EP2753863A1 - Beleuchtungsvorrichtung - Google Patents
BeleuchtungsvorrichtungInfo
- Publication number
- EP2753863A1 EP2753863A1 EP12755960.7A EP12755960A EP2753863A1 EP 2753863 A1 EP2753863 A1 EP 2753863A1 EP 12755960 A EP12755960 A EP 12755960A EP 2753863 A1 EP2753863 A1 EP 2753863A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- light
- semiconductor chips
- lighting device
- plate
- recesses
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V13/00—Producing particular characteristics or distribution of the light emitted by means of a combination of elements specified in two or more of main groups F21V1/00 - F21V11/00
- F21V13/12—Combinations of only three kinds of elements
- F21V13/14—Combinations of only three kinds of elements the elements being filters or photoluminescent elements, reflectors and refractors
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V3/00—Globes; Bowls; Cover glasses
- F21V3/04—Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
- F21V9/30—Elements containing photoluminescent material distinct from or spaced from the light source
- F21V9/32—Elements containing photoluminescent material distinct from or spaced from the light source characterised by the arrangement of the photoluminescent material
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2105/00—Planar light sources
- F21Y2105/10—Planar light sources comprising a two-dimensional array of point-like light-generating elements
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2105/00—Planar light sources
- F21Y2105/10—Planar light sources comprising a two-dimensional array of point-like light-generating elements
- F21Y2105/12—Planar light sources comprising a two-dimensional array of point-like light-generating elements characterised by the geometrical disposition of the light-generating elements, e.g. arranging light-generating elements in differing patterns or densities
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
Definitions
- Beieuchtungs orcardi It is a lighting device, for example, for room lighting, specified.
- LED emitting diodes
- LED-based light sources usually have the following characteristics: In order to produce mixed-colored and in particular white light, LED-based light sources usually have the following characteristics:
- Light-emitting diode chips which are individually provided with a phosphor. So that a uniform color impression in a light source with a plurality of such LED-based
- Light sources with individual phosphors can arise from the outset by a precise selection of the
- LED chips and the phosphor layers are each set very precisely the radiated color. This results in high demands on an exact
- ballasts for LED-based light sources are usually considered potential-free compact
- At least one object of certain embodiments is to provide a lighting device having a plurality of light-emitting semiconductor chips.
- Lighting device a support plate on which a plurality of mutually spaced apart light-emitting semiconductor chips is arranged.
- the support plate on which a plurality of mutually spaced apart light-emitting semiconductor chips is arranged.
- Lighting device to be suitable for room lighting.
- the carrier plate to a plastic material and can, for example
- the carrier plate conductor tracks or electrical contact tracks on a surface or in the
- the carrier plate for example, a
- the carrier plate can be a plastic layer have, which is glued to a metal plate or a metal foil.
- the metal plate or metal foil can
- Rear side of the support plate may be arranged.
- the carrier plate has a reflective mounting surface, on which the plurality of light-emitting semiconductor chips is arranged.
- the reflective mounting surface can be formed in particular by a metallically conductive layer, ie
- the metallically conductive layer can also provide, for example, an electrical connection for the semiconductor chips and at least partially in the form of conductor tracks, contact paths and / or connection surfaces
- the metallically conductive layer can, for example, be vapor-deposited or patterned by phototechnical means and subsequently electrolytically reinforced. It is also possible for the metallically conductive layer by others
- the semiconductor chips are applied by gluing, for example by means of a conductive adhesive, or by soldering to the metallically conductive layer. It is also possible to electrically connect light-emitting semiconductor chips with contact terminals facing away from the carrier by bonding, that is to say by so-called bonding wires, to the metallically conductive layer. According to another embodiment, the
- the radiating plate may comprise or be made of a transparent or translucent material, for example a plastic material or a glass.
- the radiating plate may be formed, for example, as a diffuser, which in particular in conjunction with the reflective mounting surface of the support plate a
- the radiation plate has over each of the plurality of light-emitting
- the recesses have such dimensions that the
- Diffuser material or the wavelength conversion substance is spaced from the semiconductor chips.
- the recesses are dome-shaped.
- the recesses are dome-shaped.
