EP2524428B1 - Vorrichtungen und verfahren für eine einstellbare passende netzwerkschalttopologie - Google Patents

Vorrichtungen und verfahren für eine einstellbare passende netzwerkschalttopologie Download PDF

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Publication number
EP2524428B1
EP2524428B1 EP11733465.6A EP11733465A EP2524428B1 EP 2524428 B1 EP2524428 B1 EP 2524428B1 EP 11733465 A EP11733465 A EP 11733465A EP 2524428 B1 EP2524428 B1 EP 2524428B1
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EP
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Prior art keywords
inductor
matching network
shunt
tunable matching
shunt inductor
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Not-in-force
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EP11733465.6A
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English (en)
French (fr)
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EP2524428A2 (de
EP2524428A4 (de
Inventor
Iii Arthur S. Morris
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Wispry Inc
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Wispry Inc
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Publication of EP2524428A4 publication Critical patent/EP2524428A4/de
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks
    • H03H7/383—Impedance-matching networks comprising distributed impedance elements together with lumped impedance elements

Definitions

  • the subject matter disclosed herein relates generally to impedance matching used in electronic devices. More particularly, the subject matter disclosed herein relates to tunable matching networks and circuit topologies for such networks.
  • Each non-grounded capacitor pin in a matching network has a parasitic capacitance to ground.
  • This parasitic capacitance is usually proportional to size of the tunable capacitance, with the parasitic being smaller in higher performance technologies.
  • the various parasitics from all capacitors can contribute to a large total parasitic, which can lead to impaired high frequency performance in widely tunable networks.
  • parasitic capacitance to ground is one of the key barriers to achieving the full capabilities of the network.
  • US4015223 discloses an antenna matching device comprising a directional coupler and, respectively connected, in a prior art manner, to two conjugate ports of the directional coupler, one of which is a high-power port, and the other of which a low-power port, a matching circuit in series with the antenna to be matched, and a matched load.
  • EP1100193 discloses an integrated filter circuit and a method of fabrication, wherein the integrated filter has an input and an output parasitic shunt impedance. Input and output electrical components are coupled to the input and output terminals, respectively, to reduce the input and output parasitic shunt impedances.
  • a method of modifying a tunable matching network according to claim 1 is provided. Further, a tunable matching network according to claim 7 is provided.
  • parasitic capacitance to ground can lead to impaired high frequency performance in widely tunable networks.
  • each terminal of each capacitor has a parasitic to ground of 10% of the maximum value of the capacitor.
  • a network with 4pF for each of the three shunt tunable capacitors and 4 pF of tunable capacitance for the series capacitor has a total parasitic to ground of 2.0 pF (3 x 0.4 pF + 2 x 0.4 pF).
  • the inductors will typically also exhibit some parasitic capacitance to ground.
  • this additional parasitic capacitance adds about 1pF, a total of 3 pF is present in the system. If this network is to be used in a multi-band cellular application, it is generally desirable that high performance be maintained down to at least 800 MHz and in some cases below 700 MHz. For this requirement, the added shunt inductance can be greater than 13 nH (and likely about 20 nH) to keep the LC resonance below this frequency. If more parasitic capacitance is present, smaller inductor values could be used and vice versa.
  • FIGS. 2 , 4 , 6 , and 8 illustrate the behavior of each network topology for typical element values and capacitor parasitics.
  • the baseline matching topologies above are all low-pass circuits with pass bands extending to DC.
  • the available tunable capacitance is about 20pF
  • capacitive parasitics to ground per capacitor pin are about 0.16pF
  • intrinsic capacitor ratios are about 20:1
  • feed inductance at input and output is about 1 nH.
  • a single section PI network is shown in Figure 1 as comprising a first inductor 102, a second inductor 104, and a third inductor 106 connected in series between a first port P1 and a second port P2.
  • first and second ports P1 and P2 can be connected to a source and a load, respectively.
  • Network 100 can also comprise first, second, and third capacitors 108, 110, and 112.
  • One terminal of first capacitor 108 can be connected to a first node N1 between first inductor 102 and second inductor 104, with the other terminal of first capacitor 108 being connected to a local voltage reference (i.e., a ground).
  • third capacitor 112 can be connected to a second node N2 between second inductor 104 and third inductor 106, with the other terminal of third capacitor 112 being connected to a local voltage reference.
