EP2410768B1 - Akustischer Druckimpuls-Generator vom Typ MEMS - Google Patents

Akustischer Druckimpuls-Generator vom Typ MEMS Download PDF

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Publication number
EP2410768B1
EP2410768B1 EP11174599.8A EP11174599A EP2410768B1 EP 2410768 B1 EP2410768 B1 EP 2410768B1 EP 11174599 A EP11174599 A EP 11174599A EP 2410768 B1 EP2410768 B1 EP 2410768B1
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EP
European Patent Office
Prior art keywords
substrate
cavity
plane
deformable
comb
Prior art date
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Not-in-force
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EP11174599.8A
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English (en)
French (fr)
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EP2410768A1 (de
Inventor
Philippe Robert
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/0292—Electrostatic transducers, e.g. electret-type
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R17/00—Piezoelectric transducers; Electrostrictive transducers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R23/00—Transducers other than those covered by groups H04R9/00 - H04R21/00
    • H04R23/002—Transducers other than those covered by groups H04R9/00 - H04R21/00 using electrothermic-effect transducer
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00—Details of transducers, loudspeakers or microphones
    • H04R1/005—Details of transducers, loudspeakers or microphones using digitally weighted transducing elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
    • H04R2201/003—Mems transducers or their use
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R2400/00—Loudspeakers

Definitions

  • the invention relates to a pressure pulse generator of the MEMS and / or NEMS type.
  • MEMS speakers There are two approaches to making MEMS speakers: a conventional approach, analog speaker type, and another approach, type digital speaker.
  • the analog speakers consist of a membrane powered by electromagnetic, electrostatic, or piezoelectric means, at the frequency of the sound that it is desired to restore.
  • the sound volume restored will be proportional to the amplitude of displacement of the membrane.
  • FIG 1A is represented the structure of a generator, as explained by J. Rehder et al. in «Balance membrane micromachined loudspeaker for hearing instrument application "- J. Micromech. Microeng. 11, 2001, 334-338 .
  • This generator comprises substrate means 1 made of soft magnetic material, electrodeposited cores, means 3 forming electrical contacts, coils 4 and permanent magnets 5. The sound produced exits through an outlet 6.
  • Reference 7 designates a membrane made of material nonmagnetic amagnetic, and the reference 8 means forming a spacer.
  • the bass reproduction (which requires a greater range of motion to compensate for the drop in sound level induced by the drop in frequency, the sound level being directly proportional to the frequency) is almost impossible with acceptable levels.
  • a second approach, much less conventional, called “digital speaker” uses, as represented in Figure 1B a network 10 of membranes 10 1 , 10 2 , 10 3 , ... 10 n , addressed individually and each generating an acoustic pressure pulse. The sound is then rebuilt by adding these "bits" of pressure. The amplitude of the vibration is then determined by the number of membranes addressed at the same time, and the restored frequency is determined by the variation of this amplitude as a function of time.
  • the suspended diaphragm is actuated by electrostatic means of gap variation type.
  • This membrane can be electrostatically actuated in only one direction to generate a pressure pulse (or depression).
  • a pressure pulse or depression
  • the simple mechanical relaxation of the membrane to generate a reverse pulse in depression (or pressure) makes it almost impossible to generate identical pulses in pressure and depression.
  • CMUTs Capacitive micromachined ultrasonic transducers
  • cMUTs have very limited pressure levels. This limitation is due, in particular, to the low amplitudes of vibration accessible for each of the membranes of the cMUT. This maximum amplitude of vibration comes from a compromise between the value of the gap between the membrane and the excitation electrode (hence the "pull-in"), the maximum allowed voltage (less than 100V for safety reasons) and the breakdown voltage in the insulation oxide.
  • the invention therefore relates to a generator structure, for example of the MEMS and / or NEMS type, where a mobile or deformable wall or membrane moves in the plane of a substrate, and not out of plane as is the case in known structures of the prior art.
  • the actuating or exciting portion for example of the capacitive type or of the thermal excitation type, is thus decorrelated of the mobile or deformable wall or membrane.
  • the actuating or exciting portion for example of the capacitive type or of the thermal excitation type, is thus decorrelated of the mobile or deformable wall or membrane.
  • the actuating means can be used to actuate a displacement or a deformation of the wall or the mobile membrane or deformable in both directions (in pressure and depression).
  • a device according to the invention may further comprise at least one secondary cavity, or buffer cavity, partly in communication with the first cavity.
  • the first cavity is not in “direct” communication with the second cavity, but “indirect” communication nevertheless exists, for example via one or gaps (“gap”, also called “gap") between the first and the second substrate and / or between the first substrate and a third substrate, for example still at certain edges of the wall or the deformable membrane.
  • This second cavity makes it possible to avoid excessive damping of a movement or displacement of the pressure generating means in the plane of the sensor during the actuation of the wall (or of the membrane).
  • the "gap" can be a thin space between the mobile part and the fixed part. It is for example between the substrate and the mobile or deformable part or between the movable or deformable part and the upper substrate. In addition to its pressure drop function, this space allows the mobile or deformable part to move in the plane.
  • this second cavity forming what is called a "back-volume” can be optimized separately from the portion forming means of activation or excitation.
  • This second cavity makes it possible to limit the damping of the mobile or deformable wall or membrane by limiting the gas compression effect in this "back-volume” compression that would limit the efficiency of the pressure generator. It is indeed sought to create an overpressure (or a depression) in the first cavity, but not outside this cavity (especially not in the "back-volume”).
