Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J45/00—Discharge tubes functioning as thermionic generators
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
  • H01J1/46—Control electrodes, e.g. grid; Auxiliary electrodes
  • H01J1/48—Control electrodes, e.g. grid; Auxiliary electrodes characterised by the material
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J19/00—Details of vacuum tubes of the types covered by group H01J21/00
  • H01J19/28—Non-electron-emitting electrodes; Screens
  • H01J19/38—Control electrodes, e.g. grid
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J21/00—Vacuum tubes
  • H01J21/02—Tubes with a single discharge path
  • H01J21/06—Tubes with a single discharge path having electrostatic control means only
  • H01J21/10—Tubes with a single discharge path having electrostatic control means only with one or more immovable internal control electrodes, e.g. triode, pentode, octode
  • H01J21/105—Tubes with a single discharge path having electrostatic control means only with one or more immovable internal control electrodes, e.g. triode, pentode, octode with microengineered cathode and control electrodes, e.g. Spindt-type
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
  • H01J3/02—Electron guns
  • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
  • H01J3/02—Electron guns
  • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
  • H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B82—NANOTECHNOLOGY
  • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
  • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/0001—Technical content checked by a classifier
  • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

• Electronic devices vary in structure and design, but invariably involve control of a flow of charged carriers (e.g., electrons or ions) between electrodes (i.e., an anode and a cathode).
• the flow of charged carriers may be a result of thermionic emission, which is the heat-induced flow of charge carriers from a surface or over a potential-energy barrier, from one of the electrodes. This emission occurs because the thermal energy given to the carrier overcomes the binding potential, also known as work function of the electrode.
• a classical example of thermionic emission is the emission of electrons from a hot cathode, into a vacuum (also known as the Edison effect) in a vacuum tube.
• the hot cathode can be a metal filament, a coated metal filament, or a separate structure of metal or carbides or borides of transition metals.
• the electronic devices may also exploit other physics phenomena (e.g., field electron emission or photoelectric emission) to produce the flow of charged carriers between the anode and the cathode.
• a vacuum tube device in addition to the anode and cathode electrodes, can include one or more active electrodes (or grids) that influence the flow electrons in the device.
• Vacuum tube devices that include three, four, five and six electrodes, etc. are suggestively called triodes, tetrodes, pentodes, hexodes, etc.
• the grids in these devices can have different functions. For example, a voltage applied to a control grid that is ordinarily placed between the cathode and the anode of an electron tube serves to vary the flow of current.
• a screen grid that is ordinarily placed between the control grid and the anode acts as an electrostatic shield to protect the control grid from the influence of the anode when its potential changes.
• a suppressor grid that is ordinarily interposed between the screen grid and the anode acts as an electrostatic shield to suppress secondary emission from the anode.
• a device in one general aspect, includes an anode, a cathode, and a grid made of graphene material.
• the device may be micro or nano-electronic device.
• the grid may be configured to modulate a flow of electrons from the cathode to anode.
• a method for configuring a multi-electrode electronic device includes providing an anode, providing a cathode and providing a grid that is made of graphene material to modulate a flow of electrons from the cathode to anode.
• the method may include disposing the anode, the cathode and the grid in a vacuum- holding container to form the electronic device.
• FIG. 1 is a schematic illustration of an exemplary multi-electrode electronic device, in accordance with the principles of the disclosure herein.
• FIG. 2 is a schematic illustration of an example device in which a grid electrode made of graphene materials is disposed proximate to an anode or cathode electrode, in accordance with the principles of the disclosure herein.
• FIG. 3 is a schematic illustration of an example graphene sheet in which carbon atoms have been removed to form holes or apertures through which charge carriers may flow uninterrupted, in accordance with the principles of the disclosure herein.
• FIG. 4 is a schematic illustration of an example graphene electrode disposed above an electrode having field emitter tip array such that holes in the graphene electrode are aligned with field emitter tip array, in accordance with the principles of the disclosure herein.
• FIG. 5 is a schematic illustration of an example configuration of a grid electrode made of graphene material that is supported over an underlying electrode by an
• FIG. 6. is a flowchart illustrating an example method for configuring a multi- electrode electronic device (e.g., microelectronic or nanoelectronic device), in accordance with the principles of the disclosure herein.
• a multi- electrode electronic device e.g., microelectronic or nanoelectronic device
• FIG. 7 is a schematic illustration of an example arrangement of a pair of electrodes, which may be used in an electronic device, in accordance with the principles of the disclosure herein.
