EP3340929A1 - Dispositif d'implant et son procédé de fabrication - Google Patents
Dispositif d'implant et son procédé de fabricationInfo
- Publication number
- EP3340929A1 EP3340929A1 EP16842692.2A EP16842692A EP3340929A1 EP 3340929 A1 EP3340929 A1 EP 3340929A1 EP 16842692 A EP16842692 A EP 16842692A EP 3340929 A1 EP3340929 A1 EP 3340929A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- parylene
- package
- biocompatible
- chip
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
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- 239000000560 biocompatible material Substances 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 claims description 3
- 238000005476 soldering Methods 0.000 claims description 2
- 229920000052 poly(p-xylylene) Polymers 0.000 abstract description 88
- 239000000758 substrate Substances 0.000 abstract description 81
- 238000000034 method Methods 0.000 abstract description 66
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- 238000012360 testing method Methods 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 13
- 239000010931 gold Substances 0.000 description 11
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- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 9
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
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- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
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- 229910052759 nickel Inorganic materials 0.000 description 2
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 2
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
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- 239000004065 semiconductor Substances 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- 238000009987 spinning Methods 0.000 description 2
- 241000124008 Mammalia Species 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
- A61N1/00—Electrotherapy; Circuits therefor
- A61N1/02—Details
- A61N1/04—Electrodes
- A61N1/05—Electrodes for implantation or insertion into the body, e.g. heart electrode
- A61N1/0526—Head electrodes
- A61N1/0543—Retinal electrodes
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- A—HUMAN NECESSITIES
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- A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
- A61N1/00—Electrotherapy; Circuits therefor
- A61N1/18—Applying electric currents by contact electrodes
- A61N1/32—Applying electric currents by contact electrodes alternating or intermittent currents
- A61N1/36—Applying electric currents by contact electrodes alternating or intermittent currents for stimulation
- A61N1/372—Arrangements in connection with the implantation of stimulators
- A61N1/375—Constructional arrangements, e.g. casings
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- A61N1/36—Applying electric currents by contact electrodes alternating or intermittent currents for stimulation
- A61N1/372—Arrangements in connection with the implantation of stimulators
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- A61N1/3758—Packaging of the components within the casing
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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- H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
- H01L24/92—Specific sequence of method steps
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- A61F—FILTERS IMPLANTABLE INTO BLOOD VESSELS; PROSTHESES; DEVICES PROVIDING PATENCY TO, OR PREVENTING COLLAPSING OF, TUBULAR STRUCTURES OF THE BODY, e.g. STENTS; ORTHOPAEDIC, NURSING OR CONTRACEPTIVE DEVICES; FOMENTATION; TREATMENT OR PROTECTION OF EYES OR EARS; BANDAGES, DRESSINGS OR ABSORBENT PADS; FIRST-AID KITS
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- A61N1/32—Applying electric currents by contact electrodes alternating or intermittent currents
- A61N1/36—Applying electric currents by contact electrodes alternating or intermittent currents for stimulation
- A61N1/36046—Applying electric currents by contact electrodes alternating or intermittent currents for stimulation of the eye
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/189—Printed circuits structurally associated with non-printed electric components characterised by the use of a flexible or folded printed circuit
Definitions
- This invention relates to biomedical implants in general and in particular to biomedical implants that employ a parylene substrate that allows the total connection and fabrication of a biomedical implant comprising semiconductor chips or other pre- manufactured electrical components such as transistors, resistors, capacitors or inductors.
- aligned electrical connection can be done between parylene-C interfaces and high density multi-channel chips by a conductive epoxy squeegee technique (see, Jay H.C. Chang, Ray Huang, and Y.C. Tai, Proc. TRANSDUCERS 2011, pp. 378-381), where a PDMS mold was used to house the IC chips and serve as the safety squeegee buffer zone.
- Parylene-C has become a popular material for BioMEMS implant applications due to its superior properties (see, J. H. Chang et al, Proc. TRANSDUCERS 2011, pp. 390-393; J. H. Chang et al, Proc. NEMS 2011, pp. 1067-1070). It has also served as an intermediate layer for silicon wafer bonding (see, H. Noh et al, J. Micromech. Microeng. 14(2004), 625; H. Kim et al., J. Microelectromech. Syst. 14(2005), 1347-1355). However, the bonding between parylene-C and silicon is still problematic.
- IC integrated circuit
- Some packaging techniques contemplate the creation of electronic modules that incorporate multiple electronic devices (e.g. integrated circuits, passive components such as inductors, capacitor, or resisters) into a single package.
- electronic devices e.g. integrated circuits, passive components such as inductors, capacitor, or resisters
- MEMS micro-electrical-mechanical system
- the present invention provides substrates, methods and processes to assemble IC chips to thin-film substrates such as a parylene substrates for medical implants such as retinal implants.
- inventive packaging technology can be used to produce 10,000 or more connections within an area as small as 36 mm 2 , a chip size reasonable for retinal implants.
- the current invention provides methods for improving packaging techniques.
