EP2859593A1 - Optical adapter device for light-emitting diodes - Google Patents

Optical adapter device for light-emitting diodes

Info

Publication number
EP2859593A1
EP2859593A1 EP12737868.5A EP12737868A EP2859593A1 EP 2859593 A1 EP2859593 A1 EP 2859593A1 EP 12737868 A EP12737868 A EP 12737868A EP 2859593 A1 EP2859593 A1 EP 2859593A1
Authority
EP
European Patent Office
Prior art keywords
light
emitting diode
matching device
optical
optical matching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12737868.5A
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German (de)
French (fr)
Inventor
Petr Nikolaevich Luskinovich
Vladimir Alexandrovich ZHABOTINSKIY
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Individual
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Individual
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Publication date
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Publication of EP2859593A1 publication Critical patent/EP2859593A1/en
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package

Definitions

  • the invention relates to the field of optical matching devices for LED, G02, which can serve as matching devices in the production of light emitting diodes with increased light output.
  • the invention can be used both for the production of energy-saving lamps as well as high-intensity light emitting diode emitters.
  • Optical matching devices based on a hemisphere of a semiconductor material corresponding to that from which the light-generating region is fabricated, e.g. that of the AL107A infrared light emitting diode and the LED described in HIGH EFFICIENCY LIGHT EMITTING DIODE KR101078063- 2011-10-31.
  • Optical matching devices based on a Weierstrass hemisphere of the same semiconductor material are known, from which also the light-generating region of a type 3L1 15 light-emitting diode consists and also consists
  • the method for increasing the light output is to introduce between the material of the light emitting diode and an optical matching device made of a material having a similar refractive index as the light emitting diode, an additional layer having a low elastic modulus, lower than that of the light emitting diode and the matching device, and a thickness significantly below the wavelength of the light emitted by the light emitting diode, which allows efficient tunneling of the light through the layer.
  • the device for implementing this method consists of a light-emitting diode, in which by tunneling a transparent additional layer with a low elastic modulus and the optical matching device with a refractive index similar to that of the light-emitting diode material is added.
  • the stated objective of preserving the life is achieved by the low value of the modulus of elasticity of the material of the additional layer, which reduces the mechanical stresses which arise between the material of the light-emitting diode and that of the optical matching device due to the difference in the thermal expansion coefficients.
  • the introduction of the additional layer makes it possible to use materials for the optical matching device which have a similarly high refractive index but quite another Have thermal expansion coefficients as the material of the light emitting diode.
  • the stated goal is also achieved by the use of an additive layer with inhomogeneities which reduce the modulus of elasticity of the material.
  • the stated goal of increasing the efficiency is achieved by the use of an additional layer, which is transparent with its thickness (many times lower than the wavelength of the light emitted by the light emitting diode) for the light emitted by the light emitting diode through tunneling.
  • the stated aim of increasing the efficiency is achieved by the use of an additional layer which, with its thickness (many times less than the wavelength of the light emitted by the light emitting diode), is transparent to the light emitted by the light emitting diode through tunneling and filled with nanoparticles whose refractive index comes close to the LED material.
  • the optical matching device is composed of the spherical optical element 1 made of a material having a refractive index similar to that of the material of the light emitting diode and the additive layer 2 having a low elastic modulus, mounted between the spherical matching element and the emitting surface of the light emitting diode.
  • the technology for producing such a device is based on microelectronic
  • Hybrid technologies and consists in the application of only the additional layer and then the optical adjustment device on the surface.
  • an additional layer 2 which consists of the material of the optical adapter or the light emitting diode surface and contains cavities to reduce the transverse stiffness of the material (Figure 3).
  • the method presented here for increasing the efficiency of the optical matching device and the device made on the basis of this principle provide for an increase in the luminous efficacy of the active surface of the light-emitting diode, without reducing the life.

Abstract

The invention relates to a device which is designed as an optical adapter device that consists of a transparent material with an increased refractive index, and comprises a layer between the emitting surface of the semiconductor and said optical adapter device. The latter is produced from a material with a low elastic deformation coefficient, and has a thickness that allows the tunnelling of the emitted light.