  • Second capacitor 110 can be connected in parallel with second inductor 104.
  • second capacitor 110 can be a variable capacitor configured to tune a self-resonant frequency and a reactive impedance of second inductor 102.
  • an inductance value is about 4.3 nH and a tunable capacitor configuration comprises the three capacitors having values of 6, 8, and 6 pF, respectively.
  • a tunable capacitor configuration comprises the three capacitors having values of 6, 8, and 6 pF, respectively.
  • setting the capacitor values to minimum yields the high-frequency transparent setting.
  • the high frequency transparent setting has rolled off significantly at 2.2 GHz due to parasitics.
  • Figure 3 shows a modified single section PI network, generally designated 150, which further comprises a first shunt inductor 120 and a second shunt inductor 122 connected at one end to first port P1 and second port P2, respectively, and at the other end to a ground.
  • First and second shunt inductors 120 and 122 can be connected in any of a variety of ways. Specifically, for example, connecting one or more shunt inductors can comprise connecting an external shunt inductor to the tunable matching network or integrating an internal shunt inductor case with the tunable matching network.
  • first and second shunt inductors 120 and 122 can be selected to maintain acceptable tuning performance for both the desired low and high frequency limits of the matching network.
  • a fourth inductor 114 can be connected in series between second inductor 104 and third inductor 106, with both second inductor 104 and fourth inductor 114 being connected in parallel with second capacitor 110.
  • second capacitor 110 can be a variable capacitor configured to tune a self-resonant frequency of the series combination of second inductor 104 and fourth inductor 114.
  • a fourth capacitor 116 can be connected at one terminal to a third node N3 between second inductor 104 and fourth inductor 114, with the other terminal of fourth capacitor 116 being connected to a local voltage reference.
  • network 200 comprises variable capacitive shunt loads and a bypass capacitor from input to output.
  • second inductor 104 and fourth inductor 114 can be 2.15 nH inductors
  • first and third inductors 102 and 106 can be as small as possible
  • the capacitors can be distributed as 4-0-4-0-4-8 using a common coding scheme (i.e., second capacitor 110 is an 8 pF capacitor, and 108, 112, fourth and capacitor 116 are 4 pF capacitors). If network 200 having this configuration is set to the transparent case, the frequency response graph shown in Figure 6 is obtained.
  • Figure 7 shows a modified distributed LC transmission line network, generally designated 250, in which first and second shunt inductors 120 and 122 (e.g., 10 nH shunt inductors) are again added to both input and output.
  • first and second shunt inductors 120 and 122 e.g., 10 nH shunt inductors
  • the graph in Figure 9 provides a comparison of the power delivered to a network across various frequency bands for three different network configurations.
  • the 'no L' (i.e., no inductor) case is the base matching network design ('TL bypassed') shown in Figure 5 .
  • the tuning capability is limited at high frequencies by fixed parasitic capacitance to ground, which likely arises from both the capacitors themselves and the packaging/inductor.
  • adding shunt inductance at the input and output of the matching network ( Figure 9 shows results for both for 3.6 nH and 4.7 nH shunt inductors) can at least partially compensate for the parasitic capacitance, which can in turn lead to better high frequency performance.
  • ESDs electrostatic discharges
  • One approach to minimizing the effect of ESDs is to make use of filtering in the system such that the ESD voltage developed across the component is greatly reduced.
  • One approach that can be used is a high pass filter, which can include a shunt inductor.
  • the subject matter disclosed hereinabove can have the additional benefit of providing this high-pass characteristic, and thus the concepts discussed herein can greatly improve the ESD survivability of the matching network products.
  • An optimum tunable matching network can further be configured to reach high reactances for correcting poor match conditions at low frequencies and also to achieve high transparency at high frequencies. Achieving this range of capabilities enables a full range of tuning for these frequencies and for all frequencies in between. It is also advantageous to minimize the size and complexity of the network to simplify tuning and minimize physical size and cost. In this regard, adding shunt inductance to the network compensates for some of the parasitic capacitance and enables a wider useful bandwidth for the tuning network.
  • the specifications of first and second shunt inductors 120 and 122 can be selected to maintain acceptable ESD performance.

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  • Filters And Equalizers (AREA)
  • Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
  • Transceivers (AREA)
  • Amplifiers (AREA)

Claims (13)

