EP2415076A2 - Pressure support for an electronic circuit - Google Patents

Pressure support for an electronic circuit

Info

Publication number
EP2415076A2
EP2415076A2 EP10713602A EP10713602A EP2415076A2 EP 2415076 A2 EP2415076 A2 EP 2415076A2 EP 10713602 A EP10713602 A EP 10713602A EP 10713602 A EP10713602 A EP 10713602A EP 2415076 A2 EP2415076 A2 EP 2415076A2
Authority
EP
European Patent Office
Prior art keywords
elastic element
component
electrical circuit
circuit
circuit structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP10713602A
Other languages
German (de)
French (fr)
Inventor
Herbert Schwarzbauer
Michael Kaspar
Norbert Seliger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of EP2415076A2 publication Critical patent/EP2415076A2/en
Withdrawn legal-status Critical Current

Links

Classifications

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    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
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Definitions

  • the invention relates to a circuit structure having an electrical circuit with at least one mounted on a substrate electronic, in particular power electronic, component.
  • Power semiconductor chips are typically soldered to metal or metallized ceramic substrates to rapidly dissipate the heat generated during operation to the environment. Frequent temperature changes during operation cause a permanent crack development in the soldering from the edge or the formation of a crack network in the middle underneath
  • the object of the present invention is to provide a circuit structure in which an increased resistance to thermally induced cracks in the solder layer is given.
  • the circuit structure according to the invention has an electrical circuit. This is based on a substrate, which may be, for example, a ceramic substrate with a metallic coating, for example a DCB. Fully metallic substrates or the otherwise known substrates can also be used.
  • the components are preferably to one or more semiconductor devices, in particular power semiconductor devices such as IGBTs.
  • the components are connected on the underside via a solder layer to the substrate.
  • the electrical contact takes place at least partially on the upper side by means of one or more planar
  • the two-dimensional conductor tracks are preferably layers, for example copper-based layers, which have been produced, for example, galvanically on the substrate and on the component (s).
  • the invention further provides that an elastic element is provided on the electrical circuit.
  • the elastic element may be, for example, a layer or a piece, for example consisting of silicone or a silicone adhesive. It is possible that the elastic element has a firm connection to the electrical circuit, for example in the case of a silicone adhesive, or just does not have a firm connection, for example, in an applied silicone piece or an insulating film. Conveniently, the elastic element is electrically insulating.
  • the elastic element becomes pressed on the electrical circuit, so that the pressure exerted thereby acts on the entire component.
  • the - preferably light - pressure on the electrical circuit, especially on the component or components, causes advantageous ensure that the initially described cracks in the layer of solder underneath the component or the components to which the pressure is applied are omitted or closed again. This exploits the fact that the solder below the component or components usually does not become brittle even during operation of the electrical circuit, but rather remains somewhat flowable or creepable. A forming crack is advantageously closed by a pressure caused by the movement of the solder again.
  • the elastic element advantageously ensures a uniform distribution of the force on the component or components.
  • the pressure is in the range less bar, i. for example in the range between 1 and 10 bar. This on the one hand ensures that the pressure is sufficient to prevent cracking. On the other hand, the solder is also not squeezed out of the components.
  • the elastic element laterally at least the size of the component or one of the components, so that for at least one component, a planar pressure is exerted on the entire component, with lateral size is meant the length and width of the component, i. the extent in the plane defined by the substrate.
  • the elastic element is substantially laterally as large as the entire electrical circuit. In other words, the elastic element at least largely covers the entire electrical circuit, so that a pressure is exerted on all components. As a result, the pressure is evenly distributed and prevents cracking in all existing components.
  • the electrical circuit preferably has at least one insulation layer, for example in the form of a structured insulation film. This is, for example, under the flat conductor track and prevents unwanted electrical contacts. Also a stacked construction of several layers of insulation and several layers of flat Conductor tracks is possible here.
  • the insulating layer itself may also be a stacked structure of several individual layers, for example of several insulating films to achieve a desired thickness.
  • the insulation layer is preferably structured in order to obtain, for example, a through-contact of top-side contact surfaces on the components to the planar conductor track.
  • the elastic element is softer than the material of the insulating layer.
  • the device preferably has a largely inelastic pressure piece of, for example, metal, ceramic or plastic, which itself is arranged to exert the force from the elastic element.
  • the elastic element is good heat-conducting.
  • it preferably has a thermal conductivity of at least 1 W / mK. Then, heat generated in the components is dissipated not only down into the substrate but also upwards into the elastic element, thus increasing the total heat dissipated, thus providing improved heat dissipation. This is particularly advantageous for power electronic components with high heat output.
