EP3191894A1 - Method for controlling the defect rate in films obtained with mixtures of block copolymers and polymers - Google Patents
Method for controlling the defect rate in films obtained with mixtures of block copolymers and polymersInfo
- Publication number
- EP3191894A1 EP3191894A1 EP15771192.0A EP15771192A EP3191894A1 EP 3191894 A1 EP3191894 A1 EP 3191894A1 EP 15771192 A EP15771192 A EP 15771192A EP 3191894 A1 EP3191894 A1 EP 3191894A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- block copolymers
- polymers
- copolymer
- block
- prepared
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/002—Pretreatement
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L25/00—Compositions of, homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Compositions of derivatives of such polymers
- C08L25/02—Homopolymers or copolymers of hydrocarbons
- C08L25/04—Homopolymers or copolymers of styrene
- C08L25/06—Polystyrene
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L25/00—Compositions of, homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Compositions of derivatives of such polymers
- C08L25/02—Homopolymers or copolymers of hydrocarbons
- C08L25/04—Homopolymers or copolymers of styrene
- C08L25/08—Copolymers of styrene
- C08L25/14—Copolymers of styrene with unsaturated esters
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
- C08L33/04—Homopolymers or copolymers of esters
- C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
- C08L33/10—Homopolymers or copolymers of methacrylic acid esters
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D125/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Coating compositions based on derivatives of such polymers
- C09D125/02—Homopolymers or copolymers of hydrocarbons
- C09D125/04—Homopolymers or copolymers of styrene
- C09D125/08—Copolymers of styrene
- C09D125/14—Copolymers of styrene with unsaturated esters
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D153/00—Coating compositions based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Coating compositions based on derivatives of such polymers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
Definitions
- a method of controlling the defect rate in films obtained with blends of block copolymers and polymers relates to a method for controlling the defect rate in films obtained using a composition comprising a mixture of block copolymers and polymers deposited on a surface.
- the polymers comprise at least one monomer identical to those present in one or the other block of block copolymers.
- Russel et al demonstrate that the addition of poly-methyl methacrylate (PMMA) to a polystyrene-b-polymethyl methacrylate (PS-b-PMMA) copolymer, with a size of the poly-methyl methacrylate homopolymer slightly higher than that of the poly-methyl methacrylate block of the corresponding block copolymer makes it possible to obtain a perpendicular cylindrical morphology independent of the thickness of the film.
- PMMA poly-methyl methacrylate
- PS-b-PMMA polystyrene-b-polymethyl methacrylate
- Kitano H. et al. report a favored perpendicular control of cylindrical domains by adding homopolymers of polystyrene to polystyrene-b-poly-methyl methacrylate. They suggest that this property comes from the decrease the constraint of hexagonal symmetry when adding polystyrene. The same effect is demonstrated by the addition of poly-methyl methacrylate.
- Soft Matter., 2008, 1454-1466 Up Ahn D. et al. also present a similar discussion by focusing their work on the effect of the molecular weight of the homopolymer added to the block copolymer on the size, stability and periodicity of the rolls.
- the nanostructuration of a block copolymer of a surface treated by the process of the invention can take the forms such as cylindrical (hexagonal symmetry (symmetry of hexagonal network primitive "6mm") according to the notation of Hermann-mauguin , or tetragonal / quadratic ("4mm” tetragonal lattice symmetry), spherical (hexagonal symmetry ("6mm” or “6mmmm”) hexagonal lattice symmetry), or tetragonal / quadratic (symmetry of 4 mm primitive tetragonal network), or cubic (“i3 ⁇ 4n” network symmetry), lamellar, or gyroid.
- the preferred form of nanostructuring is of the hexagonal cylindrical type.
- the method for self-assembly of block copolymers on a treated surface according to the invention is governed by thermodynamic laws.
- each cylinder is surrounded by 6 equidistant neighboring cylinders if there is no defect.
- Several types of defects can thus be identified. The first type is based on the evaluation of the number of neighbors around a cylinder constituted by the arrangement of the block copolymer, also called coordination defects. If five or seven cylinders surround the cylinder considered, it will be considered that there is a lack of coordination.