Description

OPTISCHE ANPASSUNGSVORRICHTUNG FÜR LEUCHTDIODE  OPTICAL ADJUSTMENT DEVICE FOR LUMINOUS DIODE
Die Erfindung bezieht sich auf das Gebiet der optischen Anpassungsvorrichtungen für LED, G02, die als Anpassungsvorrichtungen bei der Herstellung von Leuchtdioden mit erhöhter Lichtausbeute dienen können. Die Erfindung kann sowohl für die Herstellung von Energiesparlampen als auch von lichtstarken Leuchtdiodenstrahlern benutzt werden. The invention relates to the field of optical matching devices for LED, G02, which can serve as matching devices in the production of light emitting diodes with increased light output. The invention can be used both for the production of energy-saving lamps as well as high-intensity light emitting diode emitters.
Die hohen Brechungsindizes von Halbleitermaterialien - mehr als 2,5 für Siliziumkarbid und 3,3 für Galliumarsenid - sowie die vergleichsweise niedrigen Brechungsindizes der in der Massenproduktion zur Anwendung kommenden Kunststoffmaterialien von 1 ,6 führen zu beträchtlichen Reflektionen des Lichts an der Grenzfläche zwischen dem Halbleiter der LED und dem Kunststoff der optischen Anpassungsvorrichtung. Die Anwendung von Materialien mit hohem Brechnungsindex wie Chalkogenidgläsern u. ä. für optische Anpassungsvorrichtungen ist in den meisten Fällen nicht möglich, da sich die linearen Wärmeausdehnungskoeffizienten zu stark unterschieden, was zur Entstehung zusätzlicher Spannungen und einer Verkürzung der Lebensdauer der Leuchtdiode führt. Bekannt sind optische Anpassungsvorrichtungen auf der Grundlage einer Halbkugel aus einem Halbleitermaterial, das dem entspricht, aus dem der lichtgenerierende Bereich gefertigt wird, z.B. derjenige der Infrarot-Leuchtdiode AL107A und der Leuchtdiode, die im Patent HIGH EFFICIENCY LIGHT EMITTING DIODE KR101078063- 2011-10-31 beschrieben wird.  The high indices of refraction of semiconductor materials - more than 2.5 for silicon carbide and 3.3 for gallium arsenide - as well as the comparatively low refractive indices of the plastic materials used in mass production of 1, 6 lead to considerable reflections of the light at the interface between the semiconductor LED and the plastic of the optical adapter. The use of materials with a high refractive index such as chalcogenide glasses u. Ä. For optical matching devices is not possible in most cases, since the linear thermal expansion coefficients differ too much, which leads to the emergence of additional voltages and a shortening of the life of the light emitting diode. Optical matching devices based on a hemisphere of a semiconductor material corresponding to that from which the light-generating region is fabricated, e.g. that of the AL107A infrared light emitting diode and the LED described in HIGH EFFICIENCY LIGHT EMITTING DIODE KR101078063- 2011-10-31.
Bekannt sind optische Anpassungsvorrichtungen auf der Grundlage einer Weierstrassschen Halbkugel aus demselben Halbleitermaterial, aus dem auch der lichtgenerierende Bereich einer Leuchtdiode vom Typ 3L1 15 besteht und auch aus Optical matching devices based on a Weierstrass hemisphere of the same semiconductor material are known, from which also the light-generating region of a type 3L1 15 light-emitting diode consists and also consists
(54) Title: HIGH EFFICIENCY LED WITH MULTI-LAYER REFLECTOR STRUCTURE AND METHOD FOR FABRICATING THE SAME (10) International Publication Number  (54) Title: HIGH EFFICIENCY LED WITH MULTI-LAYER REFLECTOR STRUCTURE AND METHOD FOR FABRICATING THE SAME (10) International Publication Number
WO 2007/123289 AI  WO 2007/123289 AI
Bei dieser Konstruktion ist der Wärmeausdehnungskoeffizient des Materials der Leuchtdiode und der optischen Anpassungsvorrichtung gleich, was für eine hohe Lichtausbeute und Lebensdauer sorgt. Nachteil dieser Konstruktion ist die  With this construction, the coefficient of thermal expansion of the material of the light emitting diode and the optical matching device is the same, which provides high light output and lifetime. Disadvantage of this construction is the
BESTÄTIGUNGSKOPIE Vervielfachung des Halbleiterverbrauchs und die entsprechende Verteuerung der Leuchtdiode. CONFIRMATION COPY Multiplication of the semiconductor consumption and the corresponding increase in price of the light-emitting diode.