- Ellipse sections be formed, so that the respective inner surface is in the form of a spherical shell or a
- the recesses can be in the
- Radiation plate for example, incorporated by embossing be. It is also possible to make the recesses in the manufacture of the radiating plate simultaneously. Rejects that
- Radiator plate is a plastic or a glass or is made of it, the recesses in the molding of the
- Radiation plate for example, by casting, incorporated. It is also possible to have the recesses in one
- the recesses are formed the same, ie in particular with the same shape and the same size. It is alternatively also possible that the recesses are formed differently.
- exactly one light-emitting semiconductor chip is in each case one
- the recesses have a diameter which is at least twice greater than side lengths of the light-emitting semiconductor chips. Furthermore, the recesses diameter
- adjacent recesses may preferably
- the radiating plate is fixed to the carrier plate.
- the carrier plate For example, the
- Radiation plate by means of a fixed but detachable connection possibility to be attached to the support plate.
- the radiating plate by means of clamping nails be connected to the carrier plate.
- the clamping nails which may be formed, for example, as plastic nails or plastic rivets, can by the light emitting surface of the radiating plate through the radiating plate and the
- Carrier plate through to a back of the support plate, where they are connected with Klemmnagelkappen in a clamping connection.
- the radiating plate and the carrier plate may have holes through which the clamping nails protrude.
- the clamping nails can also others
- Connecting pins are used, such as screws.
- the radiating plate can also be mounted laterally displaceable on the support plate, for example with
- Connecting pins such as clamping nails or
- Support plate and / or the radiating plate which have a larger diameter than the connecting pins or which are designed for example as slots.
- one or more or all of the semiconductor chips may be monochromatic light or else
- a semiconductor chip can be a light-emitting
- Wavelength conversion element in the form of a Phosphor layer, a phosphor plate or a phosphor-containing potting is applied, the
- the semiconductor chips may in particular be formed as epitaxially grown semiconductor layer sequences or in each case an epitaxially grown one
- Semiconductor layer sequence may comprise an arsenide, phosphide and / or nitride compound semiconductor material, which is formed in accordance with the desired light in terms of its composition and in terms of its layer structure.
- an arsenide, phosphide and / or nitride compound semiconductor material which is formed in accordance with the desired light in terms of its composition and in terms of its layer structure.
- the semiconductor chips are equal to one another and emit at least substantially the same light. "Essentially the same light” and “same semiconductor chips” means here and in the
- the semiconductor chips may preferably emit blue light.
- the light of the semiconductor chips can continue as below
- the illumination device can emit mixed-colored light.
- semiconductor chips emitting different colors are used, which do not start until the
- Semiconductor chips is generated. This may also make it possible, for example, for information, for example traffic information, notes or logos, such as company logos, to be clearly color readable on the light emitting surface, while white light is perceived by the arrangement of differently colored semiconductor chips at a location to be illuminated.
- information for example traffic information, notes or logos, such as company logos
- white light is perceived by the arrangement of differently colored semiconductor chips at a location to be illuminated.
- Such an unusual experience has hitherto been known, for example, only from polished glass prisms of chandeliers, in which colored areas of the lamp are artificially caused by white light.
- the semiconductor chips on the carrier plate are spaced apart from one another in such a way
- Side lengths for semiconductor chips may for example be less than or equal to a few millimeters, in particular less than or equal to 1 millimeter.
- the semiconductor chips having a density of about 1 semiconductor chip per
- Carrier plate allows for a large jet area
- the lighting device can be a large light emitting surface associated with a small
- the metallically conductive layer has a significantly larger area than the area occupied by the semiconductor chips, whereby an effective heat distribution on the carrier plate is achieved.
- the semiconductor chips can be adhesively bonded or soldered onto the metallically conductive layer in an electrically conductive manner, so that the metallically conductive layer simultaneously
- the carrier plate has an insulating layer, for example a plastic layer on which the metallically conductive layer is applied, and if the insulating layer has sufficiently high electrical insulation of contact possibilities, the entire interconnection of the light-emitting semiconductor chips can, for example, also be based on the power grid potential. It can be simple low-loss power supplies with voltages of several times the respective individual voltage of a semiconductor chip used become. Below, an embodiment of a suitable electrical circuit is described.
- Semiconductor chips on the support plate, in particular on the metallically conductive layer, is essentially determined by the physically limited air-heat transfer rate with natural convection of a maximum of about 10 W / (Km 2 ), wherein the natural convection still by a
- Heat radiation can be supplemented in the best of the same order of magnitude.
