EP2495769A2 - Photovoltaikvorrichtung mit Doppelanschluss - Google Patents

Photovoltaikvorrichtung mit Doppelanschluss Download PDF

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Publication number
EP2495769A2
EP2495769A2 EP11176029A EP11176029A EP2495769A2 EP 2495769 A2 EP2495769 A2 EP 2495769A2 EP 11176029 A EP11176029 A EP 11176029A EP 11176029 A EP11176029 A EP 11176029A EP 2495769 A2 EP2495769 A2 EP 2495769A2
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Prior art keywords
doped
type
doped region
region
substrate
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English (en)
French (fr)
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EP2495769A3 (de
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Ming-Jeng Huang
Han-Tu Lin
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AU Optronics Corp
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AU Optronics Corp
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    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687—Multiple junction or tandem solar cells
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    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
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    • H01L31/042—PV modules or arrays of single PV cells
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    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
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    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
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    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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    • Y02E10/00—Energy generation through renewable energy sources
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    • Y02E10/548—Amorphous silicon PV cells

Definitions

  • the present invention relates generally to a photovoltaic device, and more particularly, to a photovoltaic device with at least double junctions.
  • a photovoltaic cell is a solid state device that converts the energy of sunlight into electricity by the photovoltaic effect. Assemblies of photovoltaic cells are used to make photovoltaic modules or solar panels. Due to the growing demand for renewable energy sources, the manufacture of photovoltaic cells has advanced dramatically in recent years. The most common type of photovoltaic cells is configured as a large-area p-n junction made from bulk materials such as crystalline silicon or polycrystalline silicon.
  • FIG. 5 shows schematically a cross sectional view of a conventional photovoltaic cell 500.
  • a single p-n junction is formed between a layer of N-type semiconductor 520 and a P-type semiconductor substrate 510.
  • the layer of N-type semiconductor 520 is formed by ion implantation or surface diffusion of an N-type dopant into the front side of the substrate 510.
  • a depletion or space charge region 550 is formed at the interface where the P-type substrate 510 and the N-type layer 520 meet. In the absence of an external applied voltage, an equilibrium condition is reached when the built-in electric field in the depletion region balances out the diffusion of electrons and holes.
  • a metal electrode 590 is formed on the back side of the substrate 510 and a metal "finger" electrode 570 is formed on the N-type layer 520.
  • the electrodes 590 and 570 are connected to an external load through a wire.
  • the free electrons created in the N-type layer 520 or have been collected by the single p-n junction and swept into the N-type layer 520 may travel through the wire, power the load, and continue through the wire until they reach the P-type substrate where they recombine with holes there. So as to the holes travel through the opposite way to generate the photo-current.
  • Such single-junction photovoltaic cells tend to have a relatively low conversion efficiencies, however, usually no more than 18%. This is because the electrons generate at the P-type neutral region or holes generate at the N-type neutral region were quickly recombined, since they were minority carries. However, only the photons absorbed in depletion region or absorbed in neutral region that within electron's or hole's diffusion length, can contributed as photo-current.
  • the present invention relates to a photovoltaic device with at least double junctions.
  • the photovoltaic device includes a substrate having a first surface and an opposite, second surface, where the substrate has a first doped-type.
  • the photovoltaic device also includes a first doped region in the first surface of the substrate, where the first doped region has a second doped-type, and a polarity of the second doped-type is substantially reversed with a polarity of the first doped-type.
  • the photovoltaic device includes a second doped region in a portion of the first doped region and exposing the other portion of the first doped region, where a polarity of the second doped region is substantially identical to the polarity of the first doped-type.
  • a doped concentration of the second doped region is substantially greater than the doped concentration of the substrate.
  • the first doped region has a depth (or namely thickness) ranging from about 1 micron to about 3 microns.
  • the second doped region has a depth (or namely thickness) ranging from about 0.05 microns to about 0.5 microns.
  • a boundary of the second doped region is contacted with a material of the first doped region and a material of the substrate.
  • the photovoltaic device includes a third doped region in the exposed portion of the first doped region, where a polarity of the third doped region is substantially identical to the polarity of the second doped-type and a doped concentration of the third doped region is substantially greater than a doped concentration of the first doped region.
  • the photovoltaic device also has a first electrode on the third doped region.
  • the photovoltaic device further includes a fourth doped region in the second surface of the substrate, and a second electrode forming on the fourth doped region.