- the second type of defect considers the average distance between the cylinders surrounding the cylinder considered.
- a last type of defect concerns the angle of cylinders of the block copolymer deposited on the surface. When the block copolymer is no longer perpendicular to the surface, it will be considered that a defect of orientation appears.
- the method of the invention makes it possible to obtain nanostructured assemblies in the form of films with a minimum of defect in orientation, coordination or distance over large monocrystalline surfaces.
- the method of the invention allows the preparation of films with an improved critical dimension uniformity parameter.
- Critical dimension uniformity (CDU) in a block copolymer film having a cylindrical morphology corresponds to the roll size uniformity of the rolls.
- all the cylinders must have the same diameter, because any variation of this diameter will induce variations on the performances (conductivity, characteristics of the transfer curves, evacuated thermal power, resistance, etc.) for the applications. considered.
- mixtures comprising block copolymers and polymers which comprise at least one monomer identical to those present in one or the other block of the block copolymers allows a significant reduction of the aforementioned defects accompanied by optimum as regards the mass of the polymers mixed with the block copolymers and the ratio of the masses of the polymers and the masses of the block copolymers.
- the invention relates to a method for controlling the defect rate of orientation, coordination or distance defects on large monocrystalline surfaces with an improvement of the CDU of a nano - structured assembly in the form of a copolymer blending film.
- blocks and polymers, this mixture comprising n block copolymers and m polymers which comprise at least one monomer identical to those present in one or the other block of the block copolymers comprising the following steps:
- surface is meant a surface that can be flat or non-planar.
- Annealing means a heating step for evaporation of the solvent when it is present, and allowing the establishment of the desired nano-structuring.
- Any block copolymer, whatever its associated morphology, may be used in the context of the invention, be it diblock copolymer, linear or star triblock, linear multiblock, comb or star. Preferably, these are diblock or triblock copolymers, and more preferably diblock copolymers.
- the polymers will be either homopolymers or random copolymers.
- n polymeric block copolymers n being an integer between 1 and 10, inclusive.
- n is between 1 and 5, inclusive, and preferably n is between 1 and 2 inclusive, and more preferably n is 1, m being an integer between 1 and 10, terminals included.
- m is between 1 and 5, inclusive, and preferably m is between 1 and 2 inclusive, and more preferably m is equal to 1.
- block copolymers and polymers may be synthesized by any techniques known to those skilled in the art among which mention may be made of polycondensation, ring-opening polymerization, anionic, cationic or radical polymerization these techniques can be controlled or not, and combined or not.
- the copolymers are prepared by radical polymerization, they may be controlled by any known technique such as NMP ("Nitroxide Mediated Polymerization"), RAFT ("Reversible Addition and Fragmentation Transfer”), ATRP (“Atom Transfer Radical Polymerization”) , INIFERTER ("Initiator-Transfer- Termination "), RITP (" Reverse Iodine Transfer
- ITP Iodine Transfer Polymerization
- the block copolymers and the polymers are prepared by controlled radical polymerization, more particularly by nitroxide-controlled polymerization, in particular N-tert-butyl-1-diethylphosphono-2, 2-nitroxide. dimethylpropyl.
- the block copolymers and the polymers are prepared by anionic polymerization.
- the constituent monomers of the block copolymers and polymers will be chosen from the following monomers: at least one vinyl, vinylidene, diene, olefinic, allylic or (meth) acrylic monomer.
- This monomer is chosen more particularly from vinylaromatic monomers such as styrene or substituted styrenes, in particular alpha-methylstyrene, silylated styrenes, acrylic monomers such as acrylic acid or its salts, alkyl acrylates and cycloalkyl acrylates.