- the carrier plate has a plurality of webs on the mounting surface and / or on the rear side opposite the mounting surface.
- the webs may be formed, for example, in the form of profile knobs or web-shaped elevations. By the webs, for example, an increase in the stability of the webs
- Carrier plate can be achieved.
- the ⁇ can be achieved.
- the ⁇ can be achieved.
- the ⁇ can be achieved.
- the ⁇ can be achieved.
- Carrier plate between the webs have a thickness of about 0.5 mm to about 2 mm, while the webs may have a web height in the order of 0.3 mm to 2 mm, the boundaries are respectively included, whereby the material of the support plate mechanical Strength and thus security against bending and twisting can be given.
- the radiating plate may have grooves on the side facing the carrier plate in which on the mounting side of the
- Support plate existing webs are arranged. As a result, an increase in the stability of the connection between the carrier plate and the radiating plate can be achieved.
- Mounting surface opposite back are arranged, for example, also serve for cooling.
- Main cooling air flow are, in natural convection so perpendicular to the later operating orientation of the
- the back webs can be particularly preferably along the
- Air flow direction to achieve a chimney effect thus can be a mechanical stiffening and at the same time
- the radiating plate has a web-shaped structure on the light outcoupling surface.
- the carrier plate or at least the rear side of the carrier plate facing away from the mounting surface has a material or a coating which has good heat radiation.
- a heat emissivity In particular, under a good heat radiation, a heat emissivity
- Heat emission can, for example, using glass as
- Material of the carrier plate can be achieved.
- the carrier plate In the case of a back coating of the carrier plate, the
- Coating in particular be rough, for example, formed by a radiator paint or a suitable paint or a glaze.
- Metal plate or metal foil may have, for example, webs described above and / or a heat-radiating surface coating described above.
- Surface coating for example, be designed as Eloxal Mrs. Furthermore, it is also possible to design as Eloxal Mrs. Furthermore, it is also possible to design as Eloxal Mrs. Furthermore, it is also possible to design as Eloxal Mrs.
- the wavelength conversion substance can be arranged in the form of a phosphor directly on the semiconductor chips. Particularly preferred is the
- Wavelength conversion material but arranged in the recesses of the radiating plate. It is also possible that both directly on a semiconductor chip and on the
- the wavelength conversion substances may be the same or different, to a desired
- the primary light and the secondary light may be one or more wavelengths and / or wavelength ranges in an infrared to
- the primary light may be a wavelength range of one
- the primary light and the secondary light may have ultraviolet to green wavelength range, while the secondary light may have a wavelength range from a blue to infrared wavelength range.
- the primary light and the secondary light may have ultraviolet to green wavelength range, while the secondary light may have a wavelength range from a blue to infrared wavelength range.
- the primary light preferably give a blue-colored luminous impression and the secondary light a yellow-colored luminous impression caused by spectral
- the wavelength conversion substance may comprise one or more of the following materials: rare earth and alkaline earth metal garnets, for example YAG: Ce 3+ , nitrides, nitridosilicates, sions, sialones, aluminates, oxides,
- Halophosphates orthosilicates, sulfides, vanadates and
- Wavelength conversion material additionally or alternatively comprise an organic material selected from a group
- Wavelength conversion substance in the recesses may in each case comprise suitable mixtures and / or combinations of the stated materials.
- the material or materials for the wavelength conversion substance may be in the form of particles which may have a size of 2 to 10 ⁇ m. According to a further embodiment is to the
- the scattering particles have or may be formed by, for example, a
- Metal oxide such as titanium oxide or aluminum oxide such as corundum, and / or have glass particles or may be therefrom.
- the scattering particles can be diameter or
- the transparent matrix material can be any transparent matrix material and / or chemically be bound.
- the transparent matrix material can be any transparent matrix material.
- siloxanes for example, siloxanes, epoxies, acrylates,
- Methyl methacrylates imides, carbonates, olefins, styrenes, urethanes or derivatives thereof in the form of monomers,
- the matrix material may comprise or be an epoxy resin, polymethylmethacrylate (PMMA), polystyrene, polycarbonate, polyacrylate, polyurethane or a silicone resin such as polysiloxane or mixtures thereof.
- PMMA polymethylmethacrylate
- polystyrene polystyrene
- polycarbonate polyacrylate
- polyacrylate polyurethane
- silicone resin such as polysiloxane or mixtures thereof.