  • a polarity of the fourth doped region is substantially identical to the polarity of the first doped-type, and a doped concentration of the fourth doped region is substantially greater than the doped concentration of the second doped region.
  • the photovoltaic device also includes a first dielectric layer covering on the first surface of the substrate, where the first dielectric layer has a first opening exposed the first electrode.
  • the photovoltaic device further includes a fourth doped region in a portion of the second doped region and exposing the other portion of the second doped region, and a second electrode forming on the fourth doped region, where a polarity of the fourth doped region is substantially identical to the polarity of the first doped-type, and a doped concentration of the fourth doped region is substantially greater than the doped concentration of the second doped region.
  • the photovoltaic may also have a first dielectric layer covering on the first surface of the substrate, where the first dielectric layer has a first opening and a second opening exposed the first electrode and the second electrode, respectively, and a second dielectric layer covering on the second surface of the substrate.
  • the first doped-type is one of N-type and P-type
  • the second doped-type is the other of P-type and N-type
  • first, second, third etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed as a second element, component, region, layer or section without departing from the teachings of the present invention.
  • relative terms such as “lower” or “bottom” and “upper” or “top,” may be used herein to describe one element's relationship to another element as illustrated in the Figures. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation depicted in the Figures. For example, if the device in one of the figures is turned over, elements described as being on the “lower” side of other elements would then be oriented on “upper” sides of the other elements. The exemplary term “lower”, can therefore, encompasses both an orientation of “lower” and “upper,” depending of the particular orientation of the figure.
  • electrode is an electrically conductive layer or film comprising a single-layer structure or a multi-layer structure formed of one or more electrically conductive materials.
  • this invention in one aspect, relates to a photovoltaic device with double junctions.
  • FIG. 1 shows schematically (a) a top view and (b) a cross sectional view of a photovoltaic device 100 according to one embodiment of the present invention.
  • the photovoltaic device 100 includes a substrate 110 having a first surface 111 and an opposite, second surface 112, a first doped region (or namely first doped well) 120 formed in the first surface 111 of the substrate 110, a second doped region (or namely second doped well) 130 in a portion 121 of the first doped region 120 such that the other portion 122 of the first doped region 120 is exposed, a third doped region 160 formed in the exposed portion 122 of the first doped region 120, and a fourth doped region 180 in a portion 131 of the second doped region 130 and exposing the other portion 132 of the second doped region 130.
  • the substrate 110 has a first doped-type having a polarity.
  • the first doped region 120 has a second doped-type having polarity.
  • the polarity of the second doped-type is substantially reversed with the polarity of the first doped-type.
  • the polarity of the second doped region 130 is substantially identical to the polarity of the first doped-type of the substrate 110.
  • the polarity of the third doped region 160 is substantially identical to the polarity of the second doped-type of the first doped region 120 and a doped concentration of the third doped region 160 is substantially greater than a doped concentration of the first doped region 120.
  • the polarity of the fourth doped region 180 is substantially identical to the polarity of the first doped-type of the second doped region 130 and a doped concentration of the fourth doped region 180 is substantially greater than the doped concentration of the second doped region 130.
  • the doped concentration of the second doped region 130 is substantially greater than both of a doped concentration of the substrate 110 and the doped concentration of the first doped region 120.
  • the doped concentration of the third doped region 160 is substantially lower than the doped concentration of the fourth doped region 180.
  • the doped concentration of the third doped region 160 may be substantially equal to the doped concentration of the second doped region 130.
  • the first doped-type is one of N-type and P-type
  • the second doped-type is the other of P-type and N-type.
  • the first doped-type is N-type and then the second doped-type is P-type
  • the first doped-type is P-type
  • the second doped-type is N-type
  • the photovoltaic device 100 also has a first electrode 170 formed on the third doped region 160, and a second electrode 190 formed on the fourth doped region 180.
  • the first doped-type is a P-type
  • the second doped-type is an N-type
  • the photovoltaic device 100 includes a P-type substrate 110, an N-type well 120 formed on the front surface of the P-type substrate 110, and a P+ region 130 formed on the N-type well 120 such that a portion 122 of the N-type well 120 is exposed.
  • the photovoltaic device 100 further includes a first electrode 170 formed on the portion 122 of the N-type well 120 that is exposed, and a second electrode 190 formed on the P+ region 130.
