EP2551384A1 - Kupferlegierung für ein elektronisches material und herstellungsverfahren dafür - Google Patents

Kupferlegierung für ein elektronisches material und herstellungsverfahren dafür Download PDF

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Publication number
EP2551384A1
EP2551384A1 EP11759455A EP11759455A EP2551384A1 EP 2551384 A1 EP2551384 A1 EP 2551384A1 EP 11759455 A EP11759455 A EP 11759455A EP 11759455 A EP11759455 A EP 11759455A EP 2551384 A1 EP2551384 A1 EP 2551384A1
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EP
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Prior art keywords
less
crystal grains
grain size
copper alloy
balance
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EP11759455A
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English (en)
French (fr)
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EP2551384A4 (de
Inventor
Hiroshi Kuwagaki
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JX Nippon Mining and Metals Corp
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JX Nippon Mining and Metals Corp
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Publication of EP2551384A1 publication Critical patent/EP2551384A1/de
Publication of EP2551384A4 publication Critical patent/EP2551384A4/de
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/34—Pretreatment of metallic surfaces to be electroplated
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/02—Alloys based on copper with tin as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/06—Wires; Strips; Foils
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/06—Wires; Strips; Foils
    • C25D7/0614—Strips or foils

Definitions

  • the present invention relates to copper alloy suitable as an electronic material which is required to have excellent platability, and to a method of manufacture for the same.
  • Copper alloys used in electronics are subjected to plating for functional use, which utilizes physical properties of the plating film itself such as electrical property and magnetic properties. They are also subjected to plating for bonding use for wire bonding or implementation of printed boards.
  • a conductive spring material such as a terminal, connector, switch, relay and the like
  • Ni plating, Cu plating or Sn plating and the like is used for the purpose of improving contact resistance, solderability, mating and demating properties and the like.
  • Ag plating or Cu plating for wire bonding, or solder plating for implementation of a board and the like is used.
  • a plating film is sometimes formed non-uniformly onto the surface ( Figure 2 ).
  • island shaped hollows hereafter, referred to as "island shaped plating" are found in the places where the plating film is thin ( Figure 3 ).
  • Non-uniform plating causes an appearance problem as well as the problem that various functions provided by the plating film cannot be exerted sufficiently.
  • the surface layer of copper alloys produced by, after casting, an appropriate combination of heat treatment, hot rolling, cold rolling and buffing includes a so called “damaged layer” that is different from the inside.
  • the damaged layer is composed of the outermost “Beilby layer” which has an amorphous structure and the "fine crystal layer” which is present inside the Beilby layer.
  • the size of crystal grains becomes larger as they go inside. Consequently, crystal grains come to have the same size as those in the matrix phase.
  • Patent document 1 discloses that nickel plating should be performed after removing the damaged layer (30-40 ⁇ m of thickness) in the surface by an electrolytic etching using aqueous alkaline solutions such as an aqueous solution of caustic soda since the damaged layer inhibits adhesion between the plating film and the base material.
  • aqueous alkaline solutions such as an aqueous solution of caustic soda since the damaged layer inhibits adhesion between the plating film and the base material.
  • Patent document 2 discloses that the damaged layer is removed for the purpose of providing a plated product exhibiting excellent forming workability as its surface is not cracked by bending and the like.
  • a dissolution method using acid such as sulfuric acid, nitric acid, hydrochloric acid, hydrogen peroxide solution, hydrofluoric acid and the like, an electric dissolution method in an electrolyte, a sputtering method, an etching method and the like are mentioned.
  • Patent document 3 describes a copper alloy for electronic components in which a thickness of the damaged layer (amorphous structure or crystal structure with a grain size of 0.2 ⁇ m or less) in the surface layer is controlled to be 0.2 ⁇ m or less for the purpose of providing a copper alloy for electronic components exhibiting excellent platability with no abnormal deposition of plating and no decrease of oxidized film adhesion.