  • the elastic element has a small thickness in order to represent a low thermal resistance for the heat dissipation in, for example, the pressure piece.
  • the pressure piece is also in this case also good heat-conducting, so for example made of metal.
  • the elastic element is designed so that it acts as a heat storage.
  • a sufficient mass so a sufficient thickness is required.
  • the thickness of the elastic element should be at least 3 mm.
  • the elastic element can serve as a heat buffer and thereby mitigate short-term peaks in the heat output of the component or components. As a result, the life of the components is increased.
  • the FIGURE shows an exemplary electrical circuit with a power semiconductor component 4.
  • the power semiconductor component 4 is applied to a DCB copper track 2 by means of a solder layer 3.
  • the DCB copper track 2 itself is part of a DCB substrate, which in this example comprises the DCB copper track 2, which is applied to a ceramic carrier 1.
  • the electrical contacting of the power semiconductor component 4 takes place on the top side by a flat copper conductor track 6.
  • an insulating layer 5 is first provided on the substrate and the power semiconductor component 4.
  • the insulating layer 5 consists in this embodiment of a laminated insulating film.
  • the insulation layer 5 can also be produced elsewhere, for example by known chemical or physical deposition methods.
  • the insulation layer 5 has one or more windows.
  • the windows can be produced by structuring the insulation layer 5 on the electrical circuit, for example by laser ablation. But it is also possible, for example, to laminate an already pre-structured film on the circuit.
  • the planar copper conductor 6 is applied on the insulation layer 5, the planar copper conductor 6 is applied.
  • the planar copper conductor 6 can also be produced in various ways, for example by the known deposition methods. However, it is expedient in the field of power electronics to generate by means of galvanic deposition. This is the best way to provide the necessary thickness for the high currents.
  • the flat copper conductor track 6 is in this embodiment also structured itself, since a plurality of electrical connections must be contacted independently.
  • silicone adhesive layer 7 is present on the flat copper conductor track 6, a silicone adhesive layer 7 is present.
  • the silicone adhesive layer 7 approximately corresponds in length and width to the power semiconductor component
  • the silicone adhesive layer 7 is electrically insulating, but should be designed in this embodiment with a thermal conductivity of 10 W / mK, so for an insulator relatively good thermal conductivity.
  • the thickness of the silicone adhesive layer 7 in this embodiment is approximately
  • a pressure piece 8 made of metal is provided above the silicone adhesive layer 7, a pressure piece 8 made of metal is provided above the silicone adhesive layer 7, a pressure piece 8 made of metal is provided. About this pressure piece 8 a pressure on the underlying silicone adhesive layer 7 is exercised. The pressure is exerted on the pressure piece 8 by a corresponding configuration of the housing for the electrical circuit. The silicone adhesive layer 7 distributes this pressure to the underlying structures, i. via the planar copper conductor track 6 and the insulation layer 5 to the power semiconductor component 4 and, in turn, to the solder layer 3.
  • the solder layer 3 is pressurized.
  • the pressure effect is "light.” It should be such that, on the one hand, cracks are re-closed in the solder layer 3 based on the fact that the solder is also in the finished state of the electrical see circuit a certain, albeit small fluidity reserves. If a temperature change operation leads to the formation of a small crack over time, the solder creeps back into the crack under the influence of the slight pressure and closes it again. Thus, the negative influence of cracks, which usually form elsewhere, is avoided and the lifetime of the entire assembly is significantly increased.
  • the relatively small thickness of the silicone adhesive layer 7 and its high thermal conductivity lead in this embodiment to the fact that a significant amount of waste heat from the power semiconductor device 4 can be dissipated via the silicone adhesive layer 7.
  • the silicone adhesive layer 7 and the pressure piece 8 thus advantageously simultaneously serve as an additional heat sink for the power semiconductor component 4.
  • a second alternative embodiment results when the silicone adhesive layer 7 is designed as a heat buffer.
  • the silicone adhesive layer 7 is expediently made much thicker than in the first exemplary embodiment, for example 3 mm or 5 mm thick.
  • an elastic element made of silicone or another heat-resistant elastic material may be used, but this is not necessarily bonded to the surface of the flat copper conductor 6.
  • the silicone adhesive layer 7 or the element then serve as a heat buffer.
  • An excess of waste heat generated in a short time of the tip line in the power semiconductor device 4 is stored in the element or the silicone adhesive layer 7, and then gradually discharged.
  • the elastic element or the silicone adhesive layer 7 serves to advantageously absorb peaks in the heat generation, which also leads to an increase in the life.

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Abstract

The invention relates to a circuit design comprising an electrical circuit, which comprises at least one electronic component (4) mounted on a substrate (1, 2) and a flat conductor track (6) for electrically contacting the component, an elastic element being provided on the electrical circuit and furthermore a device (8) for applying a force to the elastic element (7) being present such that the elastic element is pressed onto the electrical circuit, thereby preventing cracks from forming in solder (3) under the component.