  • At least one secondary cavity may be made in the plane of a second substrate different from the first substrate, or may be made in the plane of the first substrate.
  • the at least one second cavity can be open or closed, it can be made on the top or the bottom of the device, but it is not open, or does not communicate with the ambient atmosphere on the same side as the first cavity. If it is closed, its closure can be provided by a flexible membrane. In the case where this second cavity is closed, its volume is preferably large enough to fully play the role of "back-volume" (typically its volume is then 10 times greater than the volume of the first cavity). In this case, this second cavity (closed) may be located on one side or the other of the first cavity or the first substrate in which this first cavity is made.
  • the invention makes it possible to control the rising edge and the falling edge of the movable or deformable wall or membrane, both for the pulses under pressure and for the pulses under vacuum.
  • the actuating means may comprise capacitive type means or thermal excitation type, for example by bimorph or asymmetric effect.
  • the invention solves the problem of the amplitude of deformation of the nonlinear membrane as a function of the applied voltage. . This also contributes to effective control of the rising and falling edge of each pressure or vacuum pulse.
  • Capacitive-type means as actuating means make it possible to have a good linearity of response (measured for example by the ratio between the voltage applied to the actuating means and the displacement amplitude of the membrane) and therefore of ability to easily control the shape of a pressure pulse induced in the cavity.
  • Capacitive type means may be provided with at least a first set of electrostatic combs, itself having a first comb, movable in the plane of the sensor and a second fixed comb, the teeth of the first comb and those of the second comb. being alternated, and means for applying an activation voltage to move the moving comb relative to the fixed comb.
  • a device may comprise first activation means, and second activation means, arranged on one side and else of the first deformable cavity in the plane of the first substrate. These two sets of means make it possible to actuate the mobile or deformable wall in two opposite directions.
  • a device according to the invention may comprise several actuation assemblies arranged in the plane of the device around the deformable cavity. It is thus possible to carry out activations of the mobile or deformable wall or walls in more complex patterns, for example an actuation assembly operating in compression of the deformable cavity, while another actuation assembly operates in depression of the cavity. deformable.
  • a device according to the invention may comprise several first deformable cavities, at least two of these cavities having common activation means.
  • the means for transmitting at least one pressure or vacuum pulse, produced in the first cavity, to the ambient atmosphere, or for communicating the first cavity with an ambient atmosphere may comprise a single opening for each deformable cavity, for example disposed opposite each deformable cavity, or a membrane disposed on or opposite said deformable cavity.
  • At least one movable or deformable wall has two lateral ends, and is recessed or fixed at its two lateral ends. Alternatively, it is rigid, and maintained at its two lateral ends by deformable elements.
  • a device according to the invention may further comprise means forming an electrical contact, on a first face (so-called front face) or on a second face (so-called rear face).
  • a method according to the invention may further comprise producing, at least in part in a second substrate, at least one secondary cavity, called “back volume” or buffer cavity, partly in communication with the first cavity.
  • At least one secondary cavity may be made in the plane of a second substrate, different from the first substrate, or may be made in the plane of the first substrate, as already explained above.
  • the first substrate and the second substrate may be assembled through a dielectric layer to form an SOI substrate.
  • a method according to the invention may comprise an assembly of the first substrate with a third substrate.
  • the means for transmitting at least one pressure or vacuum pulse produced in the first cavity to an ambient atmosphere or for communicating the first cavity with an ambient atmosphere can be realized.
  • the excitation means or detection means are made at least partly in the first substrate.
  • the invention makes it possible to produce an original loudspeaker, or digital loudspeaker or cMUT structure, in which the actuator means that generate the pressure pulses (or “speaklet”) no longer move out of the plane of the substrate, but in the plane.
  • This configuration has many advantages, the most important of which are the ability to generate both pressure pulses and depression (case of the speaker), and with similar actuating means to generate pressure or depression , which makes it possible to have the same level of pressure or of depression, or to be able to generate high levels of pressure (case of the cMUTs).
  • Figure 2A is a sectional view along a plane with a trace AA 'in Figure 2B (top view). This structure makes it possible to generate pulses of pressure or depression.
  • a structure according to the invention can be made in 2 or 3 substrates 100, 101, 102 (the case of the Figure 2A is with 3 substrates) superimposed and assembled together, the substrate 100 being disposed between the substrate 101 and the substrate 102.
  • Each of the substrates 100, 102 has a thickness for example between a few microns and a few tens of microns, for example between 1 ⁇ m or 5 ⁇ m and 10 ⁇ m or 50 ⁇ m.
  • the substrate 101 has a thickness for example between a few tens of microns and a few hundred microns, for example between 100 microns or 500 microns and 1000 microns, for example substantially close to 750 microns. These dimensions can be valid for all the devices described below.
  • each of these substrates extends in a plane xy, the z axis being perpendicular to each of them.
  • the thickness of each substrate, measured along this z axis may, in some cases, be small or very small in front of the lateral extensions of the device, that is to say in front of the device dimensions p and 1 measured in the plane xy; p (measured along the x axis) is for example between 100 ⁇ m and 1 mm and 1 (measured along the y axis) is for example of the order of a few hundred micrometers, for example between 100 ⁇ m and 500 ⁇ m. ⁇ m or 1 mm.
  • the substrates may each be a semiconductor material (e.g. Silicon or SiGe).
  • part or bottom side of the device is referred to as the part facing the substrate 101 and part or upper side of the device the part turned on the opposite side, towards the substrate 102.
  • the device first comprises a cavity 20 made in the substrate 100 (or in at least one substrate 100, this substrate may comprise several substrates or superposed layers), having an opening in its upper part.