• FIG. 8 is a flowchart illustrating an example method for configuring a multi- electrode electronic device, in accordance with the principles of the disclosure herein.
• one or more grid electrodes of a multi-electrode electronic device are made from graphene materials.
• FIG. 1 shows an example multi-electrode electronic device 100, in accordance with the principles of the disclosure herein.
• Multi-electrode electronic device 100 may, for example, be a microelectronic or a nanoelectronic device.
• Multi-electrode device 100 may include an anode 110, a cathode 120 and one or more grid electrodes (e.g., grids 112-116).
• Multi-electrode device 100 may be configured, for example, depending on the number and configuration of the grid electrodes therein, to operate as a triode, a tetrode, a pentode or other type of electronic device.
• multi-electrode device 100 maybe configured to operate as a field emission device that is shown and described in U.S. Patent Application S/N 13/374,545.
• cathode refers to an electron emitter and the term anode refers to an electron receiver.
• the cathode and the anode may each act as an electron emitter or an electron receiver and therefore the terms anode and cathode may be understood by context herein.
• a charged carrier flow may be established in multi-electrode device 100 between anode 110 and cathode 120.
• Anode 110 and/or cathode 120 surfaces may include field enhancement structures (e.g., field emitter tips, ridges, carbon nanotubes, etc.)
• the charged carrier flow between anode 110 and cathode 120 may be controlled or otherwise influenced by the grid electrodes (e.g., grids 112-116).
• grids 112-116 may act, for example, as a control grid, a screening grid and a suppressor grid.
• the grid electrodes may control (i.e. modulate) the amount of the charged carrier flow between anode 110 and cathode 120 in the same manner as homonym grids control the charged carrier flow in traditional vacuum tubes by modifying the electrical potential profile or electrical field in the direction of the charged carrier flow between anode and cathode under appropriate biasing voltages.
• a positive bias voltage applied to a grid may, for example, accelerate electrons across the gap between anode 110 and cathode 120.
• a negative positive bias voltage applied to a grid may decelerate electrons and reduce or stop the charged carrier flow between anode 110 and cathode 120.
• the vacuum-tube-like grid electrodes herein may be distinguished from ion or electron beam extraction electrodes (e.g., used in ion or electron beam sources) and electrodes of electrostatic lens structures that are used for collimating or focusing ion or electron beams (e.g., in electron beam microscopes and ion implanters).
• Multi-electrode device 100 may be encased in container 130, which may isolate anode 110, cathode 120 and the one or more grid electrodes in a controlled environment (e.g., a vacuum or gas-filled region).
• the gas used to fill container 130 may include one or more atomic or molecular species, partially ionized plasmas, fully ionized plasmas, or mixtures thereof.
• a gas composition and pressure in container 130 may be chosen to be conducive to the passage of charged carrier flow between anode 110 and cathode 120.
• the gas composition, pressure, and ionization state in container 130 maybe chosen to be conducive to the neutralization of space charges for charged carrier flow between anode 110 and cathode 120.
• the gas pressure in container 110 may, as in conventional vacuum tube devices, be substantially below atmospheric pressure.
• the gas pressure may be sufficiently low, so that the combination of low gas density and small inter-component separations reduces the likelihood of gas interactions with transiting electrons to low enough levels such that a gas-filled device offers vacuum-like performance
• one or more of the electrodes (e.g., electrodes 112-116) in multi-electrode device 100 maybe made of graphene materials.
• the graphene materials used as electrode material may be substantially transparent to the flow of charged carriers between anode 110 and cathode 120 in device operation.
• Multi-electrode device 100 may include at least one control grid configured to modulate a flow of electrons from the cathode to anode. Additionally or alternatively, multi-electrode device 100 may include at least one screen grid configured to reduce parasitic capacitance and oscillations.
• the control grid and/or the screen grid may be made of graphene material.
• FIG. 2 shows an example device 200 (which may be a version of multi-electrode device 100) having two electrodes 210 and 240 (e.g., cathode and anode) and a grid electrode 250 disposed proximate to one of the electrodes (e.g., electrode 210).
• Grid electrode 250 may incorporate graphene materials which are substantially transparent to a flow of electrons between electrodes 210 and 240.
• the electrons flow between electrodes 210 and 240 may include electrons having energies, for example, of up to about 100 eV.
• Grid electrode 250 may, for example, be a control grid configured to modulate a flow of electrons from the cathode to anode.
• the control grid may be disposed sufficiently close to electrode 210 to induce or suppress electron emission from electrode 210 when a suitable electric potential is applied to the grid in device operation.
• Graphene is an allotrope of carbon having a structure of one-atom-thick planar sheets of sp -bonded carbon atoms that are densely packed in a honeycomb crystal lattice, as shown, for example, in the inset in FIG. 2.
• the graphene materials may be in the form of sheets or ribbons and may include unilayer, bilayer or other forms of graphene.
• the graphene material of the control grid (e.g., grid electrode 250) may include a graphene sheet having an area of more than 0.1 um .