- the present invention provides a method for fabricating a thin-film substrate such as a parylene substrate for attachment of a device, comprising: depositing a first thin-film layer such as a parylene layer on a silicon-wafer to form a bottom thin-film layer;
- a second thin-film layer such as parylene layer adjacent to the metal to form a top thin-film layer and a thin-film metal thin-film sandwich (e.g., parylene-metal- parylene sandwich);
- the thin-film substrate e.g., parylene substrate
- the present invention provides the thin-film substrate (e.g., parylene substrate) made by the inventive process.
- the substrate is useful to integrate, connect and package IC chips for high-lead-count implant devices.
- connection yield In order to validate this technology, chips designed with 268 connections to mimic real IC chips under development were used for the measurement of connection yield. In addition, after squeegee connection and encapsulation by a thick parylene-C coating, the connected chips underwent accelerated soaking tests in a high temperature saline solution. The results show that the technique provides exceptionally high connection yield.
- the present invention provides a method for assembling an integrated circuit to a thin-film substrate (e.g., parylene substrate), comprising: spin coating a photo-patternable adhesive or epoxy to an integrated circuit (IC) to form a covered IC; masking the covered IC; and
- a thin-film substrate e.g., parylene substrate
- the covered IC using photolithography to expose a plurality of bonding pads on the IC chip to form a patterned IC to integrate into the thin-film substrate (e.g., parylene substrate).
- the thin-film substrate e.g., parylene substrate.
- the present invention provides a biocompatible thin- film (e.g., parylene) substrate for attachment of a device, comprising: a first thin-film (e.g., parylene) layer; a metal adjacent to the first thin-film layer; a second thin-film (e.g., parylene) layer adjacent to the metal to form a thin-film metal thin-film sandwich (e.g., paiylene-metal-parylene sandwich), wherein the second layer of thin-film has an opening, the opening having at least one electrical contact provided on an internal surface thereof, the opening configured to accept at least one electrical circuit device and to provide electrical communication between the at least one electrical contact and the at least one electrical circuit device, the biocompatible thin-film (e.g., parylene) substrate configured to be implanted within a living organism after accepting the at least one electrical circuit device.
- a biocompatible thin-film e.g., parylene
- the device having at least one electrical circuit is an integrated circuit (IC) chip.
- the device such as an IC chip is integrated into the substrate by a conductive epoxy squeegee electrical connection.
- the device is integrated into the substrate by a photo-patternable adhesive or photoresist used as a mechanical glue.
- the present invention provides: a biocompatible package for low density connections, comprising:
- ASIC application specific integrated circuit
- PCB printed circuit board
- metal walls adjacent the feedthrough layer and a metal lid to encase and make the biocompatible package.
- FIGS. 1A-1K show a fabrication process of a flexible parylene-C connection substrate and chip integration according to one embodiment of the present invention.
- FIGS. 2A-2E show in FIG. 2A a schematic representation of the fabricated flexible parylene-C substrate connected with a chip and discrete component.
- FIG. 2B shows the backside of the discrete component area.
- FIG. 2C shows a close-up view of the chip integration;
- FIG. 2D shows a retinal tack;
- FIG. 2E shows a schematic of an eye and integration of a fabricated flexible parylene-C substrate connected with a chip.
- FIGS. 3A-3B show a custom holder for chip assembly technique.
- FIGS. 4A-4C show in FIG. 4A a dummy chip for assembly yield test; FIGS. 4B-4C show pads also served as alignment marks.
- FIGS. 5A-5D show in FIG. 5 A unbaked AZ4620;
- FIG.5B shows AZ4620 baked at 140°C for 30 minutes in a vacuum oven;
- FIG. 5C and FIG. 5D show the slope formed by reflow is beneficial for conductive epoxy to be fed through.
- FIGS. 6A-6B show the gluing area was about 2% as is shown in FIG. 6A; FIG. 6B shows the gluing area increased to about 94% (2%+92%) by the extra photoresist used as glue.
- FIG. 7 shows a schematic representation of a clamp as the bonding tool on the testing samples.
- FIGS. 8A-8B show in FIG. 8 A a cross-sectional SEM image of the bonding (2MPa, 130°C); FIG. 8B shows the adhesive interface after parylene peeling.
- FIGS. 9A-9C show in FIG. 9A the setup of the force gauge to measure the peeling force.
- FIG. 9B shows a real testing sample after bonding;
- FIG. 9C shows the schematic representation of the testing sample.
- FIG. 10 shows the peeling force vs bonding temperature for various photo-patternedable adhesives.
- FIG. 11 shows the peeling force vs bonding pressure for various photo-patternable adhesives.
- FIGS. 12A-12B shows in FIG. 12A the maximum peeling forces of different photo- patternable adhesives; FIG. 12B shows the peeling force vs bonding time for different photo- patternable adhesives.
- FIGS. 13A-13C show in FIG. 13 A a surgical parylene-C device connected with silicon chip and discrete components; FIG. 13B and FIG. 13C show metal pads are exposed with other area covered by adhesives.
