 2014-09-02 | International Business Machines Corporation | Self-aligned fine pitch permanent on-chip interconnect structures and method of fabrication |
JP5723243B2 (en) | 2011-08-11 | 2015-05-27 | 東京エレクトロン株式会社 | Film forming method, semiconductor device manufacturing method including the same, film forming apparatus, and semiconductor device |
JP2015502581A (en) | 2011-12-22 | 2015-01-22 | エルジー・ケム・リミテッド | Method for manufacturing polarization separating element |
JP6105490B2 (en) * | 2012-01-27 | 2017-03-29 | 旭化成株式会社 | Thermally reactive resist material for dry etching and mold manufacturing method |
WO2013184556A1 (en) * | 2012-06-05 | 2013-12-12 | President And Fellows Of Harvard College | Ultra-thin optical coatings and devices and methods of using ultra-thin optical coatings |
US9171960B2 (en) * | 2013-01-25 | 2015-10-27 | Qualcomm Mems Technologies, Inc. | Metal oxide layer composition control by atomic layer deposition for thin film transistor |
US20150011073A1 (en) * | 2013-07-02 | 2015-01-08 | Wei-Sheng Lei | Laser scribing and plasma etch for high die break strength and smooth sidewall |
US9523152B2 (en) | 2013-09-06 | 2016-12-20 | Massachusetts Institute Of Technology | Metallic dielectric photonic crystals and methods of fabrication |
US9529150B2 (en) | 2013-10-22 | 2016-12-27 | Massachusetts Institute Of Technology | Waveguide formation using CMOS fabrication techniques |
US9919921B2 (en) * | 2014-01-24 | 2018-03-20 | The Regents Of The University Of Colorado, A Body Corporate | Methods of preparing nanodevices |
CN104374745B (en) | 2014-11-17 | 2017-07-14 | 中国人民解放军国防科学技术大学 | A kind of sensor based on medium nanostructured Fano resonance characteristics |
SG11201704226PA (en) | 2014-11-26 | 2017-06-29 | Supriya Jaiswal | Materials, components, and methods for use with extreme ultraviolet radiation in lithography and other applications |
US10816815B2 (en) | 2014-12-10 | 2020-10-27 | President And Fellows Of Harvard College | Achromatic metasurface optical components by dispersive phase compensation |
WO2017176921A1 (en) * | 2016-04-05 | 2017-10-12 | President And Fellows Of Harvard College | Meta-lenses for sub-wavelength resolution imaging |
SG11202001717VA (en) * | 2017-08-31 | 2020-03-30 | Metalenz Inc | Transmissive metasurface lens integration |
JP7474103B2 (en) * | 2020-04-13 | 2024-04-24 | 浜松ホトニクス株式会社 | Optical element manufacturing method and optical element |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US11906698B2 (en) | 2017-05-24 | 2024-02-20 | The Trustees Of Columbia University In The City Of New York | Broadband achromatic flat optical components by dispersion-engineered dielectric metasurfaces |
US11579456B2 (en) | 2017-08-31 | 2023-02-14 | Metalenz, Inc. | Transmissive metasurface lens integration |
US11988844B2 (en) | 2017-08-31 | 2024-05-21 | Metalenz, Inc. | Transmissive metasurface lens integration |
US11978752B2 (en) | 2019-07-26 | 2024-05-07 | Metalenz, Inc. | Aperture-metasurface and hybrid refractive-metasurface imaging systems |
US11927769B2 (en) | 2022-03-31 | 2024-03-12 | Metalenz, Inc. | Polarization sorting metasurface microlens array device |
Also Published As
Publication number | Publication date |
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US20220283411A1 (en) | 2022-09-08 |
US11815668B2 (en) | 2023-11-14 |
KR102643957B1 (en) | 2024-03-07 |
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US11366296B2 (en) | 2022-06-21 |
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US20180341090A1 (en) | 2018-11-29 |
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