Description

Beschreibungdescription
Druckunterstützung für eine elektronische SchaltungPressure support for an electronic circuit
Die Erfindung betrifft einen Schaltungsaufbau mit einer elektrischen Schaltung mit wenigstens einem auf einem Substrat angebrachten elektronischen, insbesondere leistungselektronischen, Bauteil.The invention relates to a circuit structure having an electrical circuit with at least one mounted on a substrate electronic, in particular power electronic, component.
Leistungshalbleiterchips werden üblicherweise auf Träger aus Metall oder metallisierter Keramik aufgelötet, um die im Betrieb entstehende Wärme rasch an die Umgebung abführen zu können. Häufige Temperaturwechsel im Betrieb verursachen in der Lötung auf Dauer eine Rissentwicklung vom Rand her oder die Ausbildung eines Rissnetzwerks in der Mitte unter demPower semiconductor chips are typically soldered to metal or metallized ceramic substrates to rapidly dissipate the heat generated during operation to the environment. Frequent temperature changes during operation cause a permanent crack development in the soldering from the edge or the formation of a crack network in the middle underneath
Chip im heißesten Bereich. Dadurch wird wiederum die Wärmeableitung verschlechtert, was zu einer Erhöhung der Temperaturhübe führt und somit die Lebensdauer der Schaltung verkürzt.Chip in the hottest area. As a result, the heat dissipation is deteriorated again, which leads to an increase in the temperature strokes and thus shortens the life of the circuit.
Aufgabe der vorliegenden Erfindung ist es, einen Schaltungsaufbau anzugeben, bei dem eine erhöhte Beständigkeit gegen thermisch bedingte Risse in der Lotschicht gegeben ist.The object of the present invention is to provide a circuit structure in which an increased resistance to thermally induced cracks in the solder layer is given.
Diese Aufgabe wird durch einen Schaltungsaufbau mit den Merk- malen von Anspruch 1 gelöst. Eine weitere Lösung besteht in dem Verfahren mit den Merkmalen von Anspruch 10. Die abhängigen Ansprüche betreffen vorteilhafte Ausgestaltungen des Schaltungsaufbaus .This object is achieved by a circuit structure having the features of claim 1. A further solution consists in the method with the features of claim 10. The dependent claims relate to advantageous embodiments of the circuit structure.
Der erfindungsgemäße Schaltungsaufbau weist eine elektrische Schaltung auf. Diese basiert auf einem Substrat, das beispielsweise ein keramisches Substrat mit einer metallischen Beschichtung, beispielsweise ein DCB, sein kann. Vollmetallische Substrate oder die anderweitig bekannten Substrate kön- nen ebenfalls zum Einsatz kommen.The circuit structure according to the invention has an electrical circuit. This is based on a substrate, which may be, for example, a ceramic substrate with a metallic coating, for example a DCB. Fully metallic substrates or the otherwise known substrates can also be used.
Auf dem Substrat sind ein oder mehrere elektronisch Bauteile aufgebracht. Bei den Bauteilen handelt es sich bevorzugt um ein oder mehrere Halbleiterbauteile, insbesondere um Leistungshalbleiterbauteile wie beispielsweise IGBTs. Die Bauteile sind unterseitig über eine Lotschicht mit dem Substrat verbunden. Die elektrische Kontaktierung erfolgt wenigstens teilweise oberseitig mittels einer oder mehrerer flächigerOn the substrate one or more electronic components are applied. The components are preferably to one or more semiconductor devices, in particular power semiconductor devices such as IGBTs. The components are connected on the underside via a solder layer to the substrate. The electrical contact takes place at least partially on the upper side by means of one or more planar
Leiterbahnen. Die flächigen Leiterbahnen sind dabei bevorzugt Schichten, beispielsweise kupferbasierte Schichten, die beispielsweise galvanisch auf dem Substrat und auf dem oder den Bauteilen erzeugt wurde.Interconnects. The two-dimensional conductor tracks are preferably layers, for example copper-based layers, which have been produced, for example, galvanically on the substrate and on the component (s).
Die Erfindung sieht weiterhin vor, dass auf der elektrischen Schaltung ein elastisches Element vorgesehen ist. Das elastische Element kann beispielsweise eine Schicht oder ein Stück, beispielsweise bestehend aus Silikon oder einem Silikonkle- ber, sein. Dabei ist es möglich, dass das elastische Element eine feste Verbindung zur elektrischen Schaltung aufweist, beispielsweise im Falle eines Silikonklebers, oder aber eben keine feste Verbindung aufweist, beispielsweise bei einem aufgelegten Silikonstück oder einer isolierenden Folie. Zweckmäßigerweise ist das elastische Element elektrisch isolierend.The invention further provides that an elastic element is provided on the electrical circuit. The elastic element may be, for example, a layer or a piece, for example consisting of silicone or a silicone adhesive. It is possible that the elastic element has a firm connection to the electrical circuit, for example in the case of a silicone adhesive, or just does not have a firm connection, for example, in an applied silicone piece or an insulating film. Conveniently, the elastic element is electrically insulating.