  • the thickness of the damaged layer is an average of measured values at five places for observation, said values being measured at the positions where the damaged layer is the thickest in each visual field of expanded observation. It is described that the damaged layer is removed by chemical dissolving treatment, electrochemical dissolving treatment, and physical treatment such as sputtering. It is described, in the working example, that the damaged layer was removed by immersion into a mixed acid of sulfuric acid and hydrogen peroxide solution, heat treatment in the heating furnace under hydrogen reduction atmosphere and electrolytic dissolution in an aqueous solution containing phosphoric acid.
  • an object of the present invention is to provide a copper alloy for electronic material exhibiting excellent plating uniformity. Further, another object of the present invention is to provide a method of manufacture for such a copper alloy for electronic material.
  • the present inventor studied eagerly in order to solve the problem and found that, rather than completely removing the damaged layer, improvement of plating film uniformity progresses when only Beilby layer is removed from the damaged layer and fine crystal layer is allowed to remain with a certain thickness. Specifically, it has been found that crystal grains having a grain size of at least 0.1 ⁇ m and less than 0.2 ⁇ m contribute to improvement of uniformity of the plating film and it is thus important to leave the layer containing crystal grains of this grain size range at a certain ratio or more with a certain thickness.
  • the present invention provides a copper alloy for use as an electronic material, wherein, when its cross section parallel to a rolling direction is observed by SIM, an area ratio of amorphous structure and crystal grains having a grain size of less than 0.1 ⁇ m at a depth range of 0.5 ⁇ m or less from the surface is 1% or less, and a ratio of the number of crystal grains having a grain size of at least 0.1 ⁇ m and less than 0.2 ⁇ m to the overall number of crystal grains having a grain size of at least 0.1 ⁇ m at a depth range of 0.2-0.5 ⁇ m from the surface is 47.5% or more.
  • a ratio of the number of crystal grains having a grain size of at least 0.1 ⁇ m and less than 0.2 ⁇ m to the overall number of crystal grains having a grain size of at least 0.1 ⁇ m at a depth range of less than 0.2 ⁇ m from the surface is 57.5% or more.
  • the copper alloy for use as an electronic material related to the present invention, is phosphor bronze, titanium copper or Corson alloy.
  • the present invention provides a method of manufacture for a copper alloy for use as an electronic material, comprising:
  • the abrasive used in Step 1 is made of silicon carbide, and the abrasive used in Step 2 is made of aluminum oxide or colloidal silica.
  • the polishing in Step 1 and Step 2 is performed by buffing.
  • the present invention provides a plated product provided with a plating film on a surface of the copper alloy related to the present invention.
  • the plating film contains any one or more of Ni, Sn and Ag.
  • uniformity of the plating film formed on the surface of copper alloy will improve and island shaped plating will decrease.
  • the present invention can be applied to copper alloys with various compositions and there is no particular limitation. However, the present invention can be preferably applied to phosphor bronze, Corson alloy, brass, German silver and titanium copper which are likely to cause the problem of island shaped plating.
  • phosphor bronze means a copper alloy containing copper as a principal ingredient, Sn and smaller amount of P.
  • phosphor bronze has a composition composed of 3.5-11 mass % of Sn, 0.03-0.35 mass % of P, the balance being copper and unavoidable impurities.
  • Corson alloy means a copper alloy which contains an added element which forms a compound with Si (for example, any one or more of Ni, Co and Cr) and deposits as a secondary phase particle in the matrix phase.
  • Corson alloy has a composition composed of 1.0-4.0 mass % of Ni, 0.2-1.3 mass % of Si, the balance being copper and unavoidable impurities.
  • Corson alloy has a composition composed of 1.0-4.0 mass % of Ni, 0.2-1.3 mass % of Si, 0.03-0.5 mass % of Cr, the balance being copper and unavoidable impurities.
  • Corson alloy contains 1.0-4.0 mass % of Ni, 0.2-1.3 mass % of Si, 0.5-2.5 mass % of Co, the balance being copper and unavoidable impurities.
  • Corson alloy contains 1.0-4.0 mass % of Ni, 0.2-1.3 mass % of Si, 0.5-2.5 mass % of Co, 0.03-0.5 mass % of Cr, the balance being copper and unavoidable impurities.