- Wavelength conversion material in the recesses may be distributed homogeneously in the matrix material. Furthermore, in one or more or all recesses, a combination of a plurality of said materials for the
- Diffuser material and / or the wavelength conversion substance may be arranged, which mixed or in different
- Layers can be present.
- the diffuser material and / or the wavelength conversion substance formed on the inner surface layered As a result, the diffuser material and / or the
- Wavelength conversion material in particular spaced from the respective associated light-emitting semiconductor chips in the recess to be arranged.
- the diffuser material and / or the wavelength conversion substance may be evenly distributed over the inner surface of a recess. Alternatively, it is also possible that one
- Wavelength conversion substance for example by a
- Sedimentation method or other suitable method uneven in terms of its composition and / or is applied with respect to its thickness in a recess, for example, a desired
- the radiation plate in at least some or all recesses on the inner surface facing the semiconductor chips one
- Reflector layer having for the of
- Wavelength conversion material has reflected secondary light reflecting and for that of the semiconductor chips
- Reflector layer for example, in the form of such
- Inner surface of a recess can the
- Wavelength conversion substance thermally separated from
- Conversion loss heat can rather be delivered via the radiating plate to the ambient air at the light output surface, whereby the wavelength conversion material and also the semiconductor chip can be kept cooler than in the case of a directly arranged on a semiconductor chip
- Wavelength conversion substance on the inner surface of the Recess over the semiconductor chip with respect to a direct chip coating larger converter layer surface, whereby the power density of the primary light in
- Wavelength conversion substance is lower. This is a significantly lower aging of the
- Wavelength conversion material to be expected.
- the carrier plate is equipped with the light-emitting semiconductor chips.
- the semiconductor chips can all emit the same light, in particular blue light.
- Semiconductor chips which result in slightly different color locations and / or wavelength ranges of the respectively emitted light, can be detected by means of a short operation of the semiconductor chips and a preferably fast,
- Wavelength conversion materials and their respective
- Distributions can be calculated on the inner surfaces of the recesses of the radiating plate, which are required that over the entire radiating plate as uniformly bright and the same color, such as white, light can be emitted. For example, at by the
- Wavelength conversion materials can be compensated.
- Radiation plate can be followed in an automatic process, after which the radiation plate with the carrier
- the radiation plate distributed for diffuse scattering in the radiation plate
- the scattering particles which can be melted in, for example, in the production of the radiating plate, for example, a previously described
- the radiating plate has a translucent, light-scattering coating on the light output surface.
- the radiation plate on the light output surface scattering structures for example in the form of depressions or elevations, which
- the radiating plate on the light output surface may be evenly or randomly distributed on the light output surface. Additionally or alternatively, it is also possible that the radiating plate on the light output surface.
- the lighting device is particularly preferably spatially
- Radiating plate is arranged downstream of the recesses, wherein in the recesses a wavelength conversion substance
- Plastic layer or plate are formed, on which the semiconductor chips are electrically and simultaneously thermally connected.
- the radiation plate preferably has scattering structures on the light emission surface and / or the light emitting surface opposite
- the radiation plate has a lenticular shape over at least some recesses
- the surface structure can be any shape on.
- the surface structure can be any shape on.
- the lenticular surface structure in the form of a recess, ie concave, as a depression in the
- Lenticular surface structures can be incorporated simultaneously as described above for the recesses in producing the radiating plate, for example by a stamping or rolling process or by a casting process by which the radiating plate, for example from a
- Plastic material or glass is produced. It is also possible to use the lenticular surface structures
- the material of the lenticular surface structures may be the same as for the radiating plate or another.
- Lighting device an electrical circuit for
- the electrical circuit which may allow, for example, the operation of the lighting device with mains voltage, for example, a non netzpotentialbuilds
- Support plate with the semiconductor chips and the radiating plate are made particularly filigree.
- the lighting device described here can be any lighting device.
- the heat for example, directly to the environment, so the room air, are delivered without additional fans and the associated noise development must be taken into account.
- the mechanical assembly can be done easily, at the same time the electrical contact and the heat dissipation and the high voltage insulation, for example, up to 4 kV, can be made possible.
- Figure 1 is a schematic representation of a
- Figures 2A to 7C are schematic representations of
- FIG. 8 shows schematic representations of arrangements of
- Figure 9 is a schematic representation of an electrical
- FIG. 1 shows a section of a lighting device 100 according to a first exemplary embodiment.