- aryl such as methyl acrylate, ethyl acrylate, butyl acrylate, ethylhexyl acrylate or phenyl acrylate, hydroxyalkyl acrylates such as 2-hydroxyethyl acrylate, alkyl ether acrylates such as 2-methoxyethyl acrylate, alkoxy- or aryloxy-polyalkylene glycol acrylates such as methoxypolyethylene glycol acrylates, ethoxypolyethylene glycol acrylates, methoxypolypropylene glycol acrylates, methoxypolypropylene glycol acrylates, polyethylene glycol-polypropylene glycol or mixtures thereof, aminoalkyl acrylates such as 2- (dimethylamino) ethyl acrylate (ADAME), fluorinated acrylates, silyl acrylates, phosphorus acrylates such as alkylene glycol phosphate acrylates, glycidyl
- the block copolymers consist of block copolymer one of which blocks comprises a styrene monomer and the other block comprises a methacrylic monomer; more preferably, the block copolymers consist of block copolymer one of which blocks comprises styrene and the other block comprises methyl methacrylate.
- the polymers preferably comprise a styrene monomer or methacrylic monomer; preferably, the polymers comprise styrene or methyl methacrylate. In a preferred context of the invention, the polymers consist of styrene.
- Monomers selected from the following entities will be preferred: at least one vinyl, vinylidene, diene, olefinic, allylic or (meth) acrylic monomer.
- These monomers are chosen more particularly from vinylaromatic monomers such as styrene or substituted styrenes, especially alpha-methylstyrene, silylated styrenes, acrylic monomers such as alkyl acrylates, cycloalkyl acrylates or aryl acrylates such as acrylate.
- vinylaromatic monomers such as styrene or substituted styrenes, especially alpha-methylstyrene, silylated styrenes, acrylic monomers such as alkyl acrylates, cycloalkyl acrylates or aryl acrylates such as acrylate.
- ether alkyl acrylates such as 2-methoxyethyl acrylate, alkoxy- or aryloxy-polyalkyleneglycol acrylates such as methoxypolyethylene glycol acrylates, ethoxypolyethylene glycol acrylates, methoxypolypropylene glycol acrylates, methoxy-polyethylene glycol-polypropylene glycol acrylates or mixtures thereof, aminoalkyl acrylates such as 2- (dimethylamino) ethyl acrylate (ADAME), fluorinated acrylates, silylated acrylates , phosphorus acrylates such as alkylene glycol phosphate acrylates, glycidyl acrylates, dicyclopent alkyl, cycloalkyl, alkenyl or aryl methacrylates such as methyl methacrylate (MMA), lauryl
- block copolymers are prepared by anionic polymerization and the Polymers will be prepared by controlled radical polymerization.
- the mass copolymer block / polymer ratios will be between 99/1 and 1/99, preferably between 97/03 and 03/97, more preferably between 97/03 and 55/45 and ideally between 95/05 and 60/40.
- the ratio of the molecular weight in nmobre of the polymer to the block copolymer is between 0.2 and 4, preferably between 1 and 3, and so still preferred between 1 and 2.
- the invention particularly relates to the use of the method that is the subject of the invention for producing lithography masks or films, as well as the masks and films obtained.
- the desired structuring for example, generation of domains perpendicular to the surface
- there is deposited on the surface a random copolymer whose monomers may be identical in whole or in part to those used in the block copolymer that is to be deposited.
- Mansky et al. Science, vol 275 pages 1458-1460, 1997) describes this technology well, now well known to those skilled in the art.
- the preferred surfaces include surfaces made of silicon, silicon having a native or thermal oxide layer, germanium, platinum, tungsten, gold, titanium nitrides, graphenes, BARC (Bottom Anti Reflecting Coating) or any other anti-reflective layer used in lithography.
- a solution of the mixture of block copolymers is deposited and the solvent is evaporated according to techniques known to those skilled in the art such as the so-called “spin coating” technique, “Doctor Blade” “knife system” “Slot die System” but any other technique can be used such as a dry deposit, that is to say without going through a prior dissolution.
- the surfaces may be said to be “free” (planar and homogeneous surface both from a topographic and chemical point of view) or to have guide structures for the "pattern" block copolymer, whether this guidance is of the chemical guidance type (called “guiding”). by chemistry-epitaxy ”) or physical / topographical guidance (called” graphoepitaxial guidance ").
- block copolymers are PS-fc-PMMA copolymers prepared according to a protocol described in EP0749987, EP0749987 and EP0524054, with recovery of the block copolymer considered by precipitation in a non-solvent at the end of the synthesis, such as a mixture 80 Of cyclohexane / heptane.