  • Corson alloy contains 0.2-1.3 mass % of Si, 0.5-2.5 mass % of Co, the balance being copper and unavoidable impurities.
  • Corson alloy other element(s) (e.g., Mg, Sn, B, Ti, Mn, Ag, P, Zn, As, Sb, Be, Zr, Al and Fe) can be optionally added. In general, these other element(s) is(are) added up to about 2.0 mass % in total.
  • Corson alloy contains 1.0-4.0 mass % of Ni, 0.2-1.3 mass % of Si, 0.01-2.0 mass % of Sn, 0.01-2.0 mass % of Zn, the balance being copper and unavoidable impurities.
  • brass means an alloy of copper and zinc, especially a copper alloy containing 20 mass % or more of zinc.
  • German silver means a copper alloy containing 60-75 mass % of copper as a principal ingredient, 8.5-19.5 mass % of nickel, and 10-30 mass % of zinc.
  • titanium copper means a copper alloy containing copper as a principal ingredient and 1.0-4.0 mass % of Ti.
  • a titanium copper contains 1.0-4.0 mass % of Ti, the balance being copper and unavoidable impurities.
  • a titanium copper contains 1.0-4.0 mass % of Ti, 0.01-1.0 mass % of Fe, the balance being copper and unavoidable impurities.
  • amorphous structure and fine crystal grains having a grain size of less than 0.1 ⁇ m should be removed because these structures cause "island shaped plating" and thus have a bad influence on the uniformity of the plating film.
  • an area ratio of amorphous structure and crystal grains having a grain size of less than 0.1 ⁇ m at a depth range of 0.5 ⁇ m or less from the surface is 1% or less, preferably 0.5% or less, more preferably 0%.
  • the reason why the depth of 5 ⁇ m or less from the surface is defined is that the deeper portion has little effect on the uniformity of the plating film.
  • the area ratio is measured by the following method. Specifically, a measuring area of 0.5 ⁇ m in depth direction from the surface and 15 ⁇ m in the width direction is set, and then crystal grains having a grain size of 0.1 ⁇ m or more is marked.
  • the marked crystal grains and other structures are distinguished by binarizing with image processing.
  • the area ratio occupied by amorphous structure and the crystal grains having a grain size of less than 0.1 ⁇ m with respect to the entire measuring area in the field of vision is calculated.
  • An average for 5 fields of vision is employed as the measured value.
  • crystal grains having a grain size of 0.1 ⁇ m or more and less than 0.2 ⁇ m should be positively left because they contribute to the increase of the uniformity of the plating film.
  • the grain size within this range belongs to the crystal grains which constitute fine crystal layer and it is therefore desirable to remove them.
  • residual grains are the crystal grains having larger size. Such large crystal grains do not contribute to the uniformity of the plating film.
  • a ratio of the number of crystal grains having a grain size of at least 0.1 ⁇ m and less than 0.2 ⁇ m to the overall number of crystal grains having a grain size of at least 0.1 ⁇ m is 50% or more.
  • This number ratio is preferably higher, e.g., it can be 50-90 %.
  • a preferable number ratio of is 80% or less, and is more preferably 70% or less.
  • a ratio of the number of crystal grains having a grain size of at least 0.1 ⁇ m and less than 0.2 ⁇ m to the overall number of crystal grains having a grain size of at least 0.1 ⁇ m is 60% or more.
  • the number ratio is preferably higher, e.g., it can be 60-90%.
  • the number ratio is preferably 90% or less, more preferably 80% or less.
  • the ratio of the number of crystal grains having a grain size of at least 0.1 ⁇ m and less than 0.2 ⁇ m to the overall number of crystal grains having a grain size of at least 0.1 ⁇ m is measured in each range of depth according to the following procedure.
  • the cross section of a copper alloy to be measured is cut with FIB in a direction parallel to the rolling direction so that a cross section is exposed.
  • the cross section is observed by SIM at a magnification of 8000-15000 times.