  • the P+ region 130 is a high concentration doping region with a doped concentration that is greater than the doped concentration in the P-type substrate 110.
  • the photovoltaic device 100 has two p-n junctions, one at the interface between the P-type substrate 110 and the N-type well 120, and the other at the interface between the N-type well 120 and the P+ region 130.
  • the photovoltaic device 100 has a larger depletion region per unit surface area.
  • incident light is more likely to be absorbed by electrons in the depletion region.
  • the free electrons created in the depletion region are separated from holes by the built-in electric field in that region and are thus less likely to be combined with holes.
  • the photovoltaic device 100 may afford higher conversion efficiencies than conventional single-junction photovoltaic devices.
  • the P-type substrate 110 may comprise a lightly doped semiconductor material such as silicon, germanium, or compound semiconductors.
  • the materials may be in monocrystalline, polycrystalline, or amorphous form.
  • monocrystalline or polycrystalline silicon wafers are made by wire-sawing block-cast silicon ingots into thin slices of wafers of a depth (or namely thickness) ranging from about 180 microns to about 350 microns.
  • the wafers are usually lightly P-type doped.
  • a surface diffusion or ion implantation of N-type dopants is performed on the front side of the wafer 110 to form the N-type well 120 of a depth (or namely thickness) ranging from about 1 micron to about 3 microns.
  • a mask may be used during the surface diffusion or ion implantation process so that the N-type well 120 of a certain geometry and size may be formed.
  • Typical N-type dopants include group V ions such as arsenic (As) or phosphorus (P) ions.
  • a surface diffusion or ion implantation of P-type dopants is performed on the N-type well 120 to form a P+ region 130 of a depth (or namely thickness) ranging from about 0.05 microns to about 0.5 microns.
  • a mask is used during the second surface diffusion or ion implantation process so that a portion 122 of the N-type well 120 is exposed where the first electrode 170 may be formed thereon.
  • Typical P-type dopants include group III ions, such as boron (B) ions.
  • the P+ region 130 has a higher carrier concentration than the carrier concentration of the P-type substrate 110.
  • a first dielectric passivation layer 150 is formed on the back side of the P-type substrate 110.
  • a second dielectric passivation layer 140 is formed on the P+ region 130, the exposed portion 122 of the N-type well 120 and a portion of the front surface of the P-type substrate 110 uncovered by the N-type well 120 and the P+ region 130 such that the first electrode 170 and the second electrode 190 are exposed.
  • Typical materials for the passivation layers 140 and 150 is single layer or multi-layer structures, one of the materials of the passivation layer 140 and 150 is include inorganic material (such as SiO 2 SiN, SiON, other suitable materials, or the combination thereof), organic material (such as polyimide, poly ester, poly(Methyl Methacrylate), diamond-like carbon (DLC), fluorinated DLC, fluorinated polyimides, parylene-N, parylene-F, benzocyclobutanes, poly(arylene ethers), polytetrafluoroethylene derivatives, poly(naphthalenes), poly(norbornenes), foams of polyimides, organic xerogels and porous PTFE, other suitable materials, or the combination thereof), or the combination thereof.
  • inorganic material such as SiO 2 SiN, SiON, other suitable materials, or the combination thereof
  • organic material such as polyimide, poly ester, poly(Methyl Methacrylate), diamond-like carbon (DLC
  • the first passivation layer 150 and the second passivation layer140 are formed at the same time by oxidation or nitration of the silicon substrate in a furnace.
  • the passivation layers 140 and 150 may comprise HfO 2 or Al 2 O 3 , or other dielectric materials, and may be formed by thin film deposition techniques such as chemical vapor deposition (CVD), atomic layer deposition (ALD).
  • first electrode 170 and the second electrode 190 openings are made in the second passivation layer 140.
  • a heavily doped N+ region 160 is created in the exposed portion 122 of the N-type well 120 by sequentially performing the steps of photolithography, etching, N-type ion implantation, photoresist removal, and rapid thermal processing for dopant activation.
  • the first electrode 170 is then formed on the heavily doped N+ region 160.
  • a heavily doped P++ region 180 is created in the P+ region 130 using similar processes to facilitate the formation of a good ohmic contact between the second electrode 190 and the P+ region 130.
