EP3125362A1 - Grundzelle eines übertragungsnetzes für eine rekonfigurierbare antenne - Google Patents

Grundzelle eines übertragungsnetzes für eine rekonfigurierbare antenne Download PDF

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Publication number
EP3125362A1
EP3125362A1 EP16181407.4A EP16181407A EP3125362A1 EP 3125362 A1 EP3125362 A1 EP 3125362A1 EP 16181407 A EP16181407 A EP 16181407A EP 3125362 A1 EP3125362 A1 EP 3125362A1
Authority
EP
European Patent Office
Prior art keywords
elementary cell
antenna
transmission antenna
wafer
switches
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP16181407.4A
Other languages
English (en)
French (fr)
Other versions
EP3125362B1 (de
Inventor
Antonio Clemente
Laurent Dussopt
Bruno Reig
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
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Publication of EP3125362A1 publication Critical patent/EP3125362A1/de
Application granted granted Critical
Publication of EP3125362B1 publication Critical patent/EP3125362B1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant antennas
    • H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/48—Earthing means; Earth screens; Counterpoises
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/0006—Particular feeding systems
    • H01Q21/0018—Space- fed arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/0087—Apparatus or processes specially adapted for manufacturing antenna arrays
    • H01Q21/0093—Monolithic arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q23/00—Antennas with active circuits or circuit elements integrated within them or attached to them
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
    • H01Q3/44—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the electric or magnetic characteristics of reflecting, refracting, or diffracting devices associated with the radiating element
    • H01Q3/46—Active lenses or reflecting arrays