- Lighting device 100 has a plurality of
- Support plate 8 are arranged.
- the support plate has in the embodiment shown, a plastic plate or plastic layer on which as a reflective
- Mounting surface 89 is disposed a metallically conductive layer, in addition to the reflection of the of
- Light emitting semiconductor chips 1 emitted primary light can also serve to electrically connect the semiconductor chips 1.
- the light-emitting semiconductor chip 1 is in
- the radiation plate 20 Downstream of the radiation plate 20, which has a light output surface 29, which faces away from the semiconductor chip 1 and over which the light emitted from the semiconductor chip 1 light from the illumination device 100 can be emitted.
- the radiation plate 20 has the light emitting
- Recesses 22 has an inner surface 28 on which a wavelength conversion substance 21 is arranged.
- the wavelength conversion substance 21 may also have a diffuser material on the inner surfaces 28 of FIG.
- Recesses 22 may be arranged.
- the semiconductor chips 1 can, for example, emit blue light, which is partially converted by the wavelength conversion substance 22 into yellow and / or green and red secondary light, so that the illumination device 100 emits white light during operation.
- the light-emitting semiconductor chips 1 radiate in
- Composition and / or its thickness are fitted in order to achieve the highest possible homogeneity over the Lichtabstrahl Structure 29 both in terms of radiated brightness and the radiated color locus.
- exactly one semiconductor chip 1 is followed by a recess 22 in each case.
- a plurality of semiconductor chips 1 are arranged within a recess 22.
- the carrier 8 has approximately one
- the radiating plate 20 is made of a plastic material or a glass that is transparent, ie transparent, or
- the illumination device 100 can be designed in any desired size and can have, for example, more than 100 light-emitting semiconductor chips 1. A suitable electrical circuit for operating the lighting device 100 is shown in conjunction with FIG.
- Lighting device 100 is.
- the illumination device 101 according to the exemplary embodiment in FIGS. 2A and 2B, which respectively show a schematic sectional view and a plan view of the light outcoupling surface 29 of the illumination device 101, has, in addition to the illumination device 100 of the exemplary embodiment in FIG. 1, the rear side 88 facing away from the semiconductor chips 1 Support plate 8 a plurality of webs 33. These serve on the one hand the stiffening of the
- the webs 33 may be in the form of profile nubs, based on the
- the support plate 8 and the radiating plate 20 are connected to each other by means of clamping nails 31. These are formed as plastic nails, protrude through the radiating plate 20 and the support plate 8 and are clamped with arranged on the back 88 of the support plate 8 Klemmnagelkappen 32.
- Radiating plate 20 and the support plate 8 fixed but also releasably stapled together.
- FIG. 3 shows a further exemplary embodiment of a lighting device 102.
- This has as so-called flip-chip semiconductor chips 1, which are arranged on a metallically conductive layer 4 of the carrier 8 and connected to this electrically conductive. This is between the back
- a connecting layer 6 for example in the form of a
- Conductive adhesive or a solder layer arranged.
- Semiconductor chips 1 are furthermore by means of a transparent potting 18 on the metallically conductive layer 4th
- the carrier 8 further comprises a plastic plate on which the metallically conductive layer 4 is applied, and whose rear side 88 has webs 33.
- the plastic plate of the support plate 8 has in the illustrated embodiment, a thickness dL of about 0.5 mm to about 2 mm, while the above arranged radiating plate 20 has a thickness d2 of about 1 mm to about 2 mm, wherein the boundaries are each included.
- the webs 33 on the back 88 of the support plate 8 have a height of about 0.3 mm to about 2 mm, so that by the webs 33, the lighting device 102 can be significantly stiffened and so mechanical resistance to bending and twisting can be achieved that otherwise cracks in the
- Connection layer 6 could lead semiconductor chip 1 and the metallically conductive layer 4.
- a surface coating 34 for example in the form of a heart body color, which has a high heat emissivity of as close to 1 in a temperature range of 50 ° C to 100 ° C, for example, preferably at about 80 ° C.
- Temperature can be the typical operating temperature of the
- Lighting device 102 correspond.
- the radiating plate 20 has, as clearly shown in Figure 3, dome-shaped recesses 22 which are spherical or elliptical and which are preferably embossed or cast.
