EP2597678A3 - Boîtier pour monter des composants électroniques, appareil électronique et procédé de fabrication du boîtier - Google Patents
Boîtier pour monter des composants électroniques, appareil électronique et procédé de fabrication du boîtier Download PDFInfo
- Publication number
- EP2597678A3 EP2597678A3 EP12193921.9A EP12193921A EP2597678A3 EP 2597678 A3 EP2597678 A3 EP 2597678A3 EP 12193921 A EP12193921 A EP 12193921A EP 2597678 A3 EP2597678 A3 EP 2597678A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- package
- leadframe
- heat sink
- manufacturing
- electronic components
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000011347 resin Substances 0.000 abstract 3
- 229920005989 resin Polymers 0.000 abstract 3
- 239000004020 conductor Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/19—Manufacturing methods of high density interconnect preforms
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12035—Zener diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011254899A JP5940799B2 (ja) | 2011-11-22 | 2011-11-22 | 電子部品搭載用パッケージ及び電子部品パッケージ並びにそれらの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
EP2597678A2 EP2597678A2 (fr) | 2013-05-29 |
EP2597678A3 true EP2597678A3 (fr) | 2014-03-05 |
Family
ID=47257550
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP12193921.9A Withdrawn EP2597678A3 (fr) | 2011-11-22 | 2012-11-22 | Boîtier pour monter des composants électroniques, appareil électronique et procédé de fabrication du boîtier |
Country Status (4)
Country | Link |
---|---|
US (1) | US8901580B2 (fr) |
EP (1) | EP2597678A3 (fr) |
JP (1) | JP5940799B2 (fr) |
CN (1) | CN103137575A (fr) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6008582B2 (ja) * | 2012-05-28 | 2016-10-19 | 新光電気工業株式会社 | 半導体パッケージ、放熱板及びその製造方法 |
JP6335619B2 (ja) * | 2014-01-14 | 2018-05-30 | 新光電気工業株式会社 | 配線基板及び半導体パッケージ |
US9142528B2 (en) | 2014-02-12 | 2015-09-22 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Semiconductor device with an interlocking structure |
JP6225812B2 (ja) | 2014-04-18 | 2017-11-08 | 日亜化学工業株式会社 | 発光装置 |
JP6661890B2 (ja) | 2014-05-21 | 2020-03-11 | 日亜化学工業株式会社 | 発光装置 |
US10381293B2 (en) * | 2016-01-21 | 2019-08-13 | Texas Instruments Incorporated | Integrated circuit package having an IC die between top and bottom leadframes |
KR102505443B1 (ko) * | 2017-11-16 | 2023-03-03 | 삼성전기주식회사 | 인쇄회로기판 |
DE102018123031A1 (de) * | 2018-09-19 | 2020-03-19 | Osram Opto Semiconductors Gmbh | Bauelement und herstellungsverfahren für ein bauelement |
JP7367418B2 (ja) * | 2019-09-13 | 2023-10-24 | 富士電機株式会社 | 半導体モジュールおよび車両 |
JP7306294B2 (ja) * | 2020-02-19 | 2023-07-11 | 株式会社デンソー | 半導体モジュール |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001210764A (ja) * | 2000-01-26 | 2001-08-03 | Matsushita Electric Works Ltd | 熱伝導基板及びその製造方法 |
US20020109211A1 (en) * | 2001-02-09 | 2002-08-15 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and method of manufacturing same |
EP1909324A1 (fr) * | 2005-09-27 | 2008-04-09 | Matsushita Electric Industrial Co., Ltd. | Carte de câblage de dissipation thermique, son procédé de fabrication et dispositif électrique employant ladite carte |