  • this opening has a plurality of orifices forming a grid, for example to limit the introduction of foreign elements, such as dust, in the cavity 20. It can therefore so additionally provide the filter function.
  • the cavity is closed by a flexible membrane, such as the membrane 281 shown in FIG. Figure 7A .
  • the cavity 20 is delimited by lateral walls 23, 23 1 , 23 2 , some of which (the walls 23, 23 1 , 23 2 ) are fixed and at least one other (here the wall or membrane 25) is mobile or deformable in the plane xy of the device.
  • the cavity 20 has a rectangular shape in the plane of the device, but another form can be made.
  • a structure without the wall 23 'of the Figure 2B , through which the arm 40, can also be carried out within the scope of the present invention.
  • the movable wall or membrane 25 will be displaced or deformed in the xy plane.
  • the ends of the movable wall 25 are fixed to two fixed walls 23 1 , 23 2 , and it is here a deformation of the movable wall that will take place, under the action of actuating means by means of an arm 40 which passes through one of the fixed walls 23 '.
  • the mobile wall may be of the type presented below, in connection with the Figures 4A and 4B it then comprises a main part, rigid, which moves under the action of the pressure, and at least one or two lateral part (s) 253, 255 forming each "spring", connected to the fixed part and deformable.
  • the actuating means 24 are thus fixed or connected or, more generally, associated with this movable wall, these means here having the form of electrostatically excited means, more specifically capacitive combs.
  • capacitive combs are arranged in a particular configuration, which will be explained below, with a displacement of the movable part of the combs along the y-axis and in the direction of extension of the teeth of the comb.
  • other configurations are possible, such as that of the figure 10 , with a direction of extension of the comb teeth along the x axis (and a movement of the comb portion along the y axis).
  • an electrostatic excitation with variation of gap can be realized.
  • An example of this variant is given in figure 11 , where the distribution of the gaps is for example 1 / 3-2 / 3: the difference between two teeth of the comb is d, and at rest, a tooth of a comb is between two teeth of the fixed comb, the distance between one tooth of the moving comb and one of these two teeth of the fixed comb is d 1 (equal to about 1/3 of the distance d) while the distance between the same tooth of the moving comb and the other of these two teeth of the fixed comb is d 2 (equal to about 2/3 of the distance d).
  • the teeth of the comb are in this case perpendicular to the direction of movement of the deformable membrane or the piston.
  • these means may comprise means operating by thermal effect, means of which we will see again examples below.
  • an actuation can be achieved by at least two sets of actuating means, arranged on either side of the cavity, as explained later.
  • the means 24 are activated by a variation of a physical parameter, which will make it possible to induce a variation of the volume of the cavity 20. They can therefore be associated with means 26 which make it possible to induce a variation of this physical parameter, here a voltage variation which results in a variation of capacity and therefore in a relative movement of the two combs. This results in a corresponding displacement or deformation of the wall 25 or the corresponding variation of the volume 20.
  • the cavity 20 and the means 24 are made in the intermediate substrate 100.
  • a device comprises a fixed part, that is to say the position of which does not evolve under the action of the actuating means, and a movable part, whose position evolves or is modified under the action of the actuating means.
  • the moving part is connected to the fixed part.
  • Means for example one or more arms such as the arms 56, 58
  • the elasticity of the movable or deformable wall itself or the end portions 253, 255 of the wall in the case of the Figure 4B
  • the cavity 20 receives the displacements imposed by the actuating means.
  • One side of the membrane or wall 25 is in contact with the "average" ambient pressure, for example atmospheric pressure.
  • the device may comprise at least one lower secondary cavity 28, 28 ', made in the lower substrate 101. This cavity is open under the device.
  • a secondary cavity closed above or below the device can be made, but then preferably sufficiently bulky (its volume can then be at least several times the volume of the cavity 20 for example at least 5 times the volume of the latter, for example 10 times the volume of this cavity 20) to allow the wall or mobile or deformable membrane to move under the effect of the actuating means without excessive damping.
  • one or more secondary cavities 28, 28 ' may be open (or possibly closed) on the side, for example at least one cavity of this type is made in the intermediate substrate 100.
  • Examples of the lateral cavities are illustrated in Figures 2C , 12A-12B .
  • this secondary cavity (or reference cavity) is also referred to as the "back volume". It is located in Figures 2A and 2B , and in most other illustrated embodiments, in a plane or substrate 101 (or 102) different from that of the cavity 20 and the means 24. On the other hand, in the case of Figures 2C , 16A-16B, it is made in the same substrate as that of the main cavity 20.
  • this secondary cavity is offset, in its own plane relative to the cavity 20. In other words, there is no intersection between the projection, in the plane of the substrate 101, of the main cavity 20, and the contour of the secondary cavity 28.
  • deformable cavity 20, and the cavity or cavities 28, 28 'secondary or damping are therefore partially in communication and partially separated at least by the wall or membrane 25, which is itself capable of moving (or deform) in the plane of the substrate under the effect of the actuating means.
  • the device further comprises contact zones 30, 30 ', 32. These contact zones make it possible to connect means 26, 26' to activate the actuating means, and thus to apply an appropriate voltage variation, adapted to induce a depression or a pressure in the cavity 20.
  • actuating means in the form of electrostatic combs
  • a voltage variation by the means 26, 26 ' will induce a movement of the comb.
  • the contacts are arranged on the front face of the device, that is to say that they can be accessed by, or they can be made in, openings formed in the substrate 102. Alternatively, it is also possible to make contacts on the back, as will be seen in examples below.