- FIG. 14 shows the setup of the measurement, wherein the electrode array outputs (the electrode end that is placed on macula) were probed to check the connection.
- FIG. 15 shows the connection yields under 4 different conditions; reliability tests were carried out after squeegee connection, encapsulation by parylene-C coating, and accelerated soaking in 90°C saline.
- FIGS. 16A-16D show in FIG. 16A dummy chips with 40 ⁇ by 40 ⁇ pad size and 40 ⁇ separation;
- FIG. 16B shows the connection between a parylene substrate and dummy chip;
- FIG. 16C shows the yield vs separation of pads;
- FIG. 16D shows the yield vs side length of pads.
- FIG. 17 shows one embodiment of a low density packaging technology.
- the present invention relates to biomedical implants in general and in particular to biomedical implants that employ a thin-film (e.g., parylene) substrate that allows the total connection and fabrication of a biomedical implant comprising semiconductor chips and/or other pre-manufactured electrical components.
- a thin-film substrate such as a parylene substrate for attachment of a device, comprising: depositing a first thin-film layer such as a first parylene layer on a silicon- wafer to form a bottom thin-film layer;
- a metal to the bottom thin-film (e.g., parylene) layer to form an electrical connection
- a second thin-film layer such as second parylene layer adjacent to the metal to form a top thin-film layer and a thin-film metal thin-film sandwich (e.g., paiylene-metal-parylene sandwich)
- the first thin-film layer can be the same or different than the second thin-film layer.
- parylene is the preferred substrate, a skilled artisan will appreciate that the material can be other thin-film polymers such as polyimide, Teflon, kapton, or a printed circuit board (PCB) and the like. The remainder of the application will use parylene as an illustrated example. Other thin-films can also be used.
- the present invention provides a fabrication process 100 for a parylene-substrate, such as a flexible parylene-C substrate.
- a parylene-substrate such as a flexible parylene-C substrate.
- FIG. 1 A shows a 5 ⁇ first parylene-C layer (bottom layer) 120 deposited on a silicon substrate 110 such as a HMDS treated silicon wafer, which aids in the device being detached such as being released in distilled or deionized water, preferably deionized water.
- a metal 130 such as a titanium/gold (Ti/Au) alloy for a metal lift-off.
- the metal provides an electrical connection.
- a second parylene layer 150 top layer
- a thicker parylene-C (about 40 ⁇ ) layer is then deposited to complete the parylene-metal- parylene sandwich structure as is shown in FIG. 1C.
- the process includes providing a mask 160 such as a metal mask (e.g., aluminum) deposited as a parylene-C etching mask to etch through the thick parylene-C layer as is shown in FIG. ID.
- electrode sites 170, 175 and device contour 180 are defined by reactive ion etching (such as a 2-step 0 2 plasma etching as is shown in FIG. IE) or deep reactive ion etching (DRTE) can be used.
- FIG. IF shows the flex being released from the wafer 110.
- parylene-C the processes and embodiments of the device herein are not so limited. Other parylenes such as parylene N, C, D, HT, AM, A or combinations thereof can also be used. Parylene-C is the preferred parylene. Although parylene is the preferred substrate, a skilled artisan will appreciate that the material can be other thin-film polymers such as polyimide, Teflon, Kapton, or a printed circuit board (PCB) and the like. [0037] Other materials useful for substrate and/or carrier design include, but are not limited to, silicon, glass, steel, G10-FR4, or any other FR4 family epoxy, etc. In some embodiments, the silicon substrate is used only as a carrier during fabrication and is accordingly removed before the package is complete. In other embodiments, the carrier remains an integral part of the package.
- the silicon-wafer used in the methods is treated with 1,1, 1,3,3,3- hexamethyldisilazane (HMDS).
- HMDS 1,1, 1,3,3,3- hexamethyldisilazane
- the first parylene layer 120 and the second parylene layer 150 are deposited on the silicon substrate by chemical vapor deposition (CVD).
- the first layer has a thickness of between about 0.1 ⁇ to about 100 ⁇ thick such as 10, 20, 30, 40, 50, 60, 70, 80, 90, or 100 ⁇ .
- the thickness of the first parylene layer (bottom layer) is between about 1 ⁇ and about 10 ⁇ thick such as about 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10 ⁇ thick.
- the second parylene layer (top layer) 150 is thicker than the first parylene layer 120.
- the second parylene layer is between 10 ⁇ and 200 ⁇ thick such as 10, 20, 30, 40, 50, 60, 70, 80, 90, 100, 110, 120, 130, 140, 150, 160, 170, 180, 190 or 200 or even thicker.
- the second parylene layer is between 20 ⁇ and 60 ⁇ thick such as about 20, 21, 22, 23, 24, 25, 26, 27, 28, 29 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59 or 60 ⁇ thick.
- the metal 130 used for the lift-off is a titanium/gold (Ti/Au) alloy.