• a version of device 200 may have at least one relatively smooth planar anode or cathode surface over which graphene grid electrode 250 may be supported by a sparse array of conducting posts or walls.
• the conducting posts or walls may terminate on but are electrically isolated from the underlying anode or cathode.
• Grid electrode 250 may be formed, for example, by suspending free- standing graphene materials supported by scaffolding 220 over electrode 210.
• the smooth planar anode or cathode surface over which graphene grid electrode 250 may be supported may be a surface that is substantially planar on a micro- or nanometer scale.
• a separation distance between the graphene material and the planar surface may be less than about 1 um. In some experimental investigations of suspended graphene sheets, a separation distance between the graphene material and the planar surface is about 0.3 um. In some device applications, the separation distance between the graphene material and the planar surface may be less than about 0.1 um.
• Scaffolding 220 may be configured to physically support the graphene material of grid electrode 250 over the planar surface of electrode 210.
• Scaffolding 220 may, for example, include an array of spacers or support posts.
• the spacers or support posts which may include one or more of dielectrics, oxides, polymers, insulators and glassy material, may be electrically isolated from the planar surface of electrode 210.
• Graphene which has a local hexagonal carbon ring structure, may have a high transmission probability for electrons through the hexagonal openings in its structure.
• electronic bandgaps in the graphene materials used for grid 250 may be suitably modified (e.g., by doping or functionalizing) to reduce or avoid inelastic electron scattering of incident electrons that may pass close to a carbon atom in the graphene structure.
• the doping and functionalizing techniques that are used to create or modify electronic bandgaps in the graphene materials may be the same or similar to techniques that are described, for example, in Beidou Guo et al. Graphene Doping: A Review, J. Insciences. 2011, 1(2), 80-89, and in D.W. Boukhvalov et al. Chemical functionalization of graphene, J. Phys.: Condens. Matter 21 344205.
• both of the foregoing references are incorporated by reference in their entireties herein.
• the transmission probability of incident electrons from vacuum through graphene may be approximated as a quantum tunneling process through a model finite square potential well.
• the model potential well width may be set equal to the single-atom thickness of a graphene sheet ⁇ 0.3 nm, while the potential well depth may be
• any effects of electron- electron scattering on the transparency of the graphene materials may be avoided or mitigated by bandgap engineering of the graphene materials used to make grid 250.
• Typical electric transition energies in raw or undoped graphene materials may be about 100 meV around the Dirac point. However, the electric transition energies may be expected to increase up to about 10 eV under very strong electric fields that may be applied in operation of device 200. Moreover, a concentration of induced charge carriers in graphene may be dependent on the external electric field with the proportionality between the induced charge carriers and the applied electric field of about 0.055 electrons/nm per
• the graphene materials used for an electrode may have holes or apertures formed therein to permit through passage of a flow of charged carriers between anode 110 and cathode 120 in device operation.
• the holes which may be larger than a basic hexagon carbon ring or unit of graphene's atomic structure, may be formed by removing carbon atoms from a graphene sheet or ribbon.
• FIG. 3 shows schematically a graphene sheet 300 in which carbon atoms have been removed to form holes or apertures 310 through which charge carriers may flow uninterrupted.
• Holes or apertures 310 may be physically formed by processing graphene using any suitable technique including, for example, electron beam exposure, ion beam drilling, copolymer block lithography, diblock copolymer templating, and/or surface-assisted polymer synthesis.
• Any suitable technique including, for example, electron beam exposure, ion beam drilling, copolymer block lithography, diblock copolymer templating, and/or surface-assisted polymer synthesis.
• the named techniques are variously described, for example, in S. Garaj et al. Graphene as a subnanometre trans- electrode membrane, Nature 467, 190-193, (09 September 2010); Kim et al. Fabrication and Characterization of Large-Area, Semiconducting Nanoperforated Graphene
• nano-photolithographic and etching techniques may be used to create a pattern of holes in the graphene materials used as an electrode.
• graphene deposited on a substrate may be patterned by nanoimprint lithography to create rows of highly curved regions, which are then etched away to create an array of very small holes in the graphene material.
• the process may exploit the enhanced reactivity of carbon atoms along a fold or curve in the graphene material to preferentially create holes at the curved regions.
• a graphene sheet used for a proximate grid electrode may be mechanically placed on the array of field tips. Such placement may be expected to locally curve or mechanically stress the graphene sheet, which after etching may result in apertures or holes that are automatically aligned with the field emitter tips.
• FIG. 4 shows an example graphene electrode 420 disposed above an electrode 410 having a field emitter tip array 412. Holes 422 formed in graphene electrode 420 are shown as being aligned with field emitter tip array 412. Holes 422 maybe created by a self-aligning process of placing a graphene sheet over electrode 410 in mechanical contact with field emitter tip array 412 and etching the graphene regions stressed by mechanical contact with the field emitter tips.
