EP2695202A2 - Cellule solaire et son procédé de fabrication - Google Patents

Cellule solaire et son procédé de fabrication

Info

Publication number
EP2695202A2
EP2695202A2 EP12768551.9A EP12768551A EP2695202A2 EP 2695202 A2 EP2695202 A2 EP 2695202A2 EP 12768551 A EP12768551 A EP 12768551A EP 2695202 A2 EP2695202 A2 EP 2695202A2
Authority
EP
European Patent Office
Prior art keywords
layer
light absorbing
solar cell
absorbing layer
back electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12768551.9A
Other languages
German (de)
English (en)
Other versions
EP2695202A4 (fr
Inventor
Seung Yup Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of EP2695202A2 publication Critical patent/EP2695202A2/fr
Publication of EP2695202A4 publication Critical patent/EP2695202A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present disclosure relates to a solar cell and a method of fabricating the same.
  • CIGS Copper Indium Gallium Selenide
  • a pn-hetero junction device having a substrate structure including a glass substrate, a metallic back electrode layer, a p-type CIGS based light absorbing layer, a high resistance buffer layer, and an n-type window layer, is widely being used nowadays.
  • CIGS Copper Indium Gallium Selenide
  • Embodiments provide a solar cell having improved efficiency and high productivity.
  • a solar cell includes: a substrate; a back electrode layer on the substrate; a light absorbing layer on the back electrode layer; a buffer layer on the light absorbing layer; and a window layer on the buffer layer, wherein the light absorbing layer includes a plurality of voids.
  • a method of fabricating a solar cell includes: forming a back electrode layer on a substrate; forming a light absorbing layer having a plurality of voids on the back electrode layer; a buffer layer on the light absorbing layer; and forming a window layer on the buffer layer.
  • a solar cell in which an amount of absorbed light is augmented by increasing the scattering of incident light through a light absorbing layer including voids.
  • the voids are formed while the light absorbing layer is formed, no additional manufacturing process is required. As a result, it is effective in terms of productivity.
  • Fig. 1 is a plan view of a solar cell according to an embodiment.
  • Figs. 2 to 5 are sectional views illustrating a method of fabricating a solar cell according to an embodiment.
  • Fig. 1 is a plan view of a solar cell according to an embodiment.
  • a solar cell panel includes a supporting substrate 100, a back electrode layer 200, a void 360, a light absorbing layer, a buffer layer 400, and a window layer 500.
  • the supporting substrate 100 has a plate shape, and supports the back electrode layer 200, the light absorbing layer 300, the buffer layer 400, and the window layer 500.
  • the supporting substrate 100 may be an insulator.
  • the supporting substrate 100 may be a glass substrate, a plastic substrate, or a metallic substrate.
  • the supporting substrate 100 may be a soda lime glass substrate.
  • the supporting substrate 100 is formed of soda lime glass
  • Na in the soda lime glass may spread into the light absorbing layer 300 formed of copper indium gallium selenide (CIGS) during a manufacturing process of the solar cell. Due to this, a charge concentration of the light absorbing layer 300 may be increased. This may be a factor that increases the photoelectric conversion efficiency of the solar cell.
  • CGS copper indium gallium selenide
  • the supporting substrate 100 may be formed of ceramic such as alumina, stainless steel, and flexible polymer.
  • the supporting substrate 100 may be transparent and rigid or flexible.
  • the back electrode layer 200 is disposed on the supporting substrate 100.
  • the back electrode layer 200 is a conductive layer.
  • the back electrode layer 200 may allow current to flow into an external of the solar cell by transferring charges generated in the light absorbing layer 300 of the solar cell.
  • the back electrode layer 200 should have high electrical conductivity and low resistivity.
  • the back electrode layer 200 contacts a CIGS compound used to form the light absorbing layer 300, the light absorbing layer 300 and the back electrode layer 200 should have an ohmic contact of low contact resistance value.
  • the back electrode layer 200 needs to maintain high temperature stability during thermal treatment under S or Se atmosphere, which occurs when the CIGS compound is formed. Moreover, the back electrode layer 200 should have excellent adhesiveness to the supporting substrate 100 in order to prevent a de-lamination phenomenon between the back electrode layer 200 and the supporting substrate 100, which results from a difference in thermal expansion coefficients.
  • This back electrode layer 200 may be formed of one of Mo, Au, Al, Cr, W, and Cu. Of those, especially, compared to other elements, Mo has a less difference in thermal expansion coefficients with respect to the supporting substrate 100, so that it may prevent de-lamination phenomenon due to excellent adhesiveness and satisfy overall characteristics required for the back electrode layer 200.
  • the back electrode layer 200 may include at least two layers. At this point, each of the layers may be formed of the same or different metal.
  • the light absorbing layer 300 may be formed on the back electrode layer 200.
  • the light absorbing layer 300 includes a p-type semiconductor compound.
  • the light absorbing layer 300 includes a Group I-III-VI based compound.
  • the light absorbing layer 300 may have a Cu(In,Ga)Se 2 (CIGS) based crystal structure, a copper-indium-selenide based crystal structure, or a copper-gallium-selenide crystal structure.
  • An energy band gap of the light absorbing layer 300 may be about 1.1 eV to about 1.2 eV.
  • the void 360 may be formed in the light absorbing layer 300.
  • the voide 360 may be formed using a polymer of polystyrene (PS) or Polymethylmethacrylate (PMMA).
  • the void 360 has a diameter W1 of about 30 nm to about 1200 nm, and may be formed to scatter a wavelength of light.
  • a plurality of voids 360 may be formed with the same diameter, or may be formed to have different volumes in the diameter range.
  • the void 360 may be formed in a spherical shape or a polygonal shape, but is not limited thereto.