Schließlich ist eine Vorrichtung zum Ausüben einer Kraft auf das elastische Element vorhanden. Die Kraft bewirkt, dass das elastische Element auf die elektrische Schaltung aufgedrückt wird.Finally, there is a device for applying a force to the elastic element. The force causes the elastic element to be pressed onto the electrical circuit.
Beim erfindungsgemäßen Verfahren zum Betrieb einer elektrischen Schaltung, die wenigstens ein auf einem Substrat ange- brachtes elektronisches Bauteil sowie ein elastisches Element auf dem Bauteil umfasst, wobei das elastische Element wenigstens so groß ist, dass es auf das gesamte Bauteil überdeckt, wird das elastische Element auf die elektrische Schaltung gedrückt, so dass der dadurch ausgeübte Druck auf das gesamte Bauteil wirkt.In the method according to the invention for operating an electrical circuit which comprises at least one electronic component mounted on a substrate and an elastic element on the component, the elastic element being at least large enough to cover the entire component, the elastic element becomes pressed on the electrical circuit, so that the pressure exerted thereby acts on the entire component.
Der - bevorzugt leichte - Druck auf die elektrische Schaltung, speziell auf das oder die Bauteile, bewirkt vorteil- haft, dass die einleitend beschriebenen Risse in der Lotschicht unterhalb des Bauteils oder der Bauteile, auf die der Druck ausgeübt wird, ausbleiben bzw. wieder verschlossen werden. Dabei wird ausgenutzt, dass das Lot unterhalb des Bau- teils oder der Bauteile gewöhnlich auch im Betrieb der elektrischen Schaltung nicht spröde wird, sondern etwas fließ- oder kriechfähig bleibt. Ein sich ausbildender Riss wird vorteilhaft durch eine vom Druck bewirkte Bewegung des Lots wieder geschlossen. Das elastische Element sorgt dabei vorteil- haft für eine gleichmäßige Verteilung der Kraft auf das oder die Bauteile.The - preferably light - pressure on the electrical circuit, especially on the component or components, causes advantageous ensure that the initially described cracks in the layer of solder underneath the component or the components to which the pressure is applied are omitted or closed again. This exploits the fact that the solder below the component or components usually does not become brittle even during operation of the electrical circuit, but rather remains somewhat flowable or creepable. A forming crack is advantageously closed by a pressure caused by the movement of the solder again. The elastic element advantageously ensures a uniform distribution of the force on the component or components.
Dabei ist es vorteilhaft, wenn der Druck im Bereich weniger bar liegt, d.h. beispielsweise im Bereich zwischen 1 und 10 bar. Dadurch wird einerseits erreicht, dass der Druck ausreichend ist, die Rissbildung zu verhindern. Andererseits wird das Lot aber auch nicht unter den Bauteilen herausgequetscht.It is advantageous if the pressure is in the range less bar, i. for example in the range between 1 and 10 bar. This on the one hand ensures that the pressure is sufficient to prevent cracking. On the other hand, the solder is also not squeezed out of the components.
Vorzugsweise weist das elastische Element lateral wenigstens die Größe des Bauteils oder eines der Bauteile auf, sodass für wenigstens ein Bauteil ein flächiger Druck auf das gesamte Bauteil ausgeübt wird, mit lateraler Größe ist dabei die Länge und Breite des Bauteils gemeint, d.h. die Ausdehnung in der vom Substrat definierten Ebene. Gemäß einer vorteilhaften Ausgestaltung der Erfindung ist das elastische Element im Wesentlichen lateral genauso groß wie die gesamte elektrische Schaltung. Mit anderen Worten überdeckt das elastische Element wenigstens weitgehend die gesamte elektrische Schaltung, so dass ein Druck auf alle Bauteile ausgeübt wird. Hierdurch wird der Druck gleichmäßig verteilt und eine Rissbildung bei allen vorhandenen Bauteilen unterbunden.Preferably, the elastic element laterally at least the size of the component or one of the components, so that for at least one component, a planar pressure is exerted on the entire component, with lateral size is meant the length and width of the component, i. the extent in the plane defined by the substrate. According to an advantageous embodiment of the invention, the elastic element is substantially laterally as large as the entire electrical circuit. In other words, the elastic element at least largely covers the entire electrical circuit, so that a pressure is exerted on all components. As a result, the pressure is evenly distributed and prevents cracking in all existing components.
