EP2702607A4 - Cleaning lead-frames to improve wirebonding process - Google Patents

Cleaning lead-frames to improve wirebonding process

Info

Publication number
EP2702607A4
EP2702607A4 EP12776905.7A EP12776905A EP2702607A4 EP 2702607 A4 EP2702607 A4 EP 2702607A4 EP 12776905 A EP12776905 A EP 12776905A EP 2702607 A4 EP2702607 A4 EP 2702607A4
Authority
EP
European Patent Office
Prior art keywords
frames
improve
wirebonding process
cleaning lead
cleaning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP12776905.7A
Other languages
German (de)
French (fr)
Other versions
EP2702607A2 (en
Inventor
Terence Quintin Collier
David Barry Rennie
Rajkumar Ramamurthi
Gene Everad Parris
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Versum Materials US LLC
Original Assignee
Air Products and Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Products and Chemicals Inc filed Critical Air Products and Chemicals Inc
Publication of EP2702607A2 publication Critical patent/EP2702607A2/en
Publication of EP2702607A4 publication Critical patent/EP2702607A4/en
Ceased legal-status Critical Current

Links

Classifications

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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
    • H01L21/4835—Cleaning, e.g. removing of solder
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
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    • H01L2924/151—Die mounting substrate
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    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
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EP12776905.7A 2011-04-25 2012-04-25 Cleaning lead-frames to improve wirebonding process Ceased EP2702607A4 (en)

Applications Claiming Priority (2)

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US201161478582P 2011-04-25 2011-04-25
PCT/US2012/034912 WO2012148967A2 (en) 2011-04-25 2012-04-25 Cleaning lead-frames to improve wirebonding process

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EP2702607A2 EP2702607A2 (en) 2014-03-05
EP2702607A4 true EP2702607A4 (en) 2015-06-24

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JP (1) JP6030637B2 (en)
KR (1) KR101729203B1 (en)
CN (1) CN103620753B (en)
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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201428901A (en) * 2013-01-07 2014-07-16 矽品精密工業股份有限公司 Semiconductor package and fabrication method thereof
US9562211B2 (en) 2013-12-06 2017-02-07 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulation for removing residues on surfaces
US11302669B2 (en) 2015-10-15 2022-04-12 Skyworks Solutions, Inc. Wire bond cleaning method and wire bonding recovery process
US10752867B2 (en) 2018-03-28 2020-08-25 Fujifilm Electronic Materials U.S.A., Inc. Cleaning compositions
US10713583B1 (en) 2019-01-02 2020-07-14 International Business Machines Corporation Removal of wirebonds in quantum hardware
JP7296835B2 (en) 2019-09-19 2023-06-23 株式会社ディスコ WAFER PROCESSING METHOD AND CHIP MEASURING DEVICE
CN117594453A (en) * 2024-01-18 2024-02-23 瑞能微恩半导体(上海)有限公司 Packaging method of transistor packaging structure and transistor packaging structure

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4968397A (en) * 1989-11-27 1990-11-06 Asher Reginald K Non-cyanide electrode cleaning process
US20020127825A1 (en) * 2001-03-12 2002-09-12 Motorola, Inc. Method of preparing copper metallization die for wirebonding
US6828289B2 (en) * 1999-01-27 2004-12-07 Air Products And Chemicals, Inc. Low surface tension, low viscosity, aqueous, acidic compositions containing fluoride and organic, polar solvents for removal of photoresist and organic and inorganic etch residues at room temperature
US20060097366A1 (en) * 2003-07-19 2006-05-11 Ns Electronics Bangkok (1993) Ltd. Semiconductor package including leadframe roughened with chemical etchant to prevent separation between leadframe and molding compound
US20090111220A1 (en) * 2007-10-29 2009-04-30 Freescale Semiconductor, Inc. Coated lead frame
US20100155260A1 (en) * 2008-12-22 2010-06-24 Kwan Yiu Fai Micro-blasting treatment for lead frames