  • a light incident to the light absorbing layer 300 may be scattered by the void 360.
  • the light is more likely to be reflected in a parallel direction due to the scattering, so that photoelectric conversion efficiency may be increased.
  • the light absorbing layer 300 may be formed with a thickness of about 1.5 ⁇ m to about 5 ⁇ m.
  • the volume of the void 360 may be about 5 % to about 35 % of the total volume of the light absorbing layer 300, and more preferably may be about 20 % to about 25 %.
  • the buffer layer 400 is disposed on the light absorbing layer 300.
  • the solar cell including the light absorbing layer 300 of a CIGS based compound forms a pn junction between a CIGS compound layer of a p-type semiconductor and the transparent electrode layer 500 of an n-type semiconductor.
  • a buffer layer having a band gap at the middle of the two materials is required to form a good junction.
  • a material for forming the buffer layer 400 includes CdS and ZnS, and CdS is relatively excellent in terms of the power generation efficiency of the solar cell.
  • the window layer 500 is disposed on the buffer layer 400.
  • the window layer 500 is a transparent conductive layer. Additionally, the window layer 500 has a higher resistance than the back electrode layer 200.
  • the window layer 500 includes an oxide.
  • the window layer 500 may include a zinc oxide, an indium tin oxide (ITO), or an indium zinc oxide (IZO).
  • the oxide may include a conductive impurity such as Al, Al 2 O 3 , Mg, or Ga.
  • the window layer 500 may include an Al doped zinc oxide (AZO) or a Ga doped zinc oxide (GZO).
  • an absorption ratio of light incident to a light absorbing layer may be improved by forming the light absorbing layer with voids.
  • the voids are formed while the light absorbing layer is formed, thereby improving productivity.
  • Figs. 2 to 5 are sectional views illustrating a method of fabricating a solar cell according to an embodiment. Description of the fabricating method refers to that of the above-mentioned solar cell. The description on the above solar cell may be substantially combined with that of the fabricating method.
  • the back electrode layer 200 may be formed on the supporting substrate 100.
  • the back electrode layer 200 may be deposited using Mo.
  • the back electrode layer 200 may be formed through Physical Vapor Deposition (PVD) or plating.
  • an additional layer such as a diffusion prevention layer may be interposed between the supporting substrate 100 and the back electrode layer 200.
  • the light absorbing layer 300 is formed on the back electrode layer 200.
  • CIGS based light absorbing layer 300 methods of forming the CIGS based light absorbing layer 300 by evaporating copper, indium, gallium, and selenium simultaneously or separately, or performing a selenization process after forming a metallic precursor layer are widely used currently.
  • the CIS based or CIG based light absorbing layer 300 may be formed through a sputtering process using only copper and indium targets or only copper and gallium targets and a selenization process.
  • the light absorbing layer 300 is formed while evaporating copper, indium, gallium, and selenium simultaneously or separately.
  • the bead 350 may be formed including a polymer such PS or PMMA.
  • the beads 350 may be formed to have a diameter of about 30 nm to about 600 nm, and may have different diameters within the diameter range.
  • the beads 350 are thermally treated for about 5 min to about 60 min at a temperature of about 150 °C to about 650 °C, more preferably, about 300 °C to about 500 °C. Due to the thermal treatment, oxygen may be separated from the forming materials 310 of the light absorbing layer 300, i.e., CuO, In2O3, Ga2O3 and selenium, and polymer, i.e., the forming material of the bead 350, may be removed. As the polymer is removed, the bead 350 changes into the processed void 360. As the polymer is removed, some carbon content in the bead 350 may remain.
  • the buffer layer 400 and the high resistance buffer layer 500 are formed on the light absorbing layer 300.
  • a material for forming the buffer layer 400 includes CdS and ZnS, but CdS is relatively excellent in terms of the power generation efficiency of the solar cell.
  • the CdS layer is formed of an n-type semiconductor and may have a low resistance value through doping of In, Ga, and Al.
  • the buffer layer 400 may be deposited and formed through a sputtering process or Chemical Bath Deposition (CBD).
  • CBD Chemical Bath Deposition
  • the window layer 500 is disposed on the buffer layer 400.
  • the window layer 500 is a transparent conductive layer. Additionally, the window layer 500 has a higher resistance than the back electrode layer 200. For example, the window layer 500 may have a resistance, which is about 10 to about 200 times greater than that of the back electrode layer 200.
  • the window layer 500 includes an oxide.
  • the window layer 500 may include a zinc oxide, an indium tin oxide (ITO), or an indium zinc oxide (IZO).
  • the oxide may include a conductive impurity such as Al, Al 2 O 3 , Mg, or Ga.
  • the window layer 500 may include an Al doped zinc oxide (AZO) or a Ga doped zinc oxide (GZO).
  • light scattering is increased due to a light absorbing layer including void so that an amount of light absorbed in a solar cell may be increased.
  • the voids are formed while the light absorbing layer is formed, no additional manufacturing process is required. As a result, it is effective in terms of productivity.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Sustainable Energy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention porte sur une cellule solaire et sur son procédé de fabrication. La cellule solaire comprend : un substrat ; une couche d'électrode arrière sur le substrat ; une couche d'absorption de la lumière sur la couche d'électrode arrière ; une couche tampon sur la couche d'absorption de la lumière ; et une couche de fenêtre sur la couche tampon, la couche d'absorption de la lumière comprenant une pluralité de vides.
EP12768551.9A 2011-04-08 2012-04-05 Cellule solaire et son procédé de fabrication Withdrawn EP2695202A4 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020110032959A KR101220060B1 (ko) 2011-04-08 2011-04-08 태양전지 및 이의 제조방법
PCT/KR2012/002605 WO2012138167A2 (fr) 2011-04-08 2012-04-05 Cellule solaire et son procédé de fabrication