  • each grain size of all the crystal grains existing in the field of vision is determined in each of the depth range of less than 0.2 ⁇ m from the surface and the depth range of 0.2-0.5 ⁇ m from the surface.
  • the ratio of the number of crystal grains having a grain size of at least 0.1 ⁇ m and less than 0.2 ⁇ m to the overall number of crystal grains having a grain size of at least 0.1 ⁇ m is then calculated. This is performed for 5 fields of vision in total. A grain which intersects the boundary of the field of vision and can be only partially seen is not counted. The average of 5 fields of vision is employed as the measured value.
  • each grain size of crystal grain is defined as an average of the longest line segment in the depth direction which can traverse within the crystal and the longest line segment in the direction perpendicular to the depth direction.
  • the number ratio is indicated in units of 5% by rounding off the measured value. For example, when the measured value is 47.5% or more and less than 52.5%, the ratio is indicated as 50%. Therefore, when the lower limit is set as 50%, any case where the measured value is 48.2%, 50.0% or 51.2% is included in the scope of the present invention.
  • the copper alloy related to the present invention can be manufactured by producing copper alloy base material having a desired composition by, after casting, combining the conventional means such as heat treatment, hot rolling and cold rolling and then performing a certain surface treatment.
  • degreasing and pickling for cleaning in order to remove grease stains adhered to the surface of the base material.
  • alkaline degreasing, solvent degreasing, and electrolytic degreasing may be mentioned.
  • pickling while there is no particular limitation, a method in which the base material is immersed in a pickling bath containing sulfuric acid for a certain period of time.
  • the surface treatment includes Step 1) polishing a surface of copper alloy base material with an abrasive of count #600-8000 and then Step 2) further polishing with an abrasive having a particle size of 0.01-0.2 ⁇ m.
  • Step 1 aims to form a damaged layer.
  • the damaged layer can be formed somewhat in the conventional process for producing a copper alloy, it is desirable to form the damaged layer with a sufficient thickness through Step 1, for providing the crystal grains having a grain size of at least 0.1 ⁇ m and less than 0.2 ⁇ m in the sufficient depth range.
  • An effective abrasive for forming a damaged layer is of count #600-#8000, preferably #1200-#4000, and more preferably #1500-#3000 as prescribed in JIS6001 (1998).
  • the material of abrasive used in Step 1 includes, but not limited to, silicon carbide, aluminum oxide, diamond and the like. There is no particular limitation for the material provided that it is of said count range.
  • the object of Step 2 is to remove the outermost Beilby layer (corresponding to amorphous structure and fine crystal grain having a grain size of less than 0.1 ⁇ m in the present invention) from the damaged layer prepared in Step 1.
  • An effective particle size of the abrasive for selectively removing Beilby layer from the damaged layer is in the range of 0.01-0.5 ⁇ m, preferably 0.05-0.4 ⁇ m, more preferably 0.1-0.3 ⁇ m in terms of d50 measured by a laser diffraction scattering method.
  • the particle size is greater than 0.1 ⁇ m, crystal grains having a grain size of at least 0.1 ⁇ m and less than 0.2 ⁇ m are also easily removed.
  • the material of abrasive used in Step 2 while there is no particular limitation, aluminum oxide and colloidal silica are preferable because they have a small grain size.
  • the polishing in Step 1 and Step 2 is preferably performed by buffing.
  • buffing means polishing with an abrasive cloth impregnated with an abrasive in the form of paste or suspension (slurry). It does not matter whether buff is rotated or not. However, in order to obtain uniform distribution of crystal grains having a grain size of at least 0.1 ⁇ m and less than 0.2 ⁇ m, it is desirable to rotate the buff at a high speed and to push it against the copper alloy base material under a constant pressure.
  • Acid pickling may be performed between Step 1 and Step 2 in order that only Beilby layer may be easily removed during the second polishing.
  • sulfuric acid preferably sulfuric acid of conc. 10-200 g/L, because when a mixed acid of sulfuric acid and hydrogen peroxide is used, crystal grains having a grain size of at least 0.1 ⁇ m and less than 0.2 ⁇ m are also easily removed.