  • a first comb is connected to the movable wall 25 via an arm 40 which extends substantially along the y axis.
  • the component is used as an actuator and not as a sensor.
  • the supply voltage of the actuator is therefore adapted to prevent excessive displacements of the wall or the membrane 25.
  • stops 43, 43 ' can be provided to limit the displacement of this wall or membrane 25 or to prevent shocks on the device; alternatively one can, to provide the same functions, use the wall 23 'as a stop.
  • the comb 24 has teeth parallel to each other, each tooth extending in the plane zy. These teeth are made in the substrate 100. They are all attached to an arm 42 disposed substantially perpendicular to the plane zy, therefore rather along the axis x and perpendicular to the arm 40. A variant with capacitive actuation with variation of air gap is described later.
  • a fixed part 52 of the device also in the form of an arm substantially parallel to the arm 42, is also attached or connected a comb 24 'which also has a row of teeth parallel to each other, each also arranged in a plane zy direction. These teeth of the fixed part are also made in the substrate 100.
  • the teeth of the two rows of teeth of the combs 24, 24 ' are alternated, in that a portion of each tooth (except possibly the teeth located at the end of a row of teeth) of the comb 24 is arranged between two teeth close to the comb 24. And part of each tooth (except possibly the teeth located at the end of the row of teeth) of the comb 24 'is disposed between two adjacent teeth of the comb 24.
  • Each tooth may have a thickness, measured along the x axis, of between 2 ⁇ m or 5 ⁇ m and 10 ⁇ m or 100 ⁇ m. Two adjacent teeth of the same comb are separated by a distance that may be between 0.5 microns or 1 micron and 3 microns or 10 microns.
  • the teeth of the 2 combs are electrically conductive.
  • a variation of the voltage V causes the teeth of the moving comb 24 to move relative to the teeth of the fixed comb 24 ', for example in the direction indicated by the arrow in FIG. Figure 2B , thus a displacement of the arm 40, which causes a displacement or a deformation of the wall 25.
  • the arm 42 is in fact one of the sides of a frame comprising three other arms or sides 44, 46, 48 which surround the walls 23, 23 1 , 23 2 , 25 delimiting the cavity 20.
  • C ' is therefore the whole of this frame which is driven in movement when the mobile comb 24 moves to move due to a voltage variation V.
  • the side or the arm 48, opposite the arm 42 can also be connected by an arm 40 ', directed along the y axis, to a mobile comb 24 1 , which can also be driven in displacement, for example in the opposite direction to that of the arm 40, during a voltage variation V 'to enable it.
  • the comb 24 1 is also made in the substrate 100. Its teeth are all attached to an arm 42 ', disposed substantially perpendicular to the plane zy, therefore rather along the axis x and perpendicular to the arm 40'.
  • this comb 24 1 is associated a fixed comb 24 ' 1 , whose teeth are fixed to a fixed part 52' of the device and with which it cooperates in the same way that the mobile comb 24 cooperates with the fixed comb 24 ' .
  • the relative, alternating arrangement of the teeth of these two combs 24 1 , 24 ' 1 is similar or identical to what has already been described above for the two combs 24, 24'.
  • the fixed part 52 ' is also formed in the form of an arm substantially parallel to the arm 42'. At this fixed part 52 'are fixed or connected the teeth of the comb 24', arranged in the form of a row of teeth parallel to each other, each also arranged in a zy direction plane.
  • the arm 52 'and the teeth of the fixed comb 24' 1 are also made in the substrate 100.
  • Each tooth of each comb 24 1 , 24 ' 1 may have a thickness, measured along the x axis, of between 2 ⁇ m or 5 ⁇ m and 10 ⁇ m or 100 ⁇ m. Two adjacent teeth of the same comb are separated by a distance that may be between 0.5 microns or 1 micron and 3 microns or 10 microns.
  • the teeth of the two combs 24 1 , 24 ' 1 are electrically conductive.
  • a variation of the voltage V ' causes the teeth of the moving comb 24 1 to move relative to the teeth of the fixed comb 24' 1 , for example in the direction indicated by the arrow in FIG. Figure 2B , thus a displacement of the arm 40 ', resulting, by means of the arms 40, 42, 44, 46, 48, 40', a displacement or a deformation of the wall 25.
  • This device may also comprise means 56, 58 for guiding, in the xy plane in which the membrane moves the mobile or deformable wall and the detection means.
  • These means here have the shape of at least one arm 56, 58, for example two arms, each disposed substantially in the x direction, in the xz plane, but with a width (which can be between 1 ⁇ m and 10 ⁇ m). ), in the direction y, sufficiently small to allow each of these arms to have, in the same direction x, sufficient flexibility during a movement that results from a displacement of the wall 25.
  • the arm 56 can be arranged, as illustrated in Figure 2A between the side 48 of the mobile frame formed around the cavity 20, and the arm 42 'of the second mobile comb 24 1 . Being mechanically connected to the fixed part of the device it makes it possible to guide the displacement of the mobile part in the plane of the substrate 100 and to bring this moving part back to its starting position after return of the activation means to their initial state, before excitation.
  • a second arm 58 which may be symmetrical with the arm 56 relative to an axis parallel to the y axis, and also connected to a fixed part 34 of the device, also allows this guiding function of the moving part to be provided. .
  • the arm 58 may have the same geometric and elastic characteristics as the arm 56.
  • means are used to apply to the mobile part of the device the appropriate voltage to allow each of the electrostatic combs to play its role.