Publications (2)

Publication Number Publication Date
EP2695202A2 true EP2695202A2 (fr) 2014-02-12
EP2695202A4 EP2695202A4 (fr) 2014-10-29

Family

ID=46969702

Family Applications (1)

Application Number Title Priority Date Filing Date
EP12768551.9A Withdrawn EP2695202A4 (fr) 2011-04-08 2012-04-05 Cellule solaire et son procédé de fabrication

Country Status (4)

Country Link
EP (1) EP2695202A4 (fr)
KR (1) KR101220060B1 (fr)
CN (1) CN103597613A (fr)
WO (1) WO2012138167A2 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2016017617A1 (ja) * 2014-07-29 2017-04-27 京セラ株式会社 光電変換装置およびタンデム型光電変換装置ならびに光電変換装置アレイ
JP6864642B2 (ja) * 2018-03-22 2021-04-28 株式会社東芝 太陽電池、多接合型太陽電池、太陽電池モジュール及び太陽光発電システム

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070163637A1 (en) * 2004-02-19 2007-07-19 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from nanoflake particles
WO2011040272A1 (fr) * 2009-09-29 2011-04-07 京セラ株式会社 Dispositif de conversion photoélectrique
WO2011155639A1 (fr) * 2010-06-11 2011-12-15 昭和シェル石油株式会社 Batterie solaire en couches minces
EP2600412A1 (fr) * 2010-07-29 2013-06-05 Kyocera Corporation Dispositif de conversion photoélectrique

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6946597B2 (en) 2002-06-22 2005-09-20 Nanosular, Inc. Photovoltaic devices fabricated by growth from porous template
FR2881881B1 (fr) * 2005-02-04 2007-06-08 Imra Europ Sa Sa Dispositif photovoltaique solide a configuration interpenetree comprenant de nouveaux absorbeurs ou materiaux semi-conducteurs
KR20070044982A (ko) * 2005-10-26 2007-05-02 삼성전자주식회사 이차전지 기능 복합형 전기변색 소자 및 그 제조방법
JP2008047614A (ja) * 2006-08-11 2008-02-28 Showa Shell Sekiyu Kk 吸着材を利用した改良型太陽電池モジュール
US20090078316A1 (en) * 2007-09-24 2009-03-26 Qualcomm Incorporated Interferometric photovoltaic cell

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070163637A1 (en) * 2004-02-19 2007-07-19 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from nanoflake particles
WO2011040272A1 (fr) * 2009-09-29 2011-04-07 京セラ株式会社 Dispositif de conversion photoélectrique
WO2011155639A1 (fr) * 2010-06-11 2011-12-15 昭和シェル石油株式会社 Batterie solaire en couches minces
EP2600412A1 (fr) * 2010-07-29 2013-06-05 Kyocera Corporation Dispositif de conversion photoélectrique

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
MEHTA B R ET AL: "A graded diameter and oriented nanorod-thin film structure for solar cell application: a device proposal", SOLAR ENERGY MATERIALS AND SOLAR CELLS, ELSEVIER SCIENCE PUBLISHERS, AMSTERDAM, NL, vol. 85, no. 1, 1 January 2005 (2005-01-01), pages 107-113, XP027815026, ISSN: 0927-0248 [retrieved on 2005-01-01] *
See also references of WO2012138167A2 *

Also Published As

Publication number Publication date
KR101220060B1 (ko) 2013-01-21
WO2012138167A2 (fr) 2012-10-11
KR20120115036A (ko) 2012-10-17
CN103597613A (zh) 2014-02-19
EP2695202A4 (fr) 2014-10-29
WO2012138167A3 (fr) 2013-01-10

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