- the polymers are homopolymers of PS prepared according to the same protocol, the second step (PMMA) not being carried out, the living PS is deactivated by the addition of a methanol / hydrochloric acid mixture or any other proton donor.
- the molecular weights and the indices of dispersity corresponding to the ratio between weight-average molecular weight (Mw) and number-average molecular mass (Mn), are obtained by SEC (Size exclusion Chromatography), using 2 columns in series AGILENT 3ym ResiPore, in medium BHT stabilized THF at a flow rate of 1 mL / min at 40 ° C with samples concentrated at 1 g / L, with prior calibration with calibrated polystyrene samples using a prepared Easical PS-2 pack.
- the mass ratio PS / PMMA is obtained by proton NMR on a Bruker 400 apparatus, integrating the 5 aromatic protons of the PS and the 3 protons of methoxy PMMA.
- the invention may also be carried out using other block copolymers and other PS from other sources.
- the silicon wafers (crystallographic orientation ⁇ 100 ⁇ ) are cut manually into pieces of 3x4 cm and cleaned by piranha treatment (H2 SO 4 / H2O2 2: 1 (v: v)) for 15 minutes, then rinsed with water. ionized, and dried under nitrogen flow just before functionalization. The rest of the procedure is that described by Mansky et al. (Science, 1997, 1458), with only one modification (the annealing is done under ambient atmosphere and not under vacuum).
- PS-r-PMMA random mass copolymer molecular weight of 10,000 g / mol and PS / PMMA ratio 74/26 prepared by controlled radical polymerization using NMP technology, according to a protocol described in WO20121400383, Example 1 and Example 2 (copolymer 10), allowing the neutralization of the surface is dissolved in toluene to obtain solutions at 1.5% by weight. This solution is dispensed by hand over a freshly cleaned wafer, then spread by spin-coating at 700 rpm to obtain a film of about 40 nm thick. The substrate is then simply deposited on a heating plate, previously heated to the desired temperature, under ambient atmosphere for a variable time.
- the substrate is then washed by sonication in several toluene baths for a few minutes in order to remove the ungrafted polymer from the surface and then dried under a stream of nitrogen. It may be noted that throughout this procedure, toluene can be interchanged with PGMEA.
- Any other copolymer may be used, typically a random copolymer P (MMA-co-Styrene) as used by Mansky provided the appropriate styrene and MMA composition is selected for neutralization.
- a random copolymer P MMA-co-Styrene
- the solution of the block copolymer or mixture of block copolymers and of polymer (1% by mass in propylene glycol-monomethyl ether acetate) is then deposited by "spin coating" on the previously treated surface and then 230 ° thermal annealing is carried out. C for at least 5 minutes to evaporate the solvent and allow time for the morphology to establish.
- the procedure is such that the thickness of the block copolymer or block copolymer blend film is 40 nm.
- the solution to be deposited 1% in the PGMEA
- the solution to be deposited is deposited on a 2.7 ⁇ 2.7 cm sample by "spin coating" at 700 rpm.
- All block copolymer / homopolymer mixtures have a mass ratio of 9/1.
- FIG. 1 shows the percentage of coordination defects among the number of cylinders detected as a function of the ratio of the number-average molecular masses of the polymer to the number-average molecular mass of the block copolymer. It is found that mixtures of block copolymers with polymers have fewer coordination defects and that an optimum is observed for number-average molecular weight ratios of the polymer over the number-average molecular weight of the block copolymer between 1 and 2.