• the graphene material used for making a grid electrode includes a graphene sheet with physical pores formed by carbon atoms removed therein.
• a size distribution of the physical pores may be selected upon consideration of device design parameters.
• the pores may have cross-sectional areas, for example, in a range of about 1 nm 2 - 100 nm 2 or 100 nm 2 - 1000 nm 2.
• the foregoing example grid electrodes made of graphene materials (e.g., electrodes 250, and 420) maybe separated from the underlying electrode (e.g., electrodes 210 and 410) by a vacuum or gas-filled gap.
• a grid electrode made of graphene materials may be separated from the underlying electrode by a dielectric spacer layer.
• FIG. 5 shows an example configuration 500 of a grid electrode 520 made of graphene material that is separated from an underlying electrode 510 by a dielectric spacer layer 530.
• dielectric spacer layer 530 may, for example, be of the order of a few nanometers thick. Further, like the graphene electrodes discussed in the foregoing, dielectric spacer layer 530 may be a continuous layer or may be a porous layer with holes or apertures (e.g., hole 532) formed in it.
• the holes of apertures 532 in dielectric spacer layer 530 maybe formed, for example, by etching the dielectric material through holes or apertures (e.g., holes 310) in grid electrode 520. In such case, holes of apertures 532 in dielectric spacer layer 530 may form vacuum or gas-filled gaps between electrode s 510 and 520.
• graphene material of a control grid may be supported by an intervening dielectric material layer disposed on the planar surface of the underlying electrode.
• the intervening dielectric material layer may be configured to allow tunneling or transmission of the electron flow therethrough. Further, the intervening dielectric material layer may be partially etched to form a porous structure to support the graphene grid over the underlying electrode.
• FIG. 6 shows an example method 600 for configuring a multi-electrode electronic device (e.g., a microelectronic or nanoelectronic device).
• Method 600 includes providing an anode (610), providing a cathode (620) and providing a control grid that is made of graphene material to modulate a flow of electrons from the cathode to anode (630).
• Method 600 may include disposing the anode, the cathode and the control grid in a vacuum-holding container to form the electronic device (640).
• providing a control grid that is made of graphene material to modulate a flow of electrons from the cathode to anode 630 may include disposing the control grid sufficiently close to the cathode (or anode) to induce or suppress electron emission from the cathode (or anode) when an electric potential is applied to the grid in device operation.
• the graphene material may include unilayer and/or bilayer graphene.
• the graphene material of the control grid may include a graphene sheet having an area of more than 0.1 um .
• the graphene material of the control grid may be substantially transparent to the flow electrons from the cathode to the anode.
• the graphene material of the control grid may, for example, include a graphene sheet with physical holes or pores formed therein. The pores may have cross-sectional areas in a range of about
• the pores in the graphene sheet may be formed lithographically, formed by copolymer block lithography, and/or by electron-beam or ion-beam drilling.
• the pores in the graphene sheet may be aligned with field emitter tips on the anode.
• At least one of the anode and the cathode may have a substantially planar surface on a micro- or nanometer scale.
• Providing a control grid that is made of graphene material to modulate a flow of electrons from the cathode to anode 630 may include disposing the graphene material of the control grid over the planar surface.
• a separation distance between the graphene material and the planar surface may be less than about 1 um. In some experimental investigations of suspended graphene sheets, a separation distance between the graphene material and the planar surface is about 0.3 um. In some device applications, the separation distance between the graphene material and the planar surface may be less than about 0.1 um.
• Method 600 may further include providing a scaffolding configured to physically support the graphene material of the control grid over the planar surface (650).
• the scaffolding may include an array of spacers or support posts, which are electrically isolated from the planar surface.
• the spacers or support posts may be made from one or more of dielectrics, oxides, polymers, insulators and glassy material.
• Method 600 may further include providing an intervening dielectric material layer disposed on the planar surface to support the graphene material of the control grid (660).
• the intervening dielectric material layer may be configured to allow tunneling or transmission of the electron flow therethrough.
• the intervening dielectric material layer may be partially etched to form a porous structure to support the graphene grid.
• FIG. 7 shows an example arrangement 700 of a pair of electrodes (e.g., first electrode 710 and second electrode 720), which may be used in an electronic device.
• the pair of electrodes 710 and 720 may be disposed in a vacuum-holding container (e.g., container 130, FIG. 1).
• Second electrode 720 may be disposed in close proximity to first electrode 710 and configured to modulate or change an energy barrier to a flow of electrons through the surface of first electrode 710.