- the recesses 22 continue to have one
- Diameter which is at least twice the side length of each arranged in a recess 22
- Semiconductor chips 1 corresponds.
- Wavelength conversion substance 21 can thereby be arranged thermally separated from the respective semiconductor chip 1, whereby the advantages described above in the general part can be achieved.
- Wavelength conversion substance 21 on the inner surface 28 of the recesses 22 it may also be possible, a
- Wavelength conversion material applied directly to the semiconductor chip 1 and to provide the inner surfaces 28 of the recesses 22 with a further wavelength conversion material 21 and / or a diffuser material. Furthermore, the radiation plate 20 scattering particles 25 and on the Lichtabstrahl
- the radiation plate 20 diffusely translucent and thus translucent. Furthermore, the radiation plate 20 has embedded scattering particles. By the scattering structures 23, 24 and the scattering particles 25, an improvement in the homogeneity of the radiated brightness and the emitted color impression can be achieved. Furthermore, the illumination device 102 may be obstructive to a viewer from the side of the light emitting surface 29
- FIG. 4 shows a further exemplary embodiment of a lighting device 103, which differs from the one shown in FIG Lighting device 102 of the previous
- Metal foil 42 and the insulating plastic layer 41 may be glued together, for example.
- Metal plate or metal foil 42 is, for example
- the metal plate or metal layer 42 further comprises on the rear side 88 of the support plate 8 forming side of a paint or anodized or other coating 34, which has a particularly high bathadosabstrahlkostoryen in a wavelength range of about 10 ym, especially at slightly elevated room temperature.
- This can be achieved by glazing or anodization or by a radiator color, which can be designed, for example, also colored and not black.
- the insulating plastic layer 41 is designed to be resistant for a short time during the soldering for a few seconds. Alternatively is also one
- the radiating plate 20 of the lighting device 104 furthermore has lens-shaped openings 20 over the cutouts 20
- the lenticular surface structure 26 is formed as a convex elevation.
- the lenticular surface structure 26, for example, as a concave
- Lenticular surface structure 26 arranged centered to each other. Furthermore, preferably also the
- the lenticular surface structures 26 may
- the radiation plate 20 are formed by appropriate casting or embossing. Furthermore, it is also possible, the lenticular
- FIG. 6 shows a further exemplary embodiment of a lighting device 105 which is located on the
- Light emitting surface 29 lens-shaped surface structures 26 has. By means of the dashed lines, the beam paths of the semiconductor chip 1 are shown in FIG.
- the primary light is through the lenticular
- Lambert's radiation distribution is radiated, although bundled, but with a different one
- additional scattering measures such as scattering particles, a scattering coating or scattering structures, it can be achieved that the light emitting surface 29 can detect individual points of light with the primary light, while at a location to be illuminated, a homogeneous superposition of the primary light and the secondary light is perceived.
- Wavelength conversion substance 21 emitted secondary light is on the semiconductor chip 1 side facing the
- Wavelength conversion substance 21 a reflector layer 27 which is generated for the semiconductor chip 1
- Primary light is permeable and that of the
- Wavelength conversion substance 21 generated secondary light is reflective.
- the reflector layer 27 can be
- FIGS. 7A to 7C show a further exemplary embodiment of a lighting device 106.
- FIGS. 7A and 7B schematic sectional views of Figures 7A and 7B extend along the webs 36 and 33 according to the plan view in Figure 7C. By means of the dashed lines in each case the elements not shown in the respective image plane are indicated in FIGS. 7A and 7B.
- the lighting device 106 shown has both on the reflective mounting surface 89 and on the opposite rear side 88 webs 33 and 36 which are perpendicular to each other. This can be a further improvement and an increase in stiffness or
- the radiation plate 20 has grooves 30 in which the webs 36 formed on the reflective mounting surface 89 are arranged.
- FIG. 8 shows exemplary embodiments of the arrangement of lighting devices in a room.
- the lighting devices 107 to 112 illustrated in FIG. 8 may be designed, for example, according to one or more of the aforementioned exemplary embodiments.
- the illumination devices 107 and 108 are horizontal and perpendicular to or in the wall of the example shown
- the lighting devices are preferably mounted in front of the wall, that a rear ventilation is possible while at an arrangement in the wall heat dissipation can take place through the wall.
- the lighting devices 109 and 110 are arranged horizontally and vertically in room surface corners, while the
- Lighting devices 111 is arranged symmetrically tilted against each other on the ceiling.