Definitions

  • the present invention relates to an elementary cell of a transmitter network for a reconfigurable antenna at an operating frequency, preferably between 30 GHz and 110 GHz.
  • the present invention also relates to a reconfigurable antenna comprising a transmitter network comprising such elementary cells.
  • the generally modifiable characteristic are frequency response, radiation pattern (also called beam), and polarization.
  • the reconfiguration of the frequency response covers various functionalities such as frequency switching, frequency tuning, bandwidth variation, frequency filtering and so on.
  • the reconfiguration of the radiation pattern covers various features such as angular scanning of the beam pointing direction (also called misalignment), beamwidth (i.e., concentration of radiation in a particular direction), spatial filtering, beam or multibeam formation (eg multiple narrow beams replacing a wide beam) etc.
  • the present invention more specifically relates to a reconfigurable antenna with a transmitter network at millimeter frequencies.
  • a transmitting network comprises at least one radiation source, preferably emitting in a spectral range between 30 GHz and 110 GHz, the radiation source or sources irradiating a set of elementary cells.
  • the characteristic dimension of the elementary cells must be less than or equal to the half-wavelength of the radiation source or sources.
  • the spectral range of the radiation source or sources is in particular between 30 GHz and 110 GHz, the corresponding wavelength is less than 1 cm.
  • the switches are formed on the second surface of the second printed circuit board, in the separation zone. The formation of the switches therefore becomes problematic because of the reduced dimensions of the transmission antenna.
  • the switches, arranged inside a package (" package" in English), and reported to the second surface of the second printed circuit board, are then likely to significantly degrade the performance of the elementary cell. Indeed, the housing of each switch tends to disturb the environment close to the first and second radiation surfaces, and thereby affects the radiation pattern of the transmission antenna.
  • electrical connections are present between the housing and the transmission antenna to make the corresponding switch functional. These electrical connections complicate the integration of the switches, occupying a non-negligible space in the separation zone, which is reduced in size.
  • slice (wafer in English) means a cut portion of an ingot of a semiconductor material, conventionally a disk, used as a base material for forming components, in this case switches.
  • semiconductor is meant that the material has an electrical conductivity at 300 K of between 10 -8 and 10 3 S / cm.
  • the transmission antenna and the switches share a single substrate, in this case the slice.
  • the transmission antenna and the switches are made jointly during the same manufacturing process.
  • Such an elementary cell according to the invention makes it easier to integrate the switches in the separation zone, despite the restricted dimensions of the transmission antenna, when the operating frequency is between 30 GHz and 110 GHz.
  • the switches are formed on the wafer, monolithically with the transmission antenna. Switches are therefore not reported on a printed circuit board (PCB for " Printed Circuit Board” in English) contrary to the state of the art, which leads to a lack of housing and electrical connections between the housing and the transmission antenna, sources of degradation of the performance of the elementary cell.
  • PCB printed circuit board
  • the receiving antenna and the transmission antenna are planar antennas (" patch" in English).
  • the receiving antenna is formed at the first surface of the first printed circuit board, while the transmitting antenna is formed at the first surface of the wafer.
  • such an elementary cell according to the invention uses a hybrid integration "PCB / wafer” for reception / transmission antennas with planar technology, which is favorable for industrial production.
  • the elementary cell comprises a second printed circuit board comprising a first surface assembled on the ground plane, and a second opposite surface, and the wafer is assembled to the second surface of the second card.
  • the first surface of the wafer is assembled to the second surface of the second card.
  • the wafer includes a second surface opposite the first surface, and the second wafer surface is joined to the second surface of the second card.
  • the elementary cell comprises a substrate of a dielectric material assembled to the second surface of the second card, and the substrate comprises a cavity shaped to receive the wafer.
  • Dielectric means that the material has an electrical conductivity at 300 K less than 10 -8 S / cm.
  • the cavity of the substrate allows a good alignment of the wafer relative to the second printed circuit board.
  • the phase shift circuit comprises a first set of electrically conductive tracks, arranged at the second surface of the second card to bias the switches.
  • the tracks are made of an electrically conductive material.
  • Electrically conductive means that the material has an electrical conductivity at 300 K greater than 10 3 S / cm.
  • the electrically conductive material is preferably a metal, more preferably copper.
  • Such a second printed circuit board allows a polarization of the switches with minimal space, and without disturbing the radiation pattern of the transmission antenna.
  • Such a second printed circuit board makes it possible to increase the number of available polarization lines with a minimum size, and without disturbing the radiation pattern of the transmission antenna.
  • the vias (“vias" in English) provide the electrical connection between the first and second sets of electrically conductive tracks.
  • the second surface of the second card comprises contact pads
  • the wafer comprises brazing soldered balls on the contact pads so as to assemble the wafer to the second card.
  • the contact pads bump contact
  • solder balls provide a more robust assembly wire wire (“ wire bonding" in English), and with less electromagnetic disturbances.