- Ti/Au titanium/gold
- other suitable metals and alloys include, but are not limited to, Cr/Au, Ni/Au, Ti/Au, Al/Ti, Ag/Ti, Cr/Au/Ti/Ni/Au, Ni/Pd/Au, Ti/Ni/Au or combinations thereof.
- a mask such as a metal mask deposited as a parylene-C etching mask to etch through the second parylene-C layer.
- etching is a reactive ion etching (RIE) masked by a metal mask.
- RIE reactive ion etching
- DRIE deep reactive etching
- Other suitable mask materials are also useful.
- the RIE can be oxygen plasma etching.
- the process described is used to generate multiple parylene- metal-parylene sandwich layers on a carrier (e.g., a silicon wafer) such as a plurality of sandwich layers including 2, 3, 4, 5, 6, 7, 8, 9, 10 or more paiylene-metal-parylene sandwich layers.
- a carrier e.g., a silicon wafer
- the process just described generates 1 sandwich layer, a skilled artisan will appreciate that the process can be repeated to make any number of sandwich layers.
- the invention includes a parylene substrate made by the processes herein. As is described in more detail below, the invention provides attaching a device to the parylene substrate such device includes, for example, an integrated circuit and other discrete components.
- FIG. 1G shows the flex previously released from the wafer being aligned with the ASIC 185 with a photo-patternable adhesive 182 placed in a mold 187.
- the flex is bonded with ASIC 185 with PPA 182 and ready for conductive epoxy 189 using a squeegee 188 process.
- FIG. II after a conductive epoxy squeegee process, some conductive epoxy residue 189 is left on the top surface, which may cause a shortage.
- FIG. 1 J the top is cleaned to provide a cleaned top surface to avoid shortage.
- the conductive epoxy 183 is kept inside cavities to make a connection between the flex and ASIC.
- FIG. IK shows the release of the assembly device from the mold.
- the inventive thin-film (e.g., parylene) substrate hosts electronic components such as application specific integrated circuits (ASICs), which are
- the fabricated flexible parylene-C substrate is connected with an IC chip and other discrete components.
- the substrate or micro-module of the present invention contains a variety of components including, but not limited to, one or more integrated circuits, ASICs, interconnect layers, heat sinks, conductive vias, passive devices, MEMS devices, sensors, pre-manufactured electrical components, transistors, resistors, capacitors, inductors, micropumps and filters.
- the components are arranged and stacked within the module in a wide variety of different ways.
- the layers and components of the module can be deposited and processed using various conventional wafer level processing techniques, such as spin coating, lithography and/or electroplating.
- the parylene package can include many other types of devices and components than the ones illustrated.
- the package can also contain almost any number of active and/or passive devices. Examples of such active and/or passive devices includes resistors, capacitors, oscillators, magnetic cores, MEMS devices, sensors, cells, communication devices, integrated thin film battery structures, inductors, and the like. These devices can be positioned and/or stacked in various locations within the package.
- the components may take the form of prefabricated discrete components or may be formed in-situ.
- One advantage of the lithography -based process used to create the present package is that these and other components can be formed in-situ during the layered formation of the package.
- FIG. 2A a schematic representation 200 is shown of the fabricated flexible parylene-C substrate 210 connected with an integrated chip 220 and discrete components e.g., capacitor 211 and oscillator 217.
- the multi-electrode array 230 with outputs 232 is placed on the macula of a human eye or an eye of another mammal and can be fixed by a retinal tack 235 (FIG. 2D).
- integrated discrete components are placed on or in an eyeball.
- FIG. 2B is the backside of the discrete component area.
- FIG 2C shows a close-up view of the chip integration.
- FIG. 2E is a schematic of an eye showing positioning of an electrode array 241, integrated ASICs 245 and an intraocular RF coil 250.
- the discrete components such as for example a capacitor 211 and an oscillator 217 are mounted and connected by conductive epoxy to make an electrical connection.
- two incisions or suture holes are made for the device to be fixed in an eyeball 261, 265 (see, FIG. 2E).
- a multi-electrode array 230 is placed on the macula and fixed by a retinal tack 235.
- FIG. 2E also shows the electrode array 241, inside one incision 261 and the integration of the application specific integrated circuit 245 in the other incision 265.
- An intraocular RF coil 250 is also shown.
- the interconnection part is preferably about 0.1 mm to about 6 mm wide such as about 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9, 1, 2, 3, 4, 5, or 6 mm wide. In certain instances, the interconnection is about 2 mm wide. In certain instances, the interconnection depends on the incision size for surgery on the eyeball. However, in most instances, the width is about 2 or 3 mm.
- IC chips having high-density and multi-channel bonding pads can be connected with a parylene substrate by a conductive epoxy squeegee technique.
- Other discrete components with larger bonding pads such as caps and oscillators, can be connected with a parylene substrate manually by conductive epoxy using needles.
- Power and data coils with larger bonding pads can also be connected with a parylene substrate manually by conductive epoxy using needles.
