EP2577750A4 - Laser processing for high-efficiency thin crystalline silicon solar cell fabrication - Google Patents
Laser processing for high-efficiency thin crystalline silicon solar cell fabricationInfo
- Publication number
- EP2577750A4 EP2577750A4 EP11787543.5A EP11787543A EP2577750A4 EP 2577750 A4 EP2577750 A4 EP 2577750A4 EP 11787543 A EP11787543 A EP 11787543A EP 2577750 A4 EP2577750 A4 EP 2577750A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- solar cell
- laser processing
- crystalline silicon
- silicon solar
- cell fabrication
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 229910021419 crystalline silicon Inorganic materials 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
- B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
- B23K26/382—Removing material by boring or cutting by boring
- B23K26/389—Removing material by boring or cutting by boring of fluid openings, e.g. nozzles, jets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/16—Composite materials, e.g. fibre reinforced
- B23K2103/166—Multilayered materials
- B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/30—Organic material
- B23K2103/40—Paper
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US34912010P | 2010-05-27 | 2010-05-27 | |
US201113057104A | 2011-02-01 | 2011-02-01 | |
PCT/US2011/038444 WO2011150397A2 (en) | 2010-05-27 | 2011-05-27 | Laser processing for high-efficiency thin crystalline silicon solar cell fabrication |
Publications (2)
Publication Number | Publication Date |
---|---|
EP2577750A2 EP2577750A2 (en) | 2013-04-10 |
EP2577750A4 true EP2577750A4 (en) | 2014-04-09 |
Family
ID=45004886
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP11787543.5A Withdrawn EP2577750A4 (en) | 2010-05-27 | 2011-05-27 | Laser processing for high-efficiency thin crystalline silicon solar cell fabrication |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP2577750A4 (en) |
KR (1) | KR101289787B1 (en) |
WO (1) | WO2011150397A2 (en) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8637340B2 (en) | 2004-11-30 | 2014-01-28 | Solexel, Inc. | Patterning of silicon oxide layers using pulsed laser ablation |
US9508886B2 (en) | 2007-10-06 | 2016-11-29 | Solexel, Inc. | Method for making a crystalline silicon solar cell substrate utilizing flat top laser beam |
US8399331B2 (en) | 2007-10-06 | 2013-03-19 | Solexel | Laser processing for high-efficiency thin crystalline silicon solar cell fabrication |
US9455362B2 (en) | 2007-10-06 | 2016-09-27 | Solexel, Inc. | Laser irradiation aluminum doping for monocrystalline silicon substrates |
AU2012362505B2 (en) * | 2011-12-26 | 2015-08-20 | Solexel, Inc. | Systems and methods for enhanced light trapping in solar cells |
GB2499192A (en) * | 2012-02-02 | 2013-08-14 | Rec Cells Pte Ltd | Method for producing a solar cell with a selective emitter |
JP2015516145A (en) * | 2012-04-02 | 2015-06-08 | ソレクセル、インコーポレイテッド | High efficiency solar cell structure and manufacturing method thereof |
KR20150119262A (en) * | 2013-02-12 | 2015-10-23 | 솔렉셀, 인크. | Monolithically isled back contact back junction solar cells using bulk wafers |
US10553738B2 (en) | 2013-08-21 | 2020-02-04 | Sunpower Corporation | Interconnection of solar cells in a solar cell module |
KR20170025098A (en) | 2015-08-27 | 2017-03-08 | 삼성전자주식회사 | Graphene hole patterning method and method of fabricating graphene transparent electrode using pulse laser |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5348589A (en) * | 1991-12-27 | 1994-09-20 | Semiconductor Energy Laboratory Co., Ltd. | Solar cell and method of forming the same |
US20040261834A1 (en) * | 2001-08-23 | 2004-12-30 | Basore Paul A | Chain link metal interconnect structure |
US20060088984A1 (en) * | 2004-10-21 | 2006-04-27 | Intel Corporation | Laser ablation method |
US20080202576A1 (en) * | 2007-02-16 | 2008-08-28 | Henry Hieslmair | Solar cell structures, photovoltaic panels and corresponding processes |
WO2010135153A2 (en) * | 2009-05-20 | 2010-11-25 | Nanogram Corporation | Back contact solar cells with effective and efficient designs and corresponding patterning processes |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101084067B1 (en) * | 2006-01-06 | 2011-11-16 | 삼성에스디아이 주식회사 | Solar cell and manufacturing method of the same |
US7999175B2 (en) * | 2008-09-09 | 2011-08-16 | Palo Alto Research Center Incorporated | Interdigitated back contact silicon solar cells with laser ablated grooves |