• second electrode 720 may be disposed in the vacuum-holing container and configured to modulate a flow of electrons through the second electrode itself (e.g., by controlling space charge in the vacuum-holding container).
• Second electrode 720 may be made of a 2-d layered material including one or more of graphene, graphyne, graphdiyne, a two-dimensional carbon allotrope, and a two- dimensional semimetal material.
• the 2-d layered material may have an electron transmission probability for 1 eV electrons that exceeds 0.25 and/or an electron transmission probability for 10 eV electrons that exceeds 0.5.
• the 2-d layered material of which the second electrode is made may have an electronic bandgap therein, for example, to permit transmission of the electron flow therethrough in operation of device.
• the 2-d layered material may, for example, be doped graphene material or functionalized graphene material.
• Second electrode 720 may be disposed next to a surface of first electrode 710 so that it is separated by a vacuum gap from at least a portion of the surface of first electrode 710.
• second electrode 720 may be disposed next to the surface of first electrode 710 supported by a dielectric material layer 730 disposed over the surface of first electrode 710.
• Dielectric material layer 730 disposed over the surface of first electrode 710 may be about 0.3 nm - 10 nm thick in some applications. In other applications, dielectric material layer 730 may be greater than 10 nm thick.
• Dielectric material layer 730 disposed over the surface of first electrode 710 may be a continuous dielectric material layer which is configured to allow tunneling or transmission therethrough of substantially all electron flow to and from the first electrode in device operation.
• Dielectric material layer 730 may, for example, be a porous dielectric material layer configured to permit formation of vacuum gaps between first electrode 710 and second electrode 720.
• the 2d- layer material of second electrode 720 may have pores therein permitting chemical etching therethrough to remove portions of delectric material layer 730 to form, for example, the vacuum gaps.
• FIG. 8 shows an example method 800 for configuring a multi-electrode electronic device (e.g., a microelectronic or nanoelectronic device).
• Method 800 includes providing a first electrode in a vacuum-holding container of the electronic device (810), and providing a second electrode next to a surface of the first electrode (820).
• the second electrode may be made of a 2-d layered material including one or more of graphene, graphyne, graphdiyne, a two-dimensional carbon allotrope, and a two-dimensional semimetal material, and configured to change an energy potential profile to modulate a flow of electrons through the surface of the first electrode, wherein the second electrode is configured to change an energy potential profile to modulate a flow of electrons through a surface of the first electrode and/or the second electrode itself.
• providing a second electrode made of a 2-d layered material 820 may include using a 2-d layered material having an electron transmission probability that for 1 eV electrons exceeds 0.25 and/or an electron transmission probability that for 10 eV electrons exceeds 0.5. Further, providing a second electrode made of a 2-d layered material 820 may include using a 2-d layered material that has an electronic bandgap therein. Method 800 may include selecting the electronic bandgap of the 2-d layered material so as to permit transmission of or forbid the electron flow therethrough based on the electron energy in operation of the electronic device.
• the 2-d layered material having an electronic band gap may be doped graphene material and/or functionalized graphene material.
• disposing a second electrode made of a 2-d layered material next to a surface of the first electrode may include forming a vacuum gap between the 2-d layered material and the surface of the first electrode.
• Disposing a second electrode made of a 2-d layered material next to a surface of the first electrode 820 may include disposing a dielectric material layer to support the 2-d layered material over the surface of the first electrode.
• the dielectric material layer may be about 0.3 nm - 10 nm thick. In other applications, the dielectric material layer may, for example, be greater than about 10 nm thick.
• disposing a dielectric material layer to support the 2-d layered material over the surface of the first electrode may include disposing a continuous dielectric material layer, which is configured to allow transmission of substantially all of the electron flow therethrough to and from the first electrode in operation of the electronic device.
• Method 800 may include removing portions of the dielectric material layer away to permit formation of vacuum gaps between the first electrode and the 2-d layered material of the second electrode.
• the 2-d layered material may have pores therein, and removing portions of the dielectric material layer involve chemically etching the portions of the dielectric material through the pores in the 2-d layered material.
• the dimensions and materials of the devices described herein may be selected for device operation with grid and anode voltages relative to the cathode in suitable ranges.
• the dimensions and materials of a device may be selected for device operation with grid and anode voltages relative to the cathode, for example, in the range of 0 to 20 volts.
• the dimensions and materials of a device may be selected for device operation with grid and anode voltages relative to the cathode, for example, in the range of 0 to 40 volts.
• the dimensions and materials of a device may be selected for device operation with grid and anode voltages relative to the cathode, for example, in the range of 0 to 100 volts.