Vorzugsweise weist die elektrische Schaltung wenigstens eine Isolationsschicht, beispielsweise in Form einer strukturier- ten Isolationsfolie auf. Diese befindet sich beispielsweise unter der flächigen Leiterbahn und verhindert ungewollte elektrische Kontaktierungen. Auch ein gestapelter Aufbau aus mehreren Isolationsschichten und mehreren Lagen von flächigen Leiterbahnen ist hierbei möglich. Die Isolationsschicht selbst kann ebenfalls ein gestapelter Aufbau aus mehreren einzelnen Lagen sein, beispielsweise aus mehreren Isolationsfolien, um eine gewünschte Dicke zu erreichen. Die Isolati- onsschicht ist bevorzugt strukturiert, um beispielsweise eine Durchkontaktierung von oberseitigen Kontaktflächen auf den Bauteilen zu der flächigen Leiterbahn zu erwirken.The electrical circuit preferably has at least one insulation layer, for example in the form of a structured insulation film. This is, for example, under the flat conductor track and prevents unwanted electrical contacts. Also a stacked construction of several layers of insulation and several layers of flat Conductor tracks is possible here. The insulating layer itself may also be a stacked structure of several individual layers, for example of several insulating films to achieve a desired thickness. The insulation layer is preferably structured in order to obtain, for example, a through-contact of top-side contact surfaces on the components to the planar conductor track.
Bevorzugt ist das elastische Element weicher als das Material der Isolationsschicht. Hierdurch wird eine mechanische Überbelastung der Isolationsschicht durch das aufgedrückte elastische Element vermieden. Um wiederum eine gleichmäßige Kraft auf das elastische Element zu bewirken, weist die Vorrichtung bevorzugt ein weitgehend unelastisches Druckstück aus bei- spielsweise Metall, Keramik oder Kunststoff auf, das selbst angeordnet ist, die Kraft aus das elastische Element auszuüben .Preferably, the elastic element is softer than the material of the insulating layer. As a result, a mechanical overloading of the insulation layer is avoided by the pressed-elastic element. In order in turn to bring about a uniform force on the elastic element, the device preferably has a largely inelastic pressure piece of, for example, metal, ceramic or plastic, which itself is arranged to exert the force from the elastic element.
Besonders vorteilhaft ist es, wenn das elastische Element gut wärmeleitend ist. Beispielsweise weist es bevorzugt eine Wärmeleitfähigkeit von wenigstens 1 W/mK auf. Dann wird Wärme, die in den Bauteilen entsteht, nicht nur nach unten in das Substrat, sondern auch nach oben in das elastische Element abgeführt und somit die gesamte abgeführte Wärmeleistung er- höht, also für eine verbesserte Entwärmung gesorgt. Das ist besonders bei leistungselektronischen Bauteilen mit hoher Wärmeabgabe vorteilhaft. Hierbei kann es vorteilhaft sein, wenn das elastische Element eine geringe Dicke aufweist, um für den Wärmeabtransport in beispielsweise das Druckstück ei- nen geringen Wärmewiderstand darzustellen. Weiterhin ist es vorteilhaft, wenn das Druckstück selbst in diesem Fall ebenfalls gut wärmeleitend ist, also beispielsweise aus Metall.It is particularly advantageous if the elastic element is good heat-conducting. For example, it preferably has a thermal conductivity of at least 1 W / mK. Then, heat generated in the components is dissipated not only down into the substrate but also upwards into the elastic element, thus increasing the total heat dissipated, thus providing improved heat dissipation. This is particularly advantageous for power electronic components with high heat output. It may be advantageous if the elastic element has a small thickness in order to represent a low thermal resistance for the heat dissipation in, for example, the pressure piece. Furthermore, it is advantageous if the pressure piece is also in this case also good heat-conducting, so for example made of metal.
Auch ist es sehr vorteilhaft, wenn das elastische Element so ausgestaltet ist, dass es als Wärmespeicher fungiert. Hierzu ist beispielsweise eine ausreichende Masse, also eine ausreichende Dicke erforderlich. Beispielsweise sollte die Dicke des elastischen Elements wenigstens 3 mm betragen. In dieser Ausgestaltung kann das elastische Element als Wärmezwischenspeicher dienen und dadurch kurzfristige Spitzen in der Wärmeabgabe des oder der Bauteile abmildern. Hierdurch wird die Lebensdauer der Bauteile erhöht.Also, it is very advantageous if the elastic element is designed so that it acts as a heat storage. For this purpose, for example, a sufficient mass, so a sufficient thickness is required. For example, the thickness of the elastic element should be at least 3 mm. In this Design, the elastic element can serve as a heat buffer and thereby mitigate short-term peaks in the heat output of the component or components. As a result, the life of the components is increased.
Bevorzugte, jedoch keinesfalls einschränkende Ausführungsbeispiele für die Erfindung werden nunmehr anhand der Zeichnung näher erläutert. Dabei sind die Merkmale schematisiert dargestellt und sich entsprechende Merkmale sind mit gleichen Be- zugszeichen markiert. Die einzige Figur zeigt dabei eine elektrische Schaltung mit einem leistungselektronischen Bauteil.Preferred, but by no means limiting embodiments of the invention will now be explained in more detail with reference to the drawing. The features are shown schematically and corresponding features are marked with the same reference numerals. The single figure shows an electrical circuit with a power electronic component.