- the whole integrated device is then fixed inside an eyeball by a retinal tack (e.g., close to electrode array).
- the present invention provides methods for integrating the flexible parylene substrate with an IC chip and other discrete components.
- the method includes chip pattern lithography, including photoresist spinning, baking, exposing, and developing as well as integrating the IC chip into the flexible parylene substrate.
- IC chip assembly can be done in a custom holder 300.
- chips 310, 315, 320 are first secured in a holder 300, and all the chip pattern lithography, including photoresist spinning, baking, exposing, and developing is done in this holder in series.
- the chip 315 can be released from the back side of the mold, which is beneficial for the whole device to be implanted inside the eyeball.
- the chip can be integrated and packaged into the flexible parylene substrate.
- the processing of the IC chips to form a patterned IC chip is typically done on a custom chip pattern mold.
- FIG. 3 A also shows the mold can serve as a safety buffer zone for a squeegee process. The size and the depth of the mold is designed to accommodate various sizes of the chip.
- FIG. 3B shows an expanded view of an IC chip.
- a commercially available conductive epoxy is first mixed well and applied on the surface of an edge of the parylene substrate.
- the parylene substrate has pre-designed holes and/or wells that are etched during the fabrication process. The holes and/or wells serve as a screen for this process after the IC chip is aligned and bonded well with the parylene substrate.
- a rubber squeegee is then used to push the epoxy across the surface, so the epoxy fills the holes and/or wells in the parylene substrate, to electrically connect the parylene substrate and IC chip.
- dummy chips with conductive traces are fabricated to simulate the actual chip and special pads are pre-connected for connection yield measurement.
- FIG. 4A shows a dummy chip for an assembly yield test.
- FIG. 4B shows pads can also serve as alignment marks.
- FIG. 4C shows a metal pad exposed with a resolution of around 5 ⁇ being achieved.
- the present invention provides methods and processes for a low-temperature bonding between a thin-film (e.g., parylene such as parylene C) and silicon using photo- patternable adhesives.
- a thin-film e.g., parylene such as parylene C
- This method can be used to determine the bonding pads and also reduce the residual stress in packaging.
- this low-temperature bonding allows selectively local area bonding, without applying a high electric field.
- the present invention provides a method for assembling an integrated circuit to a thin-film substrate.
- parylene is the preferred substrate, a skilled artisan will appreciate that the material can be other thin-film polymers such as polyimide, Teflon, kapton, or a printed circuit board (PCB) and the like.
- the method comprises: spin coating a photo-patternable adhesive or epoxy to an integrated circuit (IC) to form a covered IC; masking the covered IC; and patterning the covered IC using photolithography to expose a plurality of bonding pads on the IC to form a patterned IC, for integration into a thin-film (e.g., parylene) substrate.
- IC integrated circuit
- PCB printed circuit board
- the invention provides low-temperature bonding processes to facilitate the connection and packaging of various components for use as biomedical implants.
- the bonding technology can be used to facilitate the connection between parylene-C substrates and an IC as well as descrete components, which substrates have pre-metalized electrical connections.
- the chips are preferrably bound on the substrates with proper alignment so the metal pads on the parylene substrates and the metal pads on the chips line up.
- the photo-patternable material is a photoresist.
- Suitable photoresist includes SU-8, AZ4620, AZ1518, AZ4400, AZ9260, THB-126N, WPR-5100, BCB, polyimide and the like.
- the processing conditions are facile with respect to bonding temperature, pressure, time, and surface treatment. The results show that for example, the epoxy-based SU-8 is very effective with a peeling force up to 6.3N.
- AZ4620 photoresist is used in the processes due to excellent reflow properties (P. J.
- FIG. 5A illustrates unbaked AZ4620.
- FIG. 5B shows AZ4620 baked at 140°C for 30 minutes in a vacuum oven.
- FIG. 5C and 5D show that the slope formed by reflow is beneficial for conductive epoxy to be fed through.
- the side lengths show no change before and after baking.
- conductive epoxy was fed through the cavity embedded in a parylene-C substrate and relied on to make both electrical and mechanical connections.
- the prior art process uses only conductive epoxy 615 to connect the parylene substrate and the chip 602.
- the metal pad is shown as 625.
- both conductive epoxy 615 and photo-patternable adhesive (e.g., photoresist) 610 such as AZ4620 is used.
- AZ4620 as glue here
- the total gluing area between parylene-C substrate and a chip 602 is increased from 2% to 94%, as shown in Figure 6B.
- the unnecessary pads were also covered to avoid shortage happening underneath the parylene-C interface during a squeegee connection process.
- the photo-patternable adhesives are first spin-coated on clean silicon wafers with for example, HMDS and oxygen plasma treatments, followed by standard photolithography process to define the bonding pads.
- the methods include baking the patterned IC to form a smooth surface.
- the parylene substrate is first treated with oxygen plasma to enhance bonding with photo- patternable adhesives.
- the IC chip is treated by HMDS and/or oxygen plasma to enhance bonding with photo-patternable adhesives.