  • These means for applying a voltage can use, or be combined with, at least one of the arms 56, 58.
  • the arm 56 is itself connected, mechanically and electrically, to one of the contact pads 32 to which the desired voltage can be applied. Studs 30, 30 'are also provided in other fixed parts of the device, for example in parts 52, 52'.
  • one of the moving combs may be used to induce a pressure pulse in the cavity 20 while the other mobile comb may be used to induce a depression pulse in the same cavity 20.
  • one and / or the other of the supply voltages V, V ' one and / or the other of the actuators generates a force in the plane of the substrate. The resulting force pushes or pulls the membrane 25. The displacement of this membrane generates a pressure pulse (or depression) in the upper cavity 20 which is evacuated via the upper vent 21.
  • the comb means, the arms 42, 44, 46, 48 forming the frame around the walls of the cavity 20, the arms 40, 40 ', are formed in the same substrate 100.
  • the example described above may also include only one comb system.
  • the wall 25 is replaced by a wall 250 which is non-deformable but can be displaced in translation along the axis y.
  • This wall may further comprise an advance 251 forming a piston cooperating with the fixed walls 23, 23 1 , 23 2 to generate the desired pressure variation. More precisely, this advance 251 can penetrate the volume 20, thus generating a compression of the atmosphere present in the latter.
  • the contacts are, again, on the top, on or in the substrate 102.
  • the actuating means are the same as in the previous example.
  • the device therefore works in the same way as has already been described above.
  • Actuation of the second comb system also acts on the movable frame via side 48 and sides 44, 46, and thus on wall 250 and piston 251.
  • This embodiment can also work with a single system combs.
  • FIG. 4A is a sectional view along a plane with a trace A 1 A ' 1 in Figure 4B (top view).
  • a difference compared to the example of Figures 2A - 2B resides in the contacts 30 1 , 30 ' 1 , 32 1 which are here on the rear face, that is to say on or in the substrate 101. Another difference lies in the structure of the wall 25.
  • the structure of the wall 25 is of the type comprising a rigid central portion framed by two parts 253, 255 forming "spring", and which are deformable. Under the action of the actuating means, the rigid portion moves, the parts 253, 255 being deformed. These parts also return the rigid portion to the initial position when the actuating means return to their initial state after excitation. These portions 253, 255 form spring connections at the ends of the rigid part. Here we have a so-called “piston" effect or movement of the moving part. However, one could also use, in the present embodiment, the deformable membrane or wall form which has been presented above in connection with the previous figures.
  • the actuating means are the same as in the previous example.
  • Arms of the guide 56, 58 are arranged here in the movable frame provides which guide the movement of the assembly constituted by the movable wall, the frame and the combs, as well as the arms 56 and 58 of the Figure 2B . Putting them inside the frame allows to gain in compactness. This variant is permitted here because of the recovery of the electrical contacts on the rear face (in particular the contact 32 1 ). This was not the case Figures 2A - 2C .
  • a fourth example uses a capacitive excitation applied to two deformable membranes 25, 25 '.
  • the structure of the cavity 20 is different from that which has been presented above, since it comprises two movable or deformable walls 25, 25 ', both arranged so as to move or deform along the y axis.
  • each of the movable walls 25, 25 ' are fixed to two fixed walls 23 1 , 23 2 parallel to each other and it is therefore a deformation of the moving walls that will take place.
  • Each of these movable walls is of a thickness, measured along the y axis, sufficiently small to present the desired sensitivity to the movements induced by the actuating means in the plane of the device.
  • the cavity thus comprises a fixed wall 23 "parallel to the wall 23 'and perpendicular to the walls 23 1 , 23 2 , this wall 23" being also pierced with an orifice allowing the passage of an arm 40' connecting the second wall mobile 25 and at least a second set of combs 24 1 , 24 ' 1 , one of which is movable and the other fixed.
  • a device without the walls 23 ', 23 "is generally feasible within the scope of the invention, the cavity being in fact closed by the walls 23, 25' and the fixed walls 23 1 , 23 2 .Thus, the two arms 40 , 40 'move along the same axis y, depending on the voltages applied to their respective comb sets.
  • Such a device can also be made and operate with only one of the two sets of combs 24, 24 'or 24 1 , 24' 1 (and a single deformable wall) but less effectively than with the two sets of combs 24, 24 ' and 24 1 , 24 ' 1 of the figure 5 .
  • the device further comprises two sets of additional combs, each having displacements along the x axis.
  • Each comprises, as the comb assemblies already described above, a fixed comb 24'a, 24 1a and a movable comb 24 '1 a, 24a, the teeth of the one alternating with the teeth of the other.
  • Each comb fixed and connected to a fixed part 52a, 52'a of the device, comprising means 30a, 30'a forming connection means for voltage supply means 26a, 26'a.
  • Such a device may also be realized and operated with only one of the two additional sets of combs 24a, 24'a or 24 1a, 24 'has 1 but less effectively than the two additional sets of combs 24a, 24'a or 24 1a , 24 ' 1a of the figure 5 .
  • Each of these two additional sets of combs is arranged so that its teeth are aligned in the plane zx, and that a movement of the moving comb takes place along the x axis.
  • the two sets of additional combs can therefore be obtained by rotating 90 ° around the z-axis of the two sets of combs 24, 24 ', 24 1 , 24' 1 .
  • the device also comprises a connection pad 32 linked to its fixed part, here in the vicinity of the fixed walls 23 which delimit the cavity 20.