Die Figur zeigt eine beispielhafte elektrische Schaltung mit einem Leistungshalbleiterbauelement 4. Das Leistungshalbleiterbauelement 4 ist mittels einer Lotschicht 3 auf einer DCB- Kupferbahn 2 aufgebracht. Die DCB-Kupferbahn 2 selbst ist Teil eines DCB-Substrats, das in diesem Beispiel die DCB-Kupferbahn 2 umfasst, die auf einem keramischen Träger 1 aufgebracht ist.The FIGURE shows an exemplary electrical circuit with a power semiconductor component 4. The power semiconductor component 4 is applied to a DCB copper track 2 by means of a solder layer 3. The DCB copper track 2 itself is part of a DCB substrate, which in this example comprises the DCB copper track 2, which is applied to a ceramic carrier 1.
In diesem Ausführungsbeispiel erfolgt die elektrische Kontak- tierung des Leistungshalbleiterbauelements 4 oberseitig durch eine flächige Kupferleiterbahn 6. Dafür ist auf dem Substrat und dem Leistungshalbleiterbauelement 4 zuerst eine Isolationsschicht 5 vorgesehen. Die Isolationsschicht 5 besteht in diesem Ausführungsbeispiel aus einer auflaminierten isolierenden Folie. Die Isolationsschicht 5 kann jedoch auch anderweitig erzeugt werden, beispielsweise durch bekannte chemi- sehe oder physikalische Abscheidemethoden.In this exemplary embodiment, the electrical contacting of the power semiconductor component 4 takes place on the top side by a flat copper conductor track 6. For this purpose, an insulating layer 5 is first provided on the substrate and the power semiconductor component 4. The insulating layer 5 consists in this embodiment of a laminated insulating film. However, the insulation layer 5 can also be produced elsewhere, for example by known chemical or physical deposition methods.
Um einen elektrischen Kontakt zum Leistungshalbleiterbauelement 4 zu ermöglichen, weist die Isolationsschicht 5 ein oder mehrere Fenster auf. Die Fenster können erzeugt werden durch eine Strukturierung der Isolationsschicht 5 auf der elektrischen Schaltung, beispielsweise durch Laserablation . Es ist aber auch beispielsweise möglich, eine bereits vorstrukturierte Folie auf die Schaltung aufzulaminieren . Auf der Isolationsschicht 5 ist die flächige Kupferleiterbahn 6 aufgebracht. Die flächige Kupferleiterbahn 6 kann ebenfalls auf verschiedene Arten erzeugt werden, beispielsweise durch die bekannten Abscheidemethoden. Zweckmäßig im Bereich der Leistungselektronik ist jedoch ein Erzeugen mittels galvanischer Abscheidung. Damit kann am besten die für die hohen Ströme nötige Dicke bereitgestellt werden. Die flächige Kupferleiterbahn 6 ist in diesem Ausführungsbeispiel selbst ebenfalls strukturiert, da eine Mehrzahl on elektrischen Anschlüssen unabhängig kontaktiert werden muss.In order to enable electrical contact to the power semiconductor component 4, the insulation layer 5 has one or more windows. The windows can be produced by structuring the insulation layer 5 on the electrical circuit, for example by laser ablation. But it is also possible, for example, to laminate an already pre-structured film on the circuit. On the insulation layer 5, the planar copper conductor 6 is applied. The planar copper conductor 6 can also be produced in various ways, for example by the known deposition methods. However, it is expedient in the field of power electronics to generate by means of galvanic deposition. This is the best way to provide the necessary thickness for the high currents. The flat copper conductor track 6 is in this embodiment also structured itself, since a plurality of electrical connections must be contacted independently.
Auf der flächigen Kupferleiterbahn 6 ist eine Silikonkleberschicht 7 vorhanden. Die Silikonkleberschicht 7 entspricht in Länge und Breite ungefähr dem LeistungshalbleiterbauelementOn the flat copper conductor track 6, a silicone adhesive layer 7 is present. The silicone adhesive layer 7 approximately corresponds in length and width to the power semiconductor component
4. Die Silikonkleberschicht 7 ist elektrisch isolierend, soll aber in diesem Ausführungsbeispiel mit einer Wärmeleitfähigkeit von 10 W/mK ausgestaltet sein, also für einen Isolator verhältnismäßig gut wärmeleitend. Die Dicke der Silikonkle- berschicht 7 beträgt in diesem Ausführungsbeispiel ca.4. The silicone adhesive layer 7 is electrically insulating, but should be designed in this embodiment with a thermal conductivity of 10 W / mK, so for an insulator relatively good thermal conductivity. The thickness of the silicone adhesive layer 7 in this embodiment is approximately