- SU-8 13 ⁇ and 28 ⁇
- AZ4620 ⁇ and 19 ⁇
- Other photoresists include AZ1518, AZ4400, AZ9260, THB-126N, WPR-5100, BCB, polyimide and the like.
- a clean 30 ⁇ parylene-C film 730 treated by oxygen plasma is then aligned with a diced wafer 740 and the structure is sandwiched by two glass slides 715, 725.
- a clamp 750 having two arms 710, 720 is used as a bonding tool to make good contact and apply constant force on the testing samples.
- the heating process is operated in a vacuum oven and the maximum testing temperature is set to be about 120-180 °C such as about 150°C to prevent damage to the IC chips.
- FIG. 8A and 8B show one example of cross-sectional SEM images of samples bonded by photo-patternable adhesives.
- the bonding pads are well defined with desired thickness and the shape of the microstructures is not changed during the bonding process.
- the flexible intermediate adhesives does not cause residual stress after bonding.
- the methods include first treating the parylene substrate with oxygen plasma treatment to enhancing bonding.
- plasma treatment conditions include, for example, about 10W to about 100 W such as about 50 W; 100 mtorr to about 300 mtorr such as about 200 mtorr; and 0.1 minute to about 5 minutes such as about 1 minute duration.
- each of the plurality of bonding pads is between 1 ⁇ and 10 ⁇ . In certain instances, the bonding pads can each be different dimensions.
- the thickness of photo-patternable adhesives on the IC chip is from 10 ⁇ to 30 ⁇ such as 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29 or 30 ⁇ .
- the patterned IC and a parylene substrate are assembled using conductive epoxy or paste.
- the methods include delivering conductive epoxy to make a high-density multi-channel IC chip connection by a high-throughput squeegee technique.
- the high- density multi-channel IC chip is greater than 1000 channels on a 25 mm 2 chip area or even 10,000 channels on a 36 mm 2 or about 5-300 channels per mm 2 chip area.
- IC chips when IC chips have a pitch size larger than about 200 ⁇ , applying conductive epoxy is performed with needles having a diameter smaller than 100 ⁇ .
- the process on IC chips to form a patterned IC chip is done on a custom chip pattern mold.
- the mold serves as a safety buffer zone for the squeegee process.
- the size and the depth of the mold are designed to accommodate the size of the chip.
- FIG. 9A the peeling force is measured by a force gauge setup to investigate bonding strength.
- FIG. 9B shows a testing sample after bonding;
- FIG. 9C shows a schematic representation of the testing sample.
- Each data point represents the average of five measurements.
- Force gauge is fixed on a motorized stage to pull the partially peeled film at 90 degree with a speed of 100 ⁇ /s. Peeling force as a function of bonding temperature is shown in FIG. 10.
- FIG. 11 shows peeling force as a function of bonding pressure. After analaysis, the results show that the higher the bonding temperature and pressure, the stronger the bonding.
- FIG. 12A shows the maximum peeling force of different photopatternable adhesives.
- FIG. 12B shows the peeling forece versus bonding time for different photo-patternable adhesives.
- Z4620 can withstand pressure up to 0.5MPa. In certain aspects, the bonding time has almost no effect on the bonding strength when the samples are heated more than one hour.
- the present invention provides a biocompatible thin-film substrate.
- parylene is the preferred substrate, a skilled artisan will appreciate that the material can be other thin-film polymers such as polyimide, Teflon, kapton, or a printed circuit board (PCB) and the like.
- the invention provides a thin-film (e.g., parylene) substrate for attachment of a device, comprising: a first thin-film (e.g., parylene) layer; a metal adjacent to the first thin-film (e.g., parylene) layer; a second thin-film (e.g., parylene) layer adjacent to the metal to form a thin-film metal thin-film (e.g., parylene-metal -parylene) sandwich, wherein the second layer of parylene has an opening or cavity, the opening having at least one electrical contact provided on an internal surface thereof, the opening configured to accept at least one electrical circuit device and to provide electrical communication between the at least one electrical contact and the at least one electrical circuit device, said biocompatible thin-film (e.g., parylene) substrate configured to be implanted within a living organism after accepting the at least one electrical circuit device.
- a thin-film e.g., parylene
- the device having at least one electrical circuit is an integrated circuit (IC) chip.
- the device such as an IC chip is integrated in the substrate by a conductive epoxy squeegee electrical connection.
- the device is integrated into the substrate by a photo-patternable adhesive used as a mechanical glue.
- the whole structure e.g., the device having at least one electrical circuit is an integrated circuit (IC) chip
- parylene-C poly-para-xylylene-C
- the implanted device there can be communication with the implanted device and an external device.
- Communicaiton can be performed using either percutaneous connectors or wireless communication methods.
- Some of the kinds of signals that are communicated between the implanted device and an external device include power signals and data signals.
- Power signals can include signals that provide power from an external power supply to an implanted device, so that a battery present in the implanted device can be maintained in a suitable state of charge, or so that a battery can be eliminated from the implanted device.