  • Specific coupling means 41a, 41b, 41c, 41d are further provided for connecting the two additional comb sets and the movable walls 25, 25 '.
  • each additional mobile comb 24a, 24 '1a is provided a set of two arms, the arms 41a, 41b to the movable comb 24a and 41c arm 41d to the movable comb 24' 1a.
  • the four transmission arms 41a, 41b, 41c, 41d are oriented obliquely with respect to the x and y axes (for example at 45 ° with respect to these axes), and connect the points C and C ' , respectively located at the edges of the arms 42, 42 ', at the points D and D' respectively located at the edge of the arms 4a2, 42'a.
  • a voltage tending to create a pressure pulse is applied in the cavity 20, whereas a voltage tending to apply an impulse is applied to the means 26, 26 '. depression in the cavity 20.
  • both the cavity 20, its walls, and the actuating means, here comprising a set of four pairs of combs, are made in the intermediate substrate 100.
  • a fifth embodiment, illustrated in figure 6 in top view, includes means for performing a thermal excitation (by bimorph or asymmetric effect) applied to a deformable membrane.
  • These means are for example thermal or piezoelectric actuator type.
  • the structure of these means and their mode of operation is described, for example, in the article "Time and frequency response of two-armed micromachined thermal actuators" (R Hickey et al., 2003 J. Micromech. Microeng. 13-40 ". Information on the operation of the bimorph actuator is available at: http://www.pi-france.fr/PI%20Universite/Page20%20.htm.
  • a constraint in the plane in one of the layers of a multi-layer stack induces a displacement of this stack in the direction perpendicular to the plane of the layers.
  • FIG. 7A side view, side view
  • 7B top view
  • It comprises means for electrostatic actuation, of flat piston type, on several cavities 20, 20 ', 20 ", 20'” in parallel (in particular for cMUT).
  • These cavities, or their corresponding openings 21, can be closed by a flexible membrane 281, which makes it possible, for example, to prevent the entry of dust or moisture into the device in the case of a loudspeaker type operation.
  • this membrane also makes it possible to seal the device under vacuum (a cMUT working on resonance).
  • this membrane 281 can also be disposed on the other side of the substrate 102 as illustrated by the membrane 281 'in dashed lines of the Figure 7A .
  • This closure system of the cavity 21 can also be implemented in the context of the preceding embodiments.
  • This device further comprises two cavities 280, 280 ', each forming a "back volume”, closed and placed on the top of the component, in the substrate 102.
  • These two aspects, flexible membrane closing one or more cavities or corresponding openings 21 and "Back volume” cavity, closed and placed on the top of the component, can be applied to the other embodiments of the present invention.
  • the interdigitated combs serve both for the generation of ultrasound waves (transmission operation, as described previously), but also for the detection of reflected ultrasonic waves ( receiving operation) for analysis.
  • the resonant frequency of the structure is about a few MHz, for example between 1 MHz and 10 MHz.
  • cavities 20, 280 are sealed under vacuum (via membrane 281)
  • FIG 10 another embodiment is shown, in which the activation means, again of the capacitive type, are produced by a system of combs, whose teeth are, this time, directed along the x axis, not according to the y-axis as in Figures 2A - 2B .
  • An arm 40 substantially perpendicular to the wall 25, supports the teeth of the moving part of the comb 27, two fixed parts 27 ', 27 "of the comb being arranged, with respect to each row of teeth, as already explained above. liaison with the Figure 2B .
  • the fixed parts are split, with fixed parts 27 ', 27 "and 27' 1 , 27" 1 , intended for to receive voltages V 1 and V 2 different from each other.
  • the guide arms 56, 58 may be provided, for example between the means to which a voltage V 1 may be applied and those to which a voltage V 2 may be applied.
  • the fact of being able to apply two different voltages will make it possible to actuate, with one of them, the membrane in one direction, for example to the right, in compression of the cavity 20, and to actuate, with the another voltage, the membrane in another direction, for example to the left, in depression of the cavity 20.
  • dissymmetrical differences are made, at rest, between each moving electrode and the fixed electrodes which surround it.
  • the difference between a moving electrode 240 'and the first fixed electrode 240 1 next, (respectively the first fixed electrode 240 2 neighbor) is of the order of 1/3 (respectively 2/3) of the distance between these two neighboring electrodes.
  • the Figures 8A-8G illustrate an example of a method for producing a device according to the invention.
  • the contacts are on the front face and the cavity 28 is on the rear face.
  • FIG 8A We leave ( figure 8A ) of a SOI substrate (with a buried oxide (BOX) 103, for example of thickness 0.5 ⁇ m).
  • a SOI substrate with a buried oxide (BOX) 103, for example of thickness 0.5 ⁇ m.
  • BOX buried oxide
  • it starts from a standard substrate 101, on which a deposit 103 of a sacrificial layer (oxide) and a deposit 100 of semiconductor material are produced, for example silicon or polycrystalline SiGe.
  • a deposit of metal (them: Ti / Au or AISi, ...) is made, as well as a lithography and an etching of the contacts 30, 30 '.
  • the contacts on the rear face can be made by the same technique.
  • a deposition 104 of silicon oxide (SiO 2) of thickness approximately 0.8 ⁇ m ( Figure 8C ).
  • a lithography and etching (partial or complete) of the oxide 104 and the silicon 102 are then carried out in order to form openings 106, 106 ', 106 "for the entry of the pressure and the opening of the contacts.
  • the 2 substrates are then aligned ( figure 8D ) and sealed (by direct sealing, or eutectic, or polymer, or anodic, ).