- Lighting device 112 is, for example, horizontal or tilted to the horizontal, arranged hanging from the ceiling and can, for example, in a
- the webs 33 shown in the previous embodiments may be the
- Carrier body 8 aligned along the direction of gravity to achieve a convection flow for cooling.
- Lighting devices are easily operated and controlled on a 230V AC power network with a phase conductor L, a neutral conductor N and a protective conductor SL, wherein parts of the electronic circuit 200 as
- the electronic circuit 200 has circuit parts 91, 92 and 93, wherein the circuit part 93 by one of the vorab shown lighting devices 100 to 112 can be formed.
- the circuit part 91 which is designed as a so-called switch-on, serves to adjust the electrical
- ballast circuit part 92 the designated as the circuit part 93
- Lighting device to be operated.
- the switches Sl and S2 of the circuit part 91 which is also part of a room installation or in the circuit part 92nd
- each half of the light-emitting semiconductor chips of the lighting device labeled with D in Figure 9 can be switched by the switches Sl and S2.
- the switch S3 is used to set a small power
- the lighting device For controlling the lighting device in the circuit part 93 by means of the switches Sl and S2 of the circuit part 1, the lighting device also has two separate circuits with a plurality of semiconductor chips connected in series. For a high power factor (cos ⁇ ) should the
- the lighting device is in Circuit part 93 to the protective conductor SL by means of
- the executed as a ballast circuit part 92 can be separated from the circuit part 93, so the
- Lighting device or alternatively also be implemented integrated in the lighting device.
- C Im / ( ⁇ -f (Us-Uc)
- the capacitor C3 in the small power circuit has to limit the operating current of the semiconductor chips to a desired fraction of the current in the over
- the capacitance of the capacitor C3 is as shown
- Embodiment then about 50 nF.
- the circuit part 92 continues to have
- Switch-on limiting resistors R on which in the Order of magnitude of about 0.03-Ueff / P with the effective voltage Ueff and the power loss P are, which in the shown
- Embodiment corresponds to a resistance of about 80 ohms with a power loss of less than 1.5 W.
- Electrolytic capacitors are designed with a capacity of about 1 yF to about 5 yF. Furthermore, the circuit part 92 rectifier units Bl and B2, which as
- electrical circuit 200 also only one branch of current,
- the switchable via the switch Sl is the switchable via the switch Sl
- Lighting devices may be present, even if they are not explicitly shown. Furthermore, features according to the embodiments described in the general part in the embodiments may alternatively or additionally
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- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102011112710A DE102011112710A1 (de) | 2011-09-07 | 2011-09-07 | Beleuchtungsvorrichtung |
PCT/EP2012/065760 WO2013034395A1 (de) | 2011-09-07 | 2012-08-10 | Beleuchtungsvorrichtung |
Publications (2)
Publication Number | Publication Date |
---|---|
EP2753863A1 true EP2753863A1 (de) | 2014-07-16 |
EP2753863B1 EP2753863B1 (de) | 2017-10-18 |
Family
ID=46800161
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP12755960.7A Not-in-force EP2753863B1 (de) | 2011-09-07 | 2012-08-10 | Beleuchtungsvorrichtung |
Country Status (5)
Country | Link |
---|---|
US (1) | US20150241004A1 (de) |
EP (1) | EP2753863B1 (de) |
CN (1) | CN103917819A (de) |
DE (1) | DE102011112710A1 (de) |
WO (1) | WO2013034395A1 (de) |