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6057219B2 (en) * 1980-12-26 1985-12-13 株式会社東芝 semiconductor equipment
JP2539093B2 (en) * 1990-10-25 1996-10-02 三菱マテリアル株式会社 Lead frame, manufacturing method thereof, and semiconductor device
JP3160344B2 (en) 1991-01-25 2001-04-25 アシュランド インコーポレーテッド Organic stripping composition
US5433885A (en) 1991-07-17 1995-07-18 Church & Dwight Co., Inc. Stabilization of silicate solutions
DE4444388A1 (en) * 1994-11-28 1996-05-30 Atotech Deutschland Gmbh Process for bonding wires on oxidation-sensitive, solderable metal substrates
JPH08293576A (en) * 1995-04-25 1996-11-05 Toppan Printing Co Ltd Lead frame and manufacture thereof
JP2904192B2 (en) * 1997-06-25 1999-06-14 日本電気株式会社 Method for manufacturing semiconductor device
US6230719B1 (en) * 1998-02-27 2001-05-15 Micron Technology, Inc. Apparatus for removing contaminants on electronic devices
US6358847B1 (en) * 1999-03-31 2002-03-19 Lam Research Corporation Method for enabling conventional wire bonding to copper-based bond pad features
JP4044296B2 (en) 2001-03-22 2008-02-06 株式会社東芝 Manufacturing method of semiconductor device
US6627546B2 (en) 2001-06-29 2003-09-30 Ashland Inc. Process for removing contaminant from a surface and composition useful therefor
KR100972061B1 (en) * 2002-12-30 2010-07-22 동부일렉트로닉스 주식회사 Processing method of pad aluminum of semiconductor device
JP2005150508A (en) * 2003-11-18 2005-06-09 Sanyo Electric Co Ltd Method for manufacturing semiconductor device
JP4700633B2 (en) * 2007-02-15 2011-06-15 株式会社新川 Wire cleaning guide
JP2009099945A (en) * 2007-09-28 2009-05-07 Fujifilm Corp Cleaning agent for semiconductor device and cleaning method using the same
US9048088B2 (en) * 2008-03-28 2015-06-02 Lam Research Corporation Processes and solutions for substrate cleaning and electroless deposition
JP5561914B2 (en) * 2008-05-16 2014-07-30 関東化学株式会社 Semiconductor substrate cleaning liquid composition

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4968397A (en) * 1989-11-27 1990-11-06 Asher Reginald K Non-cyanide electrode cleaning process
US6828289B2 (en) * 1999-01-27 2004-12-07 Air Products And Chemicals, Inc. Low surface tension, low viscosity, aqueous, acidic compositions containing fluoride and organic, polar solvents for removal of photoresist and organic and inorganic etch residues at room temperature
US20020127825A1 (en) * 2001-03-12 2002-09-12 Motorola, Inc. Method of preparing copper metallization die for wirebonding
US20060097366A1 (en) * 2003-07-19 2006-05-11 Ns Electronics Bangkok (1993) Ltd. Semiconductor package including leadframe roughened with chemical etchant to prevent separation between leadframe and molding compound
US20090111220A1 (en) * 2007-10-29 2009-04-30 Freescale Semiconductor, Inc. Coated lead frame
US20100155260A1 (en) * 2008-12-22 2010-06-24 Kwan Yiu Fai Micro-blasting treatment for lead frames

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2012148967A2 *

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TW201308455A (en) 2013-02-16
JP2014516478A (en) 2014-07-10
CN103620753B (en) 2017-05-24
EP2702607A2 (en) 2014-03-05
SG194523A1 (en) 2013-12-30
KR20130142197A (en) 2013-12-27
JP6030637B2 (en) 2016-11-24
CN103620753A (en) 2014-03-05
KR101729203B1 (en) 2017-04-21
WO2012148967A2 (en) 2012-11-01
WO2012148967A3 (en) 2013-01-17
TWI467675B (en) 2015-01-01

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