  1. Verfahren zum Modifizieren eines abstimmbaren Anpassungsnetzes, das zwischen einer zuvor festgelegten Niederfrequenzgrenze und einer zuvor festgelegten Hochfrequenzgrenze betrieben werden kann, wobei das Verfahren umfasst, einen ersten Nebenschlussinduktor (120) und einen zweiten Nebenschlussinduktor (122) mit einem abstimmbaren Anpassungsnetz (150, 250) zu verbinden, das eine effektive parasitische Kapazität zur Erde aufweist, wobei das Verbinden des ersten Nebenschlussinduktors und des zweiten Nebenschlussinduktors Folgendes umfasst:
    Verbinden eines ersten Endes eines ersten Nebenschlussinduktors (120) mit einem Eingang (P1) des abstimmbaren Anpassungsnetzes (150, 250) und Verbinden eines zweiten Endes des ersten Nebenschlussinduktors mit einer Erde; und
    Verbinden eines ersten Endes eines zweiten Nebenschlussinduktors (122) mit einem Ausgang (P2) des abstimmbaren Anpassungsnetzes und Verbinden eines zweiten Endes des zweiten Nebenschlussinduktors mit einer Erde;
    wobei der erste Nebenschlussinduktor und der zweite Nebenschlussinduktor Induktanzwerte haben, die so ausgewählt sind, dass sie die effektive parasitische Kapazität zu Erde reduzieren, wenn an der Hochfrequenzgrenze des abstimmbaren Anpassungsnetzes gearbeitet wird, und dass eine parallele Nebenschluss-LC-Resonanz am Eingang und am Ausgang des abstimmbaren Anpassungsnetzes unterhalb der Niederfrequenzgrenze des abstimmbaren Anpassungsnetzes aufrecht erhalten wird.
  2. Verfahren nach Anspruch 1, wobei das Verbinden des ersten Nebenschlussinduktors und des zweiten Nebenschlussinduktors das Verbinden eines externen Nebenschlussinduktors mit dem abstimmbaren Anpassungsnetz umfasst.
  3. Verfahren nach Anspruch 1, wobei das Verbinden des ersten Nebenschlussinduktors und des zweiten Nebenschlussinduktors das Integrieren eines inneren Nebenschlussinduktors in das abstimmbarer Anpassungsnetz umfasst.
  4. Verfahren nach Anspruch 1, wobei das Verbinden des ersten Nebenschlussinduktors und des zweiten Nebenschlussinduktors mit einem abstimmbaren Anpassungsnetz das Verbinden des ersten Nebenschlussinduktors und des zweiten Nebenschlussinduktors mit einem Netz umfasst, das mindestens einen Induktor (102, 104, 106, 114) und mindestens einen abstimmbaren Kondensator (110) parallel zu dem Induktor umfasst;
    wobei der mindestens eine abstimmbare Kondensator einen Eigenresonanzfrequenz und eine reaktive Impedanz des mindestens einen Induktors abstimmt.
  5. Verfahren nach Anspruch 1, wobei das abstimmbare Anpassungsnetz ausgewählt ist aus der Gruppe bestehend aus PI-, Double PI-, Bypassed PI-, Bypassed Double PI- und Distributed Lumped Inductor Single PI-Topologien.
  6. Verfahren nach Anspruch 1, wobei der erste Nebenschlussinduktor und der zweite Nebenschlussinduktor so ausgewählt werden, dass eine zuvor festgelegte ESD-Leistung für die zuvor festgelegte Niederfrequenzgrenze des Anpassungsnetzes beibehalten wird.
  7. Modifiziertes, abstimmbares Anpassungsnetz, umfassend:
    ein abstimmbares Anpassungsnetz (150, 250), das zwischen einer zuvor festgelegten Niederfrequenzgrenze und einer zuvor festgelegten Hochfrequenzgrenze betrieben werden kann und das eine effektive parasitische Kapazität zur Erde aufweist, einen ersten Nebenschlussinduktor (120), der an einem ersten Ende mit einem Eingang (P1) des abstimmbaren Anpassungsnetzes verbunden ist und an einem zweiten Ende mit einer Erde verbunden ist; und
    einen zweiten Nebenschlussinduktor (122), der an einem ersten Ende mit einem Ausgang (P2) des abstimmbaren Anpassungsnetzes verbunden ist und an einem zweiten Ende mit einer Erde verbunden ist;
    wobei der erste Nebenschlussinduktor und der zweite Nebenschlussinduktor Induktanzwerte haben, die so ausgewählt sind, dass sie die effektive parasitische Kapazität zu Erde kompensieren, wenn an der Hochfrequenzgrenze des abstimmbaren Anpassungsnetzes gearbeitet wird, und dass eine parallele Nebenschluss-LC-Resonanz am Eingang und am Ausgang des abstimmbaren Anpassungsnetzes unterhalb der Niederfrequenzgrenze des abstimmbaren Anpassungsnetzes aufrecht erhalten wird.
  8. Netz nach Anspruch 7, wobei das abstimmbare Anpassungsnetz Folgendes umfasst:
    mindestens einen Induktor (102, 104, 106, 114); und
    mindestens einen abstimmbaren Kondensator (110) parallel zu dem Induktor;
    wobei der mindestens eine abstimmbare Kondensator eine Eigenresonanzfrequenz und eine reaktive Impedanz des mindestens einen Induktors abstimmt.
  9. Netz nach Anspruch 7, wobei das abstimmbare Anpassungsnetz Folgendes umfasst:
    einen ersten Induktor (102), der mit dem Eingang und einem ersten Knoten (N1) gekoppelt ist;
    einen zweiten Induktor (104), der zwischen dem ersten Knoten und einem zweiten Knoten (N3) gekoppelt ist;
    einen ersten Kondensator (108), der zwischen dem erstes Knoten und einem Erdungsknoten gekoppelt ist;
    einen zweiten Kondensator (116), der zwischen dem zweiten Knoten und dem Erdungsknoten gekoppelt ist;
    einen dritten Induktor (114), der zwischen dem zweiten Knoten und einem dritten Knoten (N2) gekoppelt ist;
    einen dritten Kondensator (112), der zwischen dem dritten Knoten und dem Erdungsknoten gekoppelt ist;
    einen vierten Induktor (106), der zwischen dem dritten Knoten und dem Ausgang gekoppelt ist; und
    einen vierten Kondensator (110), der zwischen dem ersten Knoten und dem dritten Knoten gekoppelt ist, wobei der vierte Kondensator ein variabler Kondensator ist und wobei der vierte Kondensator eine Eigenresonanzfrequenz der Reihenkombination des zweiten und des dritten Induktors abstimmt.
  10. Netz nach Anspruch 9, wobei der erste Induktor und der vierte Induktor zu der effektiven parasitischen Kapazität zur Erde beitragen.
  11. Netz nach Anspruch 7, wobei das abstimmbare Anpassungsnetz ausgewählt ist aus der Gruppe bestehend aus PI-, Double PI-, Bypassed PI-, Bypassed Double PI- und Distributed Lumped Inductor Single PI-Topologien.
  12. Netz nach Anspruch 7, wobei der erste Nebenschlussinduktor und der zweite Nebenschlussinduktor extern mit dem abstimmbaren Anpassungsnetz verbunden sind.
  13. Netz nach Anspruch 7, wobei der erste Nebenschlussinduktor und der zweite Nebenschlussinduktor so ausgewählt sind, dass eine zuvor festgelegte ESD-Leistung für die zuvor festgelegte Niederfrequenzgrenze des Anpassungsnetzes beibehalten wird.
EP11733465.6A 2010-01-15 2011-01-14 Vorrichtungen und verfahren für eine einstellbare passende netzwerkschalttopologie Not-in-force EP2524428B1 (de)