- surgery may become necessary to replace the device because its battery is expected to reach the end of its useful life. Any surgery poses a health risk and unnecessary surgery is best avoided if possible, especially in persons who already have health issues. Accordingly, implantable devices that do not have to be replaced because of a battery are advantageous.
- Data signals can include data signals from an external detector to an implanted device (such as providing an electrical signal corresponding to an audible signal received by a microphone to a cochlear implant for communication by way of a person's nervous system to the person's brain), control signals from an external detector to an implanted device that provide the ability to control the implanted device by using such signals (e.g., controlling the state of operation of the implanted device to meet the needs of the person), and data signals from the implanted device to an external device to monitor the condition and operation of the implanted device itself, to monitor the condition of the person (such as pulse rate, cardiac signals, or other signals relating to the condition being treated) and conditions in the vicinity of the implanted device (such as physiological signals, e.g., temperature, pressure, pH), or to monitor the signals the implanted device is applying to the person.
- an implanted device such as providing an electrical signal corresponding to an audible signal received by a microphone to a cochlear implant for communication by way of
- data signals can be used to "tune” or "reprogram” the implanted device to take advantage of improvements in understanding of the person's condition and the intervention, assistance, or treatment that the person should have, or provide improvements in the implantable device operation and control procedures or operational software that are developed after the device is implanted.
- Additional integrated circuits within package or module can be arranged in a wide variety of ways and may be placed at other location within the package.
- different integrated circuits may be positioned in different photo-imageable layers and/or within the same layer.
- the integrated circuits can be stacked, positioned side-by-side, placed in close proximity to one another and/or be separated by a substantial distance relative to the overall size of package.
- Integrated circuits can also have a variety of different form factors, architectures and configurations. For example, they may take the form of relatively bare dice (e.g., unpackaged dice, flip chips etc.), or partially and/or fully packaged dice.
- FIG. 14 illustrates the setup 1400 for the test measurements. As shown therein, the electrode array outputs 1410, 1415 were probed to check the electrical connections. In certain aspects, these electrodes are placed on the macula of a mammalian eye such as a human eye.
- the setup 1400 includes a patterned chip 1428 and a parylene interface 1433.
- Photoresist 1420 is sandwich between the wafer 1428 and the parylene 1430.
- metal 1425 is included between the wafer 1428 and the photoresist 1420, or between the conductive epoxy 1418 and the wafer.
- Electrically conductive vias are provided to electrically connect components (e.g., ICs/traces/contacts/passive components, etc.) that reside at different layers of the package.
- the vias are arranged to extend through various layers.
- the vias may be used to couple traces from two different interconnect layers together; a die or another component to an interconnect layer; a contact to a trace, die or other component, etc.
- connection yield right after squeegee was measured by probing using 1440 and 1441, the stimulating electrodes. Afterwards, an additional thick parylene-C was coated on the entire device (except the output electrodes) to insulate and stabilize the connection, and to protect the metals embedded in the parylene-C substrate from corrosive body fluids. The connection yield was recorded after this coating. Finally, the device was soaked in 90°C saline solution for 5 days and the connection yield was again recorded.
- Chips with different pad separations and sizes were designed and fabricated for measurement.
- FIG. 16A shows chips with 40 ⁇ by 40 ⁇ pad size and 40 ⁇ separation.
- FIG. 16B shows connections between parylene substrate and a chip.
- FIG. 16C shows yield vs separation of pads.
- FIG. 16D shows yield vs side length of pads. The results show that high connection yield (>90%) can be achieved for pads as small as 40 ⁇ by 40 ⁇ and with a 40 ⁇ separation in between.
- a packaging technology is designed for devices with low- density connections.
- the present invention provides: a biocompatible package for low density connections, comprising:
- ASIC application specific integrated circuit
- PCB printed circuit board
- metal walls adjacent the feedthrough layer and a metal lid to encase and make the biocompatible package.
- FIG. 17 shows one embodiment of a low density packaging technology.
- an ASIC 1735 is placed faced down to connect with a feedthrough layer 1745 (e.g., made of ceramic or other biocompatible material) by flip-chip bonding techniques to make an electrical connection.
- Off-chip components 1715 are connected to a PCB 1720 by soldering or by using conductive epoxy to make an electrical connection.
- the PCB 1720 is attached to the backside of the ASIC 1735 by a non-conductive epoxy to make a mechanical connection, and wire bonded 1725 to the feedthrough layer 1745 (e.g. ceramic) to make an electrical connection.
- Solder balls 1740 are used to make an electrical connection between the ASIC 1735 and the feedthrough layer 1745 by flip chip bonding.
- Metal walls 1730a, 1730b are then hermetically encased with a metal lid 1710 by using laser welding techniques. As shown therein, the packaging has at least two metal walls 1730a, 1730b, which are hermetically encased with a feedthrough 1745 by for example, a brazing technique.
- the unique packaging technique adopts all mature connection and encasing technologies (targets to minimize the risk) including flip-chip bonding, wire bonding, brazing, or laser welding.