WO2010057060A2 (en) * | 2008-11-13 | 2010-05-20 | Solexel, Inc. | Methods and systems for manufacturing thin-film solar cells |
-
2011
- 2011-05-27 EP EP11787543.5A patent/EP2577750A4/en not_active Withdrawn
- 2011-05-27 WO PCT/US2011/038444 patent/WO2011150397A2/en active Application Filing
- 2011-05-27 KR KR1020127033876A patent/KR101289787B1/en not_active IP Right Cessation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5348589A (en) * | 1991-12-27 | 1994-09-20 | Semiconductor Energy Laboratory Co., Ltd. | Solar cell and method of forming the same |
US20040261834A1 (en) * | 2001-08-23 | 2004-12-30 | Basore Paul A | Chain link metal interconnect structure |
US20060088984A1 (en) * | 2004-10-21 | 2006-04-27 | Intel Corporation | Laser ablation method |
US20080202576A1 (en) * | 2007-02-16 | 2008-08-28 | Henry Hieslmair | Solar cell structures, photovoltaic panels and corresponding processes |
WO2010135153A2 (en) * | 2009-05-20 | 2010-11-25 | Nanogram Corporation | Back contact solar cells with effective and efficient designs and corresponding patterning processes |
Non-Patent Citations (1)
Title |
---|
SONJA HERMANN ET AL: "Picosecond laser ablation of SiO2 layers on silicon substrates", APPLIED PHYSICS A; MATERIALS SCIENCE & PROCESSING, SPRINGER, BERLIN, DE, vol. 99, no. 1, 7 November 2009 (2009-11-07), pages 151 - 158, XP019801369, ISSN: 1432-0630 * |
Also Published As
Publication number | Publication date |
---|---|
WO2011150397A2 (en) | 2011-12-01 |
KR20130027535A (en) | 2013-03-15 |
EP2577750A2 (en) | 2013-04-10 |
KR101289787B1 (en) | 2013-07-26 |
WO2011150397A3 (en) | 2012-04-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP2577750A4 (en) | Laser processing for high-efficiency thin crystalline silicon solar cell fabrication | |
EP2742536A4 (en) | High-efficiency solar photovoltaic cells and modules using thin crystalline semiconductor absorbers | |
EP2409331A4 (en) | Advanced high efficiency crystalline solar cell fabrication method | |
EP2450961A4 (en) | Crystalline silicon type solar cell and process for manufacture thereof | |
GB2484605B (en) | Silicon wafer based structure for heterostructure solar cells | |
EP2518776A4 (en) | Multi-junction compound semiconductor solar cell | |
EP2659518A4 (en) | Laser processing methods for photovoltaic solar cells | |
EP2656397A4 (en) | Method for connecting solar cells | |
EP2669960A4 (en) | Photovoltaic cell module | |
EP2905814A4 (en) | Method for manufacturing crystalline silicon solar cell, method for manufacturing solar cell module, crystalline silicon solar cell, and solar cell module | |
EP2469611A4 (en) | Movable jig for silicon-based thin film solar cell | |
EP2691990A4 (en) | Active backplane for thin silicon solar cells | |
EP3719852B8 (en) | Solar cell | |
EP2468922A4 (en) | Deposition box for silicon-based thin film solar cell | |
ZA201307450B (en) | Thermal storage facility especiallly suitable for concentrating solar power installations | |
PL2685554T3 (en) | Silicon dioxide solar cell | |
EP2403003A4 (en) | Method for manufacturing thin film compound solar cell | |
EP2600419A4 (en) | Solar cell module | |
EP2530731A4 (en) | Sheet for photovoltaic cells | |
EP2700102A4 (en) | Solar cell module structure and fabrication method for preventing polarization | |
EP2612371A4 (en) | Photovoltaic junction for a solar cell | |
EP2682996A4 (en) | Thin film solar cell | |
EP2624306A4 (en) | Process for manufacturing solar cell | |
EP2648225A4 (en) | Solar cell module | |
EP2533297A4 (en) | Solar cell module |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20130102 |
|
AK | Designated contracting states |
Kind code of ref document: A2 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
DAX | Request for extension of the european patent (deleted) | ||
A4 | Supplementary search report drawn up and despatched |
Effective date: 20140306 |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: B23K 26/38 20140101ALI20140228BHEP Ipc: B23K 26/08 20140101ALI20140228BHEP Ipc: H01L 31/0392 20060101ALI20140228BHEP Ipc: H01L 31/0224 20060101ALI20140228BHEP Ipc: H01L 31/042 20140101ALI20140228BHEP Ipc: B23K 26/40 20140101ALI20140228BHEP Ipc: B23K 26/06 20140101ALI20140228BHEP Ipc: H01L 31/068 20120101ALI20140228BHEP Ipc: H01L 31/18 20060101AFI20140228BHEP |
|
17Q | First examination report despatched |
Effective date: 20150519 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20150930 |