  • a standard substrate 300 for example semiconductor material such as silicon.
  • a sacrificial layer 301 is deposited ( Figure 9B ), an oxide layer for example, which again in one example may be about 0.5 ⁇ m thick.
  • an active layer 302 of Si-poly or SiGe-Poly ( Figure 9C ) whose thickness may be, for example, about 10 microns.
  • the sacrificial layers 103, 104 are for example between a few tens of nm and a few microns, for example between 100 nm or 500 nm and 1 ⁇ m or 2 ⁇ m.
  • the active layers 100, 101, 102 (each is for example Si, or SiGe, ...) are between a few ⁇ m and a few tens of ⁇ m, or even a few hundred ⁇ m, for example between 5 ⁇ m and 10 ⁇ m, or 50 ⁇ m or 200 ⁇ m.
  • the invention applies to the production of pressure pulse generators for digital loudspeakers, especially for consumer applications (mobile telephones, games, MP3 players, television sets, etc.).
  • ultrasonic pulse generators for cMUT, especially for medical or industrial applications (ultrasonic probe, ultrasound, non-destructive testing, ).

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  • Engineering & Computer Science (AREA)
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  • Acoustics & Sound (AREA)
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  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Micromachines (AREA)
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  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)

Claims (15)

  1. Vorrichtung zur Erzeugung akustischer Energie vom Typ MEMS und/oder NEMS oder cMUT, wobei die Vorrichtung Folgendes aufweist:
    - mindestens einen ersten verformbaren Hohlraum (20, 20', 20", 20"'), welcher in zumindest einer sich in einer Ebene xy, der sogenannten Vorrichtungsebene, erstreckenden ersten Schicht oder einem zumindest ersten Substrat (100) realisiert ist, und welcher von mindestens einer beweglichen oder verformbaren Seitenwand (25, 25', 25", 25"') begrenzt ist, sowie Mittel (21) zur Übertragung zumindest eines in dem ersten Hohlraum erzeugten Druckimpulses oder Unterdruckimpulses an eine Umgebungsatmosphäre;
    - Mittel (24, 24', 241, 24'1, 24a, 24'a, 241a, 24'1a, 66, 66'), um eine Verlagerung oder eine Verformung der beweglichen oder verformbaren Seitenwand in der Vorrichtungsebene in Gang zu setzen.
  2. Vorrichtung nach Anspruch 1, welche darüber hinaus einen sekundären Hohlraum, oder Pufferhohlraum (28, 28', 28") aufweist, welcher teilweise in Verbindung mit dem ersten Hohlraum ist, wobei zumindest ein sekundärer Hohlraum insbesondere in der Ebene eines zweiten Substrats (101, 102), welches sich in einer Ebene parallel zur Vorrichtungsebene erstreckt und sich von dem ersten Substrat unterscheidet, realisiert sein kann, oder wobei er in der Ebene des ersten Substrats realisiert ist.
  3. Vorrichtung nach Anspruch 2, wobei der sekundäre Hohlraum in der Ebene eines zweiten Substrats (101, 102) realisiert ist, welches sich in einer Ebene parallel zur Vorrichtungsebene erstreckt und sich von dem ersten Substrat unterscheidet:
    - wobei das zweite Substrat (102) darüber hinaus Mittel (21) aufweist, um den ersten Hohlraum mit einer Umgebungsatmosphäre in Verbindung zu bringen;
    - oder wobei das zweite Substrat (101) an einer Seite des ersten Substrats parallel zur Vorrichtungsebene angeordnet ist, und ein drittes Substrat (102) an einer anderen Seite des ersten Substrats parallel zur Vorrichtungsebene angeordnet ist, wobei dieses dritte Substrat Mittel (21) aufweist, um zumindest einen in dem ersten Hohlraum erzeugten Druckimpuls oder Unterdruckimpuls an eine Umgebungsatmosphäre übertragen zu lassen.
  4. Vorrichtung nach einem der Ansprüche 1 bis 3, wobei die Betätigungsmittel Folgendes umfassen:
    Mittel vom kapazitiven Typ, welche beispielsweise zumindest eine erste Einheit von elektrostatischen Kämmen aufweisen, welche selbst einen in der Sensorebene mobilen ersten Kamm sowie einen zweiten fixierten Kamm aufweist, wobei sich die Zacken bzw. Zähne des ersten Kamms und die des zweiten Kamms abwechseln, und Mittel (26, 26', 30, 30', 32) zur Anlegung einerAktivierungsspannung, um den mobilen Kamm in Bezug auf den fixierten Kamm zu verlagern bzw. zu bewegen;
    - oder Mittel vom Typ der thermischen Anregung, beispielsweise durch bimorphe oder asymmetrische Einwirkung.
  5. Vorrichtung nach einem der Ansprüche 1 bis 4, welche erste Aktivierungsmittel (24, 24') sowie zweite Aktivierungsmittel (241, 24'1) aufweist, welche auf beiden Seiten des ersten verformbaren Hohlraums in der Ebene des ersten Substrats (100) angeordnet sind, und welche die Betätigung der beweglichen oder verformbaren Wand in zwei entgegengesetzte Richtungen erlauben.