  • the contact pads are electrically connected to the first set of electrically conductive tracks, and the switches are electrically connected to the solder balls.
  • the second surface of the second card comprises at least one cavity formed opposite the transmission antenna.
  • microelectromechanical system MEMS “Micro Electro-Mechanical Systems” also covers a nanoelectromechanical systems (NEMS “Nano Electro-Mechanical Systems”).
  • the elementary cell comprises an encapsulation layer arranged to encapsulate each electromechanical microsystem, the encapsulation layer being formed monolithically with the corresponding electromechanical microsystem.
  • Such an encapsulation layer makes it possible to improve the reliability of the corresponding electromechanical microsystem without major disturbance of the radiation pattern of the transmission antenna.
  • electrically conductive is meant that the element has an electrical conductivity at 300 K greater than 10 3 S / cm.
  • the phase-change material is selected from the group comprising GeTe, Ge 2 Sb 2 Te 5 .
  • phase change materials that can be used as memory.
  • the wafer has a resistivity greater than or equal to 2000 ⁇ .cm.
  • the semiconductor material of the wafer is based on silicon.
  • the present invention also relates to an antenna reconfigurable at an operating frequency, preferably between 30 GHz and 110 GHz, comprising a transmitter network comprising a plurality of elementary cells according to the invention.
  • an elementary cell 1 of a transmitting network RT for a reconfigurable antenna at an operating frequency, preferably between 30 GHz and 110 GHz.
  • the elementary cell 1 comprises a wafer 7 of a semiconductor material, electrically isolated from the ground plane 5.
  • the wafer 7 comprises a first surface 70 provided with the first and second radiating surfaces 30, 31 of the transmission antenna 3
  • the switches 4 are formed at the first surface 70 of the wafer 7, in the separation zone ZS, monolithically with the transmission antenna 3.
  • the first surface 70 of the wafer 7 is advantageously covered with a dielectric layer 700.
  • the dielectric layer 700 is preferably an oxide of the semiconductor material.
  • the slice 7 advantageously has a resistivity greater than or equal to 2000 ⁇ .cm.
  • the semiconductor material of the wafer 7 is preferably based on silicon. For example, for an operating frequency of 60 GHz, the slice 7 preferably has a thickness of the order of 100 microns.
  • the elementary cell 1 advantageously comprises a second printed circuit board 9 comprising a first surface 90 assembled on the ground plane 5, and a second surface 91 opposite.
  • the wafer 7 is connected to the second surface 91 of the second card 9.
  • the first surface 70 of the wafer 7 is assembled to the second surface 91 of the second card 9.
  • the wafer 7 comprises a second surface 71 opposite the first surface 70, and the second surface 71 of the wafer 7 is connected to the second surface 91 of the second card 9.
  • the second surface 91 of the second card 9 advantageously comprises at least one cavity 911 arranged opposite the transmission antenna 3.
  • the cavity or cavities 911 have a width of the order of 200 microns.
  • the first and second cards 6, 9 are Rogers type RO3003, with a relative permittivity equal to 3.
  • the first card 6 preferably has a thickness of the order of 250 microns
  • the second card 9 preferably has a thickness of about 100 microns.
  • the elementary cell 1 advantageously comprises a bonding film interposed between the first and second cards 6, 9.
  • the transmitting network RT comprises at least one radiation source S, preferably emitting in a spectral range between 30 GHz and 110 GHz, the source or sources of radiation S irradiating a set of elementary cells 1.
  • the receiving antenna 2 is a planar antenna.
  • the receiving antenna 2 may be of square, rectangular, slot, circular, elliptical, triangular, spiral, etc. type.
  • the shape of the slot 20 may be for example U, rectangular, annular, circular, elliptical etc.
  • the receiving antenna 2 is a rectangular planar antenna 20 with a U-shaped slot.
  • the transmission antenna 3 is a planar antenna. As illustrated in figure 6 the first and second radiation surfaces 30, 31 are disjoint. A slot is advantageously provided in the transmission antenna 3 to electrically isolate the first and second radiation surfaces 30, 31.
  • the slot defines the separation zone ZS.
  • the slot is preferably annular, rectangular section. Of course, other shapes are possible for the slot such as an elliptical or circular shape.
  • the electrical insulation of the first and second radiation surfaces 30, 31 may be provided by a dielectric material.
  • the first and second radiation surfaces 30, 31 advantageously have an axis of symmetry so as not to degrade the polarization of the transmitted wave And by the transmission antenna 3 by minimizing the excitation of undesired resonance modes.
  • the first radiation surface 30 forms preferably a ring of rectangular section.
  • the second radiation surface 31 preferentially forms a rectangular band.
  • the second radiation surface 31 is advantageously circumscribed by the first radiation surface 30 in order to avoid the formation of parasitic currents. Additional radiation surfaces may advantageously be stacked on the first and second radiation surfaces 30, 31 in order to increase the bandwidth of the transmission antenna 3.
  • the reception antenna 2 and the transmission antenna 3 are advantageously rotatable with respect to each other so as to modify the polarization of the incident wave E i .
  • a rotation of the transmission antenna 3 of 90 ° relative to the receiving antenna 2 makes it possible, for example, to pass from a vertical polarization of the incident wave E i to a horizontal polarization of the transmitted wave.
  • the receiving antenna 2 and the transmitting antenna 3 are electrically connected to one another so as to be able to feed them and to couple them, in part via a main interconnection hole 8, preferably a central one, of metal preference.
  • the main via 8 passes through an opening in the ground plane 5.
  • the main interconnection 8 is not in contact with the ground plane 5.