Bekannt sind optische Anpassungsvorrichtungen auf Kunststoffbasis, in denen die aus dem Halbleiter abgegebene Strahlung durch die kuppeiförmige Bedeckung an die Umgebung abgegeben wird  Are known plastic optical adjustment devices in which the radiation emitted from the semiconductor radiation is discharged through the dome-shaped covering to the environment
(54) Title: LIGHT EMITTING DIODE LIGHT ENGINE (54) Title: LIGHT EMITTING DIODE LIGHT ENGINE
WO 2011/002508 A2  WO 2011/002508 A2
Nachteil dieser Konstruktion ist die niedrige Lichtausbeute auf Grund der grossen Differenz zwischen dem Brechungsindex des Halbleiters der Leuchtdiode und dem des Kunststoffes der optischen Anpassungsvorrichtung. Disadvantage of this construction is the low light yield due to the large difference between the refractive index of the semiconductor of the light emitting diode and that of the plastic of the optical matching device.
Das hier zur Anmeldung als Erfindung vorgestellte Verfahren zur Erhöhung der Lichtausbeute sowie die zu dessen Verwirklichung nötige optische Anpassungsvorrichtung zielen darauf, die Effizienz der Umwandlung der elektrischen Energie in Licht bei gleich bleibender Lebensdauer zu steigern.  The method for increasing the luminous efficacy presented here as an invention as well as the optical matching device necessary for its realization aim at increasing the efficiency of the conversion of the electrical energy into light while maintaining a constant service life.
Das Verfahren zur Erhöhung der Lichtausbeute besteht darin, zwischen das Material der Leuchtdiode und eine optische Anpassungsvorrichtung aus einem Material mit einem ähnlichen Brechungsindex wie die Leuchtdiode eine zusätzliche Schicht einzubringen, die ein niedriges Elastizitätsmodul hat, niedriger als das von Leuchtdiode und Anpassungsvorrichtung, und eine Dicke deutlich unter der Wellenlänge des von der Leuchtdiode ausgestrahlten Lichts, welche eine effiziente Tunnelung des Lichts durch die Schicht ermöglicht.  The method for increasing the light output is to introduce between the material of the light emitting diode and an optical matching device made of a material having a similar refractive index as the light emitting diode, an additional layer having a low elastic modulus, lower than that of the light emitting diode and the matching device, and a thickness significantly below the wavelength of the light emitted by the light emitting diode, which allows efficient tunneling of the light through the layer.
Die Vorrichtung zur Umsetzung dieses Verfahrens besteht aus einer Leuchtdiode, in die durch Tunnelung eine durchsichtige Zusatzschicht mit niedrigem Elastizitätsmodul sowie der optischen Anpassungsvorrichtung mit einem Brechungsindex ähnlich dem des Leuchtdiodenmaterials zugesetzt wird.  The device for implementing this method consists of a light-emitting diode, in which by tunneling a transparent additional layer with a low elastic modulus and the optical matching device with a refractive index similar to that of the light-emitting diode material is added.
Das angegebene Ziel der Bewahrung der Lebensdauer wird durch den niedrigen Wert des Elastizitätsmoduls des Materials der Zusatzschicht erreicht, das die mechanischen Spannungen verringert, die zwischen dem Material der Leuchtdiode und dem der optischen Anpassungsvorrichtung auf Grund der Differenz der Wärmeausdehnungskoeffizienten entstehen. Durch die Einführung der Zusatzschicht wird es möglich, für die optische Anpassungsvorrichtung Materialien zu verwenden, die einen ähnlich hohen Brechungsindex, aber einen ganz anderen Wärmeausdehnungskoeffizienten als das Material der Leuchtdiode haben. The stated objective of preserving the life is achieved by the low value of the modulus of elasticity of the material of the additional layer, which reduces the mechanical stresses which arise between the material of the light-emitting diode and that of the optical matching device due to the difference in the thermal expansion coefficients. The introduction of the additional layer makes it possible to use materials for the optical matching device which have a similarly high refractive index but quite another Have thermal expansion coefficients as the material of the light emitting diode.
Das angegebene Ziel wird auch erreicht durch die Verwendung einer Zusatzschicht mit Inhomogenitäten, die das Elastizitätsmodul des Materials reduzieren. The stated goal is also achieved by the use of an additive layer with inhomogeneities which reduce the modulus of elasticity of the material.