Landscapes

• Cold Cathode And The Manufacture (AREA)
• Hybrid Cells (AREA)
• Carbon And Carbon Compounds (AREA)
• Electron Beam Exposure (AREA)
• Ignition Installations For Internal Combustion Engines (AREA)
• Electron Sources, Ion Sources (AREA)
• Plasma Technology (AREA)
• Thin Film Transistor (AREA)

Applications Claiming Priority (8)

Publications (2)

Family

ID=48698613

Family Applications (3)

Family Applications Before (2)

Country Status (6)

Families Citing this family (19)

Family Cites Families (58)

• 2012
  • 2012-12-27 EP EP12863100.9A patent/EP2798673B1/de active Active
  • 2012-12-27 WO PCT/US2012/071849 patent/WO2013101951A1/en active Application Filing
  • 2012-12-27 EP EP12863524.0A patent/EP2801102B1/de active Active
  • 2012-12-27 WO PCT/US2012/071833 patent/WO2013101937A1/en active Application Filing
  • 2012-12-27 KR KR1020147021047A patent/KR101988068B1/ko active IP Right Grant
  • 2012-12-27 WO PCT/US2012/071845 patent/WO2013101948A1/en active Application Filing
  • 2012-12-27 CN CN201280065581.6A patent/CN104024147A/zh active Pending
  • 2012-12-27 CN CN201280070838.7A patent/CN104137218B/zh active Active
  • 2012-12-27 EP EP12861564.8A patent/EP2797837A4/de not_active Withdrawn
  • 2012-12-27 JP JP2014550467A patent/JP6278897B2/ja active Active
  • 2012-12-27 CN CN201280070914.4A patent/CN104769698B/zh not_active Expired - Fee Related
  • 2012-12-27 IN IN5630DEN2014 patent/IN2014DN05630A/en unknown
  • 2012-12-27 CN CN201280070857.XA patent/CN104137254B/zh active Active
  • 2012-12-27 WO PCT/US2012/071837 patent/WO2013101941A1/en active Application Filing
  • 2012-12-27 WO PCT/US2012/071841 patent/WO2013101944A2/en active Application Filing
  • 2012-12-27 CN CN201280070924.8A patent/CN104160467B/zh active Active
  • 2012-12-27 KR KR1020147021370A patent/KR101988069B1/ko active IP Right Grant
  • 2012-12-27 KR KR1020147021314A patent/KR20140128975A/ko not_active Application Discontinuation

Also Published As

Similar Documents

Legal Events