  • the main via 8 preferably has a diameter of the order of 100 microns.
  • the ground plane 5 forms an electromagnetic shielding between the receiving antenna 2 and the transmission antenna 3.
  • the receiving antenna 2 is electrically connected to the ground plane 5 via vias 80 preferably metal.
  • the vias 80 preferably have a diameter of the order of 75 microns.
  • the main via 8 is preferably connected to the receiving antenna 2 by a first connection point (not shown).
  • the connection point is advantageously located near an edge of the receiving antenna 2 so as not to affect its radiation when the receiving antenna 2 is of square type.
  • the connection point is advantageously located near the center of the receiving antenna 2 when the receiving antenna 2 is of U-slot type. In general, the position of the connection point varies according to the specific geometry of the receiving antenna 2 in order to excite the fundamental mode of resonance.
  • the second surface 91 of the second card 9 advantageously comprises contact pads 910, 910 '.
  • the wafer 7 advantageously comprises solder balls B, preferably metal brazed on the contact pads 910, 910 'so as to assemble the wafer 7 to the second card 9.
  • the contact pads 910' are advantageously located on the periphery of the the second surface 91 of the second card 9 to ensure a good mechanical strength of the elementary cell 1.
  • the contact pads 910 also provide an electrical connection in conjugation with the solder balls B.
  • the main interconnection 8 is preferably connected to the transmission antenna 3 by a second connection point (not shown), by means of a soldering ball B brazed to a contact pad 910.
  • the second connection point is advantageously located near the center of the transmission antenna 3 so as to favor the fundamental mode of resonance.
  • the elementary cell 1 advantageously comprises a substrate 10 of a dielectric material assembled to the second surface 71 of the second card, and the substrate 10 comprises a cavity 100 shaped to receive the wafer 7.
  • the cavity 100 of the substrate 10 and the contact pads 910, 910 ' provide a good alignment of the wafer 7 relative to the second printed circuit board 9.
  • the phase shifting circuit advantageously comprises first and second transmission lines LT1, LT2 arranged at the first surface 70 of the slot 7.
  • the first transmission lines LT1 are arranged to connect the tracks P1 to the switches 4 in order to be able to control the switches 4.
  • the second transmission lines LT2 are arranged in the separation zone ZS so as to transfer the mass to the switches 4.
  • the elementary cell 1 advantageously comprises interconnection holes 72 formed in the slice 7, such as TSV (" through-silicon via" in English) when the semiconductor material is based on silicon.
  • the vias 72 are arranged to electrically connect the first and second transmission lines LT1, LT2 to the first set of tracks P1.
  • the phase shift circuit advantageously comprises two switches 4 arranged on either side of the second connection point in the separation zone ZS.
  • the two switches 4 can form two independent components or a single component type SPDT (for " Single Pole Double Throw” in English), with an input and two switched outputs.
  • the switches 4 are advantageously arranged to join the first and second radiation surfaces 30, 31 in order to allow the flow of a current between the first and second radiation surfaces 30, 31 in the on state.
  • the second radiating surface 31 advantageously has an area small enough to prevent the appearance of spurious radiation and sufficiently large to carry the current from the second connection point to the switches 4.
  • the switches 4 are advantageously electrically connected to the solder balls B.
  • the solder balls B preferably have a diameter of the order of 100 ⁇ m.
  • the two switches 4 are advantageously alternately controlled so that when one of the switches 4 is in the on state, the other switch 4 is in the off state.
  • the transmitted wave And the transmission antenna 3 can be in phase with the wave incident E i or phase shifted by 180 °.
  • the switches 4 are configured to excite the transmission antenna 3 in phase or in phase opposition with the receiving antenna 2.
  • the transition from the off state to the on state is effected by applying a difference of potentials, preferably of the order of 30 V, between the actuation electrode 400 and the membrane 401.
  • the actuation electrode 400 is an electrically conductive material, preferably a metallic material such as Au.
  • the membrane 401 is of an electrically conductive material, preferably a metallic material.
  • the formation of the electromechanical microsystem may require the use of a first sacrificial layer 401a, for example of amorphous silicon, deposited on the actuation electrode 400.
  • the first sacrificial layer 401a is etched locally in order to make an electrical contact for the electrically conductive material of the actuation electrode 400.
  • the elementary cell 1 advantageously comprises an encapsulation layer 40 arranged to encapsulate each electromechanical microsystem, the encapsulation layer 40 being formed monolithically with the corresponding electromechanical microsystem.
  • a second sacrificial layer 401b such as a photosensitive resin, is deposited on the corresponding electromechanical microsystem.
  • a layer 404 of silicon dioxide is deposited on the second sacrificial layer 401b.
  • Orifices are provided in the layer 404 to remove the first and second sacrificial layers 401a, 401b.
  • these orifices are plugged, for example with a polymer material 405, preferably benzocyclobutene.
  • the layer 404 of silicon dioxide and the polymeric material 405 form the encapsulation layer 40.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Variable-Direction Aerials And Aerial Arrays (AREA)
  • Waveguide Aerials (AREA)
EP16181407.4A 2015-07-28 2016-07-27 Grundzelle eines übertragungsnetzes für eine rekonfigurierbare antenne Active EP3125362B1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1557207A FR3039711B1 (fr) 2015-07-28 2015-07-28 Cellule elementaire d'un reseau transmetteur pour une antenne reconfigurable.