Das angegebene Ziel der Effizienzsteigerung wird erreicht durch die Verwendung einer Zusatzschicht, welche mit ihrer Dicke (um ein Vielfaches geringer als die Wellenlänge des von der Leuchtdiode ausgestrahlten Lichts) für das von der Leuchtdiode ausgestrahlte Licht durch Tunnelung durchsichtig ist.  The stated goal of increasing the efficiency is achieved by the use of an additional layer, which is transparent with its thickness (many times lower than the wavelength of the light emitted by the light emitting diode) for the light emitted by the light emitting diode through tunneling.
Das angegebene Ziel der Effizienzsteigerung wird erreicht durch die Verwendung einer Zusatzschicht, welche mit ihrer Dicke (um ein Vielfaches geringer als die Wellenlänge des von der Leuchtdiode ausgestrahlten Lichts) für das von der Leuchtdiode ausgestrahlte Licht durch Tunnelung durchsichtig ist und angefüllt mit Nanoteilchen, deren Brechungsindex dem des Leuchtdiodenmaterials nahe kommt.  The stated aim of increasing the efficiency is achieved by the use of an additional layer which, with its thickness (many times less than the wavelength of the light emitted by the light emitting diode), is transparent to the light emitted by the light emitting diode through tunneling and filled with nanoparticles whose refractive index comes close to the LED material.
Das Prinzip des vorgeschlagenen Verfahrens und der zu seiner Umsetzung nötigen The principle of the proposed procedure and its implementation
Vorrichtung erklärt sich an Hand des Realisierungsbeispiels und der Zeichnung 1 , auf welcher das Prinzip schematisch dargestellt ist (in Schnitt und Draufsicht). Device can be explained with reference to the implementation example and the drawing 1, on which the principle is shown schematically (in section and plan view).
Die optische Anpassungsvorrichtung besteht aus dem kugelförmigen optischen Element 1 aus einem Material mit einem Brechungsindex ähnlich dem des Materials der Leuchtdiode und der Zusatzschicht 2 mit einem niedrigen Elastizitätsmodul, angebracht zwischen dem kugelförmigen Anpassungselement und der Abstrahlfläche der Leuchtdiode.  The optical matching device is composed of the spherical optical element 1 made of a material having a refractive index similar to that of the material of the light emitting diode and the additive layer 2 having a low elastic modulus, mounted between the spherical matching element and the emitting surface of the light emitting diode.
Die Technologie zur Herstellung einer solchen Vorrichtung basiert auf mikroelektronischen The technology for producing such a device is based on microelectronic
Hybridtechnologien und besteht in der Auftragung erst der Zusatzschicht und danach der optischen Anpassungsvorrichtung auf der Oberfläche. Hybrid technologies and consists in the application of only the additional layer and then the optical adjustment device on the surface.
Zulässig ist die Verwendung einer Zusatzschicht 2, welche Nanoteilchen mit einem Brechungsindex ähnlich dem des Materials 3 der Leuchtdiode (Zeichnung 2) enthält.  Permitted is the use of an additional layer 2, which contains nanoparticles with a refractive index similar to that of the material 3 of the light emitting diode (Figure 2).
Zulässig ist auch die Verwendung einer Zusatzschicht 2, welche aus dem Material der optischen Anpassungsvorrichtung oder dem der Leuchtdiodenoberfläche besteht und Hohlräume enthält, um die Quersteifigkeit des Materials zu verringern (Zeichnung 3). Also permissible is the use of an additional layer 2, which consists of the material of the optical adapter or the light emitting diode surface and contains cavities to reduce the transverse stiffness of the material (Figure 3).
Auf diese Weise sorgen das hier vorgestellte Verfahren zur Erhöhung der Effizienz der optischen Anpassungsvorrichtung und die auf der Grundlage dieses Prinzip hergestellte Vorrichtung für eine Erhöhung der Lichtausbeute von der aktiven Fläche der Leuchtdiode, ohne die Lebensdauer herabzusetzen. In this way, the method presented here for increasing the efficiency of the optical matching device and the device made on the basis of this principle provide for an increase in the luminous efficacy of the active surface of the light-emitting diode, without reducing the life.