0,5 mm. Oberhalb der Silikonkleberschicht 7 ist ein Druckstück 8 aus Metall vorgesehen. Über dieses Druckstück 8 wird ein Druck auf die darunterliegende Silikonkleberschicht 7 ausgeübt. Der Druck wird dabei auf das Druckstück 8 durch eine entsprechende Ausgestaltung des Gehäuses für die elektrische Schaltung ausgeübt. Die Silikonkleberschicht 7 verteilt diesen Druck auf die darunterliegenden Strukturen, d.h. über die flächige Kupferleiterbahn 6 und die Isolationsschicht 5 auf den Leistungshalbleiterbauelement 4 und darüber wiederum auf die Lotschicht 3.0.5 mm. Above the silicone adhesive layer 7, a pressure piece 8 made of metal is provided. About this pressure piece 8 a pressure on the underlying silicone adhesive layer 7 is exercised. The pressure is exerted on the pressure piece 8 by a corresponding configuration of the housing for the electrical circuit. The silicone adhesive layer 7 distributes this pressure to the underlying structures, i. via the planar copper conductor track 6 and the insulation layer 5 to the power semiconductor component 4 and, in turn, to the solder layer 3.
Letztlich wird also die Lotschicht 3 unter Druck gesetzt. Dieser Druck ist „leicht". Er sollte zweckmäßig so sein, dass einerseits entstehende Risse in der Lotschicht 3 wieder ge- schlössen werden. Andererseits sollte er nicht so stark sein, dass unter seiner Wirkung das Lot unter dem Leistungshalbleiterbauelement 4 herausgedrückt wird. Die Druckwirkung beruht darauf, dass das Lot auch im fertigen Zustand der elektri- sehen Schaltung eine gewisse, wenn auch kleine Fließfähigkeit behält. Führt nun ein Temperaturwechselbetrieb im Laufe der Zeit dazu, dass sich ein kleiner Riss ausbildet, so kriecht das Lot unter dem Einfluss des leichten Drucks wieder in den Riss zurück und schließt diesen wieder. Somit wird der negative Einfluss der Risse, die sich anderweitig üblicherweise bilden, vermieden und die Lebensdauer der gesamten Baugruppe deutlich erhöht.Ultimately, therefore, the solder layer 3 is pressurized. On the other hand, it should not be so strong that, under its effect, the solder is forced out below the power semiconductor component 4. The pressure effect is "light." It should be such that, on the one hand, cracks are re-closed in the solder layer 3 based on the fact that the solder is also in the finished state of the electrical see circuit a certain, albeit small fluidity reserves. If a temperature change operation leads to the formation of a small crack over time, the solder creeps back into the crack under the influence of the slight pressure and closes it again. Thus, the negative influence of cracks, which usually form elsewhere, is avoided and the lifetime of the entire assembly is significantly increased.
Die verhältnismäßig geringe Dicke der Silikonkleberschicht 7 und ihre hohe Wärmeleitfähigkeit führen in diesem Ausführungsbeispiel dazu, dass eine erhebliche Menge an Abwärme aus dem Leistungshalbleiterbauelement 4 über die Silikonkleberschicht 7 abgeführt werden kann. Die Silikonkleberschicht 7 und das Druckstück 8 dienen also in vorteilhafter Weise gleichzeitig als zusätzliche Wärmesenke für das Leistungshalbleiterbauelement 4.The relatively small thickness of the silicone adhesive layer 7 and its high thermal conductivity lead in this embodiment to the fact that a significant amount of waste heat from the power semiconductor device 4 can be dissipated via the silicone adhesive layer 7. The silicone adhesive layer 7 and the pressure piece 8 thus advantageously simultaneously serve as an additional heat sink for the power semiconductor component 4.
Eine zweite Ausführungsalternative ergibt sich, wenn die Si- likonkleberschicht 7 als Wärmepuffer ausgestaltet ist. Hierfür wird zweckmäßig die Silikonkleberschicht 7 sehr viel dicker als im ersten Ausführungsbeispiel ausgestaltet, beispielsweise 3 mm oder 5 mm dick. Alternativ zur Silikonkleberschicht 7 kann hierbei auch ein in der Figur nicht gezeig- tes elastisches Element aus Silikon oder einem anderen wärmebeständigen elastischen Material verwendet werden, das aber nicht unbedingt verklebt ist mit der Oberfläche der flächigen Kupferleiterbahn 6. die Silikonkleberschicht 7 oder das Element dienen dann als Wärmezwischenspeicher. Ein Überschuss an Abwärme, die in einer kurzen Zeit der Spitzenleitung im Leistungshalbleiterbauelement 4 entsteht, wird im Element oder der Silikonkleberschicht 7 gespeichert und dann nach und nach abgeführt. In dieser Alternative dient also das elastische Element oder die Silikonkleberschicht 7 dazu, vorteilhaft Spitzen in der Abwärmeerzeugung aufzufangen, was ebenfalls zu einer Erhöhung der Lebensdauer führt. A second alternative embodiment results when the silicone adhesive layer 7 is designed as a heat buffer. For this purpose, the silicone adhesive layer 7 is expediently made much thicker than in the first exemplary embodiment, for example 3 mm or 5 mm thick. As an alternative to the silicone adhesive layer 7, an elastic element made of silicone or another heat-resistant elastic material, not shown in the figure, may be used, but this is not necessarily bonded to the surface of the flat copper conductor 6. The silicone adhesive layer 7 or the element then serve as a heat buffer. An excess of waste heat generated in a short time of the tip line in the power semiconductor device 4 is stored in the element or the silicone adhesive layer 7, and then gradually discharged. In this alternative, therefore, the elastic element or the silicone adhesive layer 7 serves to advantageously absorb peaks in the heat generation, which also leads to an increase in the life.