Publications (2)

Publication Number Publication Date
EP3125362A1 true EP3125362A1 (de) 2017-02-01
EP3125362B1 EP3125362B1 (de) 2018-05-23

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EP16181407.4A Active EP3125362B1 (de) 2015-07-28 2016-07-27 Grundzelle eines übertragungsnetzes für eine rekonfigurierbare antenne

Country Status (3)

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US (1) US9941592B2 (de)
EP (1) EP3125362B1 (de)
FR (1) FR3039711B1 (de)

Cited By (2)

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Publication number Priority date Publication date Assignee Title
CN109841946A (zh) * 2017-11-27 2019-06-04 松下知识产权经营株式会社 天线装置
EP3840116A1 (de) * 2019-12-18 2021-06-23 Commissariat à l'Energie Atomique et aux Energies Alternatives Rekonfigurierbare antenne mit sendenetz mit monolithischer integration von elementarzellen

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US10177464B2 (en) 2016-05-18 2019-01-08 Ball Aerospace & Technologies Corp. Communications antenna with dual polarization
US10177460B2 (en) 2017-04-24 2019-01-08 Blue Digs LLC Satellite array architecture
US10714829B2 (en) 2017-05-09 2020-07-14 Ball Aerospace & Technologies Corp. Planar phased array antenna
CN111819733B (zh) * 2017-09-22 2022-04-19 杜克大学 用可重构的超表面天线增强的mimo通信***及其使用方法
FR3094138A1 (fr) * 2019-03-19 2020-09-25 Stmicroelectronics (Grenoble 2) Sas Circuits superposés interconnectés
US11419190B2 (en) * 2019-03-20 2022-08-16 Nxp Usa, Inc. RF heating apparatus with re-radiators
US11322684B2 (en) * 2019-08-15 2022-05-03 International Business Machines Corporation Electrically rotatable antennas formed from an optically tunable material
CN110649397B (zh) * 2019-09-27 2021-05-18 中国电子科技集团公司第三十八研究所 一种集成反射阵的可重构平面反射阵天线
RU196050U1 (ru) * 2019-10-04 2020-02-14 Федеральное государственное автономное образовательное учреждение высшего образования "Санкт-Петербургский государственный электротехнический университет "ЛЭТИ" им. В.И. Ульянова (Ленина) Ячейка модульной проходной антенной решетки
FR3104353B1 (fr) 2019-12-05 2021-11-05 Commissariat Energie Atomique Émetteur sans fil réalisant un multiplexage en fréquence de canaux
FR3105612B1 (fr) * 2019-12-18 2023-09-15 Commissariat Energie Atomique Antenne à cavité résonante compacte
US11296424B2 (en) * 2020-01-21 2022-04-05 Rockwell Collins, Inc. Bump mounted radiating element architecture
RU2752282C1 (ru) * 2020-12-04 2021-07-26 Самсунг Электроникс Ко., Лтд. Проходная антенная решетка с бесконтактной структурой и однобитным управлением для формирования многолучевой диаграммы направленности
US20220294112A1 (en) * 2021-02-25 2022-09-15 ST Engineering iDirect, Inc. dba iDirect Unit cell for a reconfigurable antenna
US12021305B1 (en) 2021-06-23 2024-06-25 Bae Systems Space & Mission Systems Inc. Conformal antenna system
FR3125173A1 (fr) * 2021-07-07 2023-01-13 Commissariat A L'energie Atomique Et Aux Energies Alternatives Cellule d’antenne à réseau transmetteur
FR3128592B1 (fr) * 2021-10-26 2023-10-27 Commissariat Energie Atomique Cellule d'antenne à réseau transmetteur ou réflecteur
CN117954845B (zh) * 2024-03-26 2024-06-04 成都核心智慧科技有限公司 一种混合形式的多波束天线

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US4777490A (en) * 1986-04-22 1988-10-11 General Electric Company Monolithic antenna with integral pin diode tuning
US20050035915A1 (en) * 2002-02-06 2005-02-17 Livingston Stan W. Phased array antenna
WO2012085067A1 (fr) 2010-12-24 2012-06-28 Commissariat A L'energie Atomique Et Aux Energies Alternatives Cellule rayonnante a deux etats de phase pour reseau transmetteur
US20120280380A1 (en) * 2011-05-05 2012-11-08 Telesphor Kamgaing High performance glass-based 60 ghz / mm-wave phased array antennas and methods of making same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109841946A (zh) * 2017-11-27 2019-06-04 松下知识产权经营株式会社 天线装置
EP3840116A1 (de) * 2019-12-18 2021-06-23 Commissariat à l'Energie Atomique et aux Energies Alternatives Rekonfigurierbare antenne mit sendenetz mit monolithischer integration von elementarzellen
FR3105610A1 (fr) * 2019-12-18 2021-06-25 Commissariat A L'energie Atomique Et Aux Energies Alternatives Antenne reconfigurable à réseau transmetteur avec intégration monolithique des cellules élémentaires
US11296423B2 (en) 2019-12-18 2022-04-05 Commissariat A L'energie Atomique Et Aux Energies Alternatives Reconfigurable transmitarray antenna with monolithic integration of elementary cells

Also Published As

Publication number Publication date
US20170033462A1 (en) 2017-02-02
EP3125362B1 (de) 2018-05-23
FR3039711A1 (fr) 2017-02-03
FR3039711B1 (fr) 2017-12-29
US9941592B2 (en) 2018-04-10

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