  • a plating film contains any one or more of Ni, Sn and Ag.
  • the method for plating while there is any particular restriction, for example it can be obtained by a wet process plating such as electroplating and electroless plating, or dry plating such as CVD and PVD. From the point of view of productivity and cost, electroplating is preferable.
  • Copper alloys related to the present invention can be provided as various wrought copper products such as plate, strip, tube, bar and wire and can be preferably used for electronic components such as lead frame, connector, pin, terminal, relay, switch, foil material for a secondary battery.
  • Each copper alloy having a composition indicated in Table 1 was cast. Heat treatment, hot rolling and cold rolling were then repeated appropriately to obtain each copper alloy plate with a thickness of 0.1 mm.
  • Each copper alloy plate was degreased by alkaline degreasing, acid pickled by immersing it in an acid bath containing 100g/L of sulfuric acid, and then subjected to the surface treatment according to the procedure described in Table 1.
  • silicon carbide was used as an abrasive for "Buffing (1)".
  • “Acid Pickling” indicates a process in which a test plate is immersed in 100 g/L sulfuric acid for 10 seconds
  • “Mixed acid” indicates a process in which a test plate is immersed in an aqueous solution containing 100 g/L sulfuric acid and 10 g/L hydrogen peroxide for 10 seconds.
  • silicon carbide was used as an abrasive.
  • the particle size (d50) of the abrasive used in Buffing (2) was determined by using a laser diffraction particle size analyzer SALD-2100 (Shimazu Corporation). With regard to the copper alloy plate after the surface treatment, the followings were measured by using the methods mentioned before:
  • FIG. 1 is a SEM photograph of the plating surface of No. 14.
  • Table 1-1 No Composition (mass%) Buffing(1) Acid Pickling Buffing(2) (grain size) A (%) B (%) C (%) Platability Ni Si Co Cr Sn Zn P Ti Others
  • the damaged layer formed by the first buffing was removed by a strong acid pickling, and therefore, not only Beilby layer, but also crystal grains having a grain size of at least 0.1 ⁇ m and less than 0.2 ⁇ m were excessively removed. As a result, the plating property was inferior to the Examples of the present invention.
  • the damaged layer formed by the first buffing was removed by a strong acid pickling, and further the second buffing was performed, and therefore, not only Beilby layer, but also crystal grains having a grain size of at least 0.1 ⁇ m and less than 0.2 ⁇ m were completely removed. As a result, the plating property was inferior to the Examples of the present invention.
  • Comparative example No. 32 the damaged layer formed by the first buffing was removed by a strong acid pickling, and then buffing was performed in the similar way as the first Buffing. As a result, the properties similar to Comparative example No. 29 was obtained.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Mechanical Engineering (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
EP11759455.6A 2010-03-23 2011-03-23 Kupferlegierung für ein elektronisches material und herstellungsverfahren dafür Withdrawn EP2551384A4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010066397A JP4629154B1 (ja) 2010-03-23 2010-03-23 電子材料用銅合金及びその製造方法