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US33607210P 2010-01-15 2010-01-15
PCT/US2011/021357 WO2011088361A2 (en) 2010-01-15 2011-01-14 Tunable matching network circuit topology devices and methods

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EP2524428A2 EP2524428A2 (de) 2012-11-21
EP2524428A4 EP2524428A4 (de) 2013-08-21
EP2524428B1 true EP2524428B1 (de) 2018-03-21

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WO2012024517A1 (en) * 2010-08-18 2012-02-23 Wispry, Inc. Tuning methods for tunable matching networks
CN103562736B (zh) 2011-03-21 2016-04-20 维斯普瑞公司 用于感测并计算负载阻抗的简单且微创的方法及***
US8688063B2 (en) * 2012-03-19 2014-04-01 KAIST (Korea Advanced Institute of Science and Technology) Signal converting apparatus and receiving apparatus for supporting concurrent dual bands in wireless communication system
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EP2974012A4 (de) 2013-03-15 2016-11-23 Wispry Inc Abstimmsysteme, vorrichtungen und verfahren
JP5928433B2 (ja) * 2013-10-25 2016-06-01 株式会社村田製作所 高周波回路モジュール
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WO2017040223A1 (en) 2015-08-28 2017-03-09 Skyworks Solutions, Inc. Tunable notch filter and contour tuning circuit
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US20200076396A1 (en) * 2018-08-29 2020-03-05 Mediatek Singapore Pte. Ltd. Matching network circuit and tuning method thereof
CN109104164A (zh) * 2018-10-16 2018-12-28 深圳飞骧科技有限公司 一种ipd滤波器及其强化滤波架构
CN112821907B (zh) * 2020-12-31 2022-06-21 锐石创芯(深圳)科技股份有限公司 输入阻抗匹配网络和射频前端模组
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WO2011088361A3 (en) 2011-11-03
EP2524428A2 (de) 2012-11-21
US8680940B2 (en) 2014-03-25
CN102823129A (zh) 2012-12-12
US20110175687A1 (en) 2011-07-21
WO2011088361A2 (en) 2011-07-21
CN102823129B (zh) 2015-07-08
EP2524428A4 (de) 2013-08-21

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