US20080298063A1 (en) * | 2007-05-31 | 2008-12-04 | Nichia Corporation | Light emitting apparatus, resin molding device composing light emitting device, method for producing the same |
US20090050908A1 (en) * | 2005-01-10 | 2009-02-26 | Cree, Inc. | Solid state lighting component |
US20100207142A1 (en) * | 2009-02-18 | 2010-08-19 | Chi Mei Lighting Technology Corp. | Light-emitting diode light source module |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10247748A (ja) * | 1997-03-03 | 1998-09-14 | Omron Corp | 発光素子及び当該発光素子を用いた面光源装置 |
JP4261713B2 (ja) * | 1999-12-20 | 2009-04-30 | パナソニック株式会社 | 熱伝導基板とその製造方法 |
KR200373718Y1 (ko) * | 2004-09-20 | 2005-01-21 | 주식회사 티씨오 | 정전기 방전 충격에 대한 보호 기능이 내장된 고휘도발광다이오드 |
JP4757477B2 (ja) | 2004-11-04 | 2011-08-24 | 株式会社 日立ディスプレイズ | 光源ユニット、それを用いた照明装置及びそれを用いた表示装置 |
KR101298225B1 (ko) * | 2005-06-30 | 2013-08-27 | 페어차일드 세미컨덕터 코포레이션 | 반도체 다이 패키지 및 그의 제조 방법 |
JP2008041975A (ja) * | 2006-08-08 | 2008-02-21 | Matsushita Electric Ind Co Ltd | 放熱性配線基板およびその製造方法 |
JP2008085109A (ja) * | 2006-09-28 | 2008-04-10 | Matsushita Electric Ind Co Ltd | 発光ダイオード実装用基板 |
JP2008098488A (ja) * | 2006-10-13 | 2008-04-24 | Matsushita Electric Ind Co Ltd | 熱伝導基板とその製造方法 |
JP2008140954A (ja) * | 2006-12-01 | 2008-06-19 | Matsushita Electric Ind Co Ltd | 放熱配線基板とその製造方法並びにこれを用いた発光モジュール |
JP2008147203A (ja) * | 2006-12-05 | 2008-06-26 | Sanken Electric Co Ltd | 半導体発光装置 |
JP5010716B2 (ja) * | 2010-01-29 | 2012-08-29 | 株式会社東芝 | Ledパッケージ |
KR101543333B1 (ko) * | 2010-04-23 | 2015-08-11 | 삼성전자주식회사 | 발광소자 패키지용 리드 프레임, 발광소자 패키지, 및 발광소자 패키지를 채용한 조명장치 |
JP2012142426A (ja) * | 2010-12-28 | 2012-07-26 | Toshiba Corp | Ledパッケージ及びその製造方法 |
-
2011
- 2011-11-22 JP JP2011254899A patent/JP5940799B2/ja active Active
-
2012
- 2012-11-20 US US13/682,107 patent/US8901580B2/en active Active
- 2012-11-22 CN CN2012104792392A patent/CN103137575A/zh active Pending
- 2012-11-22 EP EP12193921.9A patent/EP2597678A3/fr not_active Withdrawn
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001210764A (ja) * | 2000-01-26 | 2001-08-03 | Matsushita Electric Works Ltd | 熱伝導基板及びその製造方法 |
US20020109211A1 (en) * | 2001-02-09 | 2002-08-15 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and method of manufacturing same |
US20090050908A1 (en) * | 2005-01-10 | 2009-02-26 | Cree, Inc. | Solid state lighting component |
EP1909324A1 (fr) * | 2005-09-27 | 2008-04-09 | Matsushita Electric Industrial Co., Ltd. | Carte de câblage de dissipation thermique, son procédé de fabrication et dispositif électrique employant ladite carte |
US20080298063A1 (en) * | 2007-05-31 | 2008-12-04 | Nichia Corporation | Light emitting apparatus, resin molding device composing light emitting device, method for producing the same |
US20100207142A1 (en) * | 2009-02-18 | 2010-08-19 | Chi Mei Lighting Technology Corp. | Light-emitting diode light source module |
Also Published As
Publication number | Publication date |
---|---|
US8901580B2 (en) | 2014-12-02 |
JP2013110298A (ja) | 2013-06-06 |
US20130126916A1 (en) | 2013-05-23 |
JP5940799B2 (ja) | 2016-06-29 |
EP2597678A2 (fr) | 2013-05-29 |
CN103137575A (zh) | 2013-06-05 |
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