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Engineering & Computer Science (AREA)
- Graft Or Block Polymers (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1458477A FR3025616A1 (en) | 2014-09-10 | 2014-09-10 | METHOD FOR CONTROLLING THE DEFECT RATE IN FILMS OBTAINED WITH MIXTURES OF BLOCK COPOLYMERS AND POLYMERS |
PCT/FR2015/052389 WO2016038298A1 (en) | 2014-09-10 | 2015-09-09 | Method for controlling the defect rate in films obtained with mixtures of block copolymers and polymers |
Publications (1)
Publication Number | Publication Date |
---|---|
EP3191894A1 true EP3191894A1 (en) | 2017-07-19 |
Family
ID=51726818
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP15771192.0A Pending EP3191894A1 (en) | 2014-09-10 | 2015-09-09 | Method for controlling the defect rate in films obtained with mixtures of block copolymers and polymers |
Country Status (9)
Country | Link |
---|---|
US (1) | US20170307973A1 (en) |
EP (1) | EP3191894A1 (en) |
JP (1) | JP6628791B2 (en) |
KR (1) | KR101941382B1 (en) |
CN (1) | CN106687862B (en) |
FR (1) | FR3025616A1 (en) |
SG (1) | SG11201701876XA (en) |
TW (1) | TWI593724B (en) |
WO (1) | WO2016038298A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3051964B1 (en) * | 2016-05-27 | 2018-11-09 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | METHOD FOR FORMING A FUNCTIONALIZED GUIDING PATTERN FOR A GRAPHO-EPITAXY PROCESS |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2843394B1 (en) * | 2002-08-07 | 2005-12-30 | Atofina | ALCOXYAMINES FROM NITROXIDES B-PHOSPHORUS, THEIR USE IN RADICAL POLYMERIZATION |
US8133534B2 (en) * | 2004-11-22 | 2012-03-13 | Wisconsin Alumni Research Foundation | Methods and compositions for forming patterns with isolated or discrete features using block copolymer materials |
JP5136999B2 (en) * | 2005-11-18 | 2013-02-06 | 国立大学法人京都大学 | Pattern substrate manufacturing method, pattern transfer body, pattern medium for magnetic recording, and polymer thin film |
US20080312377A1 (en) * | 2005-12-16 | 2008-12-18 | Arkema, Inc. | Low Surface Energy Block Copolymer Preparation Methods and Applications |
JP2008239861A (en) * | 2007-03-28 | 2008-10-09 | Asahi Kasei Chemicals Corp | Hydrogenated styrenic resin composition |
US8404124B2 (en) * | 2007-06-12 | 2013-03-26 | Micron Technology, Inc. | Alternating self-assembling morphologies of diblock copolymers controlled by variations in surfaces |
WO2011116217A1 (en) * | 2010-03-18 | 2011-09-22 | Board Of Regents The University Of Texas System | Surface treatments for alignment of block copolymers |
US20120135159A1 (en) * | 2010-11-30 | 2012-05-31 | Seagate Technology Llc | System and method for imprint-guided block copolymer nano-patterning |
FR2983773B1 (en) * | 2011-12-09 | 2014-10-24 | Arkema France | PROCESS FOR PREPARING SURFACES |
JP5891075B2 (en) * | 2012-03-08 | 2016-03-22 | 東京応化工業株式会社 | Block copolymer-containing composition and pattern reduction method |
JP2013235187A (en) * | 2012-05-10 | 2013-11-21 | Asahi Kasei E-Materials Corp | Resin composition for hole shrink |
US9012545B2 (en) * | 2012-08-31 | 2015-04-21 | Rohm And Haas Electronic Materials Llc | Composition and method for preparing pattern on a substrate |
US8822616B1 (en) * | 2013-02-08 | 2014-09-02 | Rohm And Haas Electronic Materials Llc | Block copolymer formulation and methods relating thereto |
FR3008986B1 (en) * | 2013-07-25 | 2016-12-30 | Arkema France | METHOD OF CONTROLLING THE PERIOD CHARACTERIZING THE MORPHOLOGY OBTAINED FROM A MIXTURE OF BLOCK COPOLYMER AND (CO) POLYMER FROM ONE OF THE BLOCKS |
-
2014
- 2014-09-10 FR FR1458477A patent/FR3025616A1/en active Pending
-
2015
- 2015-09-03 TW TW104129207A patent/TWI593724B/en active
- 2015-09-09 WO PCT/FR2015/052389 patent/WO2016038298A1/en active Application Filing