  • One of the first electrode 170 and the second electrode 190 is single layer or multi-layer structures
  • a materials of one of the first electrode 170 and the second electrode 190 is include transparent materials (such as indium tin oxide, aluminum zinc oxide, indium zinc oxide, hafnium oxide, cadmium tin oxide, germanium zinc oxide, other suitable materials, or any combination thereof), non-transparent materials (such as Au, Ag, Al, Cu, Ti, Fe, Mo, Ni, Ta, Sn, Pb, V, alloy thereof, nitride thereof, oxide thereof, oxy-nitride thereof, other suitable materials, or any combination thereof), or any combination thereof.
  • transparent materials such as indium tin oxide, aluminum zinc oxide, indium zinc oxide, hafnium oxide, cadmium tin oxide, germanium zinc oxide, other suitable materials, or any combination thereof
  • non-transparent materials such as Au, Ag, Al, Cu, Ti, Fe, Mo, Ni, Ta, Sn, Pb, V, alloy thereof, nitrid
  • FIG. 2 shows schematically (a) a top view and (b) a cross sectional view of a photovoltaic module 200 according to one embodiment of the present invention.
  • the photovoltaic module 200 includes a plurality of photovoltaic cells 210 spatially arranged as an array with rows and columns. Each photovoltaic cell 210 has a structure that is similar to the photovoltaic device 100 shown in FIG. 1 .
  • a plurality of N-type wells 120 is formed in the P-type substrate 110 by using a mask.
  • each N-type well 120 may have a width of about 1 mm.
  • a plurality of elongated P+ regions 130 is formed, each P+ region 130 overlapping a respective row of N-type wells 120.
  • the plurality of photovoltaic cells 210 is connected to each other in parallel by having a common first electrode 170 and a common second electrode 190 as shown in FIG. 2 .
  • the plurality of photovoltaic cells 210 may be connected to each other in series, or in a combination of serial and parallel connections.
  • a first passivation layer 150 is formed on the back side of the P-type substrate 110.
  • a second passivation layer 140 is formed on the front side of the P-type substrate 110 over the plurality of N-type wells 120 and the plurality of P+ regions 130 and exposing the first electrode 170 and the second electrode 190. Light may incident from either the front side or the back side of the P-type substrate 110.
  • the first doped-type is an N-type
  • the second doped-type is a P-type
  • a photovoltaic device 300 is shown according to another embodiment of the present invention. Similar to the photovoltaic device 100 as shown in FIG. 1 , the photovoltaic device 300 includes a substrate 310 having a first surface 311 and an opposite, second surface 312, a first doped region 320 formed in the first surface 311 of the substrate 310, a second doped region 330 formed in a portion 321 of the first doped region (or namely first doped well) 320 and exposing the other portion 322 of the first doped region 320, and a third doped region 360 formed in the exposed portion 322 of the first doped region 320. However, the photovoltaic device 300 has a fourth doped region 380 formed on in the second surface 312 of the substrate 310.
  • the photovoltaic device 300 also has a first electrode 370 formed on the third doped region 360, and a second electrode 390 formed on the fourth doped region 380.
  • the substrate 310 has a first doped-type having a polarity.
  • the first doped region 320 has a second doped-type having polarity.
  • the polarity of the second doped-type is substantially reversed with the polarity of the first doped-type.
  • the polarity of the second doped region 330 is substantially identical to the polarity of the first doped-type of the substrate 310.
  • the polarity of the third doped region 360 is substantially identical to the polarity of the second doped-type of the first doped region 320 and a doped concentration of the third doped region 360 is substantially greater than a doped concentration of the first doped region 320.
  • the polarity of the fourth doped region 380 is substantially identical to the polarity of the first doped-type of the second doped region 330 and a doped concentration of the fourth doped region 380 is substantially greater than the doped concentration of the substrate 310.
  • the doped concentration of the second doped region 330 is substantially greater than both of a doped concentration of the substrate 310 and the doped concentration of the first doped region 320.
  • the doped concentration of the second doped region 330 is substantially equal to the doped concentration of the fourth doped region 380.
  • the doped concentration of the third doped region 360 may be substantially equal to the doped concentration of the second doped region 330.
  • the first doped-type is one of N-type and P-type
  • the second doped-type is the other of P-type and N-type.
  • the first doped-type is N-type and then the second doped-type is P-type
  • the first doped-type is P-type
  • the second doped-type is N-type
  • the first doped-type is corresponding to a P-type
  • the second doped-type is corresponding to an N-type
  • the photovoltaic device 300 includes a P-type substrate 310, an N-type well 320 formed on the front surface of the P-type substrate 310, and a P+ region 330 formed on the N-type well 320 such that a portion 322 of the N-type well 320 is exposed.