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ITMI20130499A1 (it) * | 2013-04-02 | 2014-10-03 | Apuomarg S R L | Pannello stratificato retroilluminato comprendente un assemblaggio di supporto e retroilluminazione |
DE102013104240B4 (de) * | 2013-04-26 | 2015-10-22 | R. Stahl Schaltgeräte GmbH | Explosionsgeschützte Anordnung elektrischer und/oder elektronischer Bauelemente |
DE202013101814U1 (de) * | 2013-04-26 | 2014-07-29 | Zumtobel Lighting Gmbh | LED-Modul mit Berührungsschutzelement |
JP6470606B2 (ja) * | 2015-03-27 | 2019-02-13 | 株式会社エンプラス | 発光装置、面光源装置および表示装置 |
DE102015212692B3 (de) * | 2015-07-07 | 2016-11-10 | Osram Gmbh | Verbundbauteil und Verfahren zum Herstellen eines Verbundbauteils |
KR20170124680A (ko) * | 2016-05-02 | 2017-11-13 | 삼성디스플레이 주식회사 | 광원 어셈블리 및 이를 포함하는 표시 장치 |
CN106186174B (zh) * | 2016-07-07 | 2020-08-14 | 圆融健康科技(深圳)有限公司 | 面光源水杀菌模块及水杀菌装置 |
US20190004238A1 (en) * | 2017-06-29 | 2019-01-03 | Lite-On Technology Corporation | Optical module and illumination apparatus |
CN112531095A (zh) | 2017-12-08 | 2021-03-19 | 首尔半导体株式会社 | 背光单元 |
US10948163B2 (en) * | 2017-12-08 | 2021-03-16 | Seoul Semiconductor Co., Ltd. | Backlight unit |
DE102017130764B4 (de) * | 2017-12-20 | 2024-01-04 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Vorrichtung mit Halbleiterchips auf einem Primärträger und Verfahren zur Herstellung einer solchen Vorrichtung |
CN108488693A (zh) * | 2018-03-28 | 2018-09-04 | 武汉华星光电技术有限公司 | Mini LED背光模组及荧光膜层的制作方法 |
CN110195829B (zh) * | 2019-05-27 | 2020-08-11 | 惠州市华星光电技术有限公司 | 一种薄型化灯板及其制作方法 |
CN110346969A (zh) * | 2019-06-14 | 2019-10-18 | 惠州市华星光电技术有限公司 | 一种背光模块及显示装置 |
CN115335635A (zh) * | 2020-04-14 | 2022-11-11 | 昕诺飞控股有限公司 | 照明设备 |
US12055283B1 (en) * | 2023-11-20 | 2024-08-06 | Signcomplex Limited | Lamp with removable lens |
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DE102007023651A1 (de) * | 2007-05-22 | 2008-11-27 | Osram Gesellschaft mit beschränkter Haftung | Beleuchtungseinrichtung, Hinterleuchtungsvorrichtung und Anzeigevorrichtung |
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DE102008054029A1 (de) * | 2008-10-30 | 2010-05-06 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil |
KR101039957B1 (ko) * | 2008-11-18 | 2011-06-09 | 엘지이노텍 주식회사 | 발광 장치 및 이를 구비한 디스플레이 장치 |
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WO2011066421A2 (en) * | 2009-11-25 | 2011-06-03 | Cooper Technologies Company | Systems, methods, and devices for sealing led light sources in a light module |
TW201123125A (en) * | 2009-12-21 | 2011-07-01 | Aussmak Optoelectronic Corp | Light transmissible display apparatus |
KR20110080514A (ko) * | 2010-01-06 | 2011-07-13 | 엘지이노텍 주식회사 | 백라이트 유닛 및 이를 이용한 디스플레이 장치 |
WO2011088363A2 (en) * | 2010-01-15 | 2011-07-21 | Express Imaging Systems, Llc | Apparatus, method to change light source color temperature with reduced optical filtering losses |
CN201672300U (zh) * | 2010-05-07 | 2010-12-15 | 林万炯 | 大功率led条灯 |
TWI408836B (zh) * | 2010-07-06 | 2013-09-11 | 良盟塑膠股份有限公司 | 發光二極體裝置 |
US8579462B2 (en) * | 2011-01-05 | 2013-11-12 | Itc Incorporated | Lighting assembly |
-
2011
- 2011-09-07 DE DE102011112710A patent/DE102011112710A1/de not_active Withdrawn
-
2012
- 2012-08-10 US US14/343,739 patent/US20150241004A1/en not_active Abandoned
- 2012-08-10 CN CN201280043743.6A patent/CN103917819A/zh active Pending
- 2012-08-10 WO PCT/EP2012/065760 patent/WO2013034395A1/de active Application Filing
- 2012-08-10 EP EP12755960.7A patent/EP2753863B1/de not_active Not-in-force
Also Published As
Publication number | Publication date |
---|---|
US20150241004A1 (en) | 2015-08-27 |
WO2013034395A1 (de) | 2013-03-14 |
DE102011112710A1 (de) | 2013-03-07 |
EP2753863B1 (de) | 2017-10-18 |
CN103917819A (zh) | 2014-07-09 |
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