- 2015-09-09 SG SG11201701876XA patent/SG11201701876XA/en unknown
- 2015-09-09 KR KR1020177006580A patent/KR101941382B1/en active IP Right Grant
- 2015-09-09 US US15/510,204 patent/US20170307973A1/en not_active Abandoned
- 2015-09-09 EP EP15771192.0A patent/EP3191894A1/en active Pending
- 2015-09-09 CN CN201580048764.0A patent/CN106687862B/en active Active
- 2015-09-09 JP JP2017513114A patent/JP6628791B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TW201623382A (en) | 2016-07-01 |
CN106687862B (en) | 2020-12-22 |
KR20170042666A (en) | 2017-04-19 |
WO2016038298A1 (en) | 2016-03-17 |
CN106687862A (en) | 2017-05-17 |
JP6628791B2 (en) | 2020-01-15 |
JP2017528566A (en) | 2017-09-28 |
FR3025616A1 (en) | 2016-03-11 |
TWI593724B (en) | 2017-08-01 |
SG11201701876XA (en) | 2017-04-27 |
US20170307973A1 (en) | 2017-10-26 |
KR101941382B1 (en) | 2019-01-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI461440B (en) | Diblock copolymer blend composition | |
TWI498384B (en) | Thermal annealing process | |
US9527108B2 (en) | Method for preparing surfaces | |
TWI498377B (en) | Blended block copolymer composition | |
FR3010414A1 (en) | PROCESS FOR OBTAINING NANO-STRUCTURED THICK FILMS OBTAINED FROM A BLOCK COPOLYMER COMPOSITION | |
FR3008987A1 (en) | METHOD OF CONTROLLING THE PERIOD CHARACTERIZING THE MORPHOLOGY OBTAINED FROM A MIXTURE OF BLOCK COPOLYMER AND (CO) POLYMER FROM ONE OF THE BLOCKS | |
FR3010413A1 (en) | METHOD FOR CONTROLLING THE PERIOD OF A NANO-STRUCTURE ASSEMBLY COMPRISING A MIXTURE OF BLOCK COPOLYMERS | |
WO2015092241A1 (en) | Process for the nanostructuring of a block copolymer film using a nonstructured block copolymer based on styrene and on methyl methacrylate, and nanostructured block copolymer film | |
WO2015004392A1 (en) | Method for the perpendicular orientation of nanodomains of block copolymers, using statistical or gradient copolymers, the monomers of which differ at least in part from those present in each of the blocks of the block copolymer | |
WO2016116705A1 (en) | Method for improving the critical dimension uniformity of ordered films of block copolymers | |
EP3191894A1 (en) | Method for controlling the defect rate in films obtained with mixtures of block copolymers and polymers | |
FR3045643A1 (en) | METHOD FOR ENHANCING THE CRITICAL DIMENSIONAL UNIFORMITY OF ORDINATED BLOCK COPOLYMER FILMS | |
EP3248063A1 (en) | Method for producing thick ordered films and high periods comprising a block copolymer | |
FR3010411A1 (en) | METHOD FOR CONTROLLING THE PERIOD OF A NANO-STRUCTURE ASSEMBLY COMPRISING A MIXTURE OF BLOCK COPOLYMERS | |
WO2016116707A1 (en) | Method for reducing defects in an ordered film made of block copolymer | |
FR3010412A1 (en) | PROCESS FOR OBTAINING NANO-STRUCTURE THICK FILMS OBTAINED FROM BLOCK COPOLYMERS | |
WO2016116708A1 (en) | Method for reducing the assembly time of ordered films made of block copolymer | |
FR3032713A1 (en) | METHOD OF REDUCING DEFECTS IN ORDINATED BLOCK COPOLYMER FILM | |
FR3032714A1 (en) | METHOD FOR REDUCING THE TIME OF ASSEMBLY OF ORDERED BLOCK COPOLYMER FILMS |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE |
|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE |
|
17P | Request for examination filed |
Effective date: 20170303 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
AX | Request for extension of the european patent |
Extension state: BA ME |
|
DAV | Request for validation of the european patent (deleted) | ||
DAX | Request for extension of the european patent (deleted) | ||
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: EXAMINATION IS IN PROGRESS |
|
17Q | First examination report despatched |
Effective date: 20210521 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: EXAMINATION IS IN PROGRESS |