- it is designed for an implanted device with a circuit to survive in corrosive body fluids.
- the design is for 1-100 connections, such as about 1-50, 1-40, 1-30, 1-20, 1-10 within a small nanometer or millimeter area. This is satisfactory for current retinal prosthetic applications.
- a feedthrough layer 1745 serves as the interface between the enclosed circuit and a flexible electrode array.
- the signal can be sent from the circuit to the electrode array while the circuit can still be well protected.
- the ceramic feedthrough includes vias made of biocompatible metals, and the layout of vias can be designed according to the ASIC and other components.
- a biocompatible metal wall is first encased with the feedthrough layer by a brazing technique to form a brazing joint.
- the ASIC is then placed faced down to flip chip bond to the ceramic substrate.
- Other off-chip components 1715 can also be soldered or flip chip bonded to the ceramic substrate. Alternatively, an ASIC and an off-chip component can stay on the same plane and will occupy more area.
- Another preferred option is to first solder or conductive epoxy bond off-chip components to the PCB. Then, the PCB can be attached on top of the ASIC (back side) by a non-conductive epoxy or any glue. Thereafter, an additional wire bonding connection can be made from the PCB to ceramic feedthrough to form a complete circuit. In this case (shown in FIG. 17), an ASIC and off-chip components are on different planes to save surface area.
- an enclosed circuit box with a low profile and a small surface area is designed.
- the final step is to hermetically enclose the metal lid 1710 with the metal wall 1730 by laser welding. Before this, a vacuum bake treatment is performed to remove moisture or other impurities to aid in the hermetic process.
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Abstract
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/838,788 US10008443B2 (en) | 2012-04-30 | 2015-08-28 | Implant device |
PCT/US2016/049034 WO2017040302A1 (fr) | 2015-08-28 | 2016-08-26 | Dispositif d'implant et son procédé de fabrication |
Publications (2)
Publication Number | Publication Date |
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EP3340929A1 true EP3340929A1 (fr) | 2018-07-04 |
EP3340929A4 EP3340929A4 (fr) | 2019-04-10 |
Family
ID=58188115
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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EP16842692.2A Withdrawn EP3340929A4 (fr) | 2015-08-28 | 2016-08-26 | Dispositif d'implant et son procédé de fabrication |
Country Status (3)
Country | Link |
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EP (1) | EP3340929A4 (fr) |
CN (1) | CN108024851A (fr) |
WO (1) | WO2017040302A1 (fr) |
Families Citing this family (2)
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CN112869747B (zh) * | 2019-11-29 | 2022-11-25 | 清华大学 | 微电极及其制作和使用方法、塞类装置和微电极*** |
CN111588985B (zh) * | 2020-05-27 | 2021-02-19 | 微智医疗器械有限公司 | 植入装置及其组装方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5178957A (en) * | 1989-05-02 | 1993-01-12 | Minnesota Mining And Manufacturing Company | Noble metal-polymer composites and flexible thin-film conductors prepared therefrom |
EP1333883B1 (fr) * | 2000-11-16 | 2006-08-16 | Polyvalor, S.E.C. | Implant electronique de corps et systeme de vision artificielle pour ce dernier |
US7211884B1 (en) * | 2002-01-28 | 2007-05-01 | Pacesetter, Inc. | Implantable medical device construction using a flexible substrate |
US7142909B2 (en) * | 2002-04-11 | 2006-11-28 | Second Sight Medical Products, Inc. | Biocompatible bonding method and electronics package suitable for implantation |
US6667215B2 (en) * | 2002-05-02 | 2003-12-23 | 3M Innovative Properties | Method of making transistors |
US8374698B2 (en) * | 2006-08-18 | 2013-02-12 | Second Sight Medical Products, Inc. | Package for an implantable neural stimulation device |
CN100490767C (zh) * | 2006-12-07 | 2009-05-27 | 上海交通大学 | 可植入的视觉假体 |
EP2977080B1 (fr) * | 2007-07-27 | 2024-02-14 | Cortigent, Inc. | Dispositif implantable pour le cerveau |
WO2013165599A1 (fr) * | 2012-04-30 | 2013-11-07 | California Institute Of Technology | Dispositif d'implant à nombre de sorties élevé et procédé pour le fabriquer |
US9781842B2 (en) * | 2013-08-05 | 2017-10-03 | California Institute Of Technology | Long-term packaging for the protection of implant electronics |
-
2016
- 2016-08-26 WO PCT/US2016/049034 patent/WO2017040302A1/fr unknown
- 2016-08-26 CN CN201680049872.4A patent/CN108024851A/zh active Pending
- 2016-08-26 EP EP16842692.2A patent/EP3340929A4/fr not_active Withdrawn
Also Published As
Publication number | Publication date |
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WO2017040302A1 (fr) | 2017-03-09 |
EP3340929A4 (fr) | 2019-04-10 |
CN108024851A (zh) | 2018-05-11 |
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