Claims

Patentansprüche claims
1. Schaltungsaufbau mit einer elektrischen Schaltung, die wenigstens ein auf einem Substrat mittels einer Lotschicht angebrachtes elektronisches Bauteil (4) und wenigstens eine flächige Leiterbahn (6) zur elektrischen Kontaktierung des Bauteils (4) um- fasst, wobei die flächige Leiterbahn (6) wenigstens in Teilen auf vom Substrat abgekehrten Seite des Bauteils (4) verläuft, sowie einem auf der elektrischen Schaltung vorgesehenen elastischen Element (7), einer Vorrichtung (8) zum Ausüben einer Kraft auf das elastische Element (7), sodass das elastische Element (7) auf die elektrische Schaltung gedrückt wird.1. Circuit structure comprising an electrical circuit which comprises at least one electronic component (4) mounted on a substrate by means of a solder layer and at least one planar conductor track (6) for electrical contacting of the component (4), the planar conductor track (6) extends at least in part on the side facing away from the substrate side of the component (4), as well as provided on the electrical circuit elastic element (7), a device (8) for exerting a force on the elastic element (7), so that the elastic element ( 7) is pressed onto the electrical circuit.
2. Schaltungsaufbau gemäß Anspruch 1, bei dem das elastische Element (7) wenigstens in Teilen aus Silikon oder Silikonkleber besteht.2. Circuit structure according to claim 1, wherein the elastic element (7) consists at least in part of silicone or silicone adhesive.
3. Schaltungsaufbau gemäß Anspruch 1 oder 2, bei dem das elastische Element (7) lateral wenigstens die Größe des Bauteils (4) aufweist.3. Circuit structure according to claim 1 or 2, wherein the elastic element (7) laterally at least the size of the component (4).
4. Schaltungsaufbau gemäß einem der vorangehenden Ansprüche, bei dem das elastische Element (7) lateral im Wesentlichen die Größe der elektrischen Schaltung aufweist.4. Circuitry according to one of the preceding claims, in which the elastic element (7) laterally has substantially the size of the electrical circuit.
5. Schaltungsaufbau gemäß einem der vorangehenden Ansprüche, bei dem die Vorrichtung (8) ein Druckstück (8) aus Metall,5. Circuitry according to one of the preceding claims, in which the device (8) comprises a pressure piece (8) made of metal,
Keramik oder Kunststoff aufweist, das oberhalb des elastischen Elements (7) vorgesehen ist.Ceramic or plastic, which is provided above the elastic member (7).
6. Schaltungsaufbau gemäß einem der vorangehenden Ansprüche, bei dem die Schaltung unter der flächigen Leiterbahn (6) eine6. Circuit structure according to one of the preceding claims, wherein the circuit under the flat conductor track (6) a
Isolationsschicht (5) aufweist. Insulation layer (5).
7. Schaltungsaufbau gemäß Anspruch 6, bei dem das elastische Element (7) weicher als die Isolationsschicht (5) ist.7. A circuit structure according to claim 6, wherein the elastic element (7) is softer than the insulating layer (5).
8. Schaltungsaufbau gemäß einem der vorangehenden Ansprüche, bei dem das elastische Element (7) eine Wärmeleitfähigkeit von wenigstens 1 W/mK aufweist.8. Circuit structure according to one of the preceding claims, wherein the elastic element (7) has a thermal conductivity of at least 1 W / mK.
9. Schaltungsaufbau gemäß einem der vorangehenden Ansprüche, bei dem das elektronische Bauteil (4) ein Leistungshalblei- terbauelement (4) ist.9. Circuit structure according to one of the preceding claims, wherein the electronic component (4) is a Leistungshalblei- terbauelement (4).
10. Verfahren zum Betrieb einer elektrischen Schaltung, die wenigstens ein auf einem Substrat mittels einer Lotschicht angebrachtes elektronisches Bauteil (4) sowie ein elastisches Element (7) auf dem Bauteil (4) umfasst, wobei das elastische Element (7) wenigstens so groß ist, dass es das gesamte Bauteil (4) überdeckt, wobei das elastische Element (7) auf die elektrische Schaltung gedrückt wird, so dass der dadurch ausgeübte Druck auf das gesamte Bauteil (4) wirkt. 10. A method of operating an electrical circuit comprising at least one mounted on a substrate by means of a solder layer electronic component (4) and an elastic element (7) on the component (4), wherein the elastic element (7) is at least as large in that it covers the entire component (4), the elastic element (7) being pressed onto the electrical circuit so that the pressure exerted thereby acts on the entire component (4).
EP10713602A 2009-04-01 2010-03-30 Pressure support for an electronic circuit Withdrawn EP2415076A2 (en)

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DE102009015757A DE102009015757A1 (en) 2009-04-01 2009-04-01 Pressure support for an electronic circuit
PCT/EP2010/054147 WO2010112478A2 (en) 2009-04-01 2010-03-30 Pressure support for an electronic circuit

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JP2012523109A (en) 2012-09-27
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WO2010112478A2 (en) 2010-10-07
CN102365734B (en) 2015-08-19
CN102365734A (en) 2012-02-29
WO2010112478A3 (en) 2011-08-11
DE102009015757A1 (en) 2010-10-14
US20120075826A1 (en) 2012-03-29

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