  6. Vorrichtung nach einem der Ansprüche 1 bis 5, wobei die Mittel (24, 24', 241, 24'1, 24a, 24'a, 241a, 24'1a) zur Ingangsetzung einer Verlagerung oder Verformung der beweglichen oder verformbaren Wand Folgendes umfassen:
    - Mittel (24, 24', 241, 24'1) zur Erzeugung zumindest einer ersten Kraft in eine zu dieser Wand im Wesentlichen senkrechten ersten Richtung;
    - Mittel (24a, 24'a, 241a, 24'1a) zur Erzeugung zumindest einer zweiten Kraft in eine zur ersten Richtung im Wesentlichen senkrechten zweiten Richtung;
    - und Mittel (41 a, 41 b, 41 c, 41 d) zur Umwandlung dieser zweiten Kraft in eine Kraft in die erste Richtung.
  7. Vorrichtung nach Anspruch 4, welche des Weiteren Folgendes aufweist:
    - eine zweite Einheit von kapazitiven Kämmen, wobei die erste Einheit von kapazitiven Kämmen und die zweite Einheit von kapazitiven Kämmen auf beiden Seiten des verformbaren Hohlraums in der Ebene des ersten Substrats (100) angeordnet sind, und wobei jede Einheit einen beweglichen Kamm in eine erste Richtung aufweist;
    - und zumindest eine dritte Einheit von kapazitiven Kämmen, welche ebenfalls in der Ebene des ersten Substrats (100) angeordnet ist, wobei ein beweglicher Kamm in eine Richtung senkrecht zur ersten Richtung beweglich ist.
  8. Vorrichtung nach einem der Ansprüche 1 bis 7, welche mehrere parallel zueinander angeordnete erste verformbare Hohlräume (20, 20', 20", 20"') aufweist, wobei zumindest zwei dieser Hohlräume gemeinsame Betätigungs- bzw. Aktivierungsmittel aufweisen.
  9. Vorrichtung nach einem der Ansprüche 1 bis 8, wobei die Mittel (21) zur Übertragung zumindest eines in dem ersten Hohlraum erzeugten Druckimpulses oder Unterdruckimpulses an eine Umgebungsatmosphäre eine alleinige Öffnung (21) aufweisen, welche gegenüber jedem verformbaren Hohlraum (20, 20', 20", 20"') angeordnet ist, oder eine Membran (281), welche über oder gegenüber diesem verformbaren Hohlraum angeordnet ist.
  10. Vorrichtung nach einem der vorhergehenden Ansprüche, wobei zumindest eine bewegliche oder verformbare Wand zwei seitliche Enden aufweist, und wobei:
    - die Wand an ihren beiden seitlichen Enden eingebaut oder befestigt ist;
    - oder die Wand steif ist und an ihren beiden seitlichen Enden durch verformbare Elemente (253, 255) gehalten wird;
    - oder die Wand steif und verfahrbar ist.
  11. Verfahren zur Herstellung einer MEMS- und/oder NEMS- oder cMUT-Vorrichtung für die Erzeugung akustischer Energie, welches die folgenden Schritte in dieser Reihenfolge oder einer anderen Reihenfolge aufweist:
    - die Realisierung in zumindest einer ersten Schicht oder in zumindest einem ersten Substrat (100), welche(s) sich in einer Ebene xy, der sogenannten Vorrichtungsebene erstreckt, zumindest eines ersten verformbaren Hohlraums (20, 20', 20", 20"') zum Erhalt einer Umgebungsatmospähre, wobei der Hohlraum durch zumindest eine seitliche bewegliche oder verformbare Wand (25, 25', 25", 25"') begrenzt ist;
    - die Realisierung von Mitteln (24, 24', 241, 24'1, 24a, 24'a, 241a, 24'1a, 66, 66'), zur Aktivierung einer Verlagerung oder einer Verformung dieser beweglichen oder verformbaren Seitenwand in der Vorrichtungsebene;
    - die Realisierung von Mitteln (21), um den Hohlraum mit einer Umgebungsatmosphäre in Verbindung zu bringen.
  12. Verfahren nach Anspruch 11, welches des Weiteren den Schritt der Realisierung zumindest eines sekundären Hohlraums (28, 28', 28") oder Pufferhohlraums aufweist, welcher teilweise in Verbindung mit dem ersten Hohlraum ist, wobei zumindest ein sekundärer Hohlraum in der Ebene eines zweiten Substrats (101, 102), welches sich in einer Ebene parallel zur Vorrichtungsebene erstreckt und sich von dem ersten Substrat unterscheidet, realisiert sein kann, oder wobei er in der Ebene des ersten Substrats realisiert ist.
  13. Verfahren nach Anspruch 12, wobei das erste Substrat und das zweite Substrat mittels einer dielektrischen Schicht (103) zusammengefügt sind, um ein Substrat vom Typ SOI zu bilden.
  14. Verfahren nach Anspruch 13, welches einen Verbund des ersten Substrats mit einem dritten Substrat aufweist, welches sich in einer Ebene parallel zur Vorrichtungsebene zur Bildung der Mittel (21) erstreckt, um den ersten Hohlraum mit einer Umgebungsatmosphäre in Verbindung zu bringen.
  15. Verfahren nach einem der Ansprüche 1 bis 14, wobei die Mittel 24, 24', 241, 24'1, 24a, 24'a, 241a, 24'1a, 66, 66') zur Aktivierung einer Verlagerung oder einer Verformung der beweglichen oder verformbaren Seitenwand zumindest teilweise in dem ersten Substrat realisiert sind.
EP11174599.8A 2010-07-22 2011-07-20 Akustischer Druckimpuls-Generator vom Typ MEMS Not-in-force EP2410768B1 (de)

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FR2963192B1 (fr) 2013-07-19
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US20120018244A1 (en) 2012-01-26
FR2963192A1 (fr) 2012-01-27
EP2410768A1 (de) 2012-01-25

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