  • the photovoltaic device 300 further includes a first electrode 370 formed on the exposed portion 322 of the N-type well 320, a second electrode 390 formed on the back side of the P-type substrate 310.
  • a heavily doped N+ region 360 in the vicinity of the first electrode 370 facilitates the formation of an ohmic contact between the first electrode 370 and the N-type well 320.
  • a heavily doped P++ layer 380 between the second electrode 390 and the back surface of the P-type substrate 310 facilitates the formation of an ohmic contact between the second electrode 390 and the P-type substrate 310.
  • the second electrode 390 covers the entire back side of the P-type substrate 310.
  • the second electrode 390 is formed on the back side of the P-type substrate 310 in a grid pattern.
  • the photovoltaic device 300 may further include a passivation layer 340 formed on the front side of the P-type substrate 310 over the N-type well 320 and the P+ region 330 and exposing the first electrode 370.
  • the passivation layer 340 is single layer or multi-layer structures, the materials of the passivation layer 340is include inorganic material (such as SiO 2 , SiN, SiON, other suitable materials, or the combination thereof), organic material (such as polyimide, poly ester, poly(Methyl Methacrylate), diamond-like carbon (DLC), fluorinated DLC, fluorinated polyimides, parylene-N, parylene-F, benzocyclobutanes, poly(arylene ethers), polytetrafluoroethylene derivatives, poly(naphthalenes), poly(norbornenes), foams of polyimides, organic xerogels and porous PTFE, other suitable materials, or the combination thereof), or the combination thereof.
  • inorganic material
  • the passivation layer 340 is formed at the same time by oxidation or nitration of the silicon substrate in a furnace.
  • the passivation layers 340 may comprise HfO 2 or Al 2 O 3 , or other dielectric materials, and may be formed by thin film deposition techniques such as chemical vapor deposition (CVD), atomic layer deposition (ALD).
  • One of the first electrode 370 and the second electrode 390 is include transparent materials (such as indium tin oxide, aluminum zinc oxide, indium zinc oxide, hafnium oxide, cadmium tin oxide, germanium zinc oxide, other suitable materials, or any combination thereof), non-transparent materials (such as Au, Ag, Al, Cu, Ti, Fe, Mo, Ni, Ta, Sn, Pb, V, alloy thereof, nitride thereof, oxide thereof, oxy-nitride thereof, other suitable materials, or any combination thereof), or any combination thereof.
  • the second electrode 390 is non-transparent material, so that the light is incident from the front side of the P-type substrate 310.
  • the photovoltaic device 300 may be made from an N-type substrate by forming a P-type well on the front surface of the substrate and an N-type well on the P-type well.
  • FIG. 4 shows schematically (a) a top view and (b) a cross sectional view of a photovoltaic module 400 according to one embodiment of the present invention.
  • the photovoltaic module 400 includes a plurality of photovoltaic cells 410 spatially arranged as an array with rows and columns. Each photovoltaic cell 410 has a structure that is similar to the photovoltaic device 300 shown in FIG. 3 .
  • a plurality of N-type wells 320 is formed in the P-type substrate 310 by using a mask.
  • each N-type well 320 may have a width of about 1 mm.
  • a plurality of elongated P+ regions 330 is formed, each P+ region 330 overlapping a respective row of N-type wells 320.
  • the plurality of photovoltaic cells 410 is connected to each other in parallel by sharing a common first electrode 370 formed on the plurality of N-type wells 320 and a common second electrode 390 formed on the back side of the P-type substrate 310.
  • a passivation layer 340 is formed on the front side of the P-type substrate 310 over the plurality of N-type wells 320 and the plurality of P+ regions 330 and exposing the first electrode 370. Light is incident from the front side of the P-type substrate 310.

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TWI496305B (zh) * 2014-01-10 2015-08-11 Motech Ind Inc 太陽能電池及其製作方法
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CN111509072A (zh) * 2020-03-20 2020-08-07 中国科学院宁波材料技术与工程研究所 新型n型背结设计的硅太阳电池及其制备方法

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TW201238063A (en) 2012-09-16
TWI433332B (zh) 2014-04-01
EP2495769A3 (de) 2013-05-01

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