Claims

Patentansprüche claims
. Verfahren zur Steigerung der Effizienz der optische Anpassungsvorrichtung einer Leuchtdiode, welches darin besteht, zwischen die Abstrahlfläche der Leuchtdiode und die optische Anpassungsvorrichtung eine zusätzliche Schicht einzubringen, die ein niedriges Elastizitätsmodul hat und durch Tunnelung für das von der , A method for increasing the efficiency of the optical matching device of a light-emitting diode, which consists in introducing an additional layer between the emitting surface of the light-emitting diode and the optical matching device, which has a low modulus of elasticity and by tunneling for that of the
Leuchtdiode ausgestrahlte Licht durchsichtig ist.  LED light emitted is transparent.
2. Vorrichtung zur Umsetzung des Verfahrens als optische Anpassungsvorrichtung aus einem durchsichtigen Material mit erhöhtem Brechungsindex mit Schicht 2. Device for implementing the method as an optical adjustment device made of a transparent material with increased refractive index with layer
zwischen der Abstrahlfläche des Halbleiters und der optischen between the emitting surface of the semiconductor and the optical
Anpassungsvorrichtung, welche aus einem Material mit niedrigem elastischem Adaptation device, which consists of a material with low elastic
Deformationskoeffizienten hergestellt ist und eine Dicke hat, die das Durchtunneln des abgestrahlten Lichts ermöglicht. Deformation coefficient is made and has a thickness that allows tunneling through the radiated light.
3. Optische Anpassungsvorrichtung einer Leuchtdiode nach Anspruch 2, dadurch gekennzeichnet, dass die Schicht der optischen Anpassungsvorrichtung zwischen der Abstrahlfläche des Halbleiters und der optischen Anpassungsvorrichtung aus einem Material mit geringer elastischer Verformung besteht, in das Nanoteilchen kleiner als die effektive Wellenlänge des durchgelassenen Lichts und mit einem Brechungsindex grösser als der Brechungsindex des elastischen Materials eingelassen sind. 3. An optical matching device of a light emitting diode according to claim 2, characterized in that the layer of the optical matching device between the emitting surface of the semiconductor and the optical matching device consists of a material with low elastic deformation, in the nanoparticles smaller than the effective wavelength of the transmitted light and a refractive index greater than the refractive index of the elastic material are embedded.
4. Optische Anpassungsvorrichtung einer Leuchtdiode nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass die Schicht der optischen Anpassungsvorrichtung mit der Abstrahlfläche des Halbleiters verbunden und aus einem Material mit Nano- und Mikroleerräumen verfertigt ist. 4. An optical matching device of a light-emitting diode according to claim 1 or 2, characterized in that the layer of the optical matching device is connected to the emitting surface of the semiconductor and made of a material with nano and Mikroleerräumen.
EP12737868.5A 2012-06-11 2012-06-11 Optical adapter device for light-emitting diodes Withdrawn EP2859593A1 (en)

Applications Claiming Priority (1)

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PCT/IB2012/001126 WO2013108067A1 (en) 2012-06-11 2012-06-11 Optical adapter device for light-emitting diodes

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EP2859593A1 true EP2859593A1 (en) 2015-04-15

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EP (1) EP2859593A1 (en)
RU (1) RU2565324C2 (en)
WO (1) WO2013108067A1 (en)

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US20160315234A1 (en) 2016-10-27
RU2013139012A (en) 2015-02-27
US20150311412A1 (en) 2015-10-29
RU2565324C2 (en) 2015-10-20
WO2013108067A1 (en) 2013-07-25

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