PCT/JP2011/057026 WO2011118650A1 (ja) 2010-03-23 2011-03-23 電子材料用銅合金及びその製造方法

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EP2551384A4 EP2551384A4 (de) 2017-07-19

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EP (1) EP2551384A4 (de)
JP (1) JP4629154B1 (de)
KR (1) KR101335201B1 (de)
CN (1) CN102803574B (de)
MX (1) MX2012010887A (de)
TW (1) TWI429763B (de)
WO (1) WO2011118650A1 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2679341A4 (de) * 2011-03-28 2014-12-24 Jx Nippon Mining & Metals Corp Kupferlegierungsplatte auf co-si-basis
US10092970B2 (en) 2015-01-09 2018-10-09 Jx Nippon Mining & Metals Corporation Titanium-copper alloy having plating layer

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5961371B2 (ja) * 2011-12-06 2016-08-02 Ｊｘ金属株式会社 Ｎｉ−Ｃｏ−Ｓｉ系銅合金板
JP6141708B2 (ja) * 2013-07-09 2017-06-07 三菱伸銅株式会社 光沢度に優れためっき付き銅合金板
JP6085536B2 (ja) * 2013-08-05 2017-02-22 株式会社Ｓｈカッパープロダクツ 銅条、めっき付銅条、リードフレーム及びｌｅｄモジュール
CN105451967B (zh) * 2013-08-14 2017-11-10 三菱化学株式会社 纳米压印用模具的制造方法以及防反射物品
JP6320759B2 (ja) * 2014-01-06 2018-05-09 三菱伸銅株式会社 Ｃｕ−Ｆｅ−Ｐ系銅合金板の製造方法
WO2017038825A1 (ja) * 2015-09-01 2017-03-09 古河電気工業株式会社 耐熱性に優れためっき材及びその製造方法
JP6662685B2 (ja) * 2016-03-31 2020-03-11 Ｊｘ金属株式会社 めっき層を有するチタン銅箔
JP6271626B2 (ja) 2016-03-31 2018-01-31 Ｊｘ金属株式会社 めっき層を有するチタン銅箔
JP2016211078A (ja) * 2016-07-26 2016-12-15 Ｊｘ金属株式会社 Ｃｕ−Ｎｉ−Ｓｉ系合金及びその製造方法
JP6793005B2 (ja) * 2016-10-27 2020-12-02 Ｄｏｗａメタルテック株式会社 銅合金板材およびその製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5516415A (en) * 1993-11-16 1996-05-14 Ontario Hydro Process and apparatus for in situ electroforming a structural layer of metal bonded to an internal wall of a metal tube
JP3550482B2 (ja) 1997-07-09 2004-08-04 三島光産株式会社 連続鋳造に用いる鋳型片のめっき方法
FR2781922B1 (fr) * 1998-07-31 2001-11-23 Clariant France Sa Procede de polissage mecano-chimique d'une couche en un materiau a base de cuivre
JP4001491B2 (ja) * 2001-02-20 2007-10-31 日鉱金属株式会社 高強度チタン銅合金及びその製造法並びにそれを用いた端子・コネクター
JP2006002233A (ja) 2004-06-18 2006-01-05 Furukawa Electric Co Ltd:The 成形加工性に優れた被めっき物
JP2007039804A (ja) * 2005-07-05 2007-02-15 Furukawa Electric Co Ltd:The 電子機器用銅合金及びその製造方法
US7946022B2 (en) * 2005-07-05 2011-05-24 The Furukawa Electric Co., Ltd. Copper alloy for electronic machinery and tools and method of producing the same
JP5128152B2 (ja) * 2007-03-14 2013-01-23 古河電気工業株式会社 ベアボンディング性に優れるリードフレーム用銅合金及びその製造方法
CN100560797C (zh) * 2007-12-28 2009-11-18 天津大学 一种在紫铜表面制备纳米厚度的薄膜表面的方法
US20100316879A1 (en) * 2008-02-08 2010-12-16 Kuniteru Mihara Copper alloy material for electric/electronic components
CN101509850A (zh) * 2009-03-20 2009-08-19 北京科技大学 一种制备电铸铜金相样品及显示组织的方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO2011118650A1 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2679341A4 (de) * 2011-03-28 2014-12-24 Jx Nippon Mining & Metals Corp Kupferlegierungsplatte auf co-si-basis
US10092970B2 (en) 2015-01-09 2018-10-09 Jx Nippon Mining & Metals Corporation Titanium-copper alloy having plating layer

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TWI429763B (zh) 2014-03-11
MX2012010887A (es) 2012-12-17
CN102803574B (zh) 2015-09-02
JP2011195927A (ja) 2011-10-06
JP4629154B1 (ja) 2011-02-09
EP2551384A4 (de) 2017-07-19
TW201139703A (en) 2011-11-16
WO2011118650A1 (ja) 2011-09-29
KR20120114341A (ko) 2012-10-16
KR101335201B1 (ko) 2013-11-29
CN102803